Abstract

We report on the carrier transfer and thermal escape in CdTe/ZnTe quantum dots (QDs) grown on a GaAs substrate. The significant emission-energy-dependent decay time at high excitation intensity (35 W/cm2) is attributed to the lateral transfer of carriers in the QDs. At low temperature (< 35 K) and low emission energy (< 2.168 eV), a thermally activated transition occurs between two different states separated by approximately 9 meV, while the main contribution to nonradiative processes is the thermal escape from QDs that is assisted by carrier scattering via the emission of longitudinal phonons through the excited QD states at high temperature, with energies of approximately 19 meV.

© 2014 Optical Society of America

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    [CrossRef]
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2013 (1)

J. H. Lee, J. C. Choi, H. S. Lee, “Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates,” J. Mater. Res. 28(11), 1466–1470 (2013).
[CrossRef]

2012 (1)

2011 (1)

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

2010 (1)

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

2009 (2)

S. C. Lee, S. Krishna, S. R. J. Brueck, “Quantum dot infrared photodetector enhanced by surface plasma wave excitation,” Opt. Express 17(25), 23160–23168 (2009).
[CrossRef] [PubMed]

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

2007 (3)

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

T. X. Lee, K. F. Gao, W. T. Chien, C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

2006 (3)

H. S. Lee, H. L. Park, T. W. Kim, “Optical properties of CdTe/ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers,” Appl. Phys. Lett. 89(18), 181929 (2006).
[CrossRef]

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

2005 (2)

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

2004 (2)

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

2003 (1)

O. Labeau, P. Tamarat, B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett. 90(25), 257404 (2003).
[CrossRef] [PubMed]

2002 (1)

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

2001 (1)

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

1999 (3)

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

1998 (1)

V. I. Klimov, D. W. McBranch, “Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals,” Phys. Rev. Lett. 80(18), 4028–4031 (1998).
[CrossRef]

1997 (3)

V. I. Klimov, D. W. McBranch, “Auger-process-induced charge separation in semiconductor nanocrystals,” Phys. Rev. B 55(19), 13173–13179 (1997).
[CrossRef]

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

H. Gotoh, H. Ando, T. Takagahara, “Radiative recombination lifetime of excitons in thin quantum boxes,” J. Appl. Phys. 81(4), 1785–1789 (1997).
[CrossRef]

1995 (1)

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

1992 (1)

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

1990 (2)

S. Rudin, T. L. Reinecke, B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Phys. Rev. B Condens. Matter 42(17), 11218–11231 (1990).
[CrossRef] [PubMed]

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

1989 (2)

A. Nakamura, H. Yamada, T. Tokizaki, “Size-dependent radiative decay of excitons in CuCl semiconducting quantum spheres embedded in glasses,” Phys. Rev. B Condens. Matter 40(12), 8585–8588 (1989).
[CrossRef] [PubMed]

G. Gourdon, P. Lavallard, “Exciton transfer between localized states in CdS1−xSex alloys,” Phys. Status Solidi B 153(2), 641–652 (1989).
[CrossRef]

1986 (1)

M. C. Nuss, W. Zinth, W. Kaiser, “Femtosecond carrier relaxation in semiconductor‐doped glasses,” Appl. Phys. Lett. 49(25), 1717–1719 (1986).
[CrossRef]

Abstreiter, G.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Alferov, Zh. I.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Alt, H. C.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Ando, H.

H. Gotoh, H. Ando, T. Takagahara, “Radiative recombination lifetime of excitons in thin quantum boxes,” J. Appl. Phys. 81(4), 1785–1789 (1997).
[CrossRef]

Anni, M.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Arakawa, Y.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Baimuratov, A. S.

Baranov, A. V.

Bawendi, M. G.

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

Benz, K. W.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Bichler, M.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Bigenwald, P.

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

Bimberg, D.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Bogani, F.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Bordel, D.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Bosacchi, A.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Bretagnon, T.

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

Brueck, S. R. J.

Buller, G. S.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Cataluna, M. A.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Chang, W. H.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Chastaingt, B.

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Chien, W. T.

Choi, J. C.

J. H. Lee, J. C. Choi, H. S. Lee, “Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates,” J. Mater. Res. 28(11), 1466–1470 (2013).
[CrossRef]

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

Chou, W. C.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Cingolani, R.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

Clarke, E.

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

Colocci, M.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Cretí, A.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

De Giorgi, M.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

Della Sala, F.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Deparis, C.

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Ducommun, Y.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Evtikhiev, V. P.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Fedorov, A. V.

Finley, J. J.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Franchi, S.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Frigeri, P.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Furumiya, M.

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

Gao, K. F.

Garcia, J. M.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

Gerthsen, D.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Gil, B.

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

Gomis, J.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

Gordeev, N. Y.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Gotoh, H.

H. Gotoh, H. Ando, T. Takagahara, “Radiative recombination lifetime of excitons in thin quantum boxes,” J. Appl. Phys. 81(4), 1785–1789 (1997).
[CrossRef]

Gourdon, C.

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

Gourdon, G.

G. Gourdon, P. Lavallard, “Exciton transfer between localized states in CdS1−xSex alloys,” Phys. Status Solidi B 153(2), 641–652 (1989).
[CrossRef]

Granados, D.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

Guimard, D.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Gurioli, M.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Han, W. I.

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

Harbord, E.

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

Heiss, D.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Hoffmann, A.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Hofmann, D. M.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Ikehara, T.

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

Itoh, T.

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

Kaiser, W.

M. C. Nuss, W. Zinth, W. Kaiser, “Femtosecond carrier relaxation in semiconductor‐doped glasses,” Appl. Phys. Lett. 49(25), 1717–1719 (1986).
[CrossRef]

Karachinsky, L. Y.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Kim, T. W.

H. S. Lee, H. L. Park, T. W. Kim, “Optical properties of CdTe/ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers,” Appl. Phys. Lett. 89(18), 181929 (2006).
[CrossRef]

Kissel, H.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Klimov, V. I.

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

V. I. Klimov, D. W. McBranch, “Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals,” Phys. Rev. Lett. 80(18), 4028–4031 (1998).
[CrossRef]

V. I. Klimov, D. W. McBranch, “Auger-process-induced charge separation in semiconductor nanocrystals,” Phys. Rev. B 55(19), 13173–13179 (1997).
[CrossRef]

Krestnikov, I. L.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Krishna, S.

Kroutvar, M.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Kudera, S.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

Labeau, O.

O. Labeau, P. Tamarat, B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett. 90(25), 257404 (2003).
[CrossRef] [PubMed]

Lanzani, G.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Lavallard, P.

G. Gourdon, P. Lavallard, “Exciton transfer between localized states in CdS1−xSex alloys,” Phys. Status Solidi B 153(2), 641–652 (1989).
[CrossRef]

Leatherdale, C. A.

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

Ledentsov, N. N.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Lee, H.

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

Lee, H. S.

J. H. Lee, J. C. Choi, H. S. Lee, “Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates,” J. Mater. Res. 28(11), 1466–1470 (2013).
[CrossRef]

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

H. S. Lee, H. L. Park, T. W. Kim, “Optical properties of CdTe/ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers,” Appl. Phys. Lett. 89(18), 181929 (2006).
[CrossRef]

Lee, J. H.

J. H. Lee, J. C. Choi, H. S. Lee, “Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates,” J. Mater. Res. 28(11), 1466–1470 (2013).
[CrossRef]

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

Lee, S. C.

Lee, T. X.

Lee, W. Z.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Lee, Y. C.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Lefebvre, P.

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

Leo, G.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Leonov, M. Y.

Lin, C. A.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Lippi, L.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Litvin, A. P.

Lomascolo, M.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Lounis, B.

O. Labeau, P. Tamarat, B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett. 90(25), 257404 (2003).
[CrossRef] [PubMed]

Lowe-Webb, R. R.

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

Lu, H. C.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Lundin, W. V.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Maaref, M. A.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

Manna, L.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Martinez-Pastor, J.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Masselink, W. T.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Massies, J.

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

Mazur, Y. I.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

McBranch, D. W.

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

V. I. Klimov, D. W. McBranch, “Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals,” Phys. Rev. Lett. 80(18), 4028–4031 (1998).
[CrossRef]

V. I. Klimov, D. W. McBranch, “Auger-process-induced charge separation in semiconductor nanocrystals,” Phys. Rev. B 55(19), 13173–13179 (1997).
[CrossRef]

Meyer, B. K.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Morello, G.

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

Morihara, R.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Müller-Vogt, G.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Murray, R.

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

Muschik, T.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Musikhin, Yu. G.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Nakamura, A.

A. Nakamura, H. Yamada, T. Tokizaki, “Size-dependent radiative decay of excitons in CuCl semiconducting quantum spheres embedded in glasses,” Phys. Rev. B Condens. Matter 40(12), 8585–8588 (1989).
[CrossRef] [PubMed]

Nishioka, M.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Nötzel, R.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

Novikov, V. B.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Nuss, M. C.

M. C. Nuss, W. Zinth, W. Kaiser, “Femtosecond carrier relaxation in semiconductor‐doped glasses,” Appl. Phys. Lett. 49(25), 1717–1719 (1986).
[CrossRef]

Ouerghui, W.

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

Park, H. L.

H. S. Lee, H. L. Park, T. W. Kim, “Optical properties of CdTe/ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers,” Appl. Phys. Lett. 89(18), 181929 (2006).
[CrossRef]

Pellegrini, S.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Petrov, V.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Rafailov, E. U.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Reinecke, T. L.

S. Rudin, T. L. Reinecke, B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Phys. Rev. B Condens. Matter 42(17), 11218–11231 (1990).
[CrossRef] [PubMed]

Rosa-Clot, M.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Ruaan, R. C.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Rudin, S.

S. Rudin, T. L. Reinecke, B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Phys. Rev. B Condens. Matter 42(17), 11218–11231 (1990).
[CrossRef] [PubMed]

Rukhlenko, I. D.

Rupp, E.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Sakharov, A. V.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Salk, M.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Sanguinetti, S.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

Schuh, D.

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Segall, B.

S. Rudin, T. L. Reinecke, B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Phys. Rev. B Condens. Matter 42(17), 11218–11231 (1990).
[CrossRef] [PubMed]

Sercel, P. C.

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

Shen, J. L.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Shkolnik, A. S.

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

Shu, G. W.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Sibbett, W.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Spencer, P.

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

Stadler, W.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Sun, C. C.

Taddei, S.

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Takagahara, T.

H. Gotoh, H. Ando, T. Takagahara, “Radiative recombination lifetime of excitons in thin quantum boxes,” J. Appl. Phys. 81(4), 1785–1789 (1997).
[CrossRef]

Tamarat, P.

O. Labeau, P. Tamarat, B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett. 90(25), 257404 (2003).
[CrossRef] [PubMed]

Tanabe, K.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Tarasov, G. G.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Tokizaki, T.

A. Nakamura, H. Yamada, T. Tokizaki, “Size-dependent radiative decay of excitons in CuCl semiconducting quantum spheres embedded in glasses,” Phys. Rev. B Condens. Matter 40(12), 8585–8588 (1989).
[CrossRef] [PubMed]

Tomm, J. W.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Tsatsul’nikov, A. F.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Turkov, V. K.

Usikov, A. S.

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

Vinattieri, A.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Wakayama, Y.

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

Walther, C.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Wang, J. S.

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Weigel, E.

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

Yamada, H.

A. Nakamura, H. Yamada, T. Tokizaki, “Size-dependent radiative decay of excitons in CuCl semiconducting quantum spheres embedded in glasses,” Phys. Rev. B Condens. Matter 40(12), 8585–8588 (1989).
[CrossRef] [PubMed]

Yang, W.

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

Yu, J. S.

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

Zamfirescu, M.

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

Zavelani Rossi, M.

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

Zhuchenko, Z. Y.

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

Zinth, W.

M. C. Nuss, W. Zinth, W. Kaiser, “Femtosecond carrier relaxation in semiconductor‐doped glasses,” Appl. Phys. Lett. 49(25), 1717–1719 (1986).
[CrossRef]

Appl. Phys. Lett. (7)

M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, P. Frigeri, “Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering,” Appl. Phys. Lett. 74(4), 564–566 (1999).
[CrossRef]

Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko, W. T. Masselink, “Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots,” Appl. Phys. Lett. 78(21), 3214–3216 (2001).
[CrossRef]

L. Y. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Y. Gordeev, V. P. Evtikhiev, V. B. Novikov, “Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates,” Appl. Phys. Lett. 84(1), 7–9 (2004).
[CrossRef]

D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, Y. Arakawa, “Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. Phys. Lett. 96(20), 203507 (2010).
[CrossRef]

H. S. Lee, H. L. Park, T. W. Kim, “Optical properties of CdTe/ZnTe quantum dots sandwiched between two quantum wells with ZnTe separation barriers,” Appl. Phys. Lett. 89(18), 181929 (2006).
[CrossRef]

W. I. Han, J. H. Lee, J. S. Yu, J. C. Choi, H. S. Lee, “Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well,” Appl. Phys. Lett. 99(23), 231908 (2011).
[CrossRef]

M. C. Nuss, W. Zinth, W. Kaiser, “Femtosecond carrier relaxation in semiconductor‐doped glasses,” Appl. Phys. Lett. 49(25), 1717–1719 (1986).
[CrossRef]

Eur. Phys. J. B (1)

W. Ouerghui, J. Martinez-Pastor, J. Gomis, M. A. Maaref, D. Granados, J. M. Garcia, “Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings,” Eur. Phys. J. B 54(2), 217–223 (2006).
[CrossRef]

J. Appl. Phys. (1)

H. Gotoh, H. Ando, T. Takagahara, “Radiative recombination lifetime of excitons in thin quantum boxes,” J. Appl. Phys. 81(4), 1785–1789 (1997).
[CrossRef]

J. Mater. Res. (1)

J. H. Lee, J. C. Choi, H. S. Lee, “Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates,” J. Mater. Res. 28(11), 1466–1470 (2013).
[CrossRef]

J. Phys. Chem. C (1)

G. Morello, M. De Giorgi, S. Kudera, L. Manna, R. Cingolani, M. Anni, “Temperature and size dependence of nonradiative relaxation and exciton-phonon coupling in colloidal CdTe quantum dots,” J. Phys. Chem. C 111(16), 5846–5849 (2007).
[CrossRef]

Nanotechnology (1)

W. Z. Lee, G. W. Shu, J. S. Wang, J. L. Shen, C. A. Lin, W. H. Chang, R. C. Ruaan, W. C. Chou, H. C. Lu, Y. C. Lee, “Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots,” Nanotechnology 16(9), 1517–1521 (2005).
[CrossRef]

Nat. Photonics (1)

E. U. Rafailov, M. A. Cataluna, W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[CrossRef]

Nature (1)

M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley, “Optically programmable electron spin memory using semiconductor quantum dots,” Nature 432(7013), 81–84 (2004).
[CrossRef] [PubMed]

Opt. Express (3)

Phys. Rev. B (7)

V. I. Klimov, D. W. McBranch, “Auger-process-induced charge separation in semiconductor nanocrystals,” Phys. Rev. B 55(19), 13173–13179 (1997).
[CrossRef]

W. Yang, R. R. Lowe-Webb, H. Lee, P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots,” Phys. Rev. B 56(20), 13314–13320 (1997).
[CrossRef]

A. Cretí, M. Anni, M. Zavelani Rossi, G. Lanzani, G. Leo, F. Della Sala, L. Manna, M. Lomascolo, “Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects,” Phys. Rev. B 72(12), 125346 (2005).
[CrossRef]

M. Gurioli, A. Vinattieri, M. Zamfirescu, M. Colocci, S. Sanguinetti, R. Nötzel, “Recombination kinetics of InAs quantum dots: Role of thermalization in dark states,” Phys. Rev. B 73(8), 085302 (2006).
[CrossRef]

E. Harbord, P. Spencer, E. Clarke, R. Murray, “Radiative lifetimes in undoped and p-doped InAs/GaAs quantum dots,” Phys. Rev. B 80(19), 195312 (2009).
[CrossRef]

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66(15), 155310 (2002).
[CrossRef]

V. I. Klimov, D. W. McBranch, C. A. Leatherdale, M. G. Bawendi, “Electron and hole relaxation pathways in semiconductor quantum dots,” Phys. Rev. B 60(19), 13740–13749 (1999).
[CrossRef]

Phys. Rev. B Condens. Matter (4)

A. Nakamura, H. Yamada, T. Tokizaki, “Size-dependent radiative decay of excitons in CuCl semiconducting quantum spheres embedded in glasses,” Phys. Rev. B Condens. Matter 40(12), 8585–8588 (1989).
[CrossRef] [PubMed]

W. Stadler, D. M. Hofmann, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, K. W. Benz, “Optical investigations of defects in Cd1-xZnxTe,” Phys. Rev. B Condens. Matter 51(16), 10619–10630 (1995).
[CrossRef] [PubMed]

M. Gurioli, J. Martinez-Pastor, M. Colocci, C. Deparis, B. Chastaingt, J. Massies, “Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures,” Phys. Rev. B Condens. Matter 46(11), 6922–6927 (1992).
[CrossRef] [PubMed]

S. Rudin, T. L. Reinecke, B. Segall, “Temperature-dependent exciton linewidths in semiconductors,” Phys. Rev. B Condens. Matter 42(17), 11218–11231 (1990).
[CrossRef] [PubMed]

Phys. Rev. Lett. (2)

O. Labeau, P. Tamarat, B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett. 90(25), 257404 (2003).
[CrossRef] [PubMed]

V. I. Klimov, D. W. McBranch, “Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals,” Phys. Rev. Lett. 80(18), 4028–4031 (1998).
[CrossRef]

Phys. Status Solidi B (2)

G. Gourdon, P. Lavallard, “Exciton transfer between localized states in CdS1−xSex alloys,” Phys. Status Solidi B 153(2), 641–652 (1989).
[CrossRef]

P. Bigenwald, P. Lefebvre, T. Bretagnon, B. Gil, “Confined excitons in GaN-AlGaN quantum wells,” Phys. Status Solidi B 216(1), 371–374 (1999).
[CrossRef]

Solid State Commun. (1)

T. Itoh, M. Furumiya, T. Ikehara, C. Gourdon, “Size-dependent radiative decay time of confined excitons in CuCl microcrystals,” Solid State Commun. 73(4), 271–274 (1990).
[CrossRef]

Other (2)

B. Valeur, Molecular Fluorescence (Wiley-VCH, 2002).

D. Chatterji, The Theory of Auger Transitions (Academic, 1976).

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Figures (4)

Fig. 1
Fig. 1

PL spectrum at 20 K for the 3.5 ML CdTe/ZnTe QDs with an excitation power of 1 mW. The inset shows the AFM image of the 3.5 ML CdTe QDs grown on a ZnTe buffer layer.

Fig. 2
Fig. 2

(a)-(d) Time-resolved PL spectra at 20 K for the 3.5 ML CdTe/ZnTe QDs at different emission energies. (e) Decay time of the 3.5 ML CdTe/ZnTe QDs as a function of emission energy. The solid line represents PL spectrum at 20 K for the 3.5 ML CdTe/ZnTe with an excitation power of 3.5 mW. The dashed line indicates the fitting curve for the radiative lifetime of transfer energies.

Fig. 3
Fig. 3

(a)-(e) Time-resolved PL spectra for peak energies of the 3.5 ML CdTe/ZnTe QDs at several temperatures. (f) Decay time of the 3.5 ML CdTe/ZnTe QDs as a function of temperature. The solid line indicates the fitting curve obtained using the thermal escape model.

Fig. 4
Fig. 4

(a) Time-resolved PL spectra at several excitation intensities for the 3.5 ML CdTe/ZnTe QDs. (b) Decay time of the 3.5 ML CdTe/ZnTe QDs as a function of excitation intensity.

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

τ(ω)= τ rad {1+exp[(ω E me )/ E local ]} 1
Γ rec (T)=1/ τ decay = Γ R (T)+ Γ NR (T)
Γ R (T)= 1 τ 0 [1+gexp(ΔE/ k B T)]
Γ NR (T)= Γ 0 exp( E esp / k B T)
1 τ decay = 1 τ 0 [1+gexp(ΔE/ k B T)] + Γ 0 exp( E esp / k B T)]

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