Abstract

Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-area MoS2 thin film on SiO2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4cm2V1s1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.

© 2015 Chinese Laser Press

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References

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  1. D. Lembke and A. Kis, “Breakdown of high-performance monolayer MoS2 transistors,” ACS Nano 6, 10070–10075 (2012).
    [Crossref]
  2. H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
    [Crossref]
  3. B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
    [Crossref]
  4. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
    [Crossref]
  5. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
    [Crossref]
  6. S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
    [Crossref]
  7. M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
    [Crossref]
  8. K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
    [Crossref]
  9. S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
    [Crossref]
  10. H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
    [Crossref]
  11. H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
    [Crossref]
  12. Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
    [Crossref]
  13. J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
    [Crossref]
  14. S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
    [Crossref]
  15. Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
    [Crossref]
  16. K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
    [Crossref]
  17. Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
    [Crossref]
  18. Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).
  19. J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
    [Crossref]
  20. Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
    [Crossref]
  21. D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
    [Crossref]
  22. H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
    [Crossref]
  23. X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
    [Crossref]
  24. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
    [Crossref]
  25. X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
    [Crossref]
  26. C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
    [Crossref]
  27. K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
    [Crossref]
  28. J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
    [Crossref]

2014 (2)

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

2013 (9)

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

2012 (10)

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
[Crossref]

D. Lembke and A. Kis, “Breakdown of high-performance monolayer MoS2 transistors,” ACS Nano 6, 10070–10075 (2012).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

2011 (5)

C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
[Crossref]

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
[Crossref]

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

2010 (1)

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

2005 (1)

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Adam, S.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Aivazian, G.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Ajayan, P. M.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Altavilla, C.

C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
[Crossref]

Bai, X.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Baillargeat, D.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Balendhran, S.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Baugher, B. W.

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

Bergin, S. D.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Bhargava, S.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Bhaskaran, M.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Booth, T.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Cao, L.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Castro Neto, A. H.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Chang, C. S.

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, K. D.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, M. T.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Chen, W.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

Chen, Y.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Cheng, M.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Chhowalla, M.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Chim, C.-Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Cho, J.

H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
[Crossref]

Chu, L.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Churchill, H. O.

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

Ciambelli, P.

C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
[Crossref]

Cobden, D. H.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Coleman, J. N.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

De, S.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Eda, G.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Edwin, T. H. T.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Fam, D. W. H.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Feng, H.

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

Ferrari, A.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Galli, G.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Gao, T.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Gaucher, A.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Geim, A.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Ghatak, S.

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
[Crossref]

Ghosh, A.

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
[Crossref]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Han, W.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

He, J. H.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

He, Q.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Huang, C.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Huang, X.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Hwang, H.

H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
[Crossref]

Ippolito, S.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Jacobsen, K. W.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Jarillo-Herrero, P.

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

Ji, Q.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Jiang, D.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Jiao, L.

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

Kaasbjerg, K.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Kalantar-Zadeh, K.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Kan, M.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Kang, C. F.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Kats, E.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Khan, U.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Khotkevich, V.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Kim, H.

H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
[Crossref]

Kim, J.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

King, P. J.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Kis, A.

D. Lembke and A. Kis, “Breakdown of high-performance monolayer MoS2 transistors,” ACS Nano 6, 10070–10075 (2012).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Kumar, R.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Lee, Y. H.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Lembke, D.

D. Lembke and A. Kis, “Breakdown of high-performance monolayer MoS2 transistors,” ACS Nano 6, 10070–10075 (2012).
[Crossref]

Li, C.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Li, H.

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Li, L. J.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Li, Q.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Li, T.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Li, Z.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Lien, D. H.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Lin, C. A.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Lin, C. T.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lin, J.

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

Lin, Y. C.

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Lin, Z.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Liu, D.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Liu, H.

H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
[Crossref]

Liu, K. K.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Liu, M.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Liu, Y.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Liu, Z.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Loh, K. P.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Lotya, M.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Lou, J.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Lu, G.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Lu, Y.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Ma, D.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Martin, J.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Milana, S.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Moon, K.-S.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Morozov, S.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Najmaei, S.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Neal, A. T.

H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
[Crossref]

Novoselov, K.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

O’Neill, A.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Olivier, A.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Ou, J. Z.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Özyilmaz, B.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Pal, A. N.

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
[Crossref]

Qiao, X.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Radenovic, A.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Radisavljevic, B.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Ross, J. S.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Sarno, M.

C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
[Crossref]

Schedin, F.

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Schmidt, H.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Shi, Y.

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Shin, H. S.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Smith, R. J.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Song, X.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Splendiani, A.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Sriram, S.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Su, C. Y.

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Su, L.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Sun, L.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Tan, P.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Tan, P.-H.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Tay, B. K.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Thygesen, K. S.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Tian, X.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Toh, M.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Tok, A. I. Y.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Tsai, D.-S.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Tsai, M. L.

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Vasic, Z.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Wang, F.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Wang, J. T. W.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Wang, S.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Wang, X.

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

Wong, C.-P.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Wu, J.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Wu, S.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Wu, Y.

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

Xie, G.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Xu, X.

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

Yang, R.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Yang, W.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Yang, Y.

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

Yao, Y.

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Yap, C. C. R.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Ye, P. D.

H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
[Crossref]

Yin, Z.

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Young, K.

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Yu, H.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Yu, Y.

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Yu, Y. C.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhan, Y.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Zhang, H.

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Zhang, J.

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

Zhang, Q.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

Zhang, W.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Zhang, X.

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Zhang, X. Q.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhang, Y.

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

Zhao, W.

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

Zhong, J.

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

Zhong, S.

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

Zhuiykov, S.

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

ACS Nano (6)

D. Lembke and A. Kis, “Breakdown of high-performance monolayer MoS2 transistors,” ACS Nano 6, 10070–10075 (2012).
[Crossref]

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of electronic states in atomically thin MoS2 field-effect transistors,” ACS Nano 5, 7707–7712 (2011).
[Crossref]

H. Liu, A. T. Neal, and P. D. Ye, “Channel length scaling of MoS2 MOSFETs,” ACS Nano 6, 8563–8569 (2012).
[Crossref]

S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, and X. Xu, “Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization,” ACS Nano 7, 2768–2772 (2013).
[Crossref]

J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, and X. Bai, “Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes,” ACS Nano 8, 6024–6030 (2014).
[Crossref]

D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments,” ACS Nano 7, 3905–3911 (2013).
[Crossref]

Adv. Funct. Mater. (1)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22, 1385–1390 (2012).
[Crossref]

Adv. Mater. (1)

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, and L. J. Li, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Appl. Phys. Lett. (1)

J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, and W. Chen, “Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers,” Appl. Phys. Lett. 103, 063109 (2013).
[Crossref]

Chem. Mater. (1)

C. Altavilla, M. Sarno, and P. Ciambelli, “A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W),” Chem. Mater. 23, 3879–3885 (2011).
[Crossref]

J. Am. Chem. Soc. (1)

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135, 5304–5307 (2013).
[Crossref]

J. Mater. Chem. (1)

Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, and C.-P. Wong, “Large-scale production of two-dimensional nanosheets,” J. Mater. Chem. 22, 13494–13499 (2012).
[Crossref]

Nano Lett. (6)

Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, and M. Kan, “Epitaxial monolayer MoS2 on mica with novel photoluminescence,” Nano Lett. 13, 3870–3877 (2013).
[Crossref]

H. Hwang, H. Kim, and J. Cho, “MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials,” Nano Lett. 11, 4826–4830 (2011).
[Crossref]

H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, and B. Özyilmaz, “Transport properties of monolayer MoS2 grown by chemical vapor deposition,” Nano Lett. 14, 1909–1913 (2014).
[Crossref]

B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2,” Nano Lett. 13, 4212–4216 (2013).
[Crossref]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref]

K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, and H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Nanoscale (1)

S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method,” Nanoscale 4, 461–466 (2012).
[Crossref]

Nat. Chem. (1)

M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, and H. Zhang, “The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets,” Nat. Chem. 5, 263–275 (2013).
[Crossref]

Nat. Nanotechnol. (1)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Phys. Rev. B (2)

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, and P. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

Proc. Natl. Acad. Sci. USA (1)

K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Sci. Rep. (1)

Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao, “Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films,” Sci. Rep. 3, 1866 (2013).

Science (1)

J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, and R. J. Smith, “Two-dimensional nanosheets produced by liquid exfoliation of layered materials,” Science 331, 568–571 (2011).
[Crossref]

Small (2)

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, “Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature,” Small 8, 63–67 (2012).
[Crossref]

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Figures (4)

Fig. 1.
Fig. 1. Material characterizations of MoS2; (a) schematic diagram showing the chemical synthesis of MoS2; (b–d) SEM images showing different growth stages of MoS2 with different reaction times of 5, 12, and 30 min, respectively. Scale bars, 10 μm; (e) AFM topography of MoS2 film on SiO2 substrate. Bottom and top white profiles indicate bilayer and trilayers, respectively. Scale bar, 1 μm; (f) optical image of large-area MoS2 film transferred onto PDMS substrate.
Fig. 2.
Fig. 2. Spectroscopic characterizations of MoS2 films; (a) Raman spectra of few-layer MoS2 on SiO2/Si substrate; (b) PL spectrum of few-layer MoS2 film; (c) UV−visible spectrum of few-layer MoS2 film on quartz.
Fig. 3.
Fig. 3. (a) TEM image showing folded MoS2 film. Scale bar, 100 nm; (b) HRTEM image of MoS2 film. Scale bar, 5 nm. Inset, corresponding electron diffraction pattern; (c) XPS spectrum of MoS2 thin film; (d) XRD result for MoS2 thin film.
Fig. 4.
Fig. 4. (a) Typical transfer curve for MoS2 transistor. Inset, optical image of a FET device. Scale bar, 100 μm; (b) output curve for MoS2 transistor.

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