Abstract

We have developed the a-Si/a-SiGe/μc-Si triple-junction p-i-n and n-i-p solar cells with around 13% initial conversion efficiency by incorporating device-quality intrinsic hydrogenated microcrystalline silicon (μc-Si:H) thin films under a high deposition rate of above 1.5nm/s.

© 2013 OSA

PDF Article