K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
E. Kasper, M. Kittler, M. Oehme, and T. Arguirov, “Germanium tin: silicon photonics toward the mid-infrared,” Photonics Res. 1(2), 69–76 (2013).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge on Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photonics Technol. Lett. 21(13), 920–922 (2009).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
B. Jalali, “Can silicon change photonics?” Phys. Status Solidi 205(2), 213–224 (2008).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge on Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photonics Technol. Lett. 21(13), 920–922 (2009).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
E. Kasper, M. Kittler, M. Oehme, and T. Arguirov, “Germanium tin: silicon photonics toward the mid-infrared,” Photonics Res. 1(2), 69–76 (2013).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
E. Kasper, “Prospects and challenges of silicon/germanium on-chip optoelectronics,” Front. Optoelectron. China 3(2), 143–152 (2010).
[Crossref]
S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge on Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photonics Technol. Lett. 21(13), 920–922 (2009).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
E. Kasper, M. Kittler, M. Oehme, and T. Arguirov, “Germanium tin: silicon photonics toward the mid-infrared,” Photonics Res. 1(2), 69–76 (2013).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge on Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photonics Technol. Lett. 21(13), 920–922 (2009).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
J. Wang and S. Lee, “Ge-photodetectors for Si-based optoelectronic integration,” Sensors 11(1), 696–718 (2011).
[Crossref]
[PubMed]
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
E. Kasper, M. Kittler, M. Oehme, and T. Arguirov, “Germanium tin: silicon photonics toward the mid-infrared,” Photonics Res. 1(2), 69–76 (2013).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge on Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photonics Technol. Lett. 21(13), 920–922 (2009).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, “Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn,” Thin Solid Films (2013), doi.org/10.1016/j.tsf.2013.10.064 .
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
R. Soref, “Silicon photonics: A review of recent literature,” Silicon 2(1), 1–6 (2010).
[Crossref]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, “GeSn/Ge heterostructure short-wave infrared photodetectors on silicon,” Opt. Express 20(25), 27297–27303 (2012).
[Crossref]
[PubMed]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
J. Wang and S. Lee, “Ge-photodetectors for Si-based optoelectronic integration,” Sensors 11(1), 696–718 (2011).
[Crossref]
[PubMed]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menéndez, and J. Kouvetakis, “High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]
M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, E. Kasper, and J. Schulze, “Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range,” Thin Solid Films 525, 110–114 (2012).
[Crossref]
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98(6), 061108 (2011).
[Crossref]
M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze, “Germanium on silicon photodetectors with broad spectral range,” J. Electrochem. Soc. 157(2), H144–H148 (2010).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze, “GeSn p-i-n detectors integrated on Si with up to 4% Sn,” Appl. Phys. Lett. 101(14), 141110 (2012).
[Crossref]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, “GeSn heterojunction LEDs on Si substrates,” IEEE Photonics Technol. Lett. (2013).
R. Kotlyar, U. E. Avci, S. Cea, R. Rios, T. D. Linton, K. J. Kuhn, and I. A. Young, “Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors,” Appl. Phys. Lett. 102(11), 113106 (2013).
[Crossref]
K. Alberi, J. Blacksberg, L. D. Bell, S. Nikzad, K. M. Yu, O. D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1−x semiconducting alloys,” Phys. Rev. B 77(7), 073202 (2008).
[Crossref]
O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, “Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates,” Jpn. J. Appl. Phys. 49, 04DA10 (2010).
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]
S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,” Opt. Express 19(7), 6400–6405 (2011).
[Crossref]
[PubMed]