Abstract
We report the fabrication details of a monolithically integrated
electro-absorption modulated distributed feedback laser (EML) based on the
ion-implantation induced quantum well intermixing (QWI) technique. To well-preserve
material quality in the laser region, thermal-oxide SiO2 is deposited before
implantation and the ion-implantation buffer layer is etched before annealing. Thirteen
pairs quantum well and barrier are employed to compensate deterioration of the
modulator’s extinction ratio (ER) caused by the QWI process. The fabricated EML exhibits
an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation bandwidth of
modulator is over 13.5 GHz indicating that this EML is a suitable light source for over
16 Gb/s optical transmission links.
© 2015 Chinese Laser Press
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