Abstract

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMDs) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light absorbers and emitters due to their close proximity in the lattice constants. The surface properties of a polar semiconductor such as GaN are dominated by interface phonons, and thus the optical properties of the vertical heterostructure are influenced by the coupling of these carriers with phonons. The activation of different Raman modes in the heterostructure caused by the coupling between interfacial phonons and optically generated carriers in a monolayer MoS2–GaN (0001) heterostructure is observed. Different excitonic states in MoS2 are close to the interband energy state of intraband defect state of GaN. Density functional theory (DFT) calculations are performed to determine the band alignment of the interface and revealed a type-I heterostructure. The close proximity of the energy levels and the excitonic states in the semiconductors and the coupling of the electronic states with phonons result in the modification of carrier relaxation rates. Modulation of the excitonic absorption states in MoS2 is measured by transient optical pump-probe spectroscopy and the change in emission properties of both semiconductors is measured by steady-state photoluminescence (PL) emission spectroscopy. There is significant red-shift of the C excitonic band and faster dephasing of carriers in MoS2. However, optical excitation at energy higher than the bandgap of both semiconductors slows down the dephasing of carriers and energy exchange at the interface. Enhanced and blue-shifted PL emission is observed in MoS2. GaN band-edge emission is reduced in intensity at room temperature due to increased phonon-induced scattering of carriers in the GaN layer. Our results demonstrate the relevance of interface coupling between the semiconductors for the development of optical and electronic applications.

© 2019 Chinese Laser Press

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  1. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
    [Crossref]
  2. J. Joh and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,” in 2009 Reliability of Compound Semiconductors Digest (2009), pp. 3–6.
  3. N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
    [Crossref]
  4. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
    [Crossref]
  5. W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
    [Crossref]
  6. Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
    [Crossref]
  7. P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
    [Crossref]
  8. A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
    [Crossref]
  9. M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
    [Crossref]
  10. Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
    [Crossref]
  11. H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
    [Crossref]
  12. M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
    [Crossref]
  13. B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
    [Crossref]
  14. R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
    [Crossref]
  15. J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
    [Crossref]
  16. Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
    [Crossref]
  17. D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
    [Crossref]
  18. T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
    [Crossref]
  19. Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
    [Crossref]
  20. M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
    [Crossref]
  21. C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
    [Crossref]
  22. Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
    [Crossref]
  23. L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
    [Crossref]
  24. P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
    [Crossref]
  25. P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
    [Crossref]
  26. L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
    [Crossref]
  27. G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Phys. Rev. B 59, 1758–1775 (1999).
    [Crossref]
  28. A. D. Corso, “Pseudopotentials periodic table: from H to Pu,” Comput. Mater. Sci. 95, 337–350 (2014).
    [Crossref]
  29. S. Grimme, “Semiempirical GGA-type density functional constructed with a long-range dispersion correction,” J. Comput. Chem. 27, 1787–1799 (2006).
    [Crossref]
  30. J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
    [Crossref]
  31. E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
    [Crossref]
  32. J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
    [Crossref]
  33. J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
    [Crossref]
  34. M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
    [Crossref]
  35. I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
    [Crossref]
  36. H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
    [Crossref]
  37. V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
    [Crossref]
  38. K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
    [Crossref]
  39. H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
    [Crossref]
  40. S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
    [Crossref]
  41. J. M. Chen and C. S. Wang, “Second order Raman spectrum of MoS2,” Solid State Commun. 14, 857–860 (1974).
    [Crossref]
  42. F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
    [Crossref]
  43. L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
    [Crossref]
  44. R. Gillen and J. Maultzsch, “Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX2 and band nesting,” IEEE J. Sel. Top. Quantum Electron. 23, 219–230 (2017).
    [Crossref]
  45. D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
    [Crossref]
  46. E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
    [Crossref]
  47. S. Gökden, “The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas,” Physica E 23, 198–203 (2004).
    [Crossref]
  48. F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
    [Crossref]
  49. F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
    [Crossref]
  50. Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
    [Crossref]
  51. Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
    [Crossref]
  52. S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
    [Crossref]
  53. M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
    [Crossref]
  54. M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
    [Crossref]

2019 (6)

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

2018 (6)

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

2017 (11)

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

R. Gillen and J. Maultzsch, “Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX2 and band nesting,” IEEE J. Sel. Top. Quantum Electron. 23, 219–230 (2017).
[Crossref]

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

2016 (7)

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
[Crossref]

2015 (3)

L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
[Crossref]

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

2014 (2)

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

A. D. Corso, “Pseudopotentials periodic table: from H to Pu,” Comput. Mater. Sci. 95, 337–350 (2014).
[Crossref]

2013 (4)

E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
[Crossref]

D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
[Crossref]

A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
[Crossref]

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

2012 (1)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

2009 (2)

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

2008 (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

2006 (1)

S. Grimme, “Semiempirical GGA-type density functional constructed with a long-range dispersion correction,” J. Comput. Chem. 27, 1787–1799 (2006).
[Crossref]

2004 (1)

S. Gökden, “The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas,” Physica E 23, 198–203 (2004).
[Crossref]

2002 (1)

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

2001 (1)

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

2000 (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

1999 (1)

G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Phys. Rev. B 59, 1758–1775 (1999).
[Crossref]

1998 (1)

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

1997 (2)

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

1974 (1)

J. M. Chen and C. S. Wang, “Second order Raman spectrum of MoS2,” Solid State Commun. 14, 857–860 (1974).
[Crossref]

Agapito, L. A.

L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
[Crossref]

Ahmad, S.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Alias, M. S.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Andreussi, O.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Anjum, D. H.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Artacho, E.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Aziza, Z. B.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Babinski, A.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Bacher, G.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Baillargeat, D.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Balakrishnan, K.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Bao, Q.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Baroni, S.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Bellus, M. Z.

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

Benndorf, G.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Bera, S.

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

Bhattacharya, A.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Bilgin, I.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Birdwell, A. G.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Boes, A.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Bonini, N.

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Bozek, R.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Brandt, O.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Brault, J.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Brumme, T.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Bunau, O.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Buongiorno Nardelli, M.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
[Crossref]

Burke, R. A.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Calandra, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Cao, D.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Cao, R.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Car, R.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Carnimeo, I.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Carvalho, A.

A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
[Crossref]

Castro Neto, A. H.

A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
[Crossref]

Cavazzoni, C.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Ceballos, F.

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

Cerasoli, F. T.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Cerdá, J. I.

E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
[Crossref]

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

Ceresoli, D.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Cerullo, G.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Chabak, K. D.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Chang, Y. C.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Cheminal, A.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Chen, F.

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

Chen, J. M.

J. M. Chen and C. S. Wang, “Second order Raman spectrum of MoS2,” Solid State Commun. 14, 857–860 (1974).
[Crossref]

Chen, K. J.

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

Chen, X.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Chi, C.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Chiarotti, G. L.

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Chin, M. L.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Choi, C. K.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Choi, H.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Cococcioni, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Collin, S.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Colonna, N.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Corso, A. D.

A. D. Corso, “Pseudopotentials periodic table: from H to Pu,” Comput. Mater. Sci. 95, 337–350 (2014).
[Crossref]

Costa, M.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Crowne, F. J.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Cui, Q.

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

Curtarolo, S.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
[Crossref]

Czekalla, C.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

D’souza, F.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

da Jornada, F. H.

D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
[Crossref]

Dabo, I.

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Dai, L.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Dal Conte, S.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Dal Corso, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Dani, K. M.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Davydov, A. V.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Davydov, V. Yu.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

De Fazio, D.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

De Gennaro, R.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

de Gironcoli, S.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

del Alamo, J. A.

J. Joh and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,” in 2009 Reliability of Compound Semiconductors Digest (2009), pp. 3–6.

Delugas, P.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Derr, K.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Dhara, S.

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

DiStasio, R. A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Dorsey, D. L.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Edwin, T. H. T.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Evarestov, R. A.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Fan, D.-Y.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Fang, X.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Fang, Z.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Feng, R.

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Ferrari, A. C.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Ferretti, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Filippidis, L.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Flipse, C. F. J.

E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
[Crossref]

Floris, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Fornari, M.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Fratesi, G.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Fu, L.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Fugallo, G.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Gale, J. D.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

García, A.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Gebauer, R.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Gerstmann, U.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Giannozzi, P.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

Gillen, R.

R. Gillen and J. Maultzsch, “Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX2 and band nesting,” IEEE J. Sel. Top. Quantum Electron. 23, 219–230 (2017).
[Crossref]

Giustino, F.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Glavin, N. R.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Gogneau, N.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Gökden, S.

S. Gökden, “The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas,” Physica E 23, 198–203 (2004).
[Crossref]

Golasa, K.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Goncharuk, I. N.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Gorni, T.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Grahn, H. T.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Graul, J.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Grimme, S.

S. Grimme, “Semiempirical GGA-type density functional constructed with a long-range dispersion correction,” J. Comput. Chem. 27, 1787–1799 (2006).
[Crossref]

Grinblat, G.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Grotta, C.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Grundmann, M.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Grzeszczyk, M.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Guo, Z.-N.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Gupta, G.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Gupta, P.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Gupta, S.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Han, G. H.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

He, J.

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Hedhili, M. N.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Heller, E. R.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Henck, H.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Hennighausen, Z.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

Herzing, A.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Heyer, F.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Hinrichsen, T. F.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Hochmuth, H.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Hoffmann, A.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Huang, Y. L.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Hutten, U.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Huynh, U.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

In, C.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Ivanov, T. G.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Janjua, B.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Jena, D.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Ji, X.

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

Jia, J.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Jiang, F.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Joh, J.

J. Joh and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,” in 2009 Reliability of Compound Semiconductors Digest (2009), pp. 3–6.

Joubert, D.

G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Phys. Rev. B 59, 1758–1775 (1999).
[Crossref]

Joyce, H. J.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Junquera, J.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Kaczmarczyk, G.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Kang, Y.

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Kar, S.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Karna, S.

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Katona, T.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Kawamura, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Khan, A.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Kim, B. G.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Kim, H.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Kim, J.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Kim, M. S.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Kitaev, Y. E.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Ko, H.-Y.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Kokalj, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Kolmakov, A.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Krasinski, J. S.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Kresse, G.

G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Phys. Rev. B 59, 1758–1775 (1999).
[Crossref]

Küçükbenli, E.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Kümmell, T.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Kwon, Y. H.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Lange, M.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Laskar, M. R.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Lazzeri, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Lee, J.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Lee, Y. S.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Leem, J. Y.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Leszczynski, P.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Li, B.

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

Li, H.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Li, J.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Li, J.-Q.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Li, L.-J.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Li, P.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Li, X. B.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Li, Y.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Li, Z.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Liang, P.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Lim, G. N.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Litvinchuk, A. P.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Liu, B.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Liu, F.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Liu, J.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Liu, Y.

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Liu, Z.

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Liyanage, L.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Lombardo, A.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Lorenz, M.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Louie, S. G.

D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
[Crossref]

Lu, J.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Lu, Y.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Lv, Q.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Mahat, M.

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Maier, S. A.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Man, M. K.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Manzoni, C.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Marini, A.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Marsili, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Maruyama, B.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Marzari, N.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Mattevi, C.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Maultzsch, J.

R. Gillen and J. Maultzsch, “Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX2 and band nesting,” IEEE J. Sel. Top. Quantum Electron. 23, 219–230 (2017).
[Crossref]

Mauri, F.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Mazzoni, A.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Mirgorodsky, A. P.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Mishra, P.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Mitchell, A.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Mo, C.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Moazzezi, M.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

Mohite, A. D.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Moore, E. A.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Narayan, A.

J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
[Crossref]

Naylor, C. H.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Neogi, A.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Neubieser, R.-M.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Neupane, M. R.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Ng, T. K.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Nguyen, H.-V.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Nguyen, N. L.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Ni, L.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Ni, N.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

O’Regan, T. P.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Oehler, F.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Olivier, A.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Ooi, B. S.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Ordejón, P.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Orlova, T.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Otero-de-la-Roza, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Paduano, Q.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Palczynski, P.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Parida, S.

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

Park, G. H.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Park, J.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Park, J. H.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Patsha, A.

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

Paulatto, L.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Pesci, F. M.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Picozzi, S.

J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
[Crossref]

Pierucci, D.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Pogna, E. A. A.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Poncé, S.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Potemski, M.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Poudel, Y.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

Protasenko, V.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Prusnick, T. A.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Qian, Q.

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

Qiu, D. Y.

D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
[Crossref]

Quitsch, W.

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

Rahman, A. A.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Ran, G.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Rao, A.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Reale, F.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Ribeiro, R. M.

A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
[Crossref]

Robinson, J. A.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Rocca, D.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Rossen, E. T. R.

E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
[Crossref]

Rostovtsev, Y.

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Rouvimov, S.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Roy, S.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Ruzmetov, D.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Sabatini, R.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Sadhanala, A.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Salmeron, M.

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

Sánchez-Portal, D.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Sang, D. K.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Sangalli, D.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Santra, B.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Sautet, P.

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

Schlipf, M.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Seitsonen, A. P.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Semchinova, O.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Setlur, G.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Shan, H.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Sharda, K.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Sherrell, P. C.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Shi, Y.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Shivanna, R.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Shu, H.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Siegle, H.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Silly, M. G.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Sim, S.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Sirotti, F.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Slawinska, J.

J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
[Crossref]

Smirnov, A. N.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Smirnov, M. B.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Smogunov, A.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Snure, M.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Sokolikova, M. S.

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

Soler, J. M.

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

Song, J. G.

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Song, J. J.

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

Song, Z.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Subramanian, S.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Sun, W.

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

Sun, X.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Supka, A. R.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Talapatra, S.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Tan, C.-K.

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

Tang, N.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Tangi, M.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Tansu, N.

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

Tay, B. K.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Taylor, D. E.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Thamizhavel, A.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Thomas, T. H.

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

Thomsen, C.

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

Thonhauser, T.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Timrov, I.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Tour, J. M.

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Tseng, C.-C.

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Uffmann, D.

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Umari, P.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Upmanyu, M.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Van Hove, M. A.

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

Vargas, A.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Vast, N.

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Vishwanath, S.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Walker, D. E.

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Waltereit, P.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Wan, Y.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Wang, C. S.

J. M. Chen and C. S. Wang, “Second order Raman spectrum of MoS2,” Solid State Commun. 14, 857–860 (1974).
[Crossref]

Wang, D.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Wang, H.

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

Wang, H. Y.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Wang, H.-D.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Wang, J.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Wang, L.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

Wang, N.

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

Wang, T.

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

Wang, Y.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Wang, Z.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Wang, Z. M.

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Wee, A. S.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Wen, B.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Wierer, J. J.

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

Winchester, A.

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

Wu, Q.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Wu, X.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

Wysmolek, A.

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

Xiao, J.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Xiao, Q.-L.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Xing, H. G.

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

Xue, Y.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Yan, H.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Yap, C. C. R.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Ye, R.

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Ye, X. H.

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Ye, Y.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Yidirim, T.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Yoon, D.

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

Yudistira, D.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Yun, S. J.

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Zhang, H.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Zhang, J.

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Zhang, K.

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Zhang, L.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Zhang, L.-Y.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Zhang, Q.

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Zhang, S.

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Zhang, X.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Zhang, Y.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Zhang, Y.-P.

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Zhang, Z.

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

Zhao, H.

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

Zhao, M.

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Zheng, L.

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Zhou, Y.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Zhu, X.

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

Zhu, Y.

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

Zill, O.

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

Zippel, J.

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

2D Mater. (1)

D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, and J. A. Robinson, “Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN,” 2D Mater. 5, 045016 (2018).
[Crossref]

ACS Appl. Mater. Interfaces (3)

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

Z. Zhang, Q. Qian, B. Li, and K. J. Chen, “Interface engineering of monolayer MoS2/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment,” ACS Appl. Mater. Interfaces 10, 17419–17426 (2018).
[Crossref]

M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, and J. Kim, “Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films,” ACS Appl. Mater. Interfaces 8, 28809–28815 (2016).
[Crossref]

ACS Catal. (1)

F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, and C. Mattevi, “MoS2/WS2 heterojunction for photoelectrochemical water oxidation,” ACS Catal. 7, 4990–4998 (2017).
[Crossref]

ACS Nano (4)

E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, and G. Cerullo, “Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS2,” ACS Nano 10, 1182–1188 (2016).
[Crossref]

B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, and Y. Lu, “Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides,” ACS Nano 13, 5335–5343 (2019).
[Crossref]

L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, and S. Ahmad, “Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells,” ACS Nano 11, 10834–10843 (2017).
[Crossref]

I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, and S. Kar, “Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality,” ACS Nano 9, 8822–8832 (2015).
[Crossref]

ACS Photon. (3)

Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, and S. Kar, “Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons,” ACS Photon. 6, 1645–1655 (2019).
[Crossref]

M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, and A. Neogi, “Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states,” ACS Photon. 5, 614–620 (2018).
[Crossref]

Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, and F. Jiang, “Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport,” ACS Photon. 6, 130–138 (2019).
[Crossref]

Adv. Funct. Mater. (1)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Adv. Mater. (3)

Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, and Z. Fang, “Graphene quantum dots doping of MoS2 monolayers,” Adv. Mater. 27, 5235–5240 (2015).
[Crossref]

N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, and M. Snure, “Flexible gallium nitride for high-performance, strainable radio-frequency devices,” Adv. Mater. 29, 1701838 (2017).
[Crossref]

Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, and L. Dai, “Epitaxial single-layer MoS2 on GaN with enhanced valley helicity,” Adv. Mater. 30, 1703888 (2018).
[Crossref]

Adv. Opt. Mater. (1)

R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, and H. Zhang, “Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity,” Adv. Opt. Mater. 7, 1900020 (2019).
[Crossref]

Adv. Sci. (1)

Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, and Z. Fang, “Plasmonics of 2D nanomaterials: properties and applications,” Adv. Sci. 4, 1600430 (2017).
[Crossref]

Appl. Phys. Lett. (1)

M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, and H. J. Joyce, “Determination of band offsets at GaN/single-layer MoS2 heterojunction,” Appl. Phys. Lett. 109, 032104 (2016).
[Crossref]

Comput. Mater. Sci. (2)

A. D. Corso, “Pseudopotentials periodic table: from H to Pu,” Comput. Mater. Sci. 95, 337–350 (2014).
[Crossref]

M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, and H. Wang, “PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials,” Comput. Mater. Sci. 143, 462–472 (2018).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

R. Gillen and J. Maultzsch, “Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX2 and band nesting,” IEEE J. Sel. Top. Quantum Electron. 23, 219–230 (2017).
[Crossref]

J. Comput. Chem. (1)

S. Grimme, “Semiempirical GGA-type density functional constructed with a long-range dispersion correction,” J. Comput. Chem. 27, 1787–1799 (2006).
[Crossref]

J. Mater. Chem. C (1)

F. Chen, T. Wang, L. Wang, X. Ji, and Q. Zhang, “Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires,” J. Mater. Chem. C 5, 10225–10230 (2017).
[Crossref]

J. Phys. Chem. C (1)

J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, and X. Chen, “Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS2/GaN van der Waals heterostructures,” J. Phys. Chem. C 123, 3861–3867 (2019).
[Crossref]

J. Phys. Condens. Matter (3)

P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, and A. Dal Corso, “QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,” J. Phys. Condens. Matter 21, 395502 (2009).
[Crossref]

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, and S. Baroni, “Advanced capabilities for materials modelling with Quantum ESPRESSO,” J. Phys. Condens. Matter 29, 465901 (2017).
[Crossref]

J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, “The SIESTA method for ab initio order-N materials simulation,” J. Phys. Condens. Matter 14, 2745–2779 (2002).
[Crossref]

J. Phys. D (1)

S. Parida, A. Patsha, S. Bera, and S. Dhara, “Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires,” J. Phys. D 50, 275103 (2017).
[Crossref]

J. Vac. Sci. Technol. B (1)

M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, and M. Grundmann, “Temperature dependence of localization effects of excitons in ZnO/CdxZn1-xO/ZnO double heterostructures,” J. Vac. Sci. Technol. B 27, 1741–1745 (2009).
[Crossref]

Nano-Micro Lett. (1)

Y. Liu, S. Zhang, J. He, Z. M. Wang, and Z. Liu, “Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials,” Nano-Micro Lett. 11, 13 (2019).
[Crossref]

Nanoscale (1)

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8, 11681–11688 (2016).
[Crossref]

Nat. Commun. (1)

L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, and S. A. Maier, “Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,” Nat. Commun. 8, 13906 (2017).
[Crossref]

Nat. Photonics (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Nature (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406, 865–868 (2000).
[Crossref]

Phys. Rev. B (11)

H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, and F. Sirotti, “Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN (00001),” Phys. Rev. B 96, 115312 (2017).
[Crossref]

A. Carvalho, R. M. Ribeiro, and A. H. Castro Neto, “Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides,” Phys. Rev. B 88, 115205 (2013).
[Crossref]

T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, and G. Bacher, “Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch,” Phys. Rev. B 95, 081304 (2017).
[Crossref]

G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Phys. Rev. B 59, 1758–1775 (1999).
[Crossref]

C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, and Y. C. Chang, “Ultrafast carrier dynamics in a highly excited GaN epilayer,” Phys. Rev. B 63, 115315 (2001).
[Crossref]

J. I. Cerdá, M. A. Van Hove, P. Sautet, and M. Salmeron, “Efficient method for the simulation of STM images. I. Generalized Green-function formalism,” Phys. Rev. B 56, 15885–15899 (1997).
[Crossref]

E. T. R. Rossen, C. F. J. Flipse, and J. I. Cerdá, “Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data,” Phys. Rev. B 87, 235412 (2013).
[Crossref]

J. Sławińska, A. Narayan, and S. Picozzi, “Hidden spin polarization in nonmagnetic centrosymmetric BaNiS2 crystal: signatures from first principles,” Phys. Rev. B 94, 241114 (2016).
[Crossref]

H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, “Zone-boundary phonons in hexagonal and cubic GaN,” Phys. Rev. B 55, 7000–7004 (1997).
[Crossref]

V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, and H. Choi, “Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics,” Phys. Rev. B 88, 075434 (2013).
[Crossref]

Phys. Rev. Lett. (1)

D. Y. Qiu, F. H. da Jornada, and S. G. Louie, “Optical spectrum of MoS2: many-body effects and diversity of exciton states,” Phys. Rev. Lett. 111, 216805 (2013).
[Crossref]

Phys. Rev. X (1)

L. A. Agapito, S. Curtarolo, and M. Buongiorno Nardelli, “Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery,” Phys. Rev. X 5, 011006 (2015).
[Crossref]

Physica E (1)

S. Gökden, “The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas,” Physica E 23, 198–203 (2004).
[Crossref]

Sci. Rep. (2)

P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, and A. Bhattacharya, “Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth,” Sci. Rep. 6, 23708 (2016).
[Crossref]

W. Sun, C.-K. Tan, J. J. Wierer, and N. Tansu, “Ultra-broadband optical gain in III-nitride digital alloys,” Sci. Rep. 8, 3109 (2018).
[Crossref]

Solid State Commun. (2)

K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, and A. Babiński, “Resonant Raman scattering in MoS2—from bulk to monolayer,” Solid State Commun. 197, 53–56 (2014).
[Crossref]

J. M. Chen and C. S. Wang, “Second order Raman spectrum of MoS2,” Solid State Commun. 14, 857–860 (1974).
[Crossref]

Other (1)

J. Joh and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,” in 2009 Reliability of Compound Semiconductors Digest (2009), pp. 3–6.

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Figures (9)

Fig. 1.
Fig. 1. Geometry and electronic structure of the MoS2–GaN heterostructure calculated from the first principles. (a) Top view and (b) side view of the most stable interface structure (II). The unit cell is marked as a blue dashed parallelogram in panel (a). The dashed bonds in (b) denote their mostly van der Waals character. (c) Relative band edge positions of bulk GaN and four interface structures. The bands of the isolated MoS2 monolayer are not aligned, and the panel indicates only the value of the band gap. More details are provided in Fig. 7 in Appendix A. (d) Electronic structure of the interface calculated within the semi-infinite surface model and projected on MoS2 (red) and GaN states (blue).
Fig. 2.
Fig. 2. (a), (b), (c) Raman spectrum of MoS2 on quartz, GaN, and MoS2–GaN interface, respectively, showing the active Raman modes. There are various Raman modes activated at the MoS2–GaN interface. (d) Steady-state absorption spectrum of MoS2 on quartz (black) and MoS2–GaN interface (red). (e) The imaginary part of permittivity of a freestanding MoS2 layer (black) and MoS2–GaN interface (red). The insets in (d) and (e) show the corresponding spectrum of GaN.
Fig. 3.
Fig. 3. (a) Transient absorption spectrum of MoS2 showing the effect of the GaN layer and the effect of excitation energy on excitonic absorption bands. The black, red, and blue colors represent the MoS2 on quartz with 2.33 eV pump excitation, MoS2 on GaN with 2.33 eV pump excitation, and MoS2 on GaN with 3.54 eV pump excitation, respectively. The inset shows the schematics of the interface phonon coupling and the charge transfer at the interface. (b) Power dependence of the transient absorption spectrum of MoS2 on GaN with 2.33 eV. The black, red, blue, and pink colors represent the spectrum at pump fluence of 93.75, 187.5, 281, and 375  μJ/cm2, respectively.
Fig. 4.
Fig. 4. (a) Decay kinetics showing the recovery of probe absorption at the (a) A, (b) B, and (c) C excitonic bands of MoS2 showing the effect of the GaN layer and the effect of excitation energy on excitonic absorption bands. The black, red, and blue colors represent the MoS2 on quartz with 2.33 eV pump excitation, MoS2 on GaN with 2.33 eV pump excitation, and MoS2 on GaN with 3.54 eV pump excitation, respectively.
Fig. 5.
Fig. 5. PL emission spectrum. (a) The emission spectrum heterostructure showing the MoS2 and GaN emission bands. PL emission band of MoS2 on (b) quartz substrate and (c) GaN substrate. The fitted peaks represent the contribution due to trion (blue) and exciton (cyan) recombination. (d) GaN band-edge emission from the GaN (black) and MoS2–GaN (red) heterostructures. The inset shows the defect band emission after heterostructure formation. PL emission characteristics at 30 K showing the LO phonon replica of GaN in (e) GaN and (f) MoS2–GaN.
Fig. 6.
Fig. 6. Top and side views of different stacking configurations I–IV of the MoS2–GaN heterostructure. The numbers in the bottom are the energy differences with respect to the most stable structure II.
Fig. 7.
Fig. 7. Calculated energy band alignment diagram of 2D MoS2 and bulk GaN. The valence band levels are aligned with respect to the vacuum, and the valence band offset is calculated by choosing as a reference the most stable MoS2–GaN heterostructure (model II in Fig. 1).
Fig. 8.
Fig. 8. (a) AFM image of MoS2 on GaN substrate. (b) Height profile of MoS2 layer along the line in (a).
Fig. 9.
Fig. 9. Power-dependent recovery of probe absorption at the A excitonic band of MoS2 on GaN. The black, red, blue, and pink colors represent the spectrum at pump fluence of 93.75, 187.5, 281, and 375  μJ/cm2, respectively.