Abstract

This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded AlN/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.

© 2019 Chinese Laser Press

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  22. M. X. Feng, J. L. He, Q. Sun, H. W. Gao, Z. C. Li, Y. Zhou, J. P. Liu, S. M. Zhang, D. Y. Li, L. Q. Zhang, X. J. Sun, D. B. Li, H. B. Wang, M. Ikeda, R. X. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26, 5043–5051 (2018).
    [Crossref]
  23. Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37, 044006 (2016).
    [Crossref]
  24. B. Leung, J. Han, and S. Qian, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111),” Phys. Status Solidi 11, 437–441 (2014).
    [Crossref]
  25. D. B. Li, “GaN-on-Si laser diode: open up a new era of Si-based optical interconnections,” Sci. Bull. 61, 1723–1725 (2016).
    [Crossref]
  26. D. M. Zhao and D. G. Zhao, “Analysis of the growth of GaN epitaxy on silicon,” J. Semicond. 39, 033006 (2018).
    [Crossref]
  27. J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
    [Crossref]

2018 (9)

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photon. 10, 43–110 (2018).
[Crossref]

W.-S. Won, L. G. Tran, W.-T. Park, K.-K. Kim, C. S. Shin, N. Kim, Y.-J. Kim, and Y.-J. Yoon, “UV-LEDs for the disinfection and bio-sensing applications,” Int. J. Precis. Eng. Manuf. 19, 1901–1915 (2018).
[Crossref]

G. Y. Zhu, J. P. Li, J. T. Li, J. Y. Guo, J. Dai, C. X. Xu, and Y. J. Wang, “Single-mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk,” Opt. Lett. 43, 647–650 (2018).
[Crossref]

M. X. Feng, J. Wang, R. Zhou, Q. Sun, H. W. Gao, Y. Zhou, J. X. Liu, Y. N. Huang, S. M. Zhang, M. Ikeda, H. B. Wang, Y. T. Zhang, Y. J. Wang, and H. Yang, “On-chip integration of GaN-based laser, modulator, and photodetector grown on Si,” IEEE J. Sel. Top. Quantum Electron. 24, 8200305 (2018).
[Crossref]

M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, and H. Yang, “Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,” ACS Photon. 5, 699–704 (2018).
[Crossref]

Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, and H. Yang, “Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,” Light: Sci. Appl. 7, 13 (2018).
[Crossref]

M. X. Feng, J. L. He, Q. Sun, H. W. Gao, Z. C. Li, Y. Zhou, J. P. Liu, S. M. Zhang, D. Y. Li, L. Q. Zhang, X. J. Sun, D. B. Li, H. B. Wang, M. Ikeda, R. X. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26, 5043–5051 (2018).
[Crossref]

D. M. Zhao and D. G. Zhao, “Analysis of the growth of GaN epitaxy on silicon,” J. Semicond. 39, 033006 (2018).
[Crossref]

J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
[Crossref]

2017 (2)

X. B. Sun, Z. Y. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. C. Yan, H. D. Sun, X. H. Li, J. X. Wang, J. M. Li, M.-S. Alouini, and B. S. Ooi, “71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation,” Opt. Express 25, 23267–23274 (2017).
[Crossref]

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

2016 (6)

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595–599 (2016).
[Crossref]

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37, 044006 (2016).
[Crossref]

P. Miao, Z. F. Zhang, J. B. Sun, W. Walasik, S. Longhi, N. M. Litchinitser, and L. Feng, “Orbital angular momentum microlaser,” Science 353, 464–467 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

D. B. Li, “GaN-on-Si laser diode: open up a new era of Si-based optical interconnections,” Sci. Bull. 61, 1723–1725 (2016).
[Crossref]

2014 (2)

B. Leung, J. Han, and S. Qian, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111),” Phys. Status Solidi 11, 437–441 (2014).
[Crossref]

M. Athanasiou, R. Smith, B. Liu, and T. Wang, “Room temperature continuous-wave green lasing from an InGaN microdisk on silicon,” Sci. Rep. 4, 7250 (2014).
[Crossref]

2010 (1)

C.-C. Chen, M. H. Shih, Y.-C. Yang, and H.-C. Kuo, “Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector,” Appl. Phys. Lett. 96, 151115 (2010).
[Crossref]

2008 (2)

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2, 551–554 (2008).
[Crossref]

Z. Y. Xu and B. M. Sadler, “Ultraviolet communications potential and state-of-the-art,” IEEE Commun. Mag. 46, 67–73 (2008).
[Crossref]

2007 (1)

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1, 61–64 (2007).
[Crossref]

2006 (1)

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89, 211101 (2006).
[Crossref]

2004 (1)

X. Liu, W. Fang, Y. Huang, X. H. Wu, S. T. Ho, H. Cao, and R. P. H. Chang, “Optically pumped ultraviolet microdisk laser on a silicon substrate,” Appl. Phys. Lett. 84, 2488–2490 (2004).
[Crossref]

2003 (2)

K. J. Vahala, “Optical microcavities,” Nature 424, 839–846 (2003).
[Crossref]

M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Continuous-wave operation of ultraviolet InGaN-InAlGaN multiple-quantum-well laser diodes,” Appl. Phys. Lett. 82, 2386–2388 (2003).
[Crossref]

Alouini, M.-S.

Athanasiou, M.

M. Athanasiou, R. Smith, B. Liu, and T. Wang, “Room temperature continuous-wave green lasing from an InGaN microdisk on silicon,” Sci. Rep. 4, 7250 (2014).
[Crossref]

Boucaud, P.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Brimont, C.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Cao, H.

X. Liu, W. Fang, Y. Huang, X. H. Wu, S. T. Ho, H. Cao, and R. P. H. Chang, “Optically pumped ultraviolet microdisk laser on a silicon substrate,” Appl. Phys. Lett. 84, 2488–2490 (2004).
[Crossref]

Chaaban, A.

Chang, R. P. H.

X. Liu, W. Fang, Y. Huang, X. H. Wu, S. T. Ho, H. Cao, and R. P. H. Chang, “Optically pumped ultraviolet microdisk laser on a silicon substrate,” Appl. Phys. Lett. 84, 2488–2490 (2004).
[Crossref]

Checoury, X.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Chen, C.-C.

C.-C. Chen, M. H. Shih, Y.-C. Yang, and H.-C. Kuo, “Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector,” Appl. Phys. Lett. 96, 151115 (2010).
[Crossref]

Chen, P.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89, 211101 (2006).
[Crossref]

Chen, R.

Choi, H. W.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89, 211101 (2006).
[Crossref]

Chua, S. J.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89, 211101 (2006).
[Crossref]

Crepel, V.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Dai, J.

Damilano, B.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Duan, L. H.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

El Kurdi, M.

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet, “III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,” Appl. Phys. Lett. 109, 231101 (2016).
[Crossref]

Fang, W.

X. Liu, W. Fang, Y. Huang, X. H. Wu, S. T. Ho, H. Cao, and R. P. H. Chang, “Optically pumped ultraviolet microdisk laser on a silicon substrate,” Appl. Phys. Lett. 84, 2488–2490 (2004).
[Crossref]

Feng, B.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37, 044006 (2016).
[Crossref]

Feng, L.

P. Miao, Z. F. Zhang, J. B. Sun, W. Walasik, S. Longhi, N. M. Litchinitser, and L. Feng, “Orbital angular momentum microlaser,” Science 353, 464–467 (2016).
[Crossref]

Feng, M. X.

M. X. Feng, J. Wang, R. Zhou, Q. Sun, H. W. Gao, Y. Zhou, J. X. Liu, Y. N. Huang, S. M. Zhang, M. Ikeda, H. B. Wang, Y. T. Zhang, Y. J. Wang, and H. Yang, “On-chip integration of GaN-based laser, modulator, and photodetector grown on Si,” IEEE J. Sel. Top. Quantum Electron. 24, 8200305 (2018).
[Crossref]

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J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
[Crossref]

M. X. Feng, J. L. He, Q. Sun, H. W. Gao, Z. C. Li, Y. Zhou, J. P. Liu, S. M. Zhang, D. Y. Li, L. Q. Zhang, X. J. Sun, D. B. Li, H. B. Wang, M. Ikeda, R. X. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26, 5043–5051 (2018).
[Crossref]

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595–599 (2016).
[Crossref]

Zhang, X. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89, 211101 (2006).
[Crossref]

Zhang, Y. T.

M. X. Feng, J. Wang, R. Zhou, Q. Sun, H. W. Gao, Y. Zhou, J. X. Liu, Y. N. Huang, S. M. Zhang, M. Ikeda, H. B. Wang, Y. T. Zhang, Y. J. Wang, and H. Yang, “On-chip integration of GaN-based laser, modulator, and photodetector grown on Si,” IEEE J. Sel. Top. Quantum Electron. 24, 8200305 (2018).
[Crossref]

Zhang, Z. F.

P. Miao, Z. F. Zhang, J. B. Sun, W. Walasik, S. Longhi, N. M. Litchinitser, and L. Feng, “Orbital angular momentum microlaser,” Science 353, 464–467 (2016).
[Crossref]

Zhang, Z. Y.

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D. M. Zhao and D. G. Zhao, “Analysis of the growth of GaN epitaxy on silicon,” J. Semicond. 39, 033006 (2018).
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D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

Zhao, D. M.

D. M. Zhao and D. G. Zhao, “Analysis of the growth of GaN epitaxy on silicon,” J. Semicond. 39, 033006 (2018).
[Crossref]

Zhao, H. M.

Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37, 044006 (2016).
[Crossref]

Zheng, X. H.

M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, and H. Yang, “Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,” ACS Photon. 5, 699–704 (2018).
[Crossref]

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J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
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Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, and H. Yang, “Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,” Light: Sci. Appl. 7, 13 (2018).
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Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595–599 (2016).
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M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, and H. Yang, “Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,” ACS Photon. 5, 699–704 (2018).
[Crossref]

M. X. Feng, J. Wang, R. Zhou, Q. Sun, H. W. Gao, Y. Zhou, J. X. Liu, Y. N. Huang, S. M. Zhang, M. Ikeda, H. B. Wang, Y. T. Zhang, Y. J. Wang, and H. Yang, “On-chip integration of GaN-based laser, modulator, and photodetector grown on Si,” IEEE J. Sel. Top. Quantum Electron. 24, 8200305 (2018).
[Crossref]

J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
[Crossref]

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J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, and H. Yang, “On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,” Sci. Rep. 8, 7922 (2018).
[Crossref]

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[Crossref]

M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, and H. Yang, “Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,” ACS Photon. 5, 699–704 (2018).
[Crossref]

Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, and H. Yang, “Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,” Light: Sci. Appl. 7, 13 (2018).
[Crossref]

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595–599 (2016).
[Crossref]

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Zhu, J. J.

D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

ACS Photon. (1)

M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, and H. Yang, “Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,” ACS Photon. 5, 699–704 (2018).
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Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, and H. Yang, “GaN-on-Si blue/white LEDs: epitaxy, chip, and package,” J. Semicond. 37, 044006 (2016).
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Light: Sci. Appl. (1)

Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, and H. Yang, “Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,” Light: Sci. Appl. 7, 13 (2018).
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Science (1)

P. Miao, Z. F. Zhang, J. B. Sun, W. Walasik, S. Longhi, N. M. Litchinitser, and L. Feng, “Orbital angular momentum microlaser,” Science 353, 464–467 (2016).
[Crossref]

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Figures (5)

Fig. 1.
Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (10 1 ¯ 2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.
Fig. 2.
Fig. 2. (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.
Fig. 3.
Fig. 3. Schematic process flow of the microdisk LD structure with an air-bridge electrode.
Fig. 4.
Fig. 4. (a) EL spectra of the microdisk LD with a radius of 12 μm measured under various pulsed electrical currents. (b) FWHM of the EL spectra and integrated intensity of the EL spectra as a function of the injection current. The pulse width and repetition rate were 400 ns and 10 kHz, respectively.
Fig. 5.
Fig. 5. Threshold current, Ith, as a function of the inner circle radius for the microring LDs with an outer circle radius, R , of 20 μm.

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