Abstract

We report the uniaxial anisotropic optical constants of wurtzite-type a-axis oriented AlN films deposited on Si (100) using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 °C) using the spectroscopic ellipsometry (SE) technique. The thickness and roughness of these films are determined from the regression analysis of SE data, which are corroborated using TEM and AFM techniques. Highly oriented a-axis AlN film grown at 400 °C, exhibits high n and low k at 210 nm (deep-UV region) with small birefringence (−0.01) and dichroism (0.03) near the band edge. All these AlN films exhibit transparent nature from near-infrared (NIR) to 354 nm, where optical band gap energies vary between 5.7 to 6.1 eV.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
  10. A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
    [Crossref]
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    [Crossref]
  14. W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
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    [Crossref]
  18. P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
    [Crossref]
  19. P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
    [Crossref]
  20. P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
    [Crossref]
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    [Crossref]
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    [Crossref]
  23. M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
    [Crossref]
  24. M. Gaillet, L. Yan, and E. Teboul, “Optical characterizations of complete TFT–LCD display devices by phase modulated spectroscopic ellipsometry,” Thin Solid Films 516, 170–174 (2007).
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    [Crossref]
  26. T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
    [Crossref]
  27. P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
    [Crossref]
  28. S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
    [Crossref]
  29. Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
    [Crossref]
  30. G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
    [Crossref]
  31. F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
    [Crossref]
  32. K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
    [Crossref]
  33. J. A. Thornton, “Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings,” J. Vac. Sci. Technol. 11, 666–670 (1974).
    [Crossref]
  34. L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
    [Crossref]
  35. J. Kar, G. Bose, and S. Tuli, “Effect of annealing on DC sputtered aluminum nitride films,” Surf. Coatings Technol. 198, 64–67 (2005).
    [Crossref]

2017 (2)

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

2015 (2)

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

2014 (2)

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

2013 (1)

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

2012 (2)

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, “Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition,” J. Vac. Sci. Technol. A 30, 021506 (2012).
[Crossref]

2011 (2)

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

2010 (4)

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
[Crossref]

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Y. Taniyasu and M. Kasu, “Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation,” Appl. Phys. Lett. 96, 221110 (2010).
[Crossref]

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

2007 (2)

M. Gaillet, L. Yan, and E. Teboul, “Optical characterizations of complete TFT–LCD display devices by phase modulated spectroscopic ellipsometry,” Thin Solid Films 516, 170–174 (2007).
[Crossref]

K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
[Crossref]

2006 (3)

F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
[Crossref]

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

2005 (4)

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

J. Kar, G. Bose, and S. Tuli, “Effect of annealing on DC sputtered aluminum nitride films,” Surf. Coatings Technol. 198, 64–67 (2005).
[Crossref]

2004 (2)

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

2003 (4)

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

1999 (1)

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

1979 (1)

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

1974 (1)

J. A. Thornton, “Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings,” J. Vac. Sci. Technol. 11, 666–670 (1974).
[Crossref]

Ajikumar, P.

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Alevli, M.

M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, “Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition,” J. Vac. Sci. Technol. A 30, 021506 (2012).
[Crossref]

Allidi, G.

F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
[Crossref]

Alnot, P.

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

Andrade, E.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Aoki, T.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Assouar, M. B.

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

Balakrishnan, G.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Ballif, C.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Benedict, L.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Biyikli, N.

M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, “Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition,” J. Vac. Sci. Technol. A 30, 021506 (2012).
[Crossref]

Boatner, L.

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

Boatner, L. A.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

Bose, G.

J. Kar, G. Bose, and S. Tuli, “Effect of annealing on DC sputtered aluminum nitride films,” Surf. Coatings Technol. 198, 64–67 (2005).
[Crossref]

Bridou, F.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Budai, J.

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

Budai, J. D.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

Cardona, M.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Castillon, F.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Chen, C.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Chen, H.-R.

K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
[Crossref]

Chen, J.

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Chen, J.-H.

K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
[Crossref]

Chen, L.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Chiu, K.-H.

K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
[Crossref]

Chivukula, V.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Ciplys, D.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Cobet, C.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Dalmau, R. F.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Dash, S.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

De Wolf, S.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Donmez, I.

M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, “Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition,” J. Vac. Sci. Technol. A 30, 021506 (2012).
[Crossref]

Durand, O.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Easwarakhanthan, T.

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

Esser, N.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Eypert, C.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Farias, M.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Filipic, M.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Flewitt, A. J.

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

Freitas, J. A.

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

Fukuhara, N.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Fukui, K.

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

Gaillet, M.

M. Gaillet, L. Yan, and E. Teboul, “Optical characterizations of complete TFT–LCD display devices by phase modulated spectroscopic ellipsometry,” Thin Solid Films 516, 170–174 (2007).
[Crossref]

Gao, J.

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

Gaska, R.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Ginsburg, E.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Glembocki, O. J.

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

Gobsch, G.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Goldhahn, R.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Guo, Q.

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

Hata, M.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Heiras, J.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Huang, L.

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

Huang, R.-S.

K.-H. Chiu, J.-H. Chen, H.-R. Chen, and R.-S. Huang, “Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator,” Thin Solid Films 515, 4819–4825 (2007).
[Crossref]

Inoue, T.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Janicek, P.

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

Jellison, G.

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

Jellison, G. E.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

Jeong, B.-S.

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

Jiang, H.-X.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Jiang, L.

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

Jiang, W.

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Jose, F.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Kang, J.

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Kang, M.-I.

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
[Crossref]

Kar, J.

J. Kar, G. Bose, and S. Tuli, “Effect of annealing on DC sputtered aluminum nitride films,” Surf. Coatings Technol. 198, 64–67 (2005).
[Crossref]

Karimi, A.

F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
[Crossref]

Kasu, M.

Y. Taniyasu and M. Kasu, “Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation,” Appl. Phys. Lett. 96, 221110 (2010).
[Crossref]

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Khan, M. A.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Kim, S. W.

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
[Crossref]

Kim, T.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Kim, Y.-G.

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
[Crossref]

Kiran, M. S. R. N.

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Knowles, A.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Kuppusami, P.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Lantier, R.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Lau, S.

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

Lebedev, V.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Li, S.

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Lin, J. Y.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Lin, W.

W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. 32, 891–895 (2010).
[Crossref]

Loper, P.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Ma, Q.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Machorro, R.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Mahmood, A.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Mangamma, G.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

Mathews, T.

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

McGuire, M. A.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

Medjani, F.

F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
[Crossref]

Misawa, S.

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

Mistrik, J.

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

Modreanu, M.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Mohandas, E.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Moon, S.-J.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Morkoc, H.

H. Morkoc, Handbook of Nitride Semiconductors and Devices, Vol. 1: Materials Properties, Physics and Growth (Wiley-VCH, 2008).

Muhl, S.

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

Nakarmi, M. L.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Naudin, C.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Niang, K. M.

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

Niesen, B.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Norton, D.

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

Ogawa, H.

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

Osada, T.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Ozgit, C.

M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, “Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition,” J. Vac. Sci. Technol. A 30, 021506 (2012).
[Crossref]

Palka, K.

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

Panda, P.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

Piekh, S.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Pigeat, P.

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

Raj, B.

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Ramamurty, U.

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Ramaseshan, R.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Rao, V. R.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Raut, N.

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Ravet, M.-F.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Ravi, N.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

Richter, W.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Rizzi, A.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Ryu, J.-W.

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
[Crossref]

Sancho-Parramon, J.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Sanjinés, R.

F. Medjani, R. Sanjinés, G. Allidi, and A. Karimi, “Effect of substrate temperature and bias voltage on the crystallite orientation in rf magnetron sputtered AlN thin films,” Thin Solid Films 515, 260–265 (2006).
[Crossref]

Sastikumar, D.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Sazawa, H.

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Schlesser, R.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Schowalter, L. J.

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

Schubert, E. F.

E. F. Schubert, Light Emitting Diodes, 2nd ed. (Cambridge University Press, 2006).
[Crossref]

Sereika, A.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Servet, B.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Shen, W.

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

Shim, D. S.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Shirley, E. L.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Shokhovets, S.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

Shur, M.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Silveira, E.

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

Singh, D. J.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
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Sitar, Z.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Skromme, B. J.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Slack, G. A.

E. Silveira, J. A. Freitas, O. J. Glembocki, G. A. Slack, and L. J. Schowalter, “Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements,” Phys. Rev. B 71, 041201 (2005).
[Crossref]

Song, J.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Specht, E. D.

G. E. Jellison, M. A. McGuire, L. A. Boatner, J. D. Budai, E. D. Specht, and D. J. Singh, “Spectroscopic dielectric tensor of monoclinic crystals: CdWO4,” Phys. Rev. B 84, 195439 (2011).
[Crossref]

Sravani, B.

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

Stchakovsky, M.

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

Stuckelberger, M.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Suematsu, H.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

Sun, W.

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Sundari, S. T.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Suzuki, K.

P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
[Crossref]

Talalyevsky, A.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Taniyasu, Y.

Y. Taniyasu and M. Kasu, “Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation,” Appl. Phys. Lett. 96, 221110 (2010).
[Crossref]

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Tay, B.

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

Teboul, E.

M. Gaillet, L. Yan, and E. Teboul, “Optical characterizations of complete TFT–LCD display devices by phase modulated spectroscopic ellipsometry,” Thin Solid Films 516, 170–174 (2007).
[Crossref]

Thirumurugesan, R.

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Thornton, J. A.

J. A. Thornton, “Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings,” J. Vac. Sci. Technol. 11, 666–670 (1974).
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Topic, M.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Tripura Sundari, S.

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
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Tuli, S.

J. Kar, G. Bose, and S. Tuli, “Effect of annealing on DC sputtered aluminum nitride films,” Surf. Coatings Technol. 198, 64–67 (2005).
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Tyagi, A.

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Tyagi, A. K.

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Wang, L.-P.

L.-P. Wang, D. S. Shim, Q. Ma, V. R. Rao, E. Ginsburg, and A. Talalyevsky, “Characterization of polycrystalline aln films using variable-angle spectroscopic ellipsometry,” J. Vac. Sci. Technol. A 23, 1284–1289 (2005).
[Crossref]

Werner, J.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Wethkamp, T.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Wilmers, K.

L. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, “Dielectric function of wurtzite gan and AlN thin films,” Solid State Commun. 112, 129–133 (1999).
[Crossref]

Yamashita, H.

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

Yan, L.

M. Gaillet, L. Yan, and E. Teboul, “Optical characterizations of complete TFT–LCD display devices by phase modulated spectroscopic ellipsometry,” Thin Solid Films 516, 170–174 (2007).
[Crossref]

Yang, J.

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

Yoshida, S.

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

Yum, J.-H.

P. Loper, M. Stuckelberger, B. Niesen, J. Werner, M. Filipic, S.-J. Moon, J.-H. Yum, M. Topic, S. De Wolf, and C. Ballif, “Complex refractive index spectra of Ch3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry,” J. Phys. Chem. Lett. 6, 66–71 (2015).
[Crossref]

Zhao, Z.

Z. Zhao, B. Tay, L. Huang, S. Lau, and J. Gao, “Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc,” Opt. Mater. 27, 465–469 (2004).
[Crossref]

AIP Conf. Proc. (1)

P. Panda, B. Sravani, R. Ramaseshan, N. Ravi, F. Jose, S. Dash, and A. K. Tyagi, “Growth and characterization of highly oriented AlN films by DC reactive sputtering,” AIP Conf. Proc. 1665, 080064 (2015).
[Crossref]

Appl. Phys. Express (1)

T. Aoki, N. Fukuhara, T. Osada, H. Sazawa, M. Hata, and T. Inoue, “High-performance gaas-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ aln passivation by metalorganic chemical vapor deposition,” Appl. Phys. Express 7, 106502 (2014).
[Crossref]

Appl. Phys. Lett. (4)

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge exciton states in aln single crystals and epitaxial layers,” Appl. Phys. Lett. 85, 4334–4336 (2004).
[Crossref]

V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, “Algan based highly sensitive radio-frequency UV sensor,” Appl. Phys. Lett. 96, 163504 (2010).
[Crossref]

Y. Taniyasu and M. Kasu, “Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation,” Appl. Phys. Lett. 96, 221110 (2010).
[Crossref]

F. Jose, R. Ramaseshan, S. Tripura Sundari, S. Dash, A. K. Tyagi, M. S. R. N. Kiran, and U. Ramamurty, “Nanomechanical and optical properties of highly a-axis oriented AlN films,” Appl. Phys. Lett. 101, 254102 (2012).
[Crossref]

Appl. Surf. Sci. (3)

M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, and M.-F. Ravet, “Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films,” Appl. Surf. Sci. 253, 328–334 (2006).
[Crossref]

P. Janicek, K. M. Niang, J. Mistrik, K. Palka, and A. J. Flewitt, “Spectroscopic ellipsometry characterization of ZnO: Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering,” Appl. Surf. Sci. 421, 557–564 (2017).
[Crossref]

S. T. Sundari, N. Raut, T. Mathews, P. Ajikumar, S. Dash, A. Tyagi, and B. Raj, “Ellipsometric studies on TiO2 thin films synthesized by spray pyrolysis technique,” Appl. Surf. Sci. 257, 7399–7404 (2011).
[Crossref]

Ceram. Int. (1)

G. Balakrishnan, S. T. Sundari, R. Ramaseshan, R. Thirumurugesan, E. Mohandas, D. Sastikumar, P. Kuppusami, T. Kim, and J. Song, “Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films,” Ceram. Int. 39, 9017–9023 (2013).
[Crossref]

Diam. Relat. Mater. (1)

A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F. Castillon, M. Farias, and E. Andrade, “Optical and surface analysis of DC-reactive sputtered AlN films,” Diam. Relat. Mater. 12, 1315–1321 (2003).
[Crossref]

J. Appl. Phys. (6)

H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, “Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region,” J. Appl. Phys. 50, 896–898 (1979).
[Crossref]

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94, 307–312 (2003).
[Crossref]

S. Tripura Sundari, R. Ramaseshan, F. Jose, S. Dash, and A. K. Tyagi, “Investigation of temperature dependent dielectric constant of a sputtered tin thin film by spectroscopic ellipsometry,” J. Appl. Phys. 115, 033516 (2014).
[Crossref]

T. Easwarakhanthan, M. B. Assouar, P. Pigeat, and P. Alnot, “Optical models for radio-frequency-magnetron reactively sputtered AlN films,” J. Appl. Phys. 98, 073531 (2005).
[Crossref]

G. Jellison, L. Boatner, J. Budai, B.-S. Jeong, and D. Norton, “Spectroscopic ellipsometry of thin film and bulk anatase (TiO2),” J. Appl. Phys. 93, 9537–9541 (2003).
[Crossref]

L. Jiang, W. Shen, H. Ogawa, and Q. Guo, “Temperature dependence of the optical properties in hexagonal AlN,” J. Appl. Phys. 94, 5704–5709 (2003).
[Crossref]

J. Korean Phys. Soc. (1)

M.-I. Kang, S. W. Kim, Y.-G. Kim, and J.-W. Ryu, “Dependence of the optical anisotropy of ZnO thin films on the structural properties,” J. Korean Phys. Soc. 57, 389–394 (2010).
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P. Panda, R. Ramaseshan, N. Ravi, G. Mangamma, F. Jose, S. Dash, K. Suzuki, and H. Suematsu, “Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique,” Mater. Chem. Phys. 200, 78–84 (2017).
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Figures (9)

Fig. 1
Fig. 1 X-TEM and SAED (inset) of AlN films grown at 400 °C.
Fig. 2
Fig. 2 Schematic diagram of a phase modulated spectroscopic ellipsometry experiment setup.
Fig. 3
Fig. 3 Measured experimental ellipsometric parameters as Is and Ic and the corresponding fit of AlN films grown at 35 °C (a, b) and 400 °C (c, d).
Fig. 4
Fig. 4 Thickness of AlN films measured by SE and TEM.
Fig. 5
Fig. 5 A plot of (a) n, (b) n refractive index and (c) k and (d) k‖ extinction coefficient against to energy of AlN films for different Ts.
Fig. 6
Fig. 6 The variation of n and k value at 210 nm and the crystallite size (inset) of AlN films with Ts.
Fig. 7
Fig. 7 Optical band gaps of AlN films with Ts for k and k.
Fig. 8
Fig. 8 The dispersion of (a) birefringence (Δn) (b) and dichroism (Δk) with energy at different Ts.
Fig. 9
Fig. 9 Dispersion parameters derived from the fitting with Ts.

Equations (6)

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ρ = r p r s = e i Δ tan Ψ
I s = sin ( 2 Ψ ) sin ( Δ ) and I c = sin ( 2 Ψ ) cos ( Δ )
n = n + j = 1 N B j ( ω ω j ) + C j ( ω ω j ) 2 + Γ j 2
K = { j = 1 N f j ( ω ω g ) 2 ( ω ω j ) 2 + Γ j 2 : ω > ω g 0 : ω ω g
{ B j = f j Γ j [ Γ j 2 ( ω j ω g ) 2 ] C j = 2 f j Γ j ( ω j ω g )
χ 2 = 1 2 N P 1 i = 1 N [ ( I s , m i I s , c i 10 2 ) 2 + ( I c , m i I c , c i 10 2 ) 2 ]