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High Speed InP Modulator for Beyond 200 Gbaud

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Abstract

We developed a next-generation InP twin-IQ modulator PIC for beyond 200-Gbaud operations. A 3-dB electro-optic bandwidth of the modulator exceeds 100 GHz while maintaining a half-wave voltage of 1.5 V and total on-chip optical insertion loss of less than 3.5 dB.

© 2024 The Author(s)

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