Abstract

This work studies Te doping effects on the direct bandgap photoluminescence (PL) of indirect GaxIn1xP alloys (0.72x0.74). The temperature-dependent PL shows that the energy difference between direct Γ valley and indirect X valleys is reduced due to the bandgap narrowing (BGN) effect, and the direct band transition gradually dominates the PL spectra as temperature increases. Carrier thermalization has been observed for Te-doped GaxIn1xP samples, as integrated PL intensity increases with increasing temperature from 175 to 300 K. The activation energy for carrier thermalization is reduced as doping concentration increases. Both BGN effect and carrier thermalization contribute to the carrier injection into the Γ valley. As a result, the direct band transition is enhanced in the Te-doped indirect GaxIn1xP alloys. Therefore, the PL intensity of the Ga0.74In0.26P sample with active doping concentration of 9×1017  cm3 is increased by five times compared with that of a nominally undoped sample. It is also found that the PL intensity is degraded significantly when the doping concentration is increased to 5×1018  cm3. From cross-section transmission electron microscopy, no large dopant clusters or other extended defects were found contributing to this degradation.

© 2017 Chinese Laser Press

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References

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  1. S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
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    [Crossref]
  3. K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
    [Crossref]
  4. Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
    [Crossref]
  5. Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
    [Crossref]
  6. R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
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  7. M. J. Mori, “Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices,” Ph.D. thesis (MIT, 2008).
  8. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
    [Crossref]
  9. G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
    [Crossref]
  10. J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15, 11272–11277 (2007).
    [Crossref]
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  12. B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
    [Crossref]
  13. K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
    [Crossref]
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    [Crossref]
  15. M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
    [Crossref]
  16. M. J. Mori and E. A. Fitzgerald, “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates,” J. Appl. Phys. 105, 013107 (2009).
    [Crossref]
  17. S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
    [Crossref]
  18. M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
    [Crossref]
  19. Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34, 149–154 (1967).
    [Crossref]
  20. L. Pavesi and M. Guzzi, “Photoluminescence of AlxGa1−xAs alloys,” J. Appl. Phys. 75, 4779 (1994).
    [Crossref]
  21. X. Sun, J. Liu, L. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95, 011911 (2009).
    [Crossref]
  22. S. C. Jain and D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid State Electron. 34, 453–465 (1991).
    [Crossref]
  23. C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
    [Crossref]
  24. T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
    [Crossref]
  25. H. Shibata, “Negative thermal quenching curves in photoluminescence of solids,” Jpn. J. Appl. Phys. 37, 550–553 (1998).
    [Crossref]
  26. R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
    [Crossref]
  27. Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
    [Crossref]
  28. A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
    [Crossref]
  29. G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
    [Crossref]

2016 (1)

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

2014 (2)

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

2013 (1)

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

2011 (2)

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

2010 (1)

M. J. Mori, S. T. Boles, and E. A. Fitzgerald, “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates,” J. Vac. Sci. Technol. A 28, 182–188 (2010).
[Crossref]

2009 (6)

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34, 1198–1200 (2009).
[Crossref]

X. Sun, J. Liu, L. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95, 011911 (2009).
[Crossref]

M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
[Crossref]

M. J. Mori and E. A. Fitzgerald, “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates,” J. Appl. Phys. 105, 013107 (2009).
[Crossref]

2008 (2)

Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
[Crossref]

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

2007 (2)

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15, 11272–11277 (2007).
[Crossref]

2001 (2)

Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
[Crossref]

S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
[Crossref]

1998 (1)

H. Shibata, “Negative thermal quenching curves in photoluminescence of solids,” Jpn. J. Appl. Phys. 37, 550–553 (1998).
[Crossref]

1997 (1)

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

1994 (1)

L. Pavesi and M. Guzzi, “Photoluminescence of AlxGa1−xAs alloys,” J. Appl. Phys. 75, 4779 (1994).
[Crossref]

1992 (1)

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

1991 (1)

S. C. Jain and D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid State Electron. 34, 453–465 (1991).
[Crossref]

1987 (1)

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

1983 (1)

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

1973 (1)

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

1967 (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34, 149–154 (1967).
[Crossref]

Alberi, K.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

Algora, C.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

Bechtel, H.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Bhusal, L.

M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
[Crossref]

Boles, S. T.

M. J. Mori, S. T. Boles, and E. A. Fitzgerald, “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates,” J. Vac. Sci. Technol. A 28, 182–188 (2010).
[Crossref]

Bosio, C.

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Cai, Y.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

Camacho-Aguilera, R.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

Chang, C. S.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Chang, P. T.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Chang, S. J.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Chen, C.-H.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Chen, T. P.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Enstrom, R. E.

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

Euthymiou, P. C.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Faucher, J.

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Fitzgerald, E. A.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

M. J. Mori, S. T. Boles, and E. A. Fitzgerald, “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates,” J. Vac. Sci. Technol. A 28, 182–188 (2010).
[Crossref]

M. J. Mori and E. A. Fitzgerald, “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates,” J. Appl. Phys. 105, 013107 (2009).
[Crossref]

Fluegel, B.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

France, R.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

Friedman, D. J.

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

Fujita, S.

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

Galiana, B.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

García, I.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

Geisz, J.

M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
[Crossref]

Geisz, J. F.

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

Grilli, E.

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Guzzi, M.

L. Pavesi and M. Guzzi, “Photoluminescence of AlxGa1−xAs alloys,” J. Appl. Phys. 75, 4779 (1994).
[Crossref]

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Han, Z.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

Heider, M.

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

Howard, A.

S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
[Crossref]

Huang, K. H.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Ishitani, Y.

Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
[Crossref]

Jacobs, B.

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

Jain, S. C.

S. C. Jain and D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid State Electron. 34, 453–465 (1991).
[Crossref]

Jiang, C.-S.

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

Jun, S.

S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
[Crossref]

Kim, T.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Kimerling, L.

X. Sun, J. Liu, L. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95, 011911 (2009).
[Crossref]

Kimerling, L. C.

Koch, T. L.

Kohen, D. A.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Krame, M. R.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Lang, J. R.

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

Lee, K. E. K.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Lee, M. L.

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Lee, S.

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

Liu, J.

Made, R. I.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Mascarenhas, A.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
[Crossref]

Michel, J.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

X. Sun, J. Liu, L. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95, 011911 (2009).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34, 1198–1200 (2009).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15, 11272–11277 (2007).
[Crossref]

Milakovich, T.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Mori, M. J.

M. J. Mori, S. T. Boles, and E. A. Fitzgerald, “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates,” J. Vac. Sci. Technol. A 28, 182–188 (2010).
[Crossref]

M. J. Mori and E. A. Fitzgerald, “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates,” J. Appl. Phys. 105, 013107 (2009).
[Crossref]

M. J. Mori, “Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices,” Ph.D. thesis (MIT, 2008).

Mueller, G. O.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Mueller-Mach, R.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Nay Yaung, K.

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Nuese, C. J.

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

Oelgart, G.

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

Oggioni, S.

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Oh, S.

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

Olavarria, W.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

Pan, D.

Papaioannou, G. J.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Park, J.

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

Pavesi, L.

L. Pavesi and M. Guzzi, “Photoluminescence of AlxGa1−xAs alloys,” J. Appl. Phys. 75, 4779 (1994).
[Crossref]

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Rey-Stolle, I.

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

Roulston, D. J.

S. C. Jain and D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid State Electron. 34, 453–465 (1991).
[Crossref]

Satoh, M.

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

Schmidt, P. J.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Schwabe, R.

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

Shchekin, O. B.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Shibata, H.

H. Shibata, “Negative thermal quenching curves in photoluminescence of solids,” Jpn. J. Appl. Phys. 37, 550–553 (1998).
[Crossref]

Shin, K.

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

Shiraki, Y.

Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
[Crossref]

Sigai, A. G.

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

Staehli, J. L.

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Steigelmann, O.

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Steiner, M.

M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
[Crossref]

Steiner, M. A.

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

Stringfellow, G.

S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
[Crossref]

Su, Y. K.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Sun, X.

Symeonides, C. I.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Taguchi, T.

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

Tomasulo, S.

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Vaisman, M.

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Varshni, Y. P.

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34, 149–154 (1967).
[Crossref]

Vesely, M.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Wang, B.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Wang, C.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Wang, L.

Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
[Crossref]

Wang, X.

Wu, Y. R.

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

Yaguchi, H.

Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
[Crossref]

Yang, C.

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

Yannakopoulos, P. H.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Yaung, K. N.

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

Yokogawa, T.

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

Yoon, S. F.

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

Zamerowski, T.

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

Zardas, G. E.

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Zhang, Y.

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
[Crossref]

Appl. Phys. Lett. (5)

X. Sun, J. Liu, L. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95, 011911 (2009).
[Crossref]

C. Yang, S. Lee, K. Shin, S. Oh, and J. Park, “Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics,” Appl. Phys. Lett. 99, 091904 (2011).
[Crossref]

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, and M. L. Lee, “Metamorphic 2.1–2.2  eV InGaP solar cells on GaP substrates,” Appl. Phys. Lett. 104, 173903 (2014).
[Crossref]

Y. Zhang, C.-S. Jiang, D. J. Friedman, J. F. Geisz, and A. Mascarenhas, “Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition,” Appl. Phys. Lett. 94, 091113 (2009).
[Crossref]

IEEE Photon. Technol. Lett. (1)

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer,” IEEE Photon. Technol. Lett. 9, 1199–1201 (1997).
[Crossref]

IEEE Trans. Electron. Devices (1)

T. Yokogawa, T. Taguchi, S. Fujita, M. Satoh, and M. Satoh, “Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS,” IEEE Trans. Electron. Devices 30, 271–277 (1983).
[Crossref]

J. Appl. Phys. (5)

M. Steiner, L. Bhusal, and J. Geisz, “CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades,” J. Appl. Phys. 106, 063525 (2009).
[Crossref]

M. J. Mori and E. A. Fitzgerald, “Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates,” J. Appl. Phys. 105, 013107 (2009).
[Crossref]

S. Jun, G. Stringfellow, and A. Howard, “Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy,” J. Appl. Phys. 90, 6048–6053 (2001).
[Crossref]

L. Pavesi and M. Guzzi, “Photoluminescence of AlxGa1−xAs alloys,” J. Appl. Phys. 75, 4779 (1994).
[Crossref]

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, and A. Mascarenhas, “Direct-indirect crossover in GaxIn1−xP alloys,” J. Appl. Phys. 110, 113701 (2011).
[Crossref]

J. Cryst. Growth (3)

B. Wang, C. Wang, D. A. Kohen, R. I. Made, K. E. K. Lee, T. Kim, T. Milakovich, E. A. Fitzgerald, S. F. Yoon, and J. Michel, “Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe,” J. Cryst. Growth 441, 78–83 (2016).
[Crossref]

K. N. Yaung, S. Tomasulo, J. R. Lang, J. Faucher, and M. L. Lee, “Defect selective etching of GaAsyP1–y photovoltaic materials,” J. Cryst. Growth 404, 140–145 (2014).
[Crossref]

I. García, I. Rey-Stolle, B. Galiana, and C. Algora, “Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties,” J. Cryst. Growth 298, 794–799 (2007).
[Crossref]

J. Electrochem. Soc. (1)

A. G. Sigai, C. J. Nuese, R. E. Enstrom, and T. Zamerowski, “Vapor growth of In1−xGaxP for P-N junction electroluminescence,” J. Electrochem. Soc. 120, 947–955 (1973).
[Crossref]

J. Vac. Sci. Technol. A (1)

M. J. Mori, S. T. Boles, and E. A. Fitzgerald, “Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates,” J. Vac. Sci. Technol. A 28, 182–188 (2010).
[Crossref]

Jpn. J. Appl. Phys. (2)

H. Shibata, “Negative thermal quenching curves in photoluminescence of solids,” Jpn. J. Appl. Phys. 37, 550–553 (1998).
[Crossref]

Y. Ishitani, H. Yaguchi, and Y. Shiraki, “Temperature dependence of excitonic Γc–Γv transition energies of GaxIn1−xP crystals,” Jpn. J. Appl. Phys. 40, 1183–1187 (2001).
[Crossref]

Opt. Express (1)

Opt. Lett. (1)

Phys. Rev. B (2)

Y. Zhang, A. Mascarenhas, and L. Wang, “Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys,” Phys. Rev. B 78, 235202 (2008).
[Crossref]

M. Guzzi, E. Grilli, S. Oggioni, J. L. Staehli, C. Bosio, and L. Pavesi, “Indirect-energy-gap dependence on Al concentration in AlxGa1−xAs alloys,” Phys. Rev. B 45, 10951–10957 (1992).
[Crossref]

Phys. Status Solidi (1)

R. Mueller-Mach, G. O. Mueller, M. R. Krame, O. B. Shchekin, P. J. Schmidt, H. Bechtel, C.-H. Chen, and O. Steigelmann, “All nitride monochromatic amber emitting phosphor converted light emitting diodes,” Phys. Status Solidi 3, 7–8 (2009).
[Crossref]

Physica (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34, 149–154 (1967).
[Crossref]

Semicond. Sci. Technol. (1)

G. Oelgart, R. Schwabe, M. Heider, and B. Jacobs, “Photoluminescence of AlxGa1−xAs near the Γ-X crossover,” Semicond. Sci. Technol. 2, 468–474 (1987).
[Crossref]

Solid State Commun. (1)

G. E. Zardas, C. I. Symeonides, P. C. Euthymiou, G. J. Papaioannou, P. H. Yannakopoulos, and M. Vesely, “Electron irradiation induced defects in undoped and Te doped gallium phosphide,” Solid State Commun. 145, 332–336 (2008).
[Crossref]

Solid State Electron. (1)

S. C. Jain and D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers,” Solid State Electron. 34, 453–465 (1991).
[Crossref]

Other (1)

M. J. Mori, “Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices,” Ph.D. thesis (MIT, 2008).

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Figures (7)

Fig. 1.
Fig. 1. (a) [110]-pole TEM pattern of fully disordered lightly Te-doped Ga0.74In0.26P sample with n=7×1016  cm3. (b) SEM image of the etch pits of Ga0.74In0.26P film, and EPD=(3±0.5)×106  cm2.
Fig. 2.
Fig. 2. Temperature-dependent normalized PL spectra (6–300 K) of Te-doped Ga0.74In0.26P samples with (a) n=7×1016  cm3, (b) n=9×1017  cm3, and (c) n=2×1018  cm3. The positions of NPx, LAx, and DAP emission peaks from Ref. [3] are labeled, and their positions are indicated by dashed black lines. Solid red lines and arrows indicate the positions of direct band emission, shifting with increasing temperature.
Fig. 3.
Fig. 3. Peak positions of Te-doped Ga0.74In0.26P samples versus temperature. The data points marked with green stars are from Ref. [3]. Dashed lines are fitted to derive the thermal coefficients of the Γ band.
Fig. 4.
Fig. 4. Temperature-dependent PL spectra (175–300 K) of Te-doped Ga0.74In0.26P samples with (a) S01, n=7×1016  cm3, (b) S02, n=9×1017  cm3, and (c) S03, n=2×1018  cm3.
Fig. 5.
Fig. 5. Arrhenius plot of integrated PL intensity versus temperature for Te-doped Ga0.74In0.26P samples with n=9×1017  cm3 (red dots) and n=2×1018  cm3 (blue diamonds). The activation energies, Ea, were derived from the fitted dashed lines.
Fig. 6.
Fig. 6. Integrated PL intensity (black squares) of Te-doped Ga0.74In0.26P samples and their corresponding peak emission energy (blue circles) versus doping concentration at room temperature. Curve fitting (blue solid line) shows an approximate linear regression of emission energy with increasing doping concentration due to BGN effect.
Fig. 7.
Fig. 7. (a) XTEM image of Te-doped Ga0.74In0.26P sample at n=5×1018  cm3. (b) Scanning XTEM image at high resolution.

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