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Conferences > OFC > 2024 > Th3H > Th3H.5

Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

Zihan Li, Zheru Qiu, Rui Ning Wang, Xinru Ji, Marta Divall, Anat Siddharth, and Tobias J. Kippenberg

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Abstract

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO2) films deposited using S iCl4 and O 2 as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300 ◦C, essential for next generation photonic integrated circuits.

© 2024 The Author(s)

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