Abstract

This erratum corrects a typographical error which appeared in Optica 7, 336 (2020). [CrossRef]  

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. H. Park, C. Zhang, M. A. Tran, and T. Komljenovic, “Heterogeneous silicon nitride photonics,” Optica 7, 336 (2020).
    [Crossref]

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Figures (1)

Fig. 1.
Fig. 1. (a) World’s first heterogeneous GaAs-on-SiN lasers coupled to passive SiN waveguide and routed to on-chip photodetector (PD) through an S-bend in passive waveguide during wafer-scale testing. (b) Lasing emission spectrum around 990 nm. (c) SiN waveguide coupled power of few identical lasers showing very high uniformity. Output powers are measured continuous wave at room temperature. (d) Measured and simulated coupling efficiency of 1st generation of lasers and simulations for improved designs.

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