Abstract

This work reports the real-time observation of the interlayer lattice vibrations in bilayer and few-layer PtSe2 by means of the coherent phonon method. The layer-breathing mode and standing wave mode of the interlayer vibrations are found to coexist in such a kind of group-10 transition metal dichalcogenides (TMDCs). The interlayer breathing force constant standing for perpendicular coupling (per effective atom) is derived as 7.5 N/m, 2.5 times larger than that of graphene. The interlayer shearing force constant is comparable to the interlayer breathing force constant, which indicates that PtSe2 has nearly isotropic interlayer coupling. The low-frequency Raman spectroscopy elucidates the polarization behavior of the layer-breathing mode that is assigned to have A1g symmetry. The standing wave mode shows redshift with the increasing number of layers, which successfully determines the out-of-plane sound velocity of PtSe2 experimentally. Our results manifest that the coherent phonon method is a good tool to uncover the interlayer lattice vibrations, beyond the conventional Raman spectroscopy limit. The strong interlayer interaction in group-10 TMDCs reveals their promising potential in high-frequency (terahertz) micro-mechanical resonators.

© 2019 Chinese Laser Press

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2019 (3)

H. Xu, H. Zhang, Y. Liu, S. Zhang, Y. Sun, Z. Guo, Y. Sheng, X. Wang, C. Luo, X. Wu, J. Wang, W. Hu, Z. Xu, Q. Sun, P. Zhou, J. Shi, Z. Sun, D. W. Zhang, and W. Bao, “Controlled doping of wafer-scale PtSe2 films for device application,” Adv. Funct. Mater. 29, 1805614 (2019).
[Crossref]

L. Wang, S. Zhang, N. McEvoy, Y. Sun, J. Huang, Y. Xie, N. Dong, X. Zhang, I. M. Kislyakov, J.-M. Nunzi, L. Zhang, and J. Wang, “Nonlinear optical signatures of the transition from semiconductor to semimetal in PtSe2,” Laser Photonics Rev. 13, 1900052 (2019).
[Crossref]

J. Lu, Q. Li, C.-W. Qiu, Y. Hong, P. Ghosh, and M. Qiu, “Nanoscale Lamb wave-driven motors in nonliquid environments,” Sci. Adv. 5, eaau8271 (2019).
[Crossref]

2018 (6)

A. Kandemir, B. Akbali, Z. Kahraman, S. V. Badalov, M. Ozcan, F. Iyikanat, and H. Sahin, “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semicond. Sci. Technol. 33, 085002 (2018).
[Crossref]

X. Miao, G. Zhang, F. Wang, H. Yan, and M. Ji, “Layer-dependent ultrafast carrier and coherent phonon dynamics in black phosphorus,” Nano Lett. 18, 3053–3059 (2018).
[Crossref]

X. Yu, P. Yu, D. Wu, B. Singh, Q. Zeng, H. Lin, W. Zhou, J. Lin, K. Suenaga, Z. Liu, and Q. J. Wang, “Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor,” Nat. Commun. 9, 1545 (2018).
[Crossref]

A. Ciarrocchi, A. Avsar, D. Ovchinnikov, and A. Kis, “Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide,” Nat. Commun. 9, 919 (2018).
[Crossref]

K. Zhang, M. Feng, Y. Ren, F. Liu, X. Chen, J. Yang, X.-Q. Yan, F. Song, and J. Tian, “Q-switched and mode-locked Er-doped fiber laser using PtSe2 as a saturable absorber,” Photon. Res. 6, 893–899 (2018).
[Crossref]

L. Tao, X. Huang, J. He, Y. Lou, L. Zeng, Y. Li, H. Long, J. Li, L. Zhang, and Y. H. Tsang, “Vertically standing PtSe2 film: a saturable absorber for a passively mode-locked Nd:LuVO4 laser,” Photon. Res. 6, 750–755 (2018).
[Crossref]

2017 (4)

M. Yan, E. Wang, X. Zhou, G. Zhang, H. Zhang, K. Zhang, W. Yao, N. Lu, S. Yang, S. Wu, T. Yoshikawa, K. Miyamoto, T. Okuda, Y. Wu, P. Yu, W. Duan, and S. Zhou, “High quality atomically thin PtSe2 films grown by molecular beam epitaxy,” 2D Mater. 4, 045015 (2017).
[Crossref]

Y. Zhao, J. Qiao, Z. Yu, P. Yu, K. Xu, S. P. Lau, W. Zhou, Z. Liu, X. Wang, W. Ji, and Y. Chai, “High-electron-mobility and air-stable 2D layered PtSe2 FETs,” Adv. Mater. 29, 1604230 (2017).
[Crossref]

Z. Guo, S. Chen, Z. Wang, Z. Yang, F. Liu, Y. Xu, J. Wang, Y. Yi, H. Zhang, L. Liao, P. K. Chu, and X.-F. Yu, “Metal-ion-modified black phosphorus with enhanced stability and transistor performance,” Adv. Mater. 29, 1703811 (2017).
[Crossref]

F. Sun, Q. Wu, Y. L. Wu, H. Zhao, C. J. Yi, Y. C. Tian, H. W. Liu, Y. G. Shi, H. Ding, X. Dai, P. Richard, and J. Zhao, “Coherent helix vacancy phonon and its ultrafast dynamics waning in topological Dirac semimetal Cd3As2,” Phys. Rev. B 95, 235108 (2017).
[Crossref]

2016 (7)

O. V. Misochko, “Pump pulse duration dependence of coherent phonon amplitudes in antimony,” J. Exp. Theor. Phys. 123, 292–302 (2016).
[Crossref]

Z.-X. Hu, X. Kong, J. Qiao, B. Normand, and W. Ji, “Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus,” Nanoscale 8, 2740–2750 (2016).
[Crossref]

Y. Zhao, J. Qiao, P. Yu, Z. Hu, Z. Lin, S. P. Lau, Z. Liu, W. Ji, and Y. Chai, “Extraordinarily strong interlayer interaction in 2D layered PtS2,” Adv. Mater. 28, 2399–2407 (2016).
[Crossref]

Z. Huang, W. Zhang, and W. Zhang, “Computational search for two-dimensional MX2 semiconductors with possible high electron mobility at room temperature,” Materials 9, 716 (2016).
[Crossref]

M. O’Brien, N. McEvoy, C. Motta, J. Zheng, N. C. Berner, J. Kotakoski, K. Elibol, T. J. Pennycook, J. C. Meyer, C. Yim, M. Abid, T. Hallam, J. F. Donegan, S. Sanvito, and G. S. Duesberg, “Raman characterization of platinum diselenide thin films,” 2D Mater. 3, 021004 (2016).
[Crossref]

C. Yim, K. Lee, N. McEvoy, M. O’Brien, S. Riazimehr, N. C. Berner, C. P. Cullen, J. Kotakoski, J. C. Meyer, M. C. Lemme, and G. S. Duesberg, “High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature,” ACS Nano 10, 9550–9558 (2016).
[Crossref]

M. Ghorbani-Asl, A. Kuc, P. Miró, and T. Heine, “A single-material logical junction based on 2D crystal PdS2,” Adv. Mater. 28, 853–856 (2016).
[Crossref]

2015 (5)

Y. Wang, L. Li, W. Yao, S. Song, J. T. Sun, J. Pan, X. Ren, C. Li, E. Okunishi, Y.-Q. Wang, E. Wang, Y. Shao, Y. Y. Zhang, H. Yang, E. F. Schwier, H. Iwasawa, K. Shimada, M. Taniguchi, Z. Cheng, S. Zhou, S. Du, S. J. Pennycook, S. T. Pantelides, and H.-J. Gao, “Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt,” Nano Lett. 15, 4013–4018 (2015).
[Crossref]

S. Zhang, N. Dong, N. McEvoy, M. O’Brien, S. Winters, N. C. Berner, C. Yim, Y. Li, X. Zhang, Z. Chen, L. Zhang, G. S. Duesberg, and J. Wang, “Direct observation of degenerate two-photon absorption and its saturation in WS2 and MoS2 monolayer and few-layer films,” ACS Nano 9, 7142–7150 (2015).
[Crossref]

Z. Guo, H. Zhang, S. Lu, Z. Wang, S. Tang, J. Shao, Z. Sun, H. Xie, H. Wang, X.-F. Yu, and P. K. Chu, “From black phosphorus to phosphorene: basic solvent exfoliation, evolution of Raman scattering, and applications to ultrafast photonics,” Adv. Func. Mater. 25, 6996–7002 (2015).
[Crossref]

X. Luo, X. Lu, G. K. W. Koon, A. H. C. Neto, B. Özyilmaz, Q. Xiong, and S. Y. Quek, “Large frequency change with thickness in interlayer breathing mode--significant interlayer interactions in few layer black phosphorus,” Nano Lett. 15, 3931–3938 (2015).
[Crossref]

J.-B. Wu, Z.-X. Hu, X. Zhang, W.-P. Han, Y. Lu, W. Shi, X.-F. Qiao, M. Ijiäs, S. Milana, W. Ji, A. C. Ferrari, and P.-H. Tan, “Interface coupling in twisted multilayer graphene by resonant Raman spectroscopy of layer breathing modes,” ACS Nano 9, 7440–7449 (2015).
[Crossref]

2014 (3)

S. Ge, X. Liu, X. Qiao, Q. Wang, Z. Xu, J. Qiu, P.-H. Tan, J. Zhao, and D. Sun, “Coherent longitudinal acoustic phonon approaching THz frequency in multilayer molybdenum disulphide,” Sci. Rep. 4, 5722 (2014).
[Crossref]

W. Zhang, Z. Huang, W. Zhang, and Y. Li, “Two-dimensional semiconductors with possible high room temperature mobility,” Nano Res. 7, 1731–1737 (2014).
[Crossref]

C. He, M. Daniel, M. Grossmann, O. Ristow, D. Brick, M. Schubert, M. Albrecht, and T. Dekorsy, “Dynamics of coherent acoustic phonons in thin films of CoSb3 and partially filled YbxCo4Sb12 skutterudites,” Phys. Rev. B 89, 174303 (2014).
[Crossref]

2013 (3)

H. Okamoto, A. Gourgout, C.-Y. Chang, K. Onomitsu, I. Mahboob, E. Y. Chang, and H. Yamaguchi, “Coherent phonon manipulation in coupled mechanical resonators,” Nat. Phys. 9, 480–484 (2013).
[Crossref]

Y. Zhao, X. Luo, H. Li, J. Zhang, P. T. Araujo, C. K. Gan, J. Wu, H. Zhang, S. Y. Quek, M. S. Dresselhaus, and Q. Xiong, “Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2,” Nano Lett. 13, 1007–1015 (2013).
[Crossref]

X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87, 115413 (2013).
[Crossref]

2012 (1)

P. H. Tan, W. P. Han, W. J. Zhao, Z. H. Wu, K. Chang, H. Wang, Y. F. Wang, N. Bonini, N. Marzari, N. Pugno, G. Savini, A. Lombardo, and A. C. Ferrari, “The shear mode of multilayer graphene,” Nat. Mater. 11, 294–300 (2012).
[Crossref]

2011 (1)

A. A. Melnikov, O. V. Misochko, and S. V. Chekalin, “Generation of coherent phonons in bismuth by ultrashort laser pulses in the visible and NIR: displacive versus impulsive excitation mechanism,” Phys. Lett. A 375, 2017–2022 (2011).
[Crossref]

2008 (1)

K. Ishioka, M. Hase, M. Kitajima, L. Wirtz, A. Rubio, and H. Petek, “Ultrafast electron-phonon decoupling in graphite,” Phys. Rev. B 77, 121402 (2008).
[Crossref]

2000 (1)

T. Mishina, K. Nitta, and Y. Masumoto, “Coherent lattice vibration of interlayer shearing mode of graphite,” Phys. Rev. B 62, 2908–2911 (2000).
[Crossref]

1999 (1)

W. Qian, H. Yan, J. J. Wang, Y. H. Zou, L. Lin, and J. L. Wu, “Observation of coherent phonons in silver nanoparticles embedded in BaO thin films,” Appl. Phys. Lett. 74, 1806–1808 (1999).
[Crossref]

1998 (1)

Al. A. Kolomenskii, H. A. Schuessler, V. G. Mikhalevich, and A. A. Maznev, “Interaction of laser-generated surface acoustic pulses with fine particles: surface cleaning and adhesion studies,” J. Appl. Phys. 84, 2404–2410 (1998).
[Crossref]

1996 (1)

N. S. Luo, P. Ruggerone, and J. P. Toennies, “Theory of surface vibrations in epitaxial thin films,” Phys. Rev. B 54, 5051–5063 (1996).
[Crossref]

1988 (1)

A. Mokhtari and J. Chesnoy, “Resonant impulsive stimulated Raman scattering,” Europhys. Lett. 5, 523–528 (1988).
[Crossref]

1986 (1)

C. Thomsen, H. T. Grahn, H. J. Maris, and J. Tauc, “Surface generation and detection of phonons by picosecond light pulses,” Phys. Rev. B 34, 4129–4138 (1986).
[Crossref]

1984 (1)

C. Thomsen, J. Strait, Z. Vardeny, H. J. Maris, J. Tauc, and J. J. Hauser, “Coherent phonon generation and detection by picosecond light pulses,” Phys. Rev. Lett. 53, 989–992 (1984).
[Crossref]

Abid, M.

M. O’Brien, N. McEvoy, C. Motta, J. Zheng, N. C. Berner, J. Kotakoski, K. Elibol, T. J. Pennycook, J. C. Meyer, C. Yim, M. Abid, T. Hallam, J. F. Donegan, S. Sanvito, and G. S. Duesberg, “Raman characterization of platinum diselenide thin films,” 2D Mater. 3, 021004 (2016).
[Crossref]

Akbali, B.

A. Kandemir, B. Akbali, Z. Kahraman, S. V. Badalov, M. Ozcan, F. Iyikanat, and H. Sahin, “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semicond. Sci. Technol. 33, 085002 (2018).
[Crossref]

Albrecht, M.

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[Crossref]

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Figures (7)

Fig. 1.
Fig. 1. AFM images of (a) 2 L-, (b) 5 L-, (c) 8 L-PtSe2; the insets show the height profile. (d) The layer-dependent Raman spectra of PtSe2. (e) The peak positions of Eg, A1g, and LO modes and (f) the intensity ratio of A1g/Eg with the increasing number of layers. (g) The layer-dependent Tauc plots of PtSe2.
Fig. 2.
Fig. 2. (a) Transmission signal of 15 L-PtSe2 (gray dots) and the fitting curves with/without oscillations (black/red line). The inset is the fast Fourier transform (FFT) of the oscillation signal. (b) The diagram of the oscillations decomposed into two different sinusoidal decaying components. Mode 1 corresponds to the higher frequency (0.15 THz) and Mode 2 corresponds to the lower one (0.05 THz). (c) The oscillation experimental data and the fitting results of PtSe2 with different layers. (d) The FFT of all oscillation signals.
Fig. 3.
Fig. 3. (a) Low-frequency Raman spectra of 2 L-, 5 L-, 8 L-PtSe2. The green region is the laser line. (b) The comparison of LBMs obtained from low-frequency Raman spectroscopy, coherent phonon method, and theoretical calculation. The polarization behavior of Raman amplitude of (c) Mode 1, (d) Eg and A1g modes of 2 L-PtSe2.
Fig. 4.
Fig. 4. Diagram of vibrational displacements of the layer-breathing mode and the standing wave mode in PtSe2.
Fig. 5.
Fig. 5. Layer-dependent oscillations of (a) Mode 1 (LBM) and (b) Mode 2 (SWM) with the fitting curves. The blue hollow circles in (a) are low-frequency Raman peak positions. The insets: the black and sky-blue balls represent Pt and Se atoms, respectively. Each arrow points to the direction of the movement of that layer.
Fig. 6.
Fig. 6. AFM images of PtSe2 with (a) 10 L, (b) 15 L, (c) 17 L, and (d) 23 L.
Fig. 7.
Fig. 7. Reflection (R), transmission (T), and absorption (A) spectra from 400 nm to 1100 nm of PtSe2 films with (a) 2 L, (b) 5 L, (c) 8 L, (d) 10 L, (e) 15 L, (f) 17 L, and (g) 23 L. The absorption spectra are calculated by A=1RT. (h) The Tauc plots of layer-dependent PtSe2. (i) The bandgap of each film obtained from Tauc plots. The bandgaps are approximately 1.32 eV (2 L), 0.76 eV (5 L), 0.44 eV (8 L), 0.18 eV (10 L), and 0 eV (15 L, 17 L, and 23 L), respectively.

Tables (3)

Tables Icon

Table 1. Vibrational Frequencies in the Unit of Terahertz (THz), Picosecond (ps), and cm1 and the Decay Times of These Two Modes in 2–23 L PtSe2

Tables Icon

Table 2. Thickness, Linear Absorption Coefficient α, and Penetration Depth ξ=α1 of 2–23 L PtSe2

Tables Icon

Table 3. Other Fitting Parameters from Eq. (1) of 2–23 L PtSe2

Equations (3)

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ΔTT=i=1,2Aiexp(tτi)+j=1,2Bjexp(tτj)×sin(ωjt+ϕj),
ωN=K2μπ2c2[1cos(m1)πN],
T=4d/V,