S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photon. 2(2), 201–228 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
Z. Y. Zhang, Q. Jiang, and R. A. Hogg, “Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process,” Appl. Phys. Lett. 93(7), 071111 (2008).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
C. L. Walker, A. C. Bryce, and J. H. Marsh, “Improved catastrophic optical damage level from laser with nonabsorbing mirrors,” IEEE Photon. Technol. Lett. 14(10), 1394–1396 (2002).
[Crossref]
C. Akcay, P. Parrein, and J. P. Rolland, “Estimation of longitudinal resolution in optical coherence imaging,” Appl. Opt. 41(25), 5256–5262 (2002).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
Y. Zhang, M. Sato, and N. Tanno, “Numerical investigations of optimal synthesis of several low coherence sources for resolution improvement,” Opt. Commun. 192(3-6), 183–192 (2001).
[Crossref]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
R. D. Feldman, E. E. Harstead, S. Jiang, T. H. Wood, and M. Zirngibl, “An evaluation of architectures incorporating wavelength division multiplexing,” J. Lightwave Technol. 16(9), 1546–1559 (1998).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
[Crossref]
W. Burns, C. Lin, and R. Moeller, “Fiber-optic gyroscopes with broad-band sources,” J. Lightwave Technol. 1(1), 98–105 (1983).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
C. L. Walker, A. C. Bryce, and J. H. Marsh, “Improved catastrophic optical damage level from laser with nonabsorbing mirrors,” IEEE Photon. Technol. Lett. 14(10), 1394–1396 (2002).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
W. Burns, C. Lin, and R. Moeller, “Fiber-optic gyroscopes with broad-band sources,” J. Lightwave Technol. 1(1), 98–105 (1983).
[Crossref]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photon. 2(2), 201–228 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, Q. Jiang, and R. A. Hogg, “Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process,” Appl. Phys. Lett. 93(7), 071111 (2008).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, Q. Jiang, and R. A. Hogg, “Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process,” Appl. Phys. Lett. 93(7), 071111 (2008).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
R. M. Cohen, G. Li, C. Jagadish, P. T. Burke, and M. Gal, “Native defect engineering of interdiffusion using thermally grown oxides of GaAs,” Appl. Phys. Lett. 73(6), 803–805 (1998).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
W. Burns, C. Lin, and R. Moeller, “Fiber-optic gyroscopes with broad-band sources,” J. Lightwave Technol. 1(1), 98–105 (1983).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photon. 2(2), 201–228 (2010).
[Crossref]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
C. L. Walker, A. C. Bryce, and J. H. Marsh, “Improved catastrophic optical damage level from laser with nonabsorbing mirrors,” IEEE Photon. Technol. Lett. 14(10), 1394–1396 (2002).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
W. Burns, C. Lin, and R. Moeller, “Fiber-optic gyroscopes with broad-band sources,” J. Lightwave Technol. 1(1), 98–105 (1983).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
W. Drexler, U. Morgner, F. X. Kärtner, C. Pitris, S. A. Boppart, X. D. Li, E. P. Ippen, and J. G. Fujimoto, “In vivo ultrahigh-resolution optical coherence tomography,” Opt. Lett. 24(17), 1221–1223 (1999).
[Crossref]
[PubMed]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
Y. Zhang, M. Sato, and N. Tanno, “Numerical investigations of optimal synthesis of several low coherence sources for resolution improvement,” Opt. Commun. 192(3-6), 183–192 (2001).
[Crossref]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
[Crossref]
Y. Zhang, M. Sato, and N. Tanno, “Numerical investigations of optimal synthesis of several low coherence sources for resolution improvement,” Opt. Commun. 192(3-6), 183–192 (2001).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
A. Pepin, C. Vieu, M. Schneider, H. Launois, and Y. Nissim, “Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures,” J. Vac. Sci. Technol. B 15(1), 142–153 (1997).
[Crossref]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
[Crossref]
C. L. Walker, A. C. Bryce, and J. H. Marsh, “Improved catastrophic optical damage level from laser with nonabsorbing mirrors,” IEEE Photon. Technol. Lett. 14(10), 1394–1396 (2002).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photon. 2(2), 201–228 (2010).
[Crossref]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
Y. Zhang, M. Sato, and N. Tanno, “Numerical investigations of optimal synthesis of several low coherence sources for resolution improvement,” Opt. Commun. 192(3-6), 183–192 (2001).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photon. 2(2), 201–228 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
Z. Y. Zhang, Q. Jiang, and R. A. Hogg, “Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process,” Appl. Phys. Lett. 93(7), 071111 (2008).
[Crossref]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi, “Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser,” Appl. Phys. Lett. 90(3), 031101 (2007).
[Crossref]
S. M. Chen, K. J. Zhou, Z. Y. Zhang, D. T. D. Childs, M. Hugues, A. J. Ramsay, and R. A. Hogg, “Ultra-broad spontaneous emission and modal gain spectrum from a hybrid quantum well/quantum dot laser structure,” Appl. Phys. Lett. 100(4), 041118 (2012).
[Crossref]
Z. Y. Zhang, Q. Jiang, and R. A. Hogg, “Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process,” Appl. Phys. Lett. 93(7), 071111 (2008).
[Crossref]
L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, “Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide,” Appl. Phys. Lett. 82(16), 2613–2615 (2003).
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[Crossref]
Q. Jiang, Z. Y. Zhang, M. Hopkinson, and R. A. Hogg, “High performance intermixed p-doped quantum dot superluminescent diodes at 1.2μm,” Electron. Lett. 46(4), 295–296 (2010).
[Crossref]
L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[Crossref]
B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, and J. S. Roberts, “Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion,” IEEE J. Quantum Electron. 33(10), 1784–1793 (1997).
[Crossref]
X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[Crossref]
Y. C. Xin, A. Martinez, T. Saiz, A. J. Moscho, Y. Li, T. A. Nilsen, A. L. Gray, and L. F. Lester, “1.3μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth,” IEEE Photon. Technol. Lett. 19(7), 501–503 (2007).
[Crossref]
Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[Crossref]
C. L. Walker, A. C. Bryce, and J. H. Marsh, “Improved catastrophic optical damage level from laser with nonabsorbing mirrors,” IEEE Photon. Technol. Lett. 14(10), 1394–1396 (2002).
[Crossref]
X. C. Wang, S. J. Xu, S. J. Chua, Z. H. Zhang, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie, “Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing,” J. Appl. Phys. 86(5), 2687–2690 (1999).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
Z. Y. Zhang, Q. Jiang, I. J. Luxmoore, and R. A. Hogg, “A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap,” Nanotechnology 20(5), 055204 (2009).
[Crossref]
[PubMed]
W. Drexler, U. Morgner, R. K. Ghanta, F. X. Kärtner, J. S. Schuman, and J. G. Fujimoto, “Ultrahigh-resolution ophthalmic optical coherence tomography,” Nat. Med. 7(4), 502–507 (2001).
[Crossref]
[PubMed]
Y. Zhang, M. Sato, and N. Tanno, “Numerical investigations of optimal synthesis of several low coherence sources for resolution improvement,” Opt. Commun. 192(3-6), 183–192 (2001).
[Crossref]
Z. Y. Zhang, Q. Jiang, M. Hopkinson, and R. A. Hogg, “Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes,” Opt. Express 18(7), 7055–7063 (2010).
[Crossref]
[PubMed]
A.-R. Bellancourt, Y. Barbarin, D. J. H. C. Maas, M. Shafiei, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration,” Opt. Express 17(12), 9704–9711 (2009).
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[Crossref]
[PubMed]
Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[Crossref]
[PubMed]
S. Grosse, J. H. H. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto, “Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects,” Phys. Rev. B 55(7), 4473–4476 (1997).
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