Abstract

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.

© 2012 OSA

1. Introduction

The advantages of optically pumped semiconductor disk lasers (SDLs) include their capability of producing multi-Watt output powers with excellent beam quality [1]. The external cavity of SDLs allows various optical components to be conveniently integrated into the cavity, and for power scaling by increasing the mode area on the gain element or by using multiple gain elements. However, the most prominent feature of SDLs is their spectral versatility as the range of accessible wavelengths for semiconductor technology spans from the ultraviolet to 5 μm [2-3].

Significant progress has been achieved in recent years in SDL technology based on InGaAs quantum wells (QWs) emitting at wavelengths 920-1180 nm. High infrared (IR) power obtained in continuous wave regime [46] has been efficiently converted into blue, green and yellow wavelengths by intracavity frequency doubling [4, 710]. Further extension of the SDL spectral coverage to the 600-900 nm and the 1200-1600 nm spectral ranges requires special efforts and different approaches. One way to extend the operation wavelength of SDLs is to use in-well pumping instead of the traditional barrier pumping. For emission wavelengths in the range 830-870 nm, this scheme can utilize the inexpensive and powerful pump sources emitting around 800 nm and has enabled up to 1 W of output power from a GaAs/AlGaAs SDL [11,12]. In-well pumping has also been proposed as a solution to cover the 700-820 nm spectral band [13]. This approach, however, suffers from the low power and the high cost of the available pump diodes emitting around 670 nm. Using frequency-doubled solid-state systems, e.g. Nd:YVO4 based lasers, for pumping SDLs emitting below 800 nm is another option. Although this approach is unlikely to be a practical solution, output powers of 1 W at 675 nm from a GaInP QW SDL [14] and 52 mW at 716-755 nm from an InP quantum-dot (QD) system have been reported [15].

Contrary to the SDLs emitting at 600-830 nm, various sources are readily available for pumping SDLs operating at 920-1600 nm. Though the state-of-the-art pumping technology has contributed significantly to the rapid progress of high power InGaAs QW SDLs, extending the emission wavelength of InGaAs structures beyond 1180 nm is limited by the increased lattice mismatch between GaAs and InGaAs. The operation wavelength can be shifted beyond 1180 nm by adding nitrogen into the InGaAs QWs as demonstrated in [16], but this approach requires higher accuracy in the growth conditions and suffers from enhanced non-radiative processes with increasing nitrogen content needed to tailor the operating wavelength to longer wavelengths [17, 18]. Although the dilute nitride GaInNAs structures have produced 11 W at 1180 nm [19], the reported output power drops down to 600 mW at 1320 nm [20]. Alternatively, quantum dot (QD) nitrogen-free structures have been employed to produce radiation at wavelengths above 1180 nm [21] and orange emission through frequency doubling [22]. The QD structures, however, suffer from lower gain as compared to the QW structures and the prospect for their exploitation to achieve lasing beyond 1300 nm is still unclear.

InP-based QWs are ideal for semiconductor lasers operating at the 1200-1600 nm spectral band [23]. Monolithic InP-based lasers with vertical cavity, however, suffer from low refractive index contrast and poor thermal conductivity of the compounds lattice-matched to InP [24], requiring thick distributed Bragg reflectors (DBRs) with reduced performance [25, 26]. This problem can be overcome by wafer fusion [27], which allows the integration of InP-based QWs and high quality GaAs/AlGaAs DBRs. Particularly, the high power wafer-fused SDLs operating at 1200-1600 nm [2831] have enabled 3 W of output power at 650 nm by frequency doubling [32].

We have previously reported 2.6 W of output power from a wafer-fused SDL operating at 1580 nm [31]. In this Letter, we scale this power up to 4.6 W which allows 1 W of frequency-doubled output power at 785 nm to be obtained. SDLs operating at the 700-800 nm wavelength range could provide an alternative to the expensive and bulky Ti:sapphire laser when broad wavelength tunability is not required [33]. The SDL concept also allows for enhanced power scaling with diffraction limited beam quality as compared to laser diodes [34]. In all, intracavity frequency doubling of SDLs emitting at 1400-1600 nm allows to cover the 700-800 nm spectral range and represents a practical scheme since it uses powerful and inexpensive 980 nm pump diodes.

2. Wafer-fused SDL emitting at 1580 nm

The active medium of the SDL discussed here was grown on an InP substrate by low pressure metalorganic vapor phase epitaxy (LP MOVPE). The 5 pairs of compressively strained (1%) AlGaInAs QWs were positioned at the antinodes of the optical field. The measured photoluminescence peak is centered near 1520 nm at room temperature. The DBR grown by solid-source molecular beam epitaxy (SS MBE) on a GaAs substrate consists of 35 pairs of quarter wave thick Al0.9Ga0.1As and GaAs layers. The wafers were then processed using the 2-inch wafer fusion technique described in [35]. After the fusion, the InP substrate was removed by wet-etching using HCl. The GaInAsP etch-stop was removed using H3PO4:H2O2:H2O (3:1:3). The structure then was cut into pieces of 2.5 x 2.5 mm2. The thermal management of the structure was achieved by capillary bonding a 300 μm thick transparent diamond on top of the gain section using de-ionized water [36]. The assembly was then placed between water-cooled copper blocks using thin indium foil to ensure good mechanical and thermal contact. Finally, an antireflection (AR) coating at the signal wavelength was deposited on the diamond surface. The role of the antireflection coating is to preserve good beam quality while the spectral fringes cannot be avoided completely.

The optical pumping was performed with a 980 nm fiber-coupled diode laser that was focused onto a spot with a diameter of 300 μm at the gain element. The cavity geometry ensured that the size of the laser mode matched closely to the pumped spot. A schematic of the cavity is given in Fig. 1 . The output power characteristics with the corresponding spectra are shown in Fig. 2 . The maximum output powers of 4.2 W and 4.6 W were obtained at gain element temperatures of 15 °C and 8°C, respectively. The output power was limited by thermal roll-over. The beam quality parameter M2 was measured to be below 1.25 in both transverse directions at all pump powers. The multiline spectra shown in the inset of Fig. 2 originate from the Fabry-Pérot etalon effect induced by the intracavity diamond heat spreader.

 

Fig. 1 Cavity schematic of the wafer-fused SDL producing 4.6 W of output power at 1580 nm. The output coupling ratio is close to 1.5%.

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Fig. 2 Output power as function of pump power for two gain element temperatures. The laser spectra and the output beam taken at the highest output power are shown in the insets.

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Compared to our previous report [31], two key cavity parameters responsible for power scaling were thoroughly optimized to achieve the observed increase in the output power. First, the pump spot and the cavity mode diameter on the gain element were increased from 180 μm to 300 μm, which resulted in reduced temperature rise in the gain element at a given pump power. Second, since the laser efficiency critically depends on the output coupling ratio, a precise setting of the output coupling ratio is crucial for the laser optimization. A tunable output coupler was employed for accurate adjustment of the output coupling ratio. The transmission of the output mirror could be changed by moving the mode location across the mirror surface. With an optimal value of the output coupling ratio, a notable increase in output power was achieved.

3. Generation of 785 nm radiation by frequency conversion

The schematic of the cavity comprising the nonlinear crystal for frequency doubling is shown in Fig. 3 . The second harmonic output at 785 nm is obtained through mirror 2 (M2), which is transparent for the frequency-doubled radiation. Mirror 3 (M3) is highly reflective for both fundamental and second harmonic wavelengths. The nonlinear crystal is a critically phase-matched, Type I, 6 mm long lithium triborate (LBO) crystal that was AR coated for the signal and the second harmonic wavelengths. The temperature of the LBO crystal was fixed to 25 °C by mounting it into a Peltier cooler in order to preserve the phase matching condition in the LBO crystal [37, 38]. The 785 nm output power as a function of 980 nm pump power and the corresponding spectra are shown in Fig. 4 . The output power reaches 1 W at 42 W of pump power and is limited by thermal roll-over. The beam quality parameter M2 was measured to be below 1.45 in both transversal directions at all pump powers, allowing a 70% coupling efficiency into a single mode fiber.

 

Fig. 3 Cavity schematic of the frequency-doubled SDL producing 1 W of output power at 785 nm. The mode diameter in the 6 mm long LBO crystal was estimated to be 140 μm.

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Fig. 4 Frequency-doubled output power as a function of pump power. The temperature of the gain element was kept at 15°C. The laser spectra and the output beam taken at the highest output power are shown in the insets.

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The output power characteristic for the frequency-doubled radiation, shown Fig. 4, is typical for lasers for which the conversion efficiency is relatively low and the fundamental intracavity power increases approximately linearly with pump power [3941]. One factor responsible for the relatively low conversion efficiency could be a limited phase matching bandwidth of the LBO crystal. It should be noted, however, that the acceptance bandwidth of the LBO crystal is ≈5.3 nm, which approximately corresponds to the −3 dB spectral width of the laser. Nevertheless, improvements in the conversion efficiency could be obtained by using crystals with wider acceptance bandwidths or/and by reducing the bandwidth of optical spectrum by using appropriate filters or etalons [42]. Further improvement in the conversion efficiency could be achieved by applying polarization control of the fundamental wave to prevent the LBO crystal from affecting the laser polarization.

4. Conclusion

We demonstrate a wafer-fused optically pumped semiconductor disk laser generating 4.6 W of output power at 1580 nm. Through intracavity frequency doubling the disk laser produces up to 1 W of output power at 785 nm. This disk laser concept allows for substantial tailoring of the operation wavelength and offers the potential for power scaling with good beam quality. Future work includes further power scaling of long-wavelength semiconductor disk lasers and improvement of the frequency conversion efficiency. This progress is expected through thermal management enhancement of the gain element and optimization of the laser cavity.

New applications for long-wavelength semiconductor disk lasers are expected to arise due to the unique combination of characteristics they offer – high power and low-noise operation. In particular, optical pumping of Raman fiber lasers and amplifiers with 1200-1600 nm semiconductor disk lasers provides significant advantages over conventional pumping techniques based on diode lasers and/or fiber converters and could radically change Raman fiber technology. Finally, high power SDLs operating at 700-800 nm could significantly increases the number of potential SDL applications, including spectroscopy, atomic cooling and biophotonics.

Acknowledgments

The authors acknowledge the technical help of Vladimir Iakovlev and Grigore Suruceanu from BeamExpress S.A, Lausanne, Switzerland, and Lauri Toikkanen and Jari Nikkinen from the Optoelectronics Research Centre, Tampere University of Technology.

References and links

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References

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
    [CrossRef]
  2. Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
    [CrossRef] [PubMed]
  3. M. Rahim, F. Felder, M. Fill, and H. Zogg, “Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader,” Opt. Lett. 33(24), 3010–3012 (2008).
    [CrossRef] [PubMed]
  4. J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
    [CrossRef]
  5. A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
    [CrossRef]
  6. T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
    [CrossRef]
  7. J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
    [CrossRef]
  8. S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
    [CrossRef]
  9. M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
    [CrossRef]
  10. T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
    [CrossRef]
  11. J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
    [CrossRef]
  12. W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
    [CrossRef] [PubMed]
  13. M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
    [CrossRef]
  14. J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
    [CrossRef]
  15. P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
    [CrossRef] [PubMed]
  16. J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
    [CrossRef] [PubMed]
  17. T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
    [CrossRef]
  18. V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
    [CrossRef]
  19. V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
    [CrossRef] [PubMed]
  20. J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
    [CrossRef]
  21. M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
    [CrossRef]
  22. J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
    [CrossRef] [PubMed]
  23. H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
    [CrossRef]
  24. M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
    [CrossRef]
  25. N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
    [CrossRef]
  26. C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
    [CrossRef]
  27. A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
    [CrossRef]
  28. J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009, paper CB5_3.
  29. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
    [CrossRef] [PubMed]
  30. J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
    [CrossRef]
  31. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
    [CrossRef] [PubMed]
  32. A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
    [CrossRef] [PubMed]
  33. M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).
  34. B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
    [CrossRef]
  35. A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
    [CrossRef]
  36. Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
    [CrossRef]
  37. J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
    [CrossRef]
  38. J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
    [CrossRef]
  39. J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
    [CrossRef]
  40. C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
    [CrossRef]
  41. C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
    [CrossRef]
  42. A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
    [CrossRef]

2011 (5)

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

2010 (4)

2009 (4)

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
[CrossRef] [PubMed]

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

2008 (6)

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

M. Rahim, F. Felder, M. Fill, and H. Zogg, “Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader,” Opt. Lett. 33(24), 3010–3012 (2008).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

2007 (4)

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

2006 (3)

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

2004 (6)

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

2003 (1)

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

2002 (1)

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

2001 (1)

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

2000 (1)

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

1999 (1)

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

1997 (3)

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

1996 (1)

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Abram, R.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Ackemann, T.

Adamiec, P.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Bartschke, J.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Bedford, R.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Behrend, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Benchabane, S.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

Berseth, C.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Boller, K.-J.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Bugge, F.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Burns, D.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Butkus, M.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Butterworth, S.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Caliman, A.

Calvez, S.

P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
[CrossRef] [PubMed]

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Caprara, A.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Carlin, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Charles, J.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Chatterjee, S.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Chernikov, A.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Chilla, J.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
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J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
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J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
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Cho, S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Chow, Y.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Czyszanowski, T.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Dainese, M.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Dawson, M.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Dawson, M. D.

Dion, J.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Dittmar, F.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Du, C.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
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Elm, R.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Erbert, G. Ö.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Fallahi, M.

Fan, L.

Felder, F.

Ferguson, A.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
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J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Ferguson, A. I.

Fernandez, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Fill, M.

Fricke, J. Ö.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Fu, K.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Gambling, W.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Gerster, E.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Gomes, L.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Guden, M.

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Guina, M.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Guina, M. D.

Hader,

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hader, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Hamilton, C. J.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Härkonen, A.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

Härkönen, A.

Hasler, K.-H.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Hastie, J.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Hastie, J. E.

Herrmann, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

Hessenius, C.

Hessenius, J.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hilbich, S.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Honda, Y.

Hongbo Li, J. V.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hopkins, J.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Iakovlev, V.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Jeon, C.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Jouhti, T.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Kaneda, C.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Kaneda, Y.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

Kannengiesser, C.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Kapon, E.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Kemp, A.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Kim, G. B.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, J.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

Kim, J.-Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, K.-S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, T.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Kitaoka, Y.

Knappe, R.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Koch, J.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Koch, M.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

Koch, S.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Konttinen, J.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Korpijärvi, V.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Korpijärvi, V. M.

Krestnikov, I.

Krestnikov, I. L.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Krysa, A.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Krysa, A. B.

Kunert, B.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Kunert, W.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Laakso, N.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Larsson, A.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Lee, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Lee, J. H.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Lee, S. M.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Lee, S.-M.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Leinonen, T.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
[CrossRef] [PubMed]

Leroy, L.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Li, L.

Li Fan, Y.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

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Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

Lindberg, H.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Liu, J.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Liu, Y.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Livshits, D. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Lyytikäinen, J.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

Maclean, A.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

Malcolm, G. P. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

McGinily, S.

Mereuta, A.

Mikhrin, S. S.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Miyazono, K.

Moloney, B.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Moloney, J.

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Moloney, J. V.

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Mori, Y.

Morton, L.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Mueller, J.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Murray,

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Nikkinen, J.

Nishioka, M.

Okhotnikov, O.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Okhotnikov, O. G.

Ostroumov, V.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Oudar, J.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Park, Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Park, Y. J.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Pavelescu, E.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Peng, C.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Pessa, M.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
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Peyghambarian, N.

Piprek, J.

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
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Puustinen, J.

V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
[CrossRef] [PubMed]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Rafailov, E. U.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Rahim, M.

Ranta, S.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Rantamäki, A.

Rattunde, M.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Rautiainen, J.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Reed, M.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
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J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
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C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
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Riis, E.

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Roberts, J.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Rudra, A.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
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Sagnes, I.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Sasaki, T.

Schlosser, P. J.

Schmid, M.

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

Schulz, N.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Seelert, W.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Shao, Z.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Shimatani, H.

Shimizu, Y.

Shu, Q.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

Sirbu, A.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

Smith, S.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Spinelli, L.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Stolz, S. W.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Stolz, W.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Strassner, M.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Sumpf, B.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Sun, H.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Symonds, C.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Syrbu, A.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Tavast, M.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Teng, B.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Toikkanen, L.

Torabi-Goudarzi, F.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

TrÄnkle, G. Ü.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Tukiainen, A.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Tuomisto, P.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Volet, N.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Wagner, J.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Walczak, J.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Wallenstein, R.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Wang, C.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Wang, J.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Wang, T.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Wang, Z.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Wasiak, M.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Weiss, E.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Wenzel, H.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Xu, X.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Yarborough, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Yarborough, J. M.

Yoo, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Yoshimura, M.

Zeitschel, A.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Zhang, W.

Zhou, H.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

Zhu, Q.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Zogg, H.

Zorn, M.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Adv. Opt. Technol. (1)

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. B (1)

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Appl. Phys. Lett. (4)

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Electron. Lett. (6)

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

IEEE J. Quantum Electron. (2)

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (4)

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

IEEE Photon. Technol. Lett. (5)

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

J. Cryst. Growth (1)

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Laser Photon. Rev. (1)

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Model. Simul. Mater. Sci. Eng. (1)

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Opt. Commun. (1)

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Opt. Express (6)

Opt. Lett. (3)

Photon. Spectra (1)

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

Proc. SPIE (3)

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Other (1)

J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009, paper CB5_3.

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Figures (4)

Fig. 1
Fig. 1

Cavity schematic of the wafer-fused SDL producing 4.6 W of output power at 1580 nm. The output coupling ratio is close to 1.5%.

Fig. 2
Fig. 2

Output power as function of pump power for two gain element temperatures. The laser spectra and the output beam taken at the highest output power are shown in the insets.

Fig. 3
Fig. 3

Cavity schematic of the frequency-doubled SDL producing 1 W of output power at 785 nm. The mode diameter in the 6 mm long LBO crystal was estimated to be 140 μm.

Fig. 4
Fig. 4

Frequency-doubled output power as a function of pump power. The temperature of the gain element was kept at 15°C. The laser spectra and the output beam taken at the highest output power are shown in the insets.

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