Abstract

Monolithic white-light-emitting diodes (white LEDs) without phosphors are demonstrated using InGaN/GaN multiple quantum wells (MQWs) grown on GaN microrings formed by selective area epitaxy on SiO2 mask patterns. The microring structure is composed of {1-101} semi-polar facets and a (0001) c-plane, attributed to favorable surface polarity and surface energy. The white light is realized by combining short and long wavelengths of electroluminescence emissions from InGaN/GaN MQWs on the {1-101} semi-polar facets and the (0001) c-plane, respectively. The change in the emission wavelengths from each microfacet is due to the In composition variations of the MQWs. These results suggest that white emission can possibly be obtained without using phosphors by combining emission light from microstructures.

© 2016 Chinese Laser Press

Full Article  |  PDF Article
OSA Recommended Articles
White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Wei-Chih Lai, and Jinn-Kong Sheu
Opt. Express 23(7) A401-A412 (2015)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C. Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu
Opt. Express 21(S5) A864-A871 (2013)

Light-emitting devices with tunable color from ZnO nanorods grown on InGaN/GaN multiple quantum wells

Han-Yu Shih, Shih-Hao Cheng, Jyong-Kuen Lian, Tai-Yuan Lin, and Yang-Fang Chen
Opt. Express 20(S2) A270-A277 (2012)

References

  • View by:
  • |
  • |
  • |

  1. G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
    [Crossref]
  2. E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308, 1274–1278 (2005).
    [Crossref]
  3. C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
    [Crossref]
  4. Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
    [Crossref]
  5. S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
    [Crossref]
  6. J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
    [Crossref]
  7. I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
    [Crossref]
  8. Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
    [Crossref]
  9. S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
    [Crossref]
  10. K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
    [Crossref]
  11. M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
    [Crossref]
  12. M. Feneberg and K. Thonke, “Polarization fields of III-nitrides grown in different crystal orientations,” J. Phys. 19, 403201 (2007).
  13. G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
    [Crossref]
  14. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
    [Crossref]
  15. H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
    [Crossref]
  16. T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
    [Crossref]
  17. H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
    [Crossref]

2012 (1)

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

2008 (2)

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

2007 (3)

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

M. Feneberg and K. Thonke, “Polarization fields of III-nitrides grown in different crystal orientations,” J. Phys. 19, 403201 (2007).

2006 (2)

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

2005 (5)

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308, 1274–1278 (2005).
[Crossref]

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

2003 (2)

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

2000 (1)

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

1998 (1)

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Aoki, M.

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

Bradley, D. D. C.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Chen, C. H.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Chen, P.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Cho, C. Y.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Choi, H. W.

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

Chu, J. T.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Chyi, J. I.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Dawson, M. D.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

DenBaars, S. P.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Edwards, P. R.

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

Feneberg, M.

M. Feneberg and K. Thonke, “Polarization fields of III-nitrides grown in different crystal orientations,” J. Phys. 19, 403201 (2007).

Fini, P. T.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Funato, M.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

Gessmann, T.

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

Griffin, C.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Gu, E.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Han, P.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Hayashi, K.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

Heliotis, G.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Hiramatsu, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Hua, X. M.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Huang, C. F.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

Huang, H. Y.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Huang, J. J.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

Ibbetson, J. P.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Jeon, C. W.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Kawaami, Y.

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

Kawakami, Y.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

Keller, S.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Kim, J. K.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308, 1274–1278 (2005).
[Crossref]

Kim, J. Y.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Kuo, C. H.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Kuo, H. C.

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Kwon, M. K.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Lai, W. C.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Lee, M. L.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Lee, Y. J.

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

Li, Y. L.

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

Lim, J. H.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Lin, P. C.

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

Lin, W. P.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Liu, B.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Lu, C. F.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

Lu, T. C.

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

Marchand, H.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Martin, R. W.

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

Mishra, U. K.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Miyake, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Mizutani, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Motogaito, A.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Mukai, T.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

Narukawa, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Narukawa, Y.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

Nishiyama, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Nishizuka, K.

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

Onishi, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

Park, I. K.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Park, S. J.

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Ponce, F. A.

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

Schubert, E. F.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308, 1274–1278 (2005).
[Crossref]

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

Shei, S. C.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Sheu, J. K.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

Shi, J. W.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Shi, Y.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Shimizu, J.

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

Shirai, M.

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

Speck, J. S.

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

Srinivasan, S.

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

Stavrinou, P. N.

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

Stevens, M.

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

Tang, T. Y.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

Thonke, K.

M. Feneberg and K. Thonke, “Polarization fields of III-nitrides grown in different crystal orientations,” J. Phys. 19, 403201 (2007).

Tsai, C. M.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Tsuchiya, T.

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

Ueda, M.

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

Wang, C. K.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Wang, M. Y.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Wang, S. C.

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

Wu, Y. S.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Wu, Z. L.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Xie, Z. L.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Xiu, X. Q.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Xu, F.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Xu, Z.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Yang, C. C.

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

Yang, G. F.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Yang, T. H.

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

Yu, Z. G.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Zhang, R.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Zheng, Y. D.

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Appl. Phys. Express (1)

M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1, 011106 (2008).
[Crossref]

Appl. Phys. Lett. (7)

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett. 83, 4483–4485 (2003).
[Crossref]

G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, “Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorine-based red-, green-, blue-, and white-light-emitting polymer overlayer films,” Appl. Phys. Lett. 87, 103505 (2005).
[Crossref]

C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diodes of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007).
[Crossref]

I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park, “Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells,” Appl. Phys. Lett. 92, 091110 (2008).
[Crossref]

Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes,” Appl. Phys. Lett. 90, 161115 (2007).
[Crossref]

S. Srinivasan, M. Stevens, F. A. Ponce, and T. Mukai, “Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets,” Appl. Phys. Lett. 87, 131911 (2005).
[Crossref]

K. Nishizuka, M. Funato, Y. Kawaami, Y. Narukawa, and T. Mukai, “Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11-22} microfacets,” Appl. Phys. Lett. 87, 231901 (2005).
[Crossref]

IEEE Photon. Technol. Lett. (1)

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, W. P. Lin, T. H. Yang, and J. I. Chyi, “Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light,” IEEE Photon. Technol. Lett. 18, 2593–2595 (2006).
[Crossref]

J. Appl. Phys. (1)

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94, 2167–2172 (2003).
[Crossref]

J. Cryst. Growth (3)

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, and H. Miyake, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221, 316–326 (2000).
[Crossref]

H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition,” J. Cryst. Growth 195, 328–332 (1998).
[Crossref]

T. Tsuchiya, J. Shimizu, M. Shirai, and M. Aoki, “InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy,” J. Cryst. Growth 276, 439–445 (2005).
[Crossref]

J. Phys. (1)

M. Feneberg and K. Thonke, “Polarization fields of III-nitrides grown in different crystal orientations,” J. Phys. 19, 403201 (2007).

Jpn. J. Appl. Phys. (1)

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes,” Jpn. J. Appl. Phys. 45, 2463–2466 (2006).
[Crossref]

Phys. E (1)

G. F. Yang, P. Chen, M. Y. Wang, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, and Y. D. Zheng, “Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,” Phys. E 45, 61–65 (2012).
[Crossref]

Science (1)

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308, 1274–1278 (2005).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1.
Fig. 1. Optical microscope image of the mask pattern designed.
Fig. 2.
Fig. 2. (a) Top-view and (b) cross-section SEM images of InGaN/GaN MQWs grown on a GaN microring structure.
Fig. 3.
Fig. 3. (a) CL spectra from different facets of an InGaN/GaN MQW microring. Monochromatic CL intensity images over a single MQW microring at wavelengths of (b) 445 and (c) 560 nm.
Fig. 4.
Fig. 4. Position dependence of the CL peak wavelength from the inner {1-100} plane to the top (0001) surface.
Fig. 5.
Fig. 5. Photo image of EL at a 50 mA forward drive current for the fabricated LED chip wafer. The inset shows the surface pattern image of a single LED chip.
Fig. 6.
Fig. 6. EL spectra of white LED with increasing injection current. The inset shows the I–V characteristics of the LED.

Metrics