Abstract
We demonstrate Si3N4 photonic integrated circuits featuring ultra-low propagation loss and tight optical confinement, fabricated with a subtractive process. We report an increase in propagation loss in Si3N4 waveguides after exposure to ultraviolet (UV) irradiation, and loss recovery following a rapid thermal anneal (RTA). We show an intrinsic quality factor as high as 20×106 at 1.55 µm across a 100 mm wafer.
© 2023 The Author(s)
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