Abstract

A molybdenum disulfide (MoS2) saturable absorber was fabricated by thermally decomposing the ammonium thiomolybdate. By using the MoS2 absorber, a compact diode-pumped passively Q-switched Tm:GdVO4 laser has been demonstrated. A stable Q-switched laser with repetition rates from 25.58 to 48.09 kHz was achieved. Maximum average output power was 100 mW with the shortest pulse duration of 0.8 μs. Maximum pulse energy is 2.08 μJ at center of 1902 nm.

© 2015 Chinese Laser Press

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References

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    [Crossref]
  4. Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
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    [Crossref]
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    [Crossref]
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    [Crossref]
  20. K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
    [Crossref]
  21. B. Xu, Y. J. Cheng, Y. Wang, Y. Z. Huang, J. Peng, Z. Q. Luo, H. Y. Xu, Z. P. Cai, J. Weng, and R. Moncorgé, “Passively Q-switched Nd:YAlO3 nanosecond laser using MoS2 as saturable absorber,” Opt. Express 22, 28934–28940 (2014).
    [Crossref]
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  23. Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
    [Crossref]
  24. S. Shu, T. Yu, J. Hou, R. Liu, M. Huang, and W. Chen, “End-pumped all solid-state high repetition rate Tm, Ho:LuLF laser,” Chin. Opt. Lett. 9, 021401 (2011).
    [Crossref]

2015 (3)

2014 (5)

2013 (4)

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

M. N. Cizmeciyan, J. W. Kim, S. Bae, B. H. Hong, F. Rotermund, and A. Sennaroglu, “Graphene mode-locked femtosecond Cr:ZnSe laser at 2500  nm,” Opt. Lett. 38, 341–343 (2013).
[Crossref]

2012 (3)

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

2011 (2)

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

S. Shu, T. Yu, J. Hou, R. Liu, M. Huang, and W. Chen, “End-pumped all solid-state high repetition rate Tm, Ho:LuLF laser,” Chin. Opt. Lett. 9, 021401 (2011).
[Crossref]

2010 (2)

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

2009 (1)

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

2008 (1)

Y. F. Li, Y. Z. Wang, and B. Q. Yao, “Comparative optical study of thulium-doped YAlO3 and GdVO4 single crystals,” Laser Phys. Lett. 5, 37–40 (2008).
[Crossref]

1999 (1)

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Ahn, J.-H.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Akagawa, K.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Bae, S.

Bark, H.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Basko, D. M.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Bonaccorso, F.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Cai, Z. P.

Cao, L.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Cerny, P.

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Chang, C. S.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Chang, M. T.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Chen, W.

Chen, Y.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Cheng, Y. J.

Cho, J. H.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Cizmeciyan, M. N.

Coleman, J. N.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Du, J.

Fan, J.

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Fan, J. T.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Feng, Y. Y.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Ferrari, A. C.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Fox, D.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Fukuda, T.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Hao, X. P.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Hasan, T.

R. L. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives invited,” Photon. Res. 3, A30–A42 (2015).
[Crossref]

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Hashida, M.

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

He, J.

He, J. L.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Heinz, T. F.

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Higuchi, M.

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Hong, B. H.

Hou, J.

Howe, R. C. T.

Hu, G.

Huang, M.

Huang, Y. Z.

Jelinkova, H.

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Jia, Z.

Jiang, B. X.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Josef, W.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Ju, Y. L.

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Kelleher, E. J. R.

Kim, H.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Kim, J. W.

Kis, A.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Kong, L. C.

Lai, C. S.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Lan, C. Y.

Lee, C.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Lee, J.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Lee, Y.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Lee, Y. H.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Lee, Z.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Li, C.

H. D. Xia, H. P. Li, C. Y. Lan, C. Li, X. X. Zhang, S. J. Zhang, and Y. Liu, “Ultrafast erbium-doped fiber laser mode-locked by a CVD grown molybdenum disulfide (MoS2) saturable absorber,” Opt. Express 22, 17341–17348 (2014).
[Crossref]

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Li, H.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Li, H. P.

Li, L. J.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Li, X. L.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Li, Y. F.

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Y. F. Li, Y. Z. Wang, and B. Q. Yao, “Comparative optical study of thulium-doped YAlO3 and GdVO4 single crystals,” Laser Phys. Lett. 5, 37–40 (2008).
[Crossref]

Lin, Y. C.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Liu, J.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Liu, K. K.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Liu, R.

Liu, Y.

H. D. Xia, H. P. Li, C. Y. Lan, C. Li, X. X. Zhang, S. J. Zhang, and Y. Liu, “Ultrafast erbium-doped fiber laser mode-locked by a CVD grown molybdenum disulfide (MoS2) saturable absorber,” Opt. Express 22, 17341–17348 (2014).
[Crossref]

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Loh, K. P.

Lotya, M.

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Lou, F.

Lu, S. B.

Luo, Z. Q.

Mak, K. F.

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Mei, L.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Moncorgé, R.

Murakami, M.

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

O’Neill, A.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Oh, I.-K.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Oswald, J.

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Peng, J.

Popa, D.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Privitera, G.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Qian, L. J.

Qu, Z. S.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Rotermund, F.

Ryu, G. H.

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Sakabe, S.

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

Sennaroglu, A.

Shan, J.

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Shi, Y. M.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Shimizu, S.

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

Shu, S.

Song, C. W.

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Su, C. Y.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Su, L.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Su, L. B.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Su, X.

Suh, S. J.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Sulc, J.

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Sun, Z.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Tang, D. Y.

Tashiro, H.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Tokita, S.

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

Torrisi, F.

R. L. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives invited,” Photon. Res. 3, A30–A42 (2015).
[Crossref]

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Urata, Y.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

Wada, S.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Wang, A.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Wang, F.

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

Wang, J.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Wang, K.

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Wang, K. P.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Wang, S.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Wang, S. X.

Wang, Y.

Wang, Y. G.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Wang, Y. Z.

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Y. F. Li, Y. Z. Wang, and B. Q. Yao, “Comparative optical study of thulium-doped YAlO3 and GdVO4 single crystals,” Laser Phys. Lett. 5, 37–40 (2008).
[Crossref]

Wang, Z.

Wang, Z. G.

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Wen, S. C.

Weng, J.

Woodward, R. L.

Wu, Y. Z.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Xia, H. D.

Xie, G. Q.

Xu, B.

Xu, H. Y.

Xu, J.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Xu, J. L.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Yang, K. J.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Yang, Y.

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Yao, B. Q.

Y. F. Li, Y. Z. Wang, and B. Q. Yao, “Comparative optical study of thulium-doped YAlO3 and GdVO4 single crystals,” Laser Phys. Lett. 5, 37–40 (2008).
[Crossref]

Yoon, D. H.

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Yu, H.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Yu, H. H.

Yu, T.

Yu, Y.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Yuan, P.

Zhang, B.

Zhang, H.

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS2) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22, 7249–7260 (2014).
[Crossref]

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Zhang, H. J.

Zhang, H. Z.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Zhang, L.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Zhang, M.

Zhang, S. J.

Zhang, W. J.

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Zhang, X. X.

Zhang, X. Y.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Zhang, Y.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Zhao, M.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Zhao, Q. Z.

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Zhao, R.

Zheng, J.

Zheng, L. H.

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

ACS Nano (3)

Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, “Graphene mode-locked ultrafast laser,” ACS Nano 4, 803–810 (2010).
[Crossref]

K. P. Wang, J. Wang, J. T. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Y. Feng, X. Y. Zhang, B. X. Jiang, Q. Z. Zhao, H. Z. Zhang, J. N. Coleman, L. Zhang, and W. Josef, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

K. Wang, J. Wang, J. Fan, and M. Lotya, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7, 9260–9267 (2013).
[Crossref]

Adv. Mater. (1)

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband few-layer MoS2 saturable absorber,” Adv. Mater. 26, 3538–3544 (2014).
[Crossref]

Appl. Phys. Lett. (1)

J. L. Xu, X. L. Li, J. L. He, X. P. Hao, Y. Z. Wu, Y. Yang, and K. J. Yang, “Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser,” Appl. Phys. Lett. 99, 261107 (2011).
[Crossref]

Chin. Opt. Lett. (1)

Cryst. Res. Technol. (1)

Y. Urata, K. Akagawa, S. Wada, H. Tashiro, S. J. Suh, D. H. Yoon, and T. Fukuda, “Growth and optical properties of Tm:GdVO4 single crystal,” Cryst. Res. Technol. 34, 41–45 (1999).
[Crossref]

Laser Phys. Lett. (3)

Y. F. Li, Y. Z. Wang, and B. Q. Yao, “Comparative optical study of thulium-doped YAlO3 and GdVO4 single crystals,” Laser Phys. Lett. 5, 37–40 (2008).
[Crossref]

J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and J. Xu, “Graphene oxide absorber for 2  μm passive mode-locking Tm:YAlO3 laser,” Laser Phys. Lett. 9, 15–19 (2012).
[Crossref]

Z. G. Wang, C. W. Song, Y. F. Li, Y. L. Ju, and Y. Z. Wang, “CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature,” Laser Phys. Lett. 6, 105–108 (2009).
[Crossref]

Nano Lett. (1)

K. K. Liu, W. J. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. M. Shi, H. Zhang, C. S. Lai, and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Nanoscale (1)

Y. Lee, J. Lee, H. Bark, I.-K. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J.-H. Ahn, and C. Lee, “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Nanoscale 6, 2821–2826 (2014).
[Crossref]

Nat. Nanotechnol. (1)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Opt. Express (3)

Opt. Lett. (1)

Photon. Res. (3)

Phys. Rev. Lett. (1)

K. F. Mak, C. Lee, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Sci. Rep. (1)

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1–5 (2013).

Other (2)

S. Tokita, M. Murakami, S. Shimizu, M. Hashida, and S. Sakabe, “Graphene Q-switching of a 3  μm Er:ZBLAN fiber laser,” in Advanced Solid-State Lasers Congress (2013), paper AF2A.9

P. Cerny, J. Oswald, J. Sulc, H. Jelinkova, Y. Urata, and M. Higuchi, “Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method,” in Advanced Solid State Photonics (2006).

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Figures (7)

Fig. 1.
Fig. 1. Schematic illustration of the formation of MoS 2 .
Fig. 2.
Fig. 2. (a) XRD pattern. (b) SEM images of as-grown MoS 2 on mica substrates. (c) Trilayered MoS 2 Raman spectra.
Fig. 3.
Fig. 3. Schematic configuration of the Q -switched Tm : GdVO 4 laser.
Fig. 4.
Fig. 4. Average output power of CW and passively Q -switched versus the absorbed pump power.
Fig. 5.
Fig. 5. Output spectra from Tm : GdVO 4 lasers in CW operation and passively Q -switched operation.
Fig. 6.
Fig. 6. Pulse width and repetition rate as a function of absorbed pump power.
Fig. 7.
Fig. 7. Passively Q -switched pulse at 40 and 2 μs / div .

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