Near-field Raman imaging using optically trapped dielectric microsphere

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

R. Ossikovski, Q. Nguyen, and G. Picardi, “Simple model for the polarization effects in tip-enhanced Raman spectroscopy,” Phys. Rev. B 75, 045412 (2007).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

K. J. Yi, H. Wang, Y. F. Lu, and Z. Y. Yang, “Enhanced Raman scattering by self-assembled silica spherical microparticles,” J. Appl. Phys. 101, 063528 (2007).
[Crossref]

T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, “Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging,” J. Appl. Phys. 100, 073511 (2006).
[Crossref]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

N. Anderson, A. Bouhelier, and L. Novotny, “Near-field photonics: tip-enhanced microscopy and spectroscopy on the nanoscale,” J. Opt. A 8, S227–S233 (2006).
[Crossref]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

X. Li, Z. G. Chen, A. Taflove, and V. Backman, “Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets,” Opt. Express 13, 526–533 (2005).
[Crossref] [PubMed]

S. Lecler, Y. Takakura, and P. Meyrueis, “Properties of a three-dimensional photonic jet,” Opt. Lett. 30, 2641–2643 (2005).
[Crossref] [PubMed]

A. L. Birkbeck, S. Zlatanovic, S. C. Esener, and M. Ozkan, “Laser-tweezer-controlled solid immersion microscopy in microfluidic systems,” Opt. Lett. 30, 2712–2714 (2005).
[Crossref] [PubMed]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

D. J. Paul, “Si/SiGe heterostructures: from material and physics to devices and circuits,” Semicond. Sci. Technol. 19, R75–R108 (2004).
[Crossref]

W. X. Sun and Z. X. Shen, “Near-field scanning Raman microscopy using apertureless probes,” J. Raman Spectrosc. 34, 668–676 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Combining high resolution and tensorial analysis in Raman stress measurements of silicon,” J. Appl. Phys. 94, 2729–2740 (2003).
[Crossref]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

D. Richards, R. G. Milner, F. Huang, and F. Festy, “Tip-enhanced Raman microscopy: practicalities and limitations,” J. Raman Spectrosc. 34, 66–667 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon,” Appl. Phys. Lett. 81, 3377–3379 (2002).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

M. S. Anderson, “Locally enhanced Raman spectroscopy with an atomic force microscope,” Appl. Phys. Lett. 76, 3130–3132 (2000).
[Crossref]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

A. Ashkin, “Optical trapping and manipulation of neutral particles using lasers,” Proc. Natl. Acad. Sci. USA 94, 4853–4860 (1997).
[Crossref] [PubMed]

I. D. Wolf, H. E. Maes, and S. K. Jones, “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment,” J. Appl. Phys. 79, 7148–7156 (1996).
[Crossref]

C. L. Jahncke, M. A. Paesler, and H. D. Hallen, “Raman imaging with near-field scanning optical microscopy,” Appl. Phys. Lett. 67, 2483–2485 (1995).
[Crossref]

F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, “Scanning interferometric apertureless microscopy: Optical imaging at 10 Angstrom resolution,” Science 269, 1083–1085 (1995).
[Crossref] [PubMed]

B. Hecht, H. Heinzelmann, and D. W. Pohl, “Combined aperture SNOM/PSTM: best of both worlds?,” Ultramicroscopy 57, 228–234 (1995).
[Crossref]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

E. Anastassakis and E. Liarokapis, “Polycrystalline Si under strain: Elastic and lattice-dynamical considerations,” J. Appl. Phys. 62, 3346–3352 (1987).
[Crossref]

D. W. Pohl, W. Denk, and M. Lanz, “Optical stethoscopy: Image recording with resolution l/20,” Appl. Phys. Lett. 44, 651–653 (1984).
[Crossref]

A. Ashkin, “Applications of laser radiation pressure,” Science 210, 1081–1088 (1980).
[Crossref] [PubMed]

E. Anastassakis and E. Liarokapis, “Polycrystalline Si under strain: Elastic and lattice-dynamical considerations,” J. Appl. Phys. 62, 3346–3352 (1987).
[Crossref]

M. S. Anderson, “Locally enhanced Raman spectroscopy with an atomic force microscope,” Appl. Phys. Lett. 76, 3130–3132 (2000).
[Crossref]

N. Anderson, A. Bouhelier, and L. Novotny, “Near-field photonics: tip-enhanced microscopy and spectroscopy on the nanoscale,” J. Opt. A 8, S227–S233 (2006).
[Crossref]

N. Anderson, A. Hartschuh, and L. Novotny, “Near-field Raman microscopy,” Materials Today May, 50–54 (2005).

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

A. Ashkin, “Optical trapping and manipulation of neutral particles using lasers,” Proc. Natl. Acad. Sci. USA 94, 4853–4860 (1997).
[Crossref] [PubMed]

A. Ashkin, “Applications of laser radiation pressure,” Science 210, 1081–1088 (1980).
[Crossref] [PubMed]

X. Li, Z. G. Chen, A. Taflove, and V. Backman, “Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets,” Opt. Express 13, 526–533 (2005).
[Crossref] [PubMed]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Combining high resolution and tensorial analysis in Raman stress measurements of silicon,” J. Appl. Phys. 94, 2729–2740 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon,” Appl. Phys. Lett. 81, 3377–3379 (2002).
[Crossref]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

A. L. Birkbeck, S. Zlatanovic, S. C. Esener, and M. Ozkan, “Laser-tweezer-controlled solid immersion microscopy in microfluidic systems,” Opt. Lett. 30, 2712–2714 (2005).
[Crossref] [PubMed]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Combining high resolution and tensorial analysis in Raman stress measurements of silicon,” J. Appl. Phys. 94, 2729–2740 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon,” Appl. Phys. Lett. 81, 3377–3379 (2002).
[Crossref]

N. Anderson, A. Bouhelier, and L. Novotny, “Near-field photonics: tip-enhanced microscopy and spectroscopy on the nanoscale,” J. Opt. A 8, S227–S233 (2006).
[Crossref]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

X. Li, Z. G. Chen, A. Taflove, and V. Backman, “Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets,” Opt. Express 13, 526–533 (2005).
[Crossref] [PubMed]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

D. W. Pohl, W. Denk, and M. Lanz, “Optical stethoscopy: Image recording with resolution l/20,” Appl. Phys. Lett. 44, 651–653 (1984).
[Crossref]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

A. L. Birkbeck, S. Zlatanovic, S. C. Esener, and M. Ozkan, “Laser-tweezer-controlled solid immersion microscopy in microfluidic systems,” Opt. Lett. 30, 2712–2714 (2005).
[Crossref] [PubMed]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Combining high resolution and tensorial analysis in Raman stress measurements of silicon,” J. Appl. Phys. 94, 2729–2740 (2003).
[Crossref]

E. Bonera, M. Fanciulli, and D. N. Batchelder, “Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon,” Appl. Phys. Lett. 81, 3377–3379 (2002).
[Crossref]

D. Richards, R. G. Milner, F. Huang, and F. Festy, “Tip-enhanced Raman microscopy: practicalities and limitations,” J. Raman Spectrosc. 34, 66–667 (2003).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

C. L. Jahncke, M. A. Paesler, and H. D. Hallen, “Raman imaging with near-field scanning optical microscopy,” Appl. Phys. Lett. 67, 2483–2485 (1995).
[Crossref]

N. Anderson, A. Hartschuh, and L. Novotny, “Near-field Raman microscopy,” Materials Today May, 50–54 (2005).

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

B. Hecht, H. Heinzelmann, and D. W. Pohl, “Combined aperture SNOM/PSTM: best of both worlds?,” Ultramicroscopy 57, 228–234 (1995).
[Crossref]

B. Hecht, H. Heinzelmann, and D. W. Pohl, “Combined aperture SNOM/PSTM: best of both worlds?,” Ultramicroscopy 57, 228–234 (1995).
[Crossref]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

D. Richards, R. G. Milner, F. Huang, and F. Festy, “Tip-enhanced Raman microscopy: practicalities and limitations,” J. Raman Spectrosc. 34, 66–667 (2003).
[Crossref]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

C. L. Jahncke, M. A. Paesler, and H. D. Hallen, “Raman imaging with near-field scanning optical microscopy,” Appl. Phys. Lett. 67, 2483–2485 (1995).
[Crossref]

I. D. Wolf, H. E. Maes, and S. K. Jones, “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment,” J. Appl. Phys. 79, 7148–7156 (1996).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

D. W. Pohl, W. Denk, and M. Lanz, “Optical stethoscopy: Image recording with resolution l/20,” Appl. Phys. Lett. 44, 651–653 (1984).
[Crossref]

S. Lecler, Y. Takakura, and P. Meyrueis, “Properties of a three-dimensional photonic jet,” Opt. Lett. 30, 2641–2643 (2005).
[Crossref] [PubMed]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

X. Li, Z. G. Chen, A. Taflove, and V. Backman, “Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets,” Opt. Express 13, 526–533 (2005).
[Crossref] [PubMed]

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S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

K. J. Yi, H. Wang, Y. F. Lu, and Z. Y. Yang, “Enhanced Raman scattering by self-assembled silica spherical microparticles,” J. Appl. Phys. 101, 063528 (2007).
[Crossref]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

I. D. Wolf, H. E. Maes, and S. K. Jones, “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment,” J. Appl. Phys. 79, 7148–7156 (1996).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, “Scanning interferometric apertureless microscopy: Optical imaging at 10 Angstrom resolution,” Science 269, 1083–1085 (1995).
[Crossref] [PubMed]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

S. Lecler, Y. Takakura, and P. Meyrueis, “Properties of a three-dimensional photonic jet,” Opt. Lett. 30, 2641–2643 (2005).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

D. Richards, R. G. Milner, F. Huang, and F. Festy, “Tip-enhanced Raman microscopy: practicalities and limitations,” J. Raman Spectrosc. 34, 66–667 (2003).
[Crossref]

T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, “Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging,” J. Appl. Phys. 100, 073511 (2006).
[Crossref]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, “Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging,” J. Appl. Phys. 100, 073511 (2006).
[Crossref]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

R. Ossikovski, Q. Nguyen, and G. Picardi, “Simple model for the polarization effects in tip-enhanced Raman spectroscopy,” Phys. Rev. B 75, 045412 (2007).
[Crossref]

N. Anderson, A. Bouhelier, and L. Novotny, “Near-field photonics: tip-enhanced microscopy and spectroscopy on the nanoscale,” J. Opt. A 8, S227–S233 (2006).
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N. Anderson, A. Hartschuh, and L. Novotny, “Near-field Raman microscopy,” Materials Today May, 50–54 (2005).

T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, “Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging,” J. Appl. Phys. 100, 073511 (2006).
[Crossref]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, “Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging,” J. Appl. Phys. 100, 073511 (2006).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

R. Ossikovski, Q. Nguyen, and G. Picardi, “Simple model for the polarization effects in tip-enhanced Raman spectroscopy,” Phys. Rev. B 75, 045412 (2007).
[Crossref]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

A. L. Birkbeck, S. Zlatanovic, S. C. Esener, and M. Ozkan, “Laser-tweezer-controlled solid immersion microscopy in microfluidic systems,” Opt. Lett. 30, 2712–2714 (2005).
[Crossref] [PubMed]

C. L. Jahncke, M. A. Paesler, and H. D. Hallen, “Raman imaging with near-field scanning optical microscopy,” Appl. Phys. Lett. 67, 2483–2485 (1995).
[Crossref]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

D. J. Paul, “Si/SiGe heterostructures: from material and physics to devices and circuits,” Semicond. Sci. Technol. 19, R75–R108 (2004).
[Crossref]

R. Ossikovski, Q. Nguyen, and G. Picardi, “Simple model for the polarization effects in tip-enhanced Raman spectroscopy,” Phys. Rev. B 75, 045412 (2007).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

B. Hecht, H. Heinzelmann, and D. W. Pohl, “Combined aperture SNOM/PSTM: best of both worlds?,” Ultramicroscopy 57, 228–234 (1995).
[Crossref]

D. W. Pohl, W. Denk, and M. Lanz, “Optical stethoscopy: Image recording with resolution l/20,” Appl. Phys. Lett. 44, 651–653 (1984).
[Crossref]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

D. Richards, R. G. Milner, F. Huang, and F. Festy, “Tip-enhanced Raman microscopy: practicalities and limitations,” J. Raman Spectrosc. 34, 66–667 (2003).
[Crossref]

H. G. Frey, C. Bolwien, A. Brandenburg, R. Ros, and D. Anselmetti, “Optimized apertureless optical near-field probes with 15 nm optical resolution,” Nanotechnology 17, 3105–3110 (2006).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

W. X. Sun and Z. X. Shen, “Near-field scanning Raman microscopy using apertureless probes,” J. Raman Spectrosc. 34, 668–676 (2003).
[Crossref]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

S. H. Christiansen, M. Becker, S. Fahlbusch, J. Michler, V. Sivakov, G. Andra, and R. Geiger, “Signal enhancement in nano-Raman spectroscopy by gold caps on silicon nanowires obtained by vapour-liquid-solid growth,” Nanotechnology 18, 035503 (2007).
[Crossref] [PubMed]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

N. Lee, R. D. Hartschuh, D. Mehtani, A. Kisliuk, J. F. Maguire, M. Green, M. D. Foster, and A. P. Sokolov, “High constrast scanning nano-Raman spectroscopy of silicon,” J. Raman Spectrosc. 38, 789–796 (2007).
[Crossref]

J. Kim, J. H. Kim, K. B. Song, S. Q. Lee, E. K. Kim, S. E. Choi, Y. Lee, and K. H. Park, “Near-field imaging of surface plasmon on Au nano-dots fabricated by scanning probe lithography,” J. Microsc. 209, 236–239 (2003).
[Crossref] [PubMed]

J. Grausem, B. Humbert, M. Spajer, D. Courjon, A. Burneau, and J. Oswalt, “Near-field Raman spectroscopy,” J. Raman Specstrosc. 30, 833–840 (1999).
[Crossref]

W. X. Sun and Z. X. Shen, “Near-field scanning Raman microscopy using apertureless probes,” J. Raman Spectrosc. 34, 668–676 (2003).
[Crossref]

X. Li, Z. G. Chen, A. Taflove, and V. Backman, “Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets,” Opt. Express 13, 526–533 (2005).
[Crossref] [PubMed]

S. Lecler, Y. Takakura, and P. Meyrueis, “Properties of a three-dimensional photonic jet,” Opt. Lett. 30, 2641–2643 (2005).
[Crossref] [PubMed]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma, and S. Kawata, “Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,” J. Raman Spectrosc. 38, 684–696 (2007).
[Crossref]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

K. J. Yi, H. Wang, Y. F. Lu, and Z. Y. Yang, “Enhanced Raman scattering by self-assembled silica spherical microparticles,” J. Appl. Phys. 101, 063528 (2007).
[Crossref]

M. Becker, V. Sivakov, G. Andra, R. Geiger, J. Schreiber, S. Hoffmann, J. Michler, A. P. Milenin, P. Werner, and S. H. Christiansen, “The SERS and TERS effects obtained by gold droplets on top of Si nanowires,” Nano Lett. 7, 75–80 (2007).
[Crossref] [PubMed]

F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, “Scanning interferometric apertureless microscopy: Optical imaging at 10 Angstrom resolution,” Science 269, 1083–1085 (1995).
[Crossref] [PubMed]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, and R. Wise, “Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing,” IEEE Trans. Electron Dev. 53, 944–964 (2006).
[Crossref]

V. Senez, A. Armigliato, I. D. Wolf, G. Carnevale, R. Balboni, S. Frabboni, and A. Benedetti, “Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy,” J. Appl. Phys. 94, 5574–5583 (2003).
[Crossref]

I. D. Wolf, H. E. Maes, and S. K. Jones, “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment,” J. Appl. Phys. 79, 7148–7156 (1996).
[Crossref]

S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology,” IEEE Electron Device Lett. 27, 46–48 (2006).
[Crossref]

H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, and H. Qian, “Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction,” Appl. Phys. Lett. 88, 263513 (2006).
[Crossref]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, “Characterization of Si/GexSi1-x structures by micro-Raman imaging,” Appl. Phys. Lett. 84, 2533–2535 (2004).
[Crossref]

K. J. Yi, H. Wang, Y. F. Lu, and Z. Y. Yang, “Enhanced Raman scattering by self-assembled silica spherical microparticles,” J. Appl. Phys. 101, 063528 (2007).
[Crossref]

K. J. Yi, H. Wang, Y. F. Lu, and Z. Y. Yang, “Enhanced Raman scattering by self-assembled silica spherical microparticles,” J. Appl. Phys. 101, 063528 (2007).
[Crossref]

F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, “Scanning interferometric apertureless microscopy: Optical imaging at 10 Angstrom resolution,” Science 269, 1083–1085 (1995).
[Crossref] [PubMed]

B. Hecht, B. Sick, U. P. Wild, V. Deckert, R. Zenobi, O. J. F. Martin, and D. W. Pohl, “Scanning near-field optical microscopy with aperture probes: Fundamentals and applications,” J. Chem. Phys. 112, 7761–7774 (2000).
[Crossref]

A. L. Birkbeck, S. Zlatanovic, S. C. Esener, and M. Ozkan, “Laser-tweezer-controlled solid immersion microscopy in microfluidic systems,” Opt. Lett. 30, 2712–2714 (2005).
[Crossref] [PubMed]

G. Veshapidze, M. L. Trachy, M. H. Shah, and B. D. DePaola, “Reducing the uncertainty in laser beam size measurement with a scanning edge method,” Appl. Opt. 45, 8197–8199 (2006).
[Crossref] [PubMed]

D. W. Pohl, W. Denk, and M. Lanz, “Optical stethoscopy: Image recording with resolution l/20,” Appl. Phys. Lett. 44, 651–653 (1984).
[Crossref]

D. H. Pan, N. Klymyshyn, D. H. Hu, and H. P. Lu, “Tip-enhanced near-field Raman spectroscopy probing single dye-sensitized TiO2 nanoparticles,” Appl. Phys. Lett. 88, 093121 (2006).
[Crossref]

D. P. Tsai, A. Othonos, M. Moskovits, and D. Uttamchandani, “Raman spectroscopy using a fiber optic probe with subwavelength aperture,” Appl. Phys. Lett. 64, 1768–1770 (1994).
[Crossref]

C. L. Jahncke, M. A. Paesler, and H. D. Hallen, “Raman imaging with near-field scanning optical microscopy,” Appl. Phys. Lett. 67, 2483–2485 (1995).
[Crossref]

Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki, and S. Kawata, “Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,” Appl. Phys. Lett. 88, 143109 (2006).
[Crossref]

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