Abstract

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately, enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.

© 2019 Chinese Laser Press

Full Article  |  PDF Article
OSA Recommended Articles
On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Yi Li, Meiyu Wang, Youhua Zhu, and Zi-Hui Zhang
Opt. Express 27(12) A620-A628 (2019)

Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes

Zi-Hui Zhang, Kangkai Tian, Chunshuang Chu, Mengqian Fang, Yonghui Zhang, Wengang Bi, and Hao-Chung Kuo
Opt. Express 26(14) 17977-17987 (2018)

On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

Zi-Hui Zhang, Luping Li, Yonghui Zhang, Fujun Xu, Qiang Shi, Bo Shen, and Wengang Bi
Opt. Express 25(14) 16550-16559 (2017)

References

  • View by:
  • |
  • |
  • |

  1. Y. Nagasawa and A. Hirano, “A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire,” Appl. Sci. 8, 1264 (2018).
    [Crossref]
  2. D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photon. 10, 43–110 (2018).
    [Crossref]
  3. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
    [Crossref]
  4. H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
    [Crossref]
  5. Y.-H. Liang and E. Towe, “Progress in efficient doping of high aluminum-containing group III-nitrides,” Appl. Phys. Rev. 5, 011107 (2018).
    [Crossref]
  6. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
    [Crossref]
  7. Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
    [Crossref]
  8. Z.-H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25, 16550–16559 (2017).
    [Crossref]
  9. K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
    [Crossref]
  10. H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
    [Crossref]
  11. J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
    [Crossref]
  12. L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
    [Crossref]
  13. S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
    [Crossref]
  14. Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
    [Crossref]
  15. J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
    [Crossref]
  16. Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
    [Crossref]
  17. M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
    [Crossref]
  18. Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
    [Crossref]
  19. L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
    [Crossref]
  20. Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
    [Crossref]
  21. Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
    [Crossref]
  22. Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
    [Crossref]
  23. Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
    [Crossref]
  24. J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
    [Crossref]
  25. V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
    [Crossref]
  26. H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
    [Crossref]
  27. Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
    [Crossref]
  28. Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
    [Crossref]

2018 (6)

Y. Nagasawa and A. Hirano, “A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire,” Appl. Sci. 8, 1264 (2018).
[Crossref]

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photon. 10, 43–110 (2018).
[Crossref]

Y.-H. Liang and E. Towe, “Progress in efficient doping of high aluminum-containing group III-nitrides,” Appl. Phys. Rev. 5, 011107 (2018).
[Crossref]

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

2017 (3)

2016 (4)

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

2015 (1)

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

2014 (5)

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

2013 (1)

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

2012 (1)

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

2010 (3)

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
[Crossref]

2008 (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

2004 (1)

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

2003 (1)

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

2002 (1)

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
[Crossref]

Adesida, I.

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

Akyol, F.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Allerman, A. A.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Ambacher, O.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
[Crossref]

Armstrong, A. M.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Balakrishnan, K.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Bernardini, F.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
[Crossref]

Bi, W.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25, 16550–16559 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Chang, H.-T.

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Chang, J.-Y.

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Chen, F.-M.

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Chen, S.-W. H.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Chiu, C. H.

Choi, H.-S.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Choi, I.-G.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Chu, C.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Demir, H. V.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Detchprohm, T.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

Ding, G. G.

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

Ding, K.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Duan, R. F.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Dupuis, R. D.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Fang, M.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Fiorentini, V.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
[Crossref]

Fischer, A. M.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

Fujikawa, S.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Geng, C.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Guo, C. L.

Hasanov, N.

Hirano, A.

Y. Nagasawa and A. Hirano, “A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire,” Appl. Sci. 8, 1264 (2018).
[Crossref]

Hirayama, H.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Islam, S. M.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

Jena, D.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Ji, Y.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Jiang, H. X.

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Jiang, K.

Jiang, Y.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Ju, Z.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Kamata, N.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Kandaswamy, P. K.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

Kao, T.-T.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Katona, T.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Khan, A.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Kim, H. K.

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

Kim, K. H.

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Kim, T. G.

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Krishnamoorthy, S.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Kuo, H.-C.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Kuo, Y.-K.

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Kyaw, Z.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Lau, K. M.

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

Lee, T. H.

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Li, D. B.

Li, H.

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Li, J.

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Li, J. M.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Li, L.

Li, S.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Li, X.-H.

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Li, Y. Y.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Lian, C.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Liang, Y.-H.

Y.-H. Liang and E. Towe, “Progress in efficient doping of high aluminum-containing group III-nitrides,” Appl. Phys. Rev. 5, 011107 (2018).
[Crossref]

Lin, J. Y.

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Liu, W.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Liu, Y.-S.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Lochner, Z.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Lu, L.

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

Lu, S.

Lu, T. C.

Maeda, N.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Minor, P.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Moseley, M. W.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Nagasawa, Y.

Y. Nagasawa and A. Hirano, “A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire,” Appl. Sci. 8, 1264 (2018).
[Crossref]

Nakarmi, M. L.

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Nam, K. B.

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Piprek, J.

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
[Crossref]

Protasenko, V.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Rajan, S.

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Ryou, J.-H.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

Ryu, H.-Y.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Salamo, G. J.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Satter, M. M.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Seong, T. Y.

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

Shen, B.

Shen, S.-C.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Shi, Q.

Shih, Y.-H.

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

Shim, J.-I.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Simon, J.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Son, K. R.

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Sun, B. J.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Sun, Q.

Sun, X. J.

Sun, X. W.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Tan, S. T.

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Tang, C. W.

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

Tian, K.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Towe, E.

Y.-H. Liang and E. Towe, “Progress in efficient doping of high aluminum-containing group III-nitrides,” Appl. Phys. Rev. 5, 011107 (2018).
[Crossref]

Toyoda, S.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Verma, J.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

Wang, J. X.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Wang, L.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Wang, S.-W.

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Wang, Z.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Ware, M.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Wei, T. B.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Wei, Y. O.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

Wu, J.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Wu, Z.

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Xing, H.

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Xu, F.

Xu, F. J.

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

Xu, S.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Yan, J. C.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Yoder, P. D.

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Zeng, Y. P.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Zhang, L.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

Zhang, X.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Zhang, Y.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25, 16550–16559 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Zhang, Z.-H.

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Z.-H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25, 16550–16559 (2017).
[Crossref]

Z.-H. Zhang, C. Chu, C. H. Chiu, T. C. Lu, L. Li, Y. Zhang, K. Tian, M. Fang, Q. Sun, H.-C. Kuo, and W. Bi, “UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections,” Opt. Lett. 42, 4533–4536 (2017).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22, A779–A789 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

Zhu, B.

ACS Photon. (1)

Z.-H. Zhang, S.-W. H. Chen, Y. Zhang, L. Li, S.-W. Wang, K. Tian, C. Chu, M. Fang, H.-C. Kuo, and W. Bi, “Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes,” ACS Photon. 4, 1846–1850 (2017).
[Crossref]

Adv. Opt. Photon. (1)

Appl. Phys. Express (1)

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Appl. Phys. Lett. (9)

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104, 251108 (2014).
[Crossref]

H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” Appl. Phys. Lett. 84, 1710–1712 (2004).
[Crossref]

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80, 1204–1206 (2002).
[Crossref]

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in AlN probed by deep ultraviolet photoluminescence,” Appl. Phys. Lett. 83, 878–880 (2003).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108, 133502 (2016).
[Crossref]

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97, 062103 (2010).
[Crossref]

S. Li, M. Ware, J. Wu, P. Minor, Z. Wang, Z. Wu, Y. Jiang, and G. J. Salamo, “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN,” Appl. Phys. Lett. 101, 122103 (2012).
[Crossref]

Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design of p-type cladding layers for tunnel-injected UVA light emitting diodes,” Appl. Phys. Lett. 109, 191105 (2016).
[Crossref]

J. Verma, S. M. Islam, V. Protasenko, P. K. Kandaswamy, H. Xing, and D. Jena, “Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures,” Appl. Phys. Lett. 104, 021105 (2014).
[Crossref]

Appl. Phys. Rev. (1)

Y.-H. Liang and E. Towe, “Progress in efficient doping of high aluminum-containing group III-nitrides,” Appl. Phys. Rev. 5, 011107 (2018).
[Crossref]

Appl. Sci. (1)

Y. Nagasawa and A. Hirano, “A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire,” Appl. Sci. 8, 1264 (2018).
[Crossref]

IEEE J. Quantum Electron. (2)

M. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport,” IEEE J. Quantum Electron. 50, 166–173 (2014).
[Crossref]

Y.-K. Kuo, J.-Y. Chang, F.-M. Chen, Y.-H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN Deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52, 3300105 (2016).
[Crossref]

IEEE Photon. J. (1)

Z.-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride-based light-emitting diodes,” IEEE Photon. J. 8, 8200307 (2016).
[Crossref]

IEEE Photon. Technol. Lett. (1)

Y.-S. Liu, T.-T. Kao, M. M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, and Y. O. Wei, “Inverse-tapered p-waveguide for vertical hole transport in high-[Al] AlGaN emitters,” IEEE Photon. Technol. Lett. 27, 1768–1771 (2015).
[Crossref]

Jpn. J. Appl. Phys. (1)

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Mater. Des. (1)

K. H. Kim, T. H. Lee, K. R. Son, and T. G. Kim, “Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects,” Mater. Des. 153, 94–103 (2018).
[Crossref]

Nanoscale Res. Lett. (1)

Z.-H. Zhang, S.-W. H. Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, “Nearly efficiency-droop-free algan-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency,” Nanoscale Res. Lett. 13, 122 (2018).
[Crossref]

Nat. Photonics (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Opt. Express (2)

Opt. Lett. (1)

Phys. Status Solidi A (1)

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi A 207, 2217–2225 (2010).
[Crossref]

Science (1)

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Semicond. Sci. Technol. (1)

L. Lu, G. G. Ding, Y. Zhang, and F. J. Xu, “Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer,” Semicond. Sci. Technol. 33, 035008 (2018).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1.
Fig. 1. Schematic energy band diagrams for (a) LED A and (b) LED B. Epz+sp and Eex denote the polarization induced electric field and the electric field that is generated by the external bias, respectively. ΔEv1 and ΔEv2 present the energy barriers/valence band offsets at the p-EBL/p-AlGaN and the last quantum barrier/p-EBL interfaces, respectively. 0lE·dx reflects the energy that the holes obtain when transporting through the p-EBL. E and l mean the coupled electric field and the thickness for the p-EBL, respectively. Besides the labeled polarization induced interface charges, the polarization induced bulk charges are also symbolized in the p-EBL for LED B.
Fig. 2.
Fig. 2. (a) Measured current–voltage characteristics, (b) measured EQE and optical power density in terms of the injection current, where the optical power density is also numerically calculated, and (c) measured EL spectra with the intensity normalized to one for LEDs A and B. Calculated optical power for LEDs R1 and R2 with the 40 nm thick p-Al0.60Ga0.40N EBL and the 40 nm thick p-Al0.70Ga0.30N EBL, respectively, can be found in Appendix A.
Fig. 3.
Fig. 3. Numerically computed (a) hole concentration profiles in the MQWs, (b) electron concentration profiles in the last three quantum wells and the p-type hole injection layers, and (c) radiative recombination rate profiles in the MQWs for LEDs A and B, respectively. The data are calculated at the current density of 50  A/cm2. Calculated hole concentration, electron concentration, and radiative recombination rate for LEDs R1 and R2 with the 40 nm thick p-Al0.60Ga0.40N EBL and the 40 nm thick p-Al0.70Ga0.30N EBL, respectively, can be found in Appendix A.
Fig. 4.
Fig. 4. Calculated energy band profiles of the p-EBLs and the p-type hole injection layers for (a) LED A and (b) LED B, and (c) calculated electric field profiles in the p-EBLs for LEDs A and B. The data are calculated at the current density of 50  A/cm2. Calculated energy bands for LEDs R1 and R2 with the 40 nm thick p-Al0.60Ga0.40N EBL and the 40 nm thick p-Al0.70Ga0.30N EBL, respectively, can be found in Appendix A.
Fig. 5.
Fig. 5. Numerically calculated optical power density for LEDs A, B, R1, and R2. LEDs R1 and R2 have a 40 nm thick p-Al0.60Ga0.40N EBL and a 40 nm thick p-Al0.70Ga0.30N EBL, respectively.
Fig. 6.
Fig. 6. Numerically calculated (a) hole concentration profiles in the MQWs, (b) electron concentration profiles in the MQWs and the p-type layers, and (c) radiative recombination rate across the MQW region for LEDs A, B, R1, and R2. For better resolution, the position for the hole concentration and the radiative recombination rate of LEDs B, R1, and R2 are purposely shifted by 0.002, 0.004, and 0.006 μm with reference to LED A. The data are calculated at the current density of 50  A/cm2.
Fig. 7.
Fig. 7. Calculated energy band profiles of the p-EBLs and the p-type hole injection layers for (a) LED A, (b) LED B, (c) LED R1, and (d) LED R2. EC, EV, Efe, and Efh denote the conduction band, the valence band, and the quasi-Fermi levels for electrons and holes, respectively. The data are calculated at the current density of 50  A/cm2.

Metrics