Abstract

Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20  A/cm2 and 33.7% at 3  A/cm2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.

© 2019 Chinese Laser Press

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  1. N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82–83 (1962).
    [Crossref]
  2. Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
    [Crossref]
  3. M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
    [Crossref]
  4. B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D 48, 403001 (2015).
    [Crossref]
  5. W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
    [Crossref]
  6. C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
    [Crossref]
  7. F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
    [Crossref]
  8. H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
    [Crossref]
  9. S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
    [Crossref]
  10. J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
    [Crossref]
  11. F. Jiang and Y. Pu, “Double inlet showerhead for metal organic vapor deposition reactor,” CN patentZL 200410017471.X (December 27, 2006).
  12. J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
    [Crossref]
  13. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
    [Crossref]
  14. X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
    [Crossref]
  15. Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
    [Crossref]
  16. X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
    [Crossref]
  17. Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
    [Crossref]
  18. C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
    [Crossref]
  19. J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
    [Crossref]

2016 (1)

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

2015 (4)

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
[Crossref]

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D 48, 403001 (2015).
[Crossref]

2014 (3)

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

2013 (2)

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

2010 (1)

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

2008 (1)

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

2005 (1)

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

1999 (1)

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

1994 (1)

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

1990 (1)

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

1971 (1)

W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
[Crossref]

1962 (1)

N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82–83 (1962).
[Crossref]

Ade, G.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Bevacqua, S. F.

N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82–83 (1962).
[Crossref]

Carter, C. C.

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

Chung, R. B.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Craford, M. G.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
[Crossref]

Damilano, B.

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D 48, 403001 (2015).
[Crossref]

DeFevere, D. C.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

DenBaars, S. P.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Din, J.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Fang, F.

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

Fang, W.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Fellows, N.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Fletcher, R. M.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

Fuhrmann, D.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Fujitob, K.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Gil, B.

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D 48, 403001 (2015).
[Crossref]

Groves, W. O.

W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
[Crossref]

Hangleiter, A.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Hashimoto, R.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

Herzog, A. H.

W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
[Crossref]

Hinze, P.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Hirasawa, H.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Hitzel, F.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Hofler, G. E.

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

Holonyak, N.

N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82–83 (1962).
[Crossref]

Hsu, C.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Hwang, J.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

Ichikawa, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Jiang, F.

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
[Crossref]

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

F. Jiang and Y. Pu, “Double inlet showerhead for metal organic vapor deposition reactor,” CN patentZL 200410017471.X (December 27, 2006).

Kish, F. A.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Krames, M. R.

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

Kuo, C. P.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

Lardizabal, M. C.

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

Li, C.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Li, H.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Liu, J.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
[Crossref]

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

Lu, L.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Lu, T.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Mao, Q.

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

Masui, H.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Mo, C.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Mukai, T.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Nakamura, S.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Narukawa, Y.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Netzel, C.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Nunoue, S.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

Ochiai, H. M.

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

Osentowski, T. D.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

Pan, S.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Park, K. G.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Peanasky, M. J.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Pu, Y.

F. Jiang and Y. Pu, “Double inlet showerhead for metal organic vapor deposition reactor,” CN patentZL 200410017471.X (December 27, 2006).

Quan, L.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Quan, Z.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

Robbins, V. M.

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

Rossow, U.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Saito, M.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Saito, S.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

Sanga, D.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Sano, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Satoa, H.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Speck, J. S.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Steigerwald, D. A.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Steranka, F. M.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Vanderwater, D. A.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Wang, G.

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Wang, L.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

Wang, X.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Wu, C.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Wu, F.

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Wu, X.

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
[Crossref]

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

Wu, Y.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Xiong, C.

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

Yu, J. G.

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

Zhang, J.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

Zheng, C.

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

AIP Adv. (1)

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6, 055208 (2016).
[Crossref]

Appl. Phys. A (1)

J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, and F. Jiang, “High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate,” Appl. Phys. A 114, 1049–1053 (2014).
[Crossref]

Appl. Phys. Express (1)

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6, 111004 (2013).
[Crossref]

Appl. Phys. Lett. (7)

X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, and F. Jiang, “Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes,” Appl. Phys. Lett. 104, 221101 (2014).
[Crossref]

N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82–83 (1962).
[Crossref]

M. R. Krames, H. M. Ochiai, G. E. Hofler, and C. C. Carter, “High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365–2367 (1999).
[Crossref]

W. O. Groves, A. H. Herzog, and M. G. Craford, “The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes,” Appl. Phys. Lett. 19, 184–186 (1971).
[Crossref]

C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett. 57, 2937–2939 (1990).
[Crossref]

F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839–2841 (1994).
[Crossref]

H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates,” Appl. Phys. Lett. 92, 221110 (2008).
[Crossref]

Chin. Phys. B (1)

J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, and F. Jiang, “Status of GaN-based green light-emitting diodes,” Chin. Phys. B 24, 067804 (2015).
[Crossref]

CrystEngComm (1)

J. Liu, J. Zhang, Q. Mao, X. Wu, and F. Jiang, “Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate,” CrystEngComm 15, 3372–3376 (2013).
[Crossref]

J. Appl. Phys. (3)

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116, 183107 (2014).
[Crossref]

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118, 164504 (2015).
[Crossref]

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118, 193102 (2015).
[Crossref]

J. Phys. D (2)

B. Damilano and B. Gil, “Yellow-red emission from (Ga,In)N heterostructures,” J. Phys. D 48, 403001 (2015).
[Crossref]

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D 43, 354002 (2010).
[Crossref]

Phys. Rev. Lett. (1)

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95, 127402 (2005).
[Crossref]

Other (1)

F. Jiang and Y. Pu, “Double inlet showerhead for metal organic vapor deposition reactor,” CN patentZL 200410017471.X (December 27, 2006).

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Figures (8)

Fig. 1.
Fig. 1. Schematic epitaxial structure of an InGaN yellow LED grown on Si substrate.
Fig. 2.
Fig. 2. (a) TEM image of a V-pit and (b) schematic 3D pn junction with V-pit structure.
Fig. 3.
Fig. 3. FL morphology of InGaN QWs of a yellow LED on Si substrate.
Fig. 4.
Fig. 4. Omega-2theta scan curve of the yellow InGaN LED structure grown on Si substrate.
Fig. 5.
Fig. 5. SIMS depth profile of Mg-In-Al-Si in the yellow LED structure on Si substrate.
Fig. 6.
Fig. 6. Plot of WPE and light output power as functions of current density for a yellow LED on Si substrate.
Fig. 7.
Fig. 7. Dependence of (a) WPE, (b) efficacy, (c) voltage, and (d) FWHM on wavelength for InGaN-based LEDs on Si substrate from the green to orange emission range.
Fig. 8.
Fig. 8. Spectrum of a CM white LED without phosphor made up by InGaN blue, cyan, green, and yellow LEDs and AlGaInP red LEDs.

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