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High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films: erratum

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Abstract

We present an erratum to our paper [Opt. Express 2631617 (2018) [CrossRef]  ]. Due to the statistical requirements of the postdoctoral outbound assessment, the first organization of the research articles must be “Nanjing University”. As all our experimental data in this article is done in the laboratory of Nanjing University, so “Nanjing University” should be used as the first organization to meet the appraisal requirements of the postdoctoral workstation.

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Thus, in our paper [1], here we change the organization named “2Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China” in the original article as the first organization as follows:

1Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

2College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing, 211169, China,”

and the rest part of the published article keeps the same.

The authors would like to apologize for any inconvenience caused.

Funding

National Science Foundation for Post-doctoral Scientists of China (No. 2017M621711); National Outstanding Youth Science Fund Project of National Natural Science Foundation of China (No. 11704165).

References

1. P. Zhang, L. Zhang, Y. Wu, S. Wang, and X. Ge, “High photoluminescence quantum yields generated from N-Si-O bonding states in amorphous silicon oxynitride films,” Opt. Express 26, 31617 (2018). [CrossRef]  

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