Abstract
Polymer integrated reverse symmetry waveguides on porous silicon substrate fabricated by using deep ultraviolet radiation in poly(methyl methacrylate) are presented. The layer sequence and geometry of the waveguide enable an evanescent field extending more than into the upper waveguide or analyte layer, enabling various integrated optical devices where large evanescent fields are required. The presented fabrication technique enables the generation of defined regions where the evanescent field is larger than in the rest of the waveguide. This technology can improve the performance of evanescent-wave-based waveguide devices.
© 2007 Optical Society of America
Full Article | PDF ArticleMore Like This
Yasuhisa Ichihashi, Patric Henzi, Mathias Bruendel, Juergen Mohr, and Dominik Gerhard Rabus
Opt. Lett. 32(4) 379-381 (2007)
Wei-Ching Chuang, Ching-Kong Chao, and Chi-Ting Ho
Opt. Express 15(14) 8649-8659 (2007)
Xiaolong Wang, Li Wang, Wei Jiang, and Ray T. Chen
Opt. Lett. 32(6) 677-679 (2007)