Abstract

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
    [CrossRef]
  2. Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
    [CrossRef] [PubMed]
  3. M. Rahim, F. Felder, M. Fill, and H. Zogg, “Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader,” Opt. Lett. 33(24), 3010–3012 (2008).
    [CrossRef] [PubMed]
  4. J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
    [CrossRef]
  5. A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
    [CrossRef]
  6. T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
    [CrossRef]
  7. J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
    [CrossRef]
  8. S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
    [CrossRef]
  9. M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
    [CrossRef]
  10. T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
    [CrossRef]
  11. J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
    [CrossRef]
  12. W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
    [CrossRef] [PubMed]
  13. M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
    [CrossRef]
  14. J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
    [CrossRef]
  15. P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
    [CrossRef] [PubMed]
  16. J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
    [CrossRef] [PubMed]
  17. T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
    [CrossRef]
  18. V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
    [CrossRef]
  19. V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
    [CrossRef] [PubMed]
  20. J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
    [CrossRef]
  21. M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
    [CrossRef]
  22. J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
    [CrossRef] [PubMed]
  23. H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
    [CrossRef]
  24. M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
    [CrossRef]
  25. N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
    [CrossRef]
  26. C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
    [CrossRef]
  27. A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
    [CrossRef]
  28. J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009, paper CB5_3.
  29. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
    [CrossRef] [PubMed]
  30. J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
    [CrossRef]
  31. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
    [CrossRef] [PubMed]
  32. A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
    [CrossRef] [PubMed]
  33. M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).
  34. B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
    [CrossRef]
  35. A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
    [CrossRef]
  36. Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
    [CrossRef]
  37. J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
    [CrossRef]
  38. J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
    [CrossRef]
  39. J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
    [CrossRef]
  40. C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
    [CrossRef]
  41. C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
    [CrossRef]
  42. A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
    [CrossRef]

2011

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

2010

2009

P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
[CrossRef] [PubMed]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

2008

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

M. Rahim, F. Felder, M. Fill, and H. Zogg, “Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader,” Opt. Lett. 33(24), 3010–3012 (2008).
[CrossRef] [PubMed]

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

2007

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

2006

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

2004

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

2003

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

2002

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

2001

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

2000

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

1999

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

1997

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

1996

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Abram, R.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Ackemann, T.

Adamiec, P.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Bartschke, J.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Bedford, R.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Behrend, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Benchabane, S.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

Berseth, C.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Boller, K.-J.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Bugge, F.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Burns, D.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Butkus, M.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Butterworth, S.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Caliman, A.

Calvez, S.

P. J. Schlosser, J. E. Hastie, S. Calvez, A. B. Krysa, and M. D. Dawson, “InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm,” Opt. Express 17(24), 21782–21787 (2009).
[CrossRef] [PubMed]

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Caprara, A.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Carlin, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Charles, J.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Chatterjee, S.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Chernikov, A.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Chilla, J.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Cho, S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Chow, Y.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Czyszanowski, T.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Dainese, M.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Dawson, M.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Dawson, M. D.

Dion, J.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Dittmar, F.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Du, C.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Elm, R.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Erbert, G. Ö.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Fallahi, M.

Fan, L.

Felder, F.

Ferguson, A.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Ferguson, A. I.

Fernandez, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Fill, M.

Fricke, J. Ö.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Fu, K.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Gambling, W.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Gerster, E.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Gomes, L.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Guden, M.

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Guina, M.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Guina, M. D.

Hader,

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hader, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Hamilton, C. J.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Härkonen, A.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

Härkönen, A.

Hasler, K.-H.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Hastie, J.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Hastie, J. E.

Herrmann, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

Hessenius, C.

Hessenius, J.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hilbich, S.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Honda, Y.

Hongbo Li, J. V.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Hopkins, J.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Iakovlev, V.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Jeon, C.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Jouhti, T.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Kaneda, C.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Kaneda, Y.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Y. Kaneda, J. M. Yarborough, L. Li, N. Peyghambarian, L. Fan, C. Hessenius, M. Fallahi, J. Hader, J. V. Moloney, Y. Honda, M. Nishioka, Y. Shimizu, K. Miyazono, H. Shimatani, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, “Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator,” Opt. Lett. 33(15), 1705–1707 (2008).
[CrossRef] [PubMed]

Kannengiesser, C.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Kapon, E.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Kemp, A.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Kim, G. B.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, J.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

Kim, J.-Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, K.-S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Kim, T.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Kitaoka, Y.

Knappe, R.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Koch, J.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Koch, M.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

Koch, S.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Konttinen, J.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Korpijärvi, V.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Korpijärvi, V. M.

Krestnikov, I.

Krestnikov, I. L.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Krysa, A.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Krysa, A. B.

Kunert, B.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Kunert, W.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Laakso, N.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Larsson, A.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Lee, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Lee, J. H.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Lee, S. M.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Lee, S.-M.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Leinonen, T.

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
[CrossRef] [PubMed]

Leroy, L.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Li, L.

Li Fan, Y.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Liau, Z.

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

Lindberg, H.

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Liu, J.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Liu, Y.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Livshits, D. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Lyytikäinen, J.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

Maclean, A.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

Malcolm, G. P. A.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

McGinily, S.

Mereuta, A.

Mikhrin, S. S.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Miyazono, K.

Moloney, B.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Moloney, J.

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Moloney, J. V.

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Mori, Y.

Morton, L.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Mueller, J.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Murray,

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Nikkinen, J.

Nishioka, M.

Okhotnikov, O.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Okhotnikov, O. G.

Ostroumov, V.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Oudar, J.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Park, Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Park, Y. J.

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

Pavelescu, E.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Peng, C.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Pessa, M.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Peyghambarian, N.

Piprek, J.

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Puustinen, J.

V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641, 641 (2010).
[CrossRef] [PubMed]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Rafailov, E. U.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

Rahim, M.

Ranta, S.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Rantamäki, A.

Rattunde, M.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Rautiainen, J.

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Reed, M.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Reekie, L.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Riis, E.

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Roberts, J.

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Rudra, A.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Sagnes, I.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Sasaki, T.

Schlosser, P. J.

Schmid, M.

W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, “Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser,” Appl. Opt. 45(29), 7729–7735 (2006).
[CrossRef] [PubMed]

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

Schulz, N.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Seelert, W.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Shao, Z.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Shimatani, H.

Shimizu, Y.

Shu, Q.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

Sirbu, A.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “13-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

Smith, S.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Spinelli, L.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Stolz, S. W.

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

Stolz, W.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Strassner, M.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

Sumpf, B.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Sun, H.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Symonds, C.

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

Syrbu, A.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Tavast, M.

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

Teng, B.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Toikkanen, L.

Torabi-Goudarzi, F.

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

TrÄnkle, G. Ü.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Tukiainen, A.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Tuomisto, P.

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Volet, N.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Wagner, J.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Walczak, J.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Wallenstein, R.

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

Wang, C.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Wang, J.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Wang, T.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Wang, Z.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Wasiak, M.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Weiss, E.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

Wenzel, H.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Xu, X.

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Yarborough, J.

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

Yarborough, J. M.

Yoo, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

Yoshimura, M.

Zeitschel, A.

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

Zhang, W.

Zhou, H.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

Zhu, Q.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Zogg, H.

Zorn, M.

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

Adv. Opt. Technol.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands,” Adv. Opt. Technol. 2011, 1–8 (2011).
[CrossRef]

Appl. Opt.

Appl. Phys. B

C. Du, Z. Wang, J. Liu, X. Xu, B. Teng, K. Fu, J. Wang, Y. Liu, and Z. Shao, “Efficient intracavity second-harmonic generation at 1.06 µm in a BiB3O6 (BIBO) crystal,” Appl. Phys. B 73(3), 215–217 (2001).
[CrossRef]

Appl. Phys. Lett.

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
[CrossRef]

J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
[CrossRef]

M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, “Optical in-well pumping of a vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 84(24), 4860 (2004).
[CrossRef]

J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, “Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser,” Appl. Phys. Lett. 89(6), 061114 (2006).
[CrossRef]

Electron. Lett.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105–107 (2007).
[CrossRef]

T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, “7.4 W yellow GaInNAs based semiconductor disk laser,” Electron. Lett. 47(20), 1139–1440 (2011).
[CrossRef]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[CrossRef]

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

IEEE J. Quantum Electron.

A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, “Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader,” IEEE J. Quantum Electron. 44(3), 216–225 (2008).
[CrossRef]

J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, “Investigation of efficient self-frequency-doubling Nd:YAB Lasers,” IEEE J. Quantum Electron. 33(12), 2295–2300 (1997).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, “Heat management in high-power vertical external- cavity surface-emitting lasers,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1772–1778 (2011).
[CrossRef]

M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, “Quantum dot based semiconductor disk lasers for 1-1.3 μm,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1763–1771 (2011).
[CrossRef]

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, “High-brightness quantum well tapered lasers,” IEEE J. Sel. Top. Quantum Electron. 15(3), 1009–1020 (2009).
[CrossRef]

IEEE Photon. Technol. Lett.

T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, “High-power optically pumped semiconductor laser at 1040 nm,” IEEE Photon. Technol. Lett. 22(9), 661–663 (2010).
[CrossRef]

J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

M. Fallahi, Y. Li Fan, C. Kaneda, J. Hessenius, Hader, J. V. Hongbo Li, B. Moloney, W. Kunert, S. W. Stolz, J. Koch, Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[CrossRef]

J. Cryst. Growth

V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Laser Photon. Rev.

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Model. Simul. Mater. Sci. Eng.

M. Guden and J. Piprek, “Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

Opt. Commun.

C. Wang, L. Reekie, Y. Chow, and W. Gambling, “Efficient blue light generation from a diode laser pumped Nd: YAG laser,” Opt. Commun. 167(1–6), 155–158 (1999).
[CrossRef]

Opt. Express

Opt. Lett.

Photon. Spectra

M. Schmid, “Optically in-well-pumped VECSELs: An attractive new aource in the near-IR,” Photon. Spectra 38(11), 58–64 (2004).

Proc. SPIE

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109, 645109-10 (2007).
[CrossRef]

J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” Proc. SPIE 5332, 143–150 (2004).
[CrossRef]

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
[CrossRef]

Other

J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009, paper CB5_3.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Cavity schematic of the wafer-fused SDL producing 4.6 W of output power at 1580 nm. The output coupling ratio is close to 1.5%.

Fig. 2
Fig. 2

Output power as function of pump power for two gain element temperatures. The laser spectra and the output beam taken at the highest output power are shown in the insets.

Fig. 3
Fig. 3

Cavity schematic of the frequency-doubled SDL producing 1 W of output power at 785 nm. The mode diameter in the 6 mm long LBO crystal was estimated to be 140 μm.

Fig. 4
Fig. 4

Frequency-doubled output power as a function of pump power. The temperature of the gain element was kept at 15°C. The laser spectra and the output beam taken at the highest output power are shown in the insets.

Metrics