Abstract

AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible- and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination. This opto-electronic response achieved responsivity >108  A/W at room temperature while allowing HEMTs to be electrically biased in the off-state for low dark current and low DC power dissipation. The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated, along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity. The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer, thus enabling the same device design to be tuned for either visible- or solar-blind detection.

© 2019 Chinese Laser Press

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  20. S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
    [Crossref]
  21. A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
    [Crossref]
  22. Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
    [Crossref]

2018 (2)

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

K. Bergemann and F. Léonard, “Room-temperature phototransistor with negative photoresponsivity of 108  A W−1 using fullerene-sensitized aligned carbon nanotubes,” Small 14, 1802806 (2018).
[Crossref]

2017 (5)

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

2016 (2)

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

2015 (1)

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

2014 (1)

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

2013 (2)

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

2012 (1)

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

2009 (2)

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

2008 (1)

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

2007 (1)

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

2006 (2)

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100, 054306 (2006).
[Crossref]

2000 (1)

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Abate, V. M.

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Agnihotri, P.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Akasaki, I.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Allerman, A. A.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

Amano, H.

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Armstrong, A. M.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Asif, F.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Baca, A. G.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Beechem, T. E.

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

Bell, L. D.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Bergemann, K.

K. Bergemann and F. Léonard, “Room-temperature phototransistor with negative photoresponsivity of 108  A W−1 using fullerene-sensitized aligned carbon nanotubes,” Small 14, 1802806 (2018).
[Crossref]

Cao, D. P.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Chandrashekhar, M. V. S.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Chen, D. J.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Chua, S. J.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100, 054306 (2006).
[Crossref]

Coleman, A.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Crawford, M. H.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Douglas, E. A.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Farrer, I.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Fortune, T. R.

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

Fujii, T.

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Gansen, E. J.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Geboff, A.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Greene, M.

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Greene, M. B.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

Hadfield, R. H.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Harvey, T. E.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Hogg, R. A.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Howell, S. W.

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

Hwang, S.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Ikeda, K.

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

Ishiguro, M.

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

Iwaya, M.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Kamiyama, S.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Kaplar, R. J.

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

Khan, A.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Klein, B.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

Klein, B. A.

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Kotula, P. G.

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Kusafuka, T.

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

Leadbeater, M. L.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Leathersich, J. M.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Lensch-Falk, J. L.

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Léonard, F.

K. Bergemann and F. Léonard, “Room-temperature phototransistor with negative photoresponsivity of 108  A W−1 using fullerene-sensitized aligned carbon nanotubes,” Small 14, 1802806 (2018).
[Crossref]

Li, L.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Li, Z. H.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Limmer, S. J.

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Lu, H.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Lunev, A.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Luo, W. J.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Medlin, D. L.

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Miller, M. A.

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Mirin, R. P.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Miura, S.

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Mizuno, M.

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

Model, J.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Muhtadi, S.

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

Murase, T.

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Nagase, K.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

Nam, S. W.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Nikzad, S.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Norman, C. E.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

O’Sullivan, M. P.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Okumura, T.

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

Pepper, M.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Pickrell, G. W.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

Pillars, J.

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Ritchie, D. A.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Rochford, C.

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

Rosenberg, D.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Rowe, M. A.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Sanchez, C. A.

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

Sandvik, P.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Shahedipour-Sandvik, F.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Shao, Z. G.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Shaw, G. A.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Shields, A. J.

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

Siegal, M. P.

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Siegel, A. M.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Soloviev, S.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Stephenson, C. A.

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

Su, M. Y.

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

Suvarna, P.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Takeuchi, T.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

Tungare, M.

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

Ushida, S.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

Vert, A.

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Wang, Y. D.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100, 054306 (2006).
[Crossref]

Yamamoto, Y.

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

Yelton, W. G.

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

Yoshikawa, A.

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Zang, K. Y.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100, 054306 (2006).
[Crossref]

Zhang, R.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Zheng, Y. D.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

Appl. Phys. Lett. (4)

M. A. Rowe, E. J. Gansen, M. Greene, R. H. Hadfield, T. E. Harvey, M. Y. Su, S. W. Nam, R. P. Mirin, and D. Rosenberg, “Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency,” Appl. Phys. Lett. 89, 253505 (2006).
[Crossref]

A. J. Shields, M. P. O’Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, “Detection of single photons using a field-effect transistor gated by a layer of quantum dots,” Appl. Phys. Lett. 76, 3673–3675 (2000).
[Crossref]

S. Muhtadi, S. Hwang, A. Coleman, F. Asif, A. Lunev, M. V. S. Chandrashekhar, and A. Khan, “Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity,” Appl. Phys. Lett. 110, 171104 (2017).
[Crossref]

A. Yoshikawa, S. Ushida, K. Nagase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector,” Appl. Phys. Lett. 111, 191103 (2017).
[Crossref]

ECS J. Solid State Sci. Technol. (3)

B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate, “Planar ohmic contacts to Al0.45Ga0.55N/Al0.3Ga0.7N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3067–S3071 (2017).
[Crossref]

A. G. Baca, B. A. Klein, A. A. Allerman, A. M. Armstrong, E. A. Douglas, C. A. Stephenson, T. R. Fortune, and R. J. Kaplar, “Al0.85Ga0.15N/Al0.70Ga0.30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature,” ECS J. Solid State Sci. Technol. 6, Q161–Q165 (2017).
[Crossref]

A. G. Baca, A. M. Armstrong, A. A. Allerman, B. A. Klein, E. A. Douglas, C. A. Sanchez, and T. R. Fortune, “High temperature operation of Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors,” ECS J. Solid State Sci. Technol. 6, S3010–S3013 (2017).
[Crossref]

IEEE Electron Device Lett. (1)

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li, and Z. H. Li, “High-gain AlGaN solar-blind avalanche photodiodes,” IEEE Electron Device Lett. 35, 372–374 (2014).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

E. J. Gansen, M. A. Rowe, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Operational analysis of a quantum dot optically gated field-effect transistor as a single-photon detector,” IEEE J. Sel. Top. Quantum Electron. 13, 967–977 (2007).
[Crossref]

J. Appl. Phys. (2)

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100, 054306 (2006).
[Crossref]

A. M. Armstrong, B. Klein, A. A. Allerman, E. A. Douglas, A. G. Baca, M. H. Crawford, G. W. Pickrell, and C. A. Sanchez, “Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors,” J. Appl. Phys. 123, 114502 (2018).
[Crossref]

J. Electrochem. Soc. (1)

S. J. Limmer, W. G. Yelton, M. P. Siegal, J. L. Lensch-Falk, J. Pillars, and D. L. Medlin, “Electrochemical deposition of Bi2(Te,Se)3 nanowire arrays on Si,” J. Electrochem. Soc. 159, D235–D239 (2012).
[Crossref]

J. Electron. Mater. (1)

P. Suvarna, M. Tungare, J. M. Leathersich, P. Agnihotri, F. Shahedipour-Sandvik, L. D. Bell, and S. Nikzad, “Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates,” J. Electron. Mater. 42, 854–858 (2013).
[Crossref]

J. Mater. Res. (1)

C. Rochford, S. J. Limmer, S. W. Howell, T. E. Beechem, and M. P. Siegal, “Planarized arrays of aligned, untangled multiwall carbon nanotubes with ohmic back contacts,” J. Mater. Res. 30, 315–322 (2015).
[Crossref]

J. Vac. Sci. Technol. B (1)

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, “Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection,” J. Vac. Sci. Technol. B 26, 1174–1177 (2008).
[Crossref]

Jpn. J. Appl. Phys. (3)

M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor photosensors,” Jpn. J. Appl. Phys. 52, 08JF02 (2013).
[Crossref]

A. Yoshikawa, Y. Yamamoto, T. Murase, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors,” Jpn. J. Appl. Phys. 55, 05FJ04 (2016).
[Crossref]

Y. Yamamoto, A. Yoshikawa, T. Kusafuka, T. Okumura, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals,” Jpn. J. Appl. Phys. 55, 05FJ07 (2016).
[Crossref]

Phys. Status Solidi C (1)

M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki, “High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate,” Phys. Status Solidi C 6, S972–S975 (2009).
[Crossref]

Proc. SPIE (1)

G. A. Shaw, A. M. Siegel, J. Model, A. Geboff, S. Soloviev, A. Vert, and P. Sandvik, “Deep UV photon-counting detectors and applications,” Proc. SPIE 7320, 732001 (2009).
[Crossref]

Small (1)

K. Bergemann and F. Léonard, “Room-temperature phototransistor with negative photoresponsivity of 108  A W−1 using fullerene-sensitized aligned carbon nanotubes,” Small 14, 1802806 (2018).
[Crossref]

Other (1)

G. Snider, “1D Poisson,” https://www3.nd.edu/~gsnider/ .

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Figures (11)

Fig. 1.
Fig. 1. (a) Device A heterostructure and energy band diagram in the pinch-off condition (b) at the onset of illumination and (c) under steady-state illumination. (d) Device B heterostructure and energy band diagram in the pinch-off condition (e) at the onset of illumination and (f) under steady-state illumination. (g) Device C heterostructure and energy band diagram in the pinch-off condition (h) at the onset of illumination and (i) under steady-state illumination.
Fig. 2.
Fig. 2. AFM image of GaN nanodots after size reduction and prior to AlGaN barrier overgrowth. The image size is 2    μm × 2    μm .
Fig. 3.
Fig. 3. I DS V DS data for Device A showing good transistor action with inclusion of GaN nanodots.
Fig. 4.
Fig. 4. Transfer characteristics for Device A in the dark and under UV illumination. The device shows good pinch-off in the dark and switches to an on-state under UV illumination.
Fig. 5.
Fig. 5. Transient response under 4.70 eV illumination and use of an electrical fill pulse to rapidly reset the detector.
Fig. 6.
Fig. 6. Responsivity spectrum for a 40 ms rise time for Device A at different optical intensities. Inset shows the same data on a linear scale.
Fig. 7.
Fig. 7. Transfer characteristics for Device B in the dark and under UV illumination. Despite the incomplete pinch-off, the device exhibited large Δ I DS .
Fig. 8.
Fig. 8. Responsivity spectrum for a 40 ms rise time for Device B.
Fig. 9.
Fig. 9. Responsivity and bandwidth under 4.35 eV illumination for Device B under different optical intensities.
Fig. 10.
Fig. 10. Transfer characteristics for Device C in the dark and under UV illumination.
Fig. 11.
Fig. 11. Responsivity for Device C for a 40 ms rise time.

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