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Conferences > CLEO_SI > 2019 > SM2O > SM2O.6

High Quality Factor PECVD Si3N4 Ring Resonators Compatible with CMOS Process

Xingchen Ji, Samantha P. Roberts, and Michal Lipson

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Abstract

We demonstrate high-confinement Si3N4 resonators with intrinsic quality factor more than 1 million using standard PECVD process. We show that by addressing scattering, the loss at 1.6 μm can be as low as 0.4 dB/cm.

© 2019 The Author(s)

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