Abstract

We solve one of the key photonic challenges–bringing wafer-scale electrically pumped optical sources to a silicon nitride photonic platform with the world’s first demonstration of electrically pumped heterogeneous GaAs-on-SiN lasers operating at a wavelength below the Si bandgap.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Corrections

Hyundai Park, Chong Zhang, Minh A. Tran, and Tin Komljenovic, "Heterogeneous silicon nitride photonics: erratum," Optica 7, 425-425 (2020)
https://www.osapublishing.org/optica/abstract.cfm?uri=optica-7-5-425

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References

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2020 (1)

2019 (4)

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

B. Desiatov, A. Shams-Ansari, M. Zhang, C. Wang, and M. Lončar, Optica 6, 380 (2019).
[Crossref]

R. Fan, C. L. Wu, Y. Y. Lin, C. Y. Liu, P. S. Hwang, C. W. Liu, J. Qiao, M. H. Shih, Y. J. Hung, Y. J. Chiu, and A. K. Chu, Opt. Lett. 44, 1512 (2019).
[Crossref]

2018 (1)

2017 (1)

2006 (1)

Akulova, Y.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Berggren, K.

Bowers, J. E.

Byrd, M. J.

Chiaverini, J.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Chiu, Y. J.

Choi, H.

Chu, A. K.

Cohen, O.

Coolbaugh, D.

Desiatov, B.

Doussiere, P.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Driscoll, J. B.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Elsinger, L.

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

Fan, R.

Fang, A. W.

Fanto, M.

Guo, J.

Haq, B.

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

Hung, Y. J.

Hwang, P. S.

Jin, W.

Jones, R.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, Opt. Express 14, 9203 (2006).
[Crossref]

Kennedy, M. J.

Kharas, D.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Kim, J.

Komljenovic, T.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Kong, W.

Kuyken, B.

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

Li, N.

Lin, W.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Lin, Y. Y.

Liu, C. W.

Liu, C. Y.

Loh, W.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Loncar, M.

Lu, T.

Mehta, K. K.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Moon, H.

Morton, P. A.

Mouradian, S.

Op de Beeck, C.

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

Paniccia, M. J.

Park, H.

Peters, J. D.

Poulton, C. V.

Qiao, J.

Ram, R. J.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Raval, M.

Roelkens, G.

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

Sage, J.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Selvidge, J.

Shams-Ansari, A.

Shih, M. H.

Sorace-Agaskar, C.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Steidle, J.

Su, Z.

Thomas, P.

Timurdogan, E.

Vermeulen, D.

Wang, C.

Watts, M. R.

West, G. N.

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

Wu, C. L.

Xiang, C.

Yu, H.

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Zhang, M.

Zhu, D.

APL Photon. (1)

G. N. West, W. Loh, D. Kharas, C. Sorace-Agaskar, K. K. Mehta, J. Sage, J. Chiaverini, and R. J. Ram, APL Photon. 4, 026101 (2019).
[Crossref]

IEEE Nanotechnol. Mag. (1)

R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
[Crossref]

Opt. Express (2)

Opt. Lett. (2)

Optica (2)

Other (1)

C. Op de Beeck, L. Elsinger, B. Haq, G. Roelkens, and B. Kuyken, Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest (Optical Society of America, 2019), paper FTu6B.1.

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Figures (2)

Fig. 1.
Fig. 1. (a) Simulation of fundamental modes in GaAs laser and SiN waveguide (WG) and SEMs of corresponding regions. (b) Fabricated 100 mm wafer. (c) Coupling efficiency Monte Carlo simulation at 900 nm. Within typical lithographic tolerance (${\sim}\;{ \pm 0.1}\;{\unicode{x00B5}{\rm m}}$), the loss variation is ${ \lt }{0.2}\;{\rm dB}$. (d) Transition loss in 400–1000 nm range. Design 1 targeted fully optimized performance, while Design 2 targeted simpler process flow.
Fig. 2.
Fig. 2. (a) World’s first heterogeneous GaAs-on-SiN lasers coupled to passive SiN waveguide and routed to on-chip photodetector (PD) through an S-bend in passive waveguide during wafer-scale testing. (b) Lasing emission spectrum around 990 nm. (c) SiN waveguide coupled power of few identical lasers showing very high uniformity. Output powers are measured continuous wave at room temperature. (d) Measured and simulated coupling efficiency of 1st generation of lasers and simulations for improved designs.

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