Abstract

We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can be improved by exploiting the higher conductivity of n-AlGaN layers as well as a lower resistance of n-contacts. UVC LEDs with AlGaN:Mg/AlGaN:Si tunnel junctions exhibiting single peak emission at 268 nm have been realized, demonstrating effective carrier injection into the AlGaN multiple quantum well active region. The incorporation of a low band gap interlayer enables effective tunneling and strong voltage reduction. Therefore, the interlayer thickness is systematically varied. Tunnel heterojunction LEDs with an 8 nm thick GaN interlayer exhibit continuous-wave emission powers >3  mW near thermal rollover. External quantum efficiencies of 1.4% at a DC current of 5 mA and operating voltages of 20 V are measured on-wafer. Laterally homogeneous emission is demonstrated by UV-sensitive electroluminescence microscopy images. The complete UVC LED heterostructure is grown in a single epitaxy process including in situ activation of the magnesium acceptors.

© 2019 Chinese Laser Press

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References

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    [Crossref]
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    [Crossref]
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  8. S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
    [Crossref]
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    [Crossref]
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    [Crossref]
  16. M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
    [Crossref]
  17. Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
    [Crossref]
  18. Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
    [Crossref]
  19. Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
    [Crossref]
  20. Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
    [Crossref]
  21. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
    [Crossref]
  22. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
    [Crossref]
  23. K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
    [Crossref]
  24. J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
    [Crossref]
  25. C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
    [Crossref]
  26. M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
    [Crossref]

2018 (4)

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

2017 (4)

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

2016 (6)

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

2015 (4)

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

2013 (1)

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

2007 (1)

M. J. Grundmann and U. K. Mishra, “Multi-color light emitting diode using polarization-induced tunnel junctions,” Phys. Status Solidi C 4, 2830–2833 (2007).
[Crossref]

2001 (3)

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

1958 (1)

L. Esaki, “New phenomenon in narrow germanium p-n junctions,” Phys. Rev. 109, 603–604 (1958).
[Crossref]

Akasaki, I.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Akyol, F.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Albrecht, M.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

Alhassan, A. I.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Allerman, A.

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Allerman, A. A.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Armstrong, A.

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Armstrong, A. M.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Bajaj, S.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Bellmann, K.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Bläsing, J.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Blomqvist, M.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Calderon, G.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Callsen, G.

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Castiglia, A.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

Chang, Y. l.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Cook, L. W.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Corzine, S.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Dadgar, A.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

DenBaars, S. P.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Diagne, M.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Djavid, M.

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

Duelk, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

Einfeldt, S.

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Enslin, J.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

Esaki, L.

L. Esaki, “New phenomenon in narrow germanium p-n junctions,” Phys. Rev. 109, 603–604 (1958).
[Crossref]

Feduniewicz-Zmuda, A.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Figiel, J. J.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Grandjean, N.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]

Grundmann, M. J.

M. J. Grundmann and U. K. Mishra, “Multi-color light emitting diode using polarization-induced tunnel junctions,” Phys. Status Solidi C 4, 2830–2833 (2007).
[Crossref]

Guttmann, M.

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

Hagedorn, S.

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

Han, J.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Hasnain, G.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

He, Y.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Hirayama, H.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Hoffmann, A.

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Hoffmann, M. P.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Hueschen, M.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Hwang, D.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Hwang, J.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Iwaya, M.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Jamal-Eddine, Z.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Jang, H.-J.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

Jeon, S.-R.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

Johnson, J. M.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Kaga, M.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Kamiyama, S.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Knauer, A.

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Kneissl, M.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Kocot, C.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Krames, M.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Krames, M. R.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Krishnamoorthy, S.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Kueller, V.

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Kuhn, C.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Kuwano, Y.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Lefforge, D.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Lehmann, M.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Lobo-Ploch, N.

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

Makarona, E.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Malinverni, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]

Markurt, T.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

Martens, M.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Martin, D.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]

Mehnke, F.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

Mi, Z.

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

Mino, T.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Mishra, U. K.

M. J. Grundmann and U. K. Mishra, “Multi-color light emitting diode using polarization-induced tunnel junctions,” Phys. Status Solidi C 4, 2830–2833 (2007).
[Crossref]

Mogilatenko, A.

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

Morita, T.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Moseley, M. W.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Mughal, A. J.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Muziol, G.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Nakamura, S.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Narodovitch, M.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Neugebauer, S.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Nguyen, H. P. T.

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

Niermann, T.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Noguchi, N.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Nowakowska-Szkudlarek, A.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Nowakowski-Szkudlarek, K.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Nurmikko, A. V.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Oh, S. H.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Perlin, P.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Ra, Y.-H.

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

Rajan, S.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

S. Rajan and T. Takeuchi, “III-nitride tunnel junctions and their applications,” in III-Nitride Based Light Emitting Diodes and Applications (Springer, 2017), pp. 209–238.

Rass, J.

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Rossetti, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

Sadaf, S. M.

S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]

Sakai, J.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Sawicka, M.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Schneider, J. R. P.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Schulz, T.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

Siekacz, M.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Simoneit, T.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Skierbiszewski, C.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Song, Y.-H.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

Speck, J. S.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Stockman, S. A.

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

Strittmatter, A.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Sulmoni, L.

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

Susilo, N.

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

Tabataba-Vakili, F.

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Takano, T.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Takeuchi, T.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]

S. Rajan and T. Takeuchi, “III-nitride tunnel junctions and their applications,” in III-Nitride Based Light Emitting Diodes and Applications (Springer, 2017), pp. 209–238.

Tardy, C.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

Tsubaki, K.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

Turski, H.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

Velez, C.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

Waldrip, K. E.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Wernicke, T.

C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]

Weyers, M.

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]

Witte, H.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]

Wong, M. S.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Wu, F.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Yagi, K.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Yamashita, K.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]

Yang, G. M.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

Yonkee, B. P.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Young, E. C.

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

Zeimer, U.

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]

Zhang, Y.

Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290  nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]

Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]

Zhou, H.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]

Ziffer, E.

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]

Appl. Phys. Express (5)

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]

E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]

Appl. Phys. Lett. (8)

S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]

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Phys. Status Solidi RRL (1)

K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
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Other (2)

M. Kneissl and J. Rass, eds., III-Nitride Ultraviolet Emitters: Technology and Applications (Springer, 2016).

S. Rajan and T. Takeuchi, “III-nitride tunnel junctions and their applications,” in III-Nitride Based Light Emitting Diodes and Applications (Springer, 2017), pp. 209–238.

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Figures (5)

Fig. 1.
Fig. 1. (a) Schematic of a UVC LED with a tunnel heterojunction in reverse bias configuration for hole injection. (b) Equilibrium band structure diagram (0 V bias voltage) of a TJ-LED with 8 nm GaN:Si interlayer.
Fig. 2.
Fig. 2. (a) Normalized emission spectra of fully transparent MOVPE-grown TJ-LEDs with GaN interlayer (heterojunction) and without interlayer (homojunction) emitting at 268 nm. The inset shows microscope images of the heterojunction TJ-LED in (b) the “off” state and (c) the “on” state of the device.
Fig. 3.
Fig. 3. Microscope images taken by a UV-sensitive camera for TJ-LEDs at a DC current of 5 mA. (a) A square mesa geometry with a top n-contact at the perimeter and (b) a finger-shaped mesa geometry with central stripe top n-contact are measured from the top. The electric contact is provided by the small metal electrodes only. The entire mesa area of the top AlGaN:Si semiconductor is homogeneously emitting with a slight enhancement under the stripe contact.
Fig. 4.
Fig. 4. Experimental LIV curves for tunnel heterojunction LEDs with emitting area of 0.15  mm2 featuring 1, 4, and 8 nm thick interlayers as a function of the injected current under cw operation. The black curves represent the tunnel homojunction LED.
Fig. 5.
Fig. 5. Operation voltage and external quantum efficiency in bottom emission configuration of UVC LEDs with tunnel junction measured at a cw current of 5 mA as a function of the interlayer thickness.