Abstract

Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers

Robert Kernke, Martin Hempel, Jens W. Tomm, Thomas Elsaesser, Bernhard Stojetz, Harald König, and Uwe Strauß
Opt. Mater. Express 6(6) 2139-2146 (2016)

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, and Piotr Perlin
Photon. Res. 5(2) A30-A34 (2017)

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann, and H. T. Grahn
Opt. Express 22(3) 3334-3348 (2014)

References

  • View by:
  • |
  • |
  • |

  1. T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz,” Rep. Prog. Phys. 80(10), 106501 (2017).
    [Crossref]
  2. S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
    [Crossref]
  3. H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
    [Crossref]
  4. S. M. Abbott, “Measurement of spatial distribution of long-wavelength radiation from GaAlAs injection lasers,” Appl. Phys. Lett. 34(11), 766–768 (1979).
    [Crossref]
  5. M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
    [Crossref]
  6. M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
    [Crossref]
  7. R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, and U. Strauß, “Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers,” Opt. Mater. Express 6(6), 2139–2146 (2016).
    [Crossref]
  8. F. Girardin and G. H. Duan, “Characterization of semiconductor lasers by spontaneous emission measurements,” IEEE J. Sel. Top. Quantum Electron. 3(2), 461–470 (1997).
    [Crossref]
  9. https://www.lasershop.de/laserquellen/laserdioden/blaue-laserdioden-405nm-445nm-450nm-460nm/
  10. G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
    [Crossref]
  11. https://www.osram.com/os/ecat/Metal%20Can%C2%AE%20TO56%20PL%20TB450B/com/en/class_pim_web_catalog_103489/global/prd_pim_device_2220053/ .
  12. K. Motoki, “Development of Gallium Nitride Substrates,” SEI Tech. Rev. 70, 28–35 (2010).
  13. M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
    [Crossref]
  14. M. A. Reshchikov, “Evaluation of GaN by photoluminescence measurement,” Phys. Status Solidi C 8(7-8), 2136–2138 (2011).
    [Crossref]
  15. https://www.python.org/
  16. J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
    [Crossref]
  17. J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
    [Crossref]
  18. T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
    [Crossref]
  19. S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
    [Crossref]
  20. N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
    [Crossref]

2018 (1)

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

2017 (2)

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz,” Rep. Prog. Phys. 80(10), 106501 (2017).
[Crossref]

2016 (1)

2015 (2)

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

2014 (1)

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

2011 (1)

M. A. Reshchikov, “Evaluation of GaN by photoluminescence measurement,” Phys. Status Solidi C 8(7-8), 2136–2138 (2011).
[Crossref]

2010 (1)

K. Motoki, “Development of Gallium Nitride Substrates,” SEI Tech. Rev. 70, 28–35 (2010).

2009 (1)

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

2008 (2)

N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
[Crossref]

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

2005 (1)

M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]

2003 (1)

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

1997 (1)

F. Girardin and G. H. Duan, “Characterization of semiconductor lasers by spontaneous emission measurements,” IEEE J. Sel. Top. Quantum Electron. 3(2), 461–470 (1997).
[Crossref]

1979 (1)

S. M. Abbott, “Measurement of spatial distribution of long-wavelength radiation from GaAlAs injection lasers,” Appl. Phys. Lett. 34(11), 766–768 (1979).
[Crossref]

1978 (1)

H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
[Crossref]

Abbott, S. M.

S. M. Abbott, “Measurement of spatial distribution of long-wavelength radiation from GaAlAs injection lasers,” Appl. Phys. Lett. 34(11), 766–768 (1979).
[Crossref]

Adams, A. R.

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

Bettiati, M.

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

BouSanayeh, M.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Bugge, F.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Corbett, B.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Crump, P.

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

Deubert, S.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Duan, G. H.

F. Girardin and G. H. Duan, “Characterization of semiconductor lasers by spontaneous emission measurements,” IEEE J. Sel. Top. Quantum Electron. 3(2), 461–470 (1997).
[Crossref]

Elsaesser, T.

R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, and U. Strauß, “Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers,” Opt. Mater. Express 6(6), 2139–2146 (2016).
[Crossref]

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Erbert, G.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Felger, M.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Forchel, A.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Girardin, F.

F. Girardin and G. H. Duan, “Characterization of semiconductor lasers by spontaneous emission measurements,” IEEE J. Sel. Top. Quantum Electron. 3(2), 461–470 (1997).
[Crossref]

Gomez-Iglesias, A.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Hempel, M.

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, and U. Strauß, “Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers,” Opt. Mater. Express 6(6), 2139–2146 (2016).
[Crossref]

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

Holc, K.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

Imade, M.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Imai, H.

H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
[Crossref]

Isozumi, K.

H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
[Crossref]

Kernke, R.

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, and U. Strauß, “Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers,” Opt. Mater. Express 6(6), 2139–2146 (2016).
[Crossref]

Kimoto, T.

N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
[Crossref]

Köhler, K.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

König, H.

Landesman, J.-P.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

LeClech, J.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Lienau, C.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Lock, D. A.

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

Lükens, G.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

Lyons, L. J.

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

Mclnerney, J. G.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Mori, Y.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Morkoc, H.

M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]

Motoki, K.

K. Motoki, “Development of Gallium Nitride Substrates,” SEI Tech. Rev. 70, 28–35 (2010).

Moustakas, T. D.

T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz,” Rep. Prog. Phys. 80(10), 106501 (2017).
[Crossref]

Mukherjee, J.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Mura, G.

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

Nakamura, S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Nakwaski, W.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Paiella, R.

T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz,” Rep. Prog. Phys. 80(10), 106501 (2017).
[Crossref]

Pimputkar, S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Pomraenke, R.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Reithmaier, J. P.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Reshchikov, M. A.

M. A. Reshchikov, “Evaluation of GaN by photoluminescence measurement,” Phys. Status Solidi C 8(7-8), 2136–2138 (2011).
[Crossref]

M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]

Reufer, M.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Rieprich, J.

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

Sarzala, R. P.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

Schwarz, U. T.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

Speck, J. S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Stojetz, B.

Strauß, U.

Suda, J.

N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
[Crossref]

Suihkonen, S.

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Sweeney, S. J.

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

Takusagawa, M.

H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
[Crossref]

Tomm, J. W.

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, and U. Strauß, “Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers,” Opt. Mater. Express 6(6), 2139–2146 (2016).
[Crossref]

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Vanzi, M.

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

Vasa, P.

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Wagner, J.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

Watanabe, N.

N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
[Crossref]

Weig, T.

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

Winterfeldt, M.

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

Yue, F.

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

Ziegler, M.

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

Appl. Phys. Lett. (3)

H. Imai, K. Isozumi, and M. Takusagawa, “Deep level associated with the slow degradation of GaAlAs DH laser diodes,” Appl. Phys. Lett. 33(4), 330–332 (1978).
[Crossref]

S. M. Abbott, “Measurement of spatial distribution of long-wavelength radiation from GaAlAs injection lasers,” Appl. Phys. Lett. 34(11), 766–768 (1979).
[Crossref]

M. Ziegler, R. Pomraenke, M. Felger, J. W. Tomm, P. Vasa, C. Lienau, M. BouSanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, and G. Erbert, “Infrared emission from the substrate of GaAs-based semiconductor lasers,” Appl. Phys. Lett. 93(4), 041101 (2008).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

F. Girardin and G. H. Duan, “Characterization of semiconductor lasers by spontaneous emission measurements,” IEEE J. Sel. Top. Quantum Electron. 3(2), 461–470 (1997).
[Crossref]

S. J. Sweeney, L. J. Lyons, A. R. Adams, and D. A. Lock, “Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1325–1332 (2003).
[Crossref]

J. Appl. Phys. (4)

M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]

J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, and P. Crump, “Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers,” J. Appl. Phys. 123(12), 125703 (2018).
[Crossref]

J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, and R. P. Sarzala, “Microthermography of diode lasers: The impact of light propagation on image formation,” J. Appl. Phys. 105(1), 014502 (2009).
[Crossref]

N. Watanabe, T. Kimoto, and J. Suda, “The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C,” J. Appl. Phys. 104(10), 106101 (2008).
[Crossref]

J. Cryst. Growth (1)

S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura, “Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals,” J. Cryst. Growth 432, 49–53 (2015).
[Crossref]

Opt. Mater. Express (1)

Phys. Status Solidi C (1)

M. A. Reshchikov, “Evaluation of GaN by photoluminescence measurement,” Phys. Status Solidi C 8(7-8), 2136–2138 (2011).
[Crossref]

Phys. Status Solidi RRL (1)

G. Mura, M. Vanzi, M. Hempel, and J. W. Tomm, “Analysis of GaN based high-power diode lasers after singular degradation events,” Phys. Status Solidi RRL 11(7), 1700132 (2017).
[Crossref]

Proc. SPIE (2)

T. Weig, G. Lükens, K. Holc, K. Köhler, J. Wagner, and U. T. Schwarz, “Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes,” Proc. SPIE 9002, 90020K (2014).
[Crossref]

M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, and T. Elsaesser, “Short-wavelength infrared defect emission as probe for degradation effects in diode lasers,” Proc. SPIE 9382, 93821G (2015).
[Crossref]

Rep. Prog. Phys. (1)

T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz,” Rep. Prog. Phys. 80(10), 106501 (2017).
[Crossref]

SEI Tech. Rev. (1)

K. Motoki, “Development of Gallium Nitride Substrates,” SEI Tech. Rev. 70, 28–35 (2010).

Other (3)

https://www.osram.com/os/ecat/Metal%20Can%C2%AE%20TO56%20PL%20TB450B/com/en/class_pim_web_catalog_103489/global/prd_pim_device_2220053/ .

https://www.python.org/

https://www.lasershop.de/laserquellen/laserdioden/blaue-laserdioden-405nm-445nm-450nm-460nm/

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1.
Fig. 1. Emission spectra taken from the front facet of a device at different operation currents. (a) Primary emission. (b) Yellow and infrared emissions. The vertical line marks the edge of the long-pass filter. The PL spectrum is taken from the GaN substrate; dashed curve.
Fig. 2.
Fig. 2. (a) Map of the yellow emission (b/w, original data) taken from the front facet. (b) Scheme illustrating the geometry of the device and the coordinate system that is used in the entire manuscript. (c) Normalized characteristics ‘yellow emission-versus-operation current’ taken at different locations; see symbols in (a) and (e). (d, e) Emission profiles extracted from maps.
Fig. 3.
Fig. 3. Comparison between modelled (red) and at 200 mA measured emission profiles. The parameters are given in the text.