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Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Photon. Res. 7(4), B1-B6 (2019)  View: HTML | PDF

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

Photon. Res. 7(5), B7-B11 (2019)  View: HTML | PDF

AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

Photon. Res. 7(6), B12-B23 (2019)  View: HTML | PDF

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Photon. Res. 7(6), B24-B31 (2019)  View: HTML | PDF

GaN-based ultraviolet microdisk laser diode grown on Si

Photon. Res. 7(6), B32-B35 (2019)  View: HTML | PDF

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