Abstract

The electrical and structural properties of V/Al-based n-contacts on nAlxGa1xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×104  Ω·cm2 whereas for higher Al mole fraction the IV characteristics are rectifying. Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing. Compositional analysis confirmed an Al enrichment at the interface. The interfacial nitride-based layer in n-contacts on nAl0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen. The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed. Finally, ultraviolet C (UVC) LEDs grown on nAl0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120 μW at 20 mA in cw operation.

© 2020 Chinese Laser Press

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2019 (1)

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

2018 (1)

C. G. Moe, S. Sugiyama, J. Kasai, J. R. Grandusky, and L. J. Schowalter, “AlGaN light-emitting diodes on AlN substrates emitting at 230 nm,” Phys. Status Solidi A 215, 1700660 (2018).
[Crossref]

2017 (3)

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

2016 (5)

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
[Crossref]

G. Greco, F. Iucolano, and F. Roccaforte, “Ohmic contacts to gallium nitride materials,” Appl. Surf. Sci. 383, 324–345 (2016).
[Crossref]

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

2015 (1)

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

2014 (1)

Q. Yan, A. Janotti, M. Scheffler, and C. G. Van de Walle, “Origins of optical absorption and emission lines in AlN,” Appl. Phys. Lett. 105, 111104 (2014).
[Crossref]

2013 (3)

D. F. Hevia, C. Stampfl, F. Viñes, and F. Illas, “Microscopic origin of n-type behavior in Si-doped AlN,” Phys. Rev. B 88, 085202 (2013).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

2011 (1)

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

2008 (2)

M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N,” J. Electron. Mater. 37, 564–568 (2008).
[Crossref]

L. Wang, F. M. Mohammed, and I. Adesida, “Formation mechanism of ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations,” J. Appl. Phys. 103, 093516 (2008).
[Crossref]

2007 (1)

L. Wang, F. M. Mohammed, and I. Adesida, “Differences in the reaction kinetics and contact formation mechanisms of annealed Ti/Al/Mo/Au ohmic contacts on n-GaN and AlGaN/GaN epilayers,” J. Appl. Phys. 101, 013702 (2007).
[Crossref]

2006 (1)

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

2005 (2)

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

2004 (1)

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

2003 (1)

M. Yaman and S. Bakirdere, “Identification of chemical forms of lead, cadmium and nickel in sewage sludge of waste water treatment facilities,” Microchim. Acta 141, 47–54 (2003).
[Crossref]

2002 (1)

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

2001 (1)

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

1999 (1)

C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
[Crossref]

1998 (1)

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

1997 (2)

B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, “Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN,” Appl. Phys. Lett. 71, 3859–3861 (1997).
[Crossref]

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

1990 (1)

O. Thomas, S. Gallot, and N. Mazas, “Ultraviolet multiwavelength absorptiometry (UVMA) for the examination of natural waters and wastewaters,” Fresenius J. Anal. Chem. 338, 238–240 (1990).
[Crossref]

Abernathy, C. R.

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

Adesida, I.

L. Wang, F. M. Mohammed, and I. Adesida, “Formation mechanism of ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations,” J. Appl. Phys. 103, 093516 (2008).
[Crossref]

L. Wang, F. M. Mohammed, and I. Adesida, “Differences in the reaction kinetics and contact formation mechanisms of annealed Ti/Al/Mo/Au ohmic contacts on n-GaN and AlGaN/GaN epilayers,” J. Appl. Phys. 101, 013702 (2007).
[Crossref]

Akasaki, I.

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
[Crossref]

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

Alamé, S.

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

Albrecht, M.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Amano, H.

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

Ambacher, O.

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

Anderson, W. T.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

Bakirdere, S.

M. Yaman and S. Bakirdere, “Identification of chemical forms of lead, cadmium and nickel in sewage sludge of waste water treatment facilities,” Microchim. Acta 141, 47–54 (2003).
[Crossref]

Bathe, R.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

Bogart, K. H. A.

M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N,” J. Electron. Mater. 37, 564–568 (2008).
[Crossref]

Cao, X. A.

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

Chu, P. K.

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

Collazo, R.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Courville, A.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Daele, B. V.

B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

Davydov, A. V.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

DeLucca, J. M.

B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, “Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN,” Appl. Phys. Lett. 71, 3859–3861 (1997).
[Crossref]

Derenge, M. A.

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M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
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G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
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S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
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G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
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F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
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F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
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F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
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M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
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F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
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G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
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F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
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M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
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K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

Kusch, G.

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
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F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
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M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
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J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
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B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

Li, J.

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

Liliental-Weber, Z.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

Lin, J. Y.

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

Luther, B. P.

B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, “Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN,” Appl. Phys. Lett. 71, 3859–3861 (1997).
[Crossref]

MacKenzie, J. D.

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

Markurt, T.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Martin, R. W.

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

Mazas, N.

O. Thomas, S. Gallot, and N. Mazas, “Ultraviolet multiwavelength absorptiometry (UVMA) for the examination of natural waters and wastewaters,” Fresenius J. Anal. Chem. 338, 238–240 (1990).
[Crossref]

McCluskey, M. D.

C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
[Crossref]

Mehnke, F.

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Miao, M.

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

Miller, M. A.

M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N,” J. Electron. Mater. 37, 564–568 (2008).
[Crossref]

Moe, C. G.

C. G. Moe, S. Sugiyama, J. Kasai, J. R. Grandusky, and L. J. Schowalter, “AlGaN light-emitting diodes on AlN substrates emitting at 230 nm,” Phys. Status Solidi A 215, 1700660 (2018).
[Crossref]

Mogilatenko, A.

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

Mohammad, S. N.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

Mohammed, F. M.

L. Wang, F. M. Mohammed, and I. Adesida, “Formation mechanism of ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations,” J. Appl. Phys. 103, 093516 (2008).
[Crossref]

L. Wang, F. M. Mohammed, and I. Adesida, “Differences in the reaction kinetics and contact formation mechanisms of annealed Ti/Al/Mo/Au ohmic contacts on n-GaN and AlGaN/GaN epilayers,” J. Appl. Phys. 101, 013702 (2007).
[Crossref]

Mohn, S.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Mohney, S. E.

M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N,” J. Electron. Mater. 37, 564–568 (2008).
[Crossref]

B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, “Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN,” Appl. Phys. Lett. 71, 3859–3861 (1997).
[Crossref]

Mönch, W.

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

Mori, K.

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

Morkoç, H.

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

Moses, P. G.

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

Motayed, A.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

Muhin, A.

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

Nagata, N.

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
[Crossref]

Naresh-Kumar, G.

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

Neugebauer, J.

C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
[Crossref]

Nienhaus, H.

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

Noor Mohammad, S.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

Nouf-Allehiani, M.

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

Pearton, S. J.

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

Piao, H.

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

Pingel, H.

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Qiao, D.

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

Rabe, M.

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

Rass, J.

M. Kneissl and J. Rass, III-Nitride Ultraviolet Emitters—Technology and Applications, Vol. 227of Springer Series in Material Science (Spinger, 2016).

Reich, C.

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Reshchikov, M. A.

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

Roccaforte, F.

G. Greco, F. Iucolano, and F. Roccaforte, “Ohmic contacts to gallium nitride materials,” Appl. Surf. Sci. 383, 324–345 (2016).
[Crossref]

Ruvimov, S.

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

Ruythooren, W.

B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

Scheffler, M.

Q. Yan, A. Janotti, M. Scheffler, and C. G. Van de Walle, “Origins of optical absorption and emission lines in AlN,” Appl. Phys. Lett. 105, 111104 (2014).
[Crossref]

Schneider, M.

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

Schowalter, L. J.

C. G. Moe, S. Sugiyama, J. Kasai, J. R. Grandusky, and L. J. Schowalter, “AlGaN light-emitting diodes on AlN substrates emitting at 230 nm,” Phys. Status Solidi A 215, 1700660 (2018).
[Crossref]

Senga, T.

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
[Crossref]

Sitar, Z.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Smith, D. J.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

Son, N. T.

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

Stampfl, C.

D. F. Hevia, C. Stampfl, F. Viñes, and F. Illas, “Microscopic origin of n-type behavior in Si-doped AlN,” Phys. Rev. B 88, 085202 (2013).
[Crossref]

C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
[Crossref]

Stolyarchuk, N.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Stutzmann, M.

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

Sugiyama, S.

C. G. Moe, S. Sugiyama, J. Kasai, J. R. Grandusky, and L. J. Schowalter, “AlGaN light-emitting diodes on AlN substrates emitting at 230 nm,” Phys. Status Solidi A 215, 1700660 (2018).
[Crossref]

Sulmoni, L.

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

Takeda, K.

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

Takeuchi, T.

K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction,” Jpn. J. Appl. Phys. 55, 05FL03 (2016).
[Crossref]

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
[Crossref]

Tendeloo, G. V.

B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

Thomas, O.

O. Thomas, S. Gallot, and N. Mazas, “Ultraviolet multiwavelength absorptiometry (UVMA) for the examination of natural waters and wastewaters,” Fresenius J. Anal. Chem. 338, 238–240 (1990).
[Crossref]

Trager-Cowan, C.

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

Trinh, X. T.

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

Unger, R.-S.

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

Van de Walle, C. G.

Q. Yan, A. Janotti, M. Scheffler, and C. G. Van de Walle, “Origins of optical absorption and emission lines in AlN,” Appl. Phys. Lett. 105, 111104 (2014).
[Crossref]

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
[Crossref]

Vennéguès, P.

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. D. Felice, Z. Sitar, P. Vennéguès, and M. Albrecht, “Polarity control in group-III nitrides beyond pragmatism,” Phys. Rev. Appl. 5, 054004 (2016).
[Crossref]

Viñes, F.

D. F. Hevia, C. Stampfl, F. Viñes, and F. Illas, “Microscopic origin of n-type behavior in Si-doped AlN,” Phys. Rev. B 88, 085202 (2013).
[Crossref]

Vispute, R. D.

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

Vogt, P.

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

Wang, L.

L. Wang, F. M. Mohammed, and I. Adesida, “Formation mechanism of ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations,” J. Appl. Phys. 103, 093516 (2008).
[Crossref]

L. Wang, F. M. Mohammed, and I. Adesida, “Differences in the reaction kinetics and contact formation mechanisms of annealed Ti/Al/Mo/Au ohmic contacts on n-GaN and AlGaN/GaN epilayers,” J. Appl. Phys. 101, 013702 (2007).
[Crossref]

Washburn, J.

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

Wernicke, T.

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Weyers, M.

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Wood, M. C.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

Yaman, M.

M. Yaman and S. Bakirdere, “Identification of chemical forms of lead, cadmium and nickel in sewage sludge of waste water treatment facilities,” Microchim. Acta 141, 47–54 (2003).
[Crossref]

Yan, Q.

Q. Yan, A. Janotti, M. Scheffler, and C. G. Van de Walle, “Origins of optical absorption and emission lines in AlN,” Appl. Phys. Lett. 105, 111104 (2014).
[Crossref]

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

Zakharov, D. N.

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

Zeimer, U.

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

Zolper, J. C.

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

Appl. Phys. Express (1)

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, and M. Kneissl, “Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217  nm,” Appl. Phys. Express 12, 012008 (2019).
[Crossref]

Appl. Phys. Lett. (8)

G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, “Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N,” Appl. Phys. Lett. 107, 072103 (2015).
[Crossref]

B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, “Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN,” Appl. Phys. Lett. 71, 3859–3861 (1997).
[Crossref]

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, “Microstructure of Ti/Al ohmic contacts for n-AlGaN,” Appl. Phys. Lett. 73, 2582–2584 (1998).
[Crossref]

B. V. Daele, G. V. Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “The role of Al on ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005).
[Crossref]

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of plasma treatment on the ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN,” Appl. Phys. Lett. 89, 082109 (2006).
[Crossref]

S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Electron affinity of AlxGa1-xN (0001) surfaces,” Appl. Phys. Lett. 78, 2503–2505 (2001).
[Crossref]

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, “Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%,” Appl. Phys. Lett. 103, 212109 (2013).
[Crossref]

Q. Yan, A. Janotti, M. Scheffler, and C. G. Van de Walle, “Origins of optical absorption and emission lines in AlN,” Appl. Phys. Lett. 105, 111104 (2014).
[Crossref]

Appl. Surf. Sci. (1)

G. Greco, F. Iucolano, and F. Roccaforte, “Ohmic contacts to gallium nitride materials,” Appl. Surf. Sci. 383, 324–345 (2016).
[Crossref]

Fresenius J. Anal. Chem. (1)

O. Thomas, S. Gallot, and N. Mazas, “Ultraviolet multiwavelength absorptiometry (UVMA) for the examination of natural waters and wastewaters,” Fresenius J. Anal. Chem. 338, 238–240 (1990).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, “Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs,” IEEE J. Sel. Top. Quantum Electron. 23, 29–36 (2017).
[Crossref]

J. Appl. Phys. (7)

L. Wang, F. M. Mohammed, and I. Adesida, “Formation mechanism of ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations,” J. Appl. Phys. 103, 093516 (2008).
[Crossref]

A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer ohmic contacts to n-type GaN,” J. Appl. Phys. 93, 1087–1094 (2002).
[Crossref]

A. Motayed, K. A. Jones, M. A. Derenge, M. C. Wood, D. N. Zakharov, Z. Liliental-Weber, D. J. Smith, A. V. Davydov, W. T. Anderson, A. A. Iliadis, and S. Noor Mohammad, “Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN,” J. Appl. Phys. 95, 1516–1524 (2004).
[Crossref]

L. Wang, F. M. Mohammed, and I. Adesida, “Differences in the reaction kinetics and contact formation mechanisms of annealed Ti/Al/Mo/Au ohmic contacts on n-GaN and AlGaN/GaN epilayers,” J. Appl. Phys. 101, 013702 (2007).
[Crossref]

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, “Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%,” J. Appl. Phys. 120, 145702 (2016).
[Crossref]

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

M. Lapeyrade, S. Alamé, J. Glaab, A. Mogilatenko, R.-S. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, and M. Kneissl, “Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N,” J. Appl. Phys. 122, 125701 (2017).
[Crossref]

J. Chem. Phys. (1)

P. G. Moses, M. Miao, Q. Yan, and C. G. Van de Walle, “Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN,” J. Chem. Phys. 134, 084703 (2011).
[Crossref]

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M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, “Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N,” J. Electron. Mater. 37, 564–568 (2008).
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Microchim. Acta (1)

M. Yaman and S. Bakirdere, “Identification of chemical forms of lead, cadmium and nickel in sewage sludge of waste water treatment facilities,” Microchim. Acta 141, 47–54 (2003).
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C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, “Doping of AlGaN alloys,” MRS Int. J. Nitride Semicond. Res. 4, 890–901 (1999).
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D. F. Hevia, C. Stampfl, F. Viñes, and F. Illas, “Microscopic origin of n-type behavior in Si-doped AlN,” Phys. Rev. B 88, 085202 (2013).
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C. G. Moe, S. Sugiyama, J. Kasai, J. R. Grandusky, and L. J. Schowalter, “AlGaN light-emitting diodes on AlN substrates emitting at 230 nm,” Phys. Status Solidi A 215, 1700660 (2018).
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Phys. Status Solidi C (1)

N. Nagata, T. Senga, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer,” Phys. Status Solidi C 14, 1600243 (2016).
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Semicond. Sci. Technol. (3)

M. Lapeyrade, A. Muhin, S. Einfeldt, U. Zeimer, A. Mogilatenko, M. Weyers, and M. Kneissl, “Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces,” Semicond. Sci. Technol. 28, 125015 (2013).
[Crossref]

G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy,” Semicond. Sci. Technol. 32, 035020 (2017).
[Crossref]

J. Hong, J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and J. C. Zolper, “Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials,” Semicond. Sci. Technol. 12, 1310–1318 (1997).
[Crossref]

Other (2)

M. Kneissl and J. Rass, III-Nitride Ultraviolet Emitters—Technology and Applications, Vol. 227of Springer Series in Material Science (Spinger, 2016).

M. Grundmann, The Physics of Semiconductors: An Introduction Including Devices and Nanophysics (Springer, 2006).

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Figures (5)

Fig. 1.
Fig. 1. Contact resistivity and voltage evaluated at 0.1    kA / cm 2 as a function of the annealing temperature for n-contacts on (a)  n Al 0.75 Ga 0.25 N and on (b)  n Al 0.9 Ga 0.1 N . The insets show the experimental IV curves at an electrode distance of 8 μm for different annealing temperatures.
Fig. 2.
Fig. 2. Experimental IV curves and contact resistivity evaluated at 0.1    kA / cm 2 for n-contacts annealed at 800°C on n Al x Ga 1 x N as a function of the Al mole fraction at an electrode distance of 8 μm.
Fig. 3.
Fig. 3. HAADF STEM images for n-contacts on (a)  n Al 0.75 Ga 0.25 N and on (b)  n Al 0.9 Ga 0.1 N annealed at 850°C. The inset in (a) shows a magnified image of the M/S interface with a thin interfacial AlN layer. (c) Exemplary EDXS line scan across the M/S interface marked by an arrow in (a) for n Al 0.75 Ga 0.25 N . The dashed line indicates the M/S position. (d) Exemplary EELS spectra for N-K and O-K edges measured at the M/S interface for n Al 0.75 Ga 0.25 N and for n Al 0.9 Ga 0.1 N .
Fig. 4.
Fig. 4. HRTEM images of the M/S interface for (a)  n Al 0.75 Ga 0.25 N and for (b)  n Al 0.9 Ga 0.1 N annealed at 850°C. The lower images (c)–(f) show the FFTs of the respective marked areas in the HRTEM micrographs. The M/S interface is indicated by dashed lines.
Fig. 5.
Fig. 5. Experimental LIV, EQE, and WPE curves measured on-wafer for a 0.15 mm 2 LED emitting at 232 nm under cw operation. The inset shows the spectral power density at 20 mA.