Abstract

The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024 (1997).
    [Crossref]
  2. C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
    [Crossref]
  3. J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
    [Crossref]
  4. Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
    [Crossref]
  5. S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
    [Crossref]
  6. L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
    [Crossref]
  7. F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
    [Crossref]
  8. W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
    [Crossref]
  9. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
    [Crossref]
  10. R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
    [Crossref]
  11. Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
    [Crossref]
  12. M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
    [Crossref]
  13. I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
    [Crossref]
  14. V. Fiorentini, “Origin of the efficient light emission from inversion domain boundaries in GaN,” Appl. Phys. Lett. 82, 1182–1184 (2003).
    [Crossref]
  15. J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
    [Crossref]
  16. H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
    [Crossref]
  17. S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
    [Crossref]

2018 (3)

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

2017 (4)

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

2016 (2)

C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
[Crossref]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

2015 (1)

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

2011 (1)

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

2010 (1)

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

2007 (1)

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

2003 (2)

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

V. Fiorentini, “Origin of the efficient light emission from inversion domain boundaries in GaN,” Appl. Phys. Lett. 82, 1182–1184 (2003).
[Crossref]

2001 (1)

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

1997 (1)

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

Ajia, I. A.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Amano, H.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Ambacher, O.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Baines, Y.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Beam, E.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Belekov, E.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Bernardini, F.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

Borga, M.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Bouchet, T.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Brown, D.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Callsen, G.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Chalker, P. R.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Charles, M.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Chen, C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Chen, J.-T.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Chen, K. J.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Chen, L.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Chowdhury, N.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Chu, R.

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P. R. Chalker, M. Charles, K. J. Chen, N. Chowdhury, and R. Chu, “The 2018 GaN power electronics roadmap,” J. Phys. D 51, 163001 (2018).
[Crossref]

Collazo, R.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Dai, J.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

DenBaars, S.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Deng, G.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Dimitrov, R.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Dreyer, C. E.

C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
[Crossref]

Edwards, P. R.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Eickhoff, M.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Fabrizio, E. D.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Fang, Z.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Feng, M.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Feng, Z. C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Fichtenbaum, N.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Fiorentini, V.

V. Fiorentini, “Origin of the efficient light emission from inversion domain boundaries in GaN,” Appl. Phys. Lett. 82, 1182–1184 (2003).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

Forsberg, U.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Giugni, A.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Grober, R.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Guo, S.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Guo, W.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Han, T.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Han, X.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Hou, M.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Hsu, C.-W.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Hung, H.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Ichikawa, M.

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

Ishii, H.

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

Isobe, Y.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Janotti, A.

C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
[Crossref]

Janzén, E.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Jena, D.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Jiang, J.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Karrer, U.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Keller, S.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Kirste, R.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Kure, T.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Li, D.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Li, H.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Li, J.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

Li, K.-H.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Li, P.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Li, X.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Li, Z.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Lian, C.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Lima Pimenta, A.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Liu, J.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Liu, Z.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Martin, R. W.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Mishra, U.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Mita, S.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Neuberger, R.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Nilsson, D.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Oasa, K.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Onizawa, T.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Ono, T.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Pak, Y.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Palisaitis, J.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Persson, I.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Persson, P. O.

J.-T. Chen, I. Persson, D. Nilsson, C.-W. Hsu, J. Palisaitis, U. Forsberg, P. O. Persson, and E. Janzén, “Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure,” Appl. Phys. Lett. 106, 251601 (2015).
[Crossref]

Protasenko, V.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Qin, Z.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Reparaz, J. S.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Rice, A.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Roldan, M. A.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Roqan, I. S.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Rosales, A.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Saito, Y.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Schalwig, J.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Schuck, P.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Sheikhi, M.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Shen, B.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Simon, J.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Song, J.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Speckand, J.

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Stutzmann, M.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, “Playing with polarity,” Phys. Status Solidi B 228, 505–512 (2001).
[Crossref]

Sugiyama, N.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Sun, H.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Sun, Q.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Sun, Y.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Takada, Y.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Torre, B.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Tsuda, K.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Tweedie, J.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Van de Walle, C. G.

C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
[Crossref]

Vanderbilt, D.

C. E. Dreyer, A. Janotti, C. G. Van de Walle, and D. Vanderbilt, “Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides,” Phys. Rev. X 6, 021038 (2016).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

Wagner, M. R.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Wang, D.

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

Wang, M.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Wang, X.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Wei, N.

I. A. Ajia, P. R. Edwards, Y. Pak, E. Belekov, M. A. Roldan, N. Wei, Z. Liu, R. W. Martin, and I. S. Roqan, “Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode,” ACS Photon. 5, 820 (2017).
[Crossref]

Wu, F.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speckand, and U. Mishra, “Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition,” J. Appl. Phys. 102, 083546 (2007).
[Crossref]

Xie, J.

R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, S. Mita, J. Xie, A. Rice, and J. Tweedie, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN,” J. Appl. Phys. 110, 093503 (2011).
[Crossref]

Xing, H.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,” Science 327, 60–64 (2010).
[Crossref]

Xu, F.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Yan, L.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Ye, J.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, “Lateral-polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence,” Adv. Funct. Mater. 28, 1802395 (2018).
[Crossref]

Yoshida, S.

S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, “A highpower AlGaN/GaN heterojunction field-effect transistor,” Solid-State Electron. 47, 589–592 (2003).
[Crossref]

Yoshioka, A.

Y. Isobe, H. Hung, K. Oasa, T. Ono, T. Onizawa, A. Yoshioka, Y. Takada, Y. Saito, N. Sugiyama, and K. Tsuda, “Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence,” J. Appl. Phys. 121, 235703 (2017).
[Crossref]

Yu, T.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Yu, Y.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Zhang, D.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D 50, 245101 (2017).
[Crossref]

Zhang, L.

M. Hou, Z. Qin, L. Zhang, T. Han, M. Wang, F. Xu, X. Wang, T. Yu, Z. Fang, and B. Shen, “Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells,” Superlattices Microstruct. 104, 397–401 (2017).
[Crossref]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Zhang, S.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Zhang, Y.

L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018).
[Crossref]

Zhou, K.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

Zhou, Y.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

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[Crossref]

Adv. Funct. Mater. (1)

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[Crossref]

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[Crossref]

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[Crossref]

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[Crossref]

Nat. Photonics (1)

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, and S. Zhang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10, 595 (2016).
[Crossref]

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[Crossref]

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[Crossref]

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Figures (5)

Fig. 1.
Fig. 1. (a) Spatial mapping of PL intensities at 353 nm of the LPJ MQW. (b) 10 spectra randomly picked from III- and N-polar domains in (a).
Fig. 2.
Fig. 2. (a) CL spectrum of the LPJ MQWs with monotonic CL intensity distribution collected at (b) λ=343nm and (c) λ=449nm. Monotonic CL intensity distribution of (d) the N-polar MQW sample and (e) the III-polar MQW sample collected at λ=343nm.
Fig. 3.
Fig. 3. TRPL spectra of (a) the LPJ MQW, III-polar MQW, and N-polar MQW samples at 5 K and (b) the LPJ MQW sample at 5 K and RT.
Fig. 4.
Fig. 4. 3D band diagram of the LPJ MQWs comprising two 2D band diagrams, one for the N-polar domain and the other for the III-polar domain. Carrier ground state wavefunctions are included for the two 2D band diagrams by solving the Poisson equations and carrier transport equations. Dashed lines represent the in-plane interface between the N- and III-polar domains, connecting the band edges of III- and N-polar domains laterally on the same c-plane. Positions A and D, B and C, E and H, F and G are in the same physical position, respectively.
Fig. 5.
Fig. 5. (a) Lateral carrier concentrations in the middle of the 3-nm SQW [y=1.5nm in (c)]. The inset shows the mesa with current density contour; (b) 2D band diagrams at the SQW at x=90 and 170 μm along black dashed lines A and B in (c); (c) conduction band potentials near the SQW; (d) lateral diffusion and drift current densities at y=1.5nm.

Tables (2)

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Table 1. Spectral Peaks in III- and N-Polar Domains

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Table 2. Decay Lifetimes at 5  K [Fig. 3(a)]

Equations (3)

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I(t)=Afexp(tτf)+Asexp(tτs).
Jdiffusionlateral=qDdndx,
Jdriftlateral=qnμE=qnμdVdx.