Abstract

Mid-infrared (MIR) silicon photonic systems show great promise for miniaturizing a variety of sensing and detection technologies. Rapid progress has been made in recent years, and numerous passive and active MIR devices have now been constructed on various silicon-based platforms. We previously reported the heterogeneous integration on silicon of Fabry–Perot and distributed feedback quantum cascade lasers (QCLs) operating at 4.8 μm. Interband cascade lasers (ICLs) will be preferred for many on-chip sensing technologies because they operate in the 3–6 μm range with threshold drive powers 1–2 orders of magnitude lower than QCLs. In this work, we demonstrate the integration of ICLs on a silicon substrate. These lasers emit 3.6 μm light into silicon-on-insulator waveguides in pulsed mode at temperatures up to 50°C. This represents an important step toward MIR photonic integrated circuits on silicon that operate with much lower drive power and therefore an even smaller footprint.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]

2018 (1)

2017 (5)

T. Hu, B. Dong, X. Luo, T.-Y. Liow, J. Song, C. Lee, and G.-Q. Lo, “Silicon photonic platforms for mid-infrared applications [Invited],” Photon. Res. 5, 417–430 (2017).
[Crossref]

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
[Crossref]

N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
[Crossref]

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
[Crossref]

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

2016 (6)

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
[Crossref]

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
[Crossref]

M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III-V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quantum Electron. 22, 3100111 (2016).
[Crossref]

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
[Crossref]

2015 (5)

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

T. Komljenovic, M. L. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous silicon photonic integrated circuits,” J. Lightwave Technol. 34, 20–35 (2015).
[Crossref]

A. Spott, M. L. Davenport, J. Peters, J. Bovington, M. J. R. Heck, E. J. Stanton, I. Vurgaftman, J. R. Meyer, and J. Bowers, “Heterogeneously integrated 2.0  μm CW hybrid silicon lasers at room temperature,” Opt. Lett. 40, 1480–1483 (2015).
[Crossref]

T. Komljenovic, S. Srinivasan, E. Norberg, M. L. Davenport, G. Fish, and J. E. Bowers, “Widely tunable narrow-linewidth monolithically integrated external-cavity semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 1501909 (2015).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

2014 (3)

C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

A. De Groote, J. D. Peters, M. L. Davenport, M. J. R. Heck, R. Baets, G. Roelkens, and J. E. Bowers, “Heterogeneously integrated III-V-on-silicon multibandgap superluminescent light-emitting diode with 290 nm optical bandwidth,” Opt. Lett. 39, 4784–4787 (2014).
[Crossref]

2013 (2)

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

2012 (2)

Y. Yao, A. J. Hoffman, and C. F. Gmachl, “Mid-infrared quantum cascade lasers,” Nat. Photonics 6, 432–439 (2012).
[Crossref]

M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
[Crossref]

2011 (3)

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

A. Salhi, P. C. Chi, A. Alharbi, G. S. Petrich, A. Al-Muhanna, and L. A. Kolodziejski, “Temperature dependence of optical gain and loss in 2-μm InP lasers,” IEEE Photon. Technol. Lett. 23, 1523–1525 (2011).
[Crossref]

K. Vizbaras and M. C. Amann, “3.6  μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature,” Electron. Lett. 47, 980–981 (2011).
[Crossref]

2010 (1)

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

2008 (1)

D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol. B 26, 1560–1568 (2008).
[Crossref]

1996 (1)

J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, “Type-II and Type-I interband cascade lasers,” Electron. Lett. 32, 45–46 (1996).
[Crossref]

1995 (1)

R. Q. Yang, “Infrared laser based on intersubband transitions in quantum wells,” Superlatt. Microstruct. 17, 77–83 (1995).
[Crossref]

Abell, J.

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

Affouda, C. A.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

Aifer, E. H.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

Alharbi, A.

A. Salhi, P. C. Chi, A. Alharbi, G. S. Petrich, A. Al-Muhanna, and L. A. Kolodziejski, “Temperature dependence of optical gain and loss in 2-μm InP lasers,” IEEE Photon. Technol. Lett. 23, 1523–1525 (2011).
[Crossref]

Al-Muhanna, A.

A. Salhi, P. C. Chi, A. Alharbi, G. S. Petrich, A. Al-Muhanna, and L. A. Kolodziejski, “Temperature dependence of optical gain and loss in 2-μm InP lasers,” IEEE Photon. Technol. Lett. 23, 1523–1525 (2011).
[Crossref]

Amann, M. C.

K. Vizbaras and M. C. Amann, “3.6  μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature,” Electron. Lett. 47, 980–981 (2011).
[Crossref]

Amann, M.-C.

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
[Crossref]

Babikov, Y.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Baets, R.

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
[Crossref]

A. De Groote, J. D. Peters, M. L. Davenport, M. J. R. Heck, R. Baets, G. Roelkens, and J. E. Bowers, “Heterogeneously integrated III-V-on-silicon multibandgap superluminescent light-emitting diode with 290 nm optical bandwidth,” Opt. Lett. 39, 4784–4787 (2014).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Bar, H.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

Barbe, A.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Becker, S.

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
[Crossref]

Belkin, M. A.

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
[Crossref]

Ben Masaud, T. M.

M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
[Crossref]

Benner, D. C.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Bennett, M. F.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

Bernath, P. F.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Bewley, W.

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

Bewley, W. W.

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

Birk, M.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Bizzocchi, L.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Boehm, G.

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
[Crossref]

Botez, D.

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

Boudon, V.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Bovington, J.

Bowers, J.

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

A. Spott, M. L. Davenport, J. Peters, J. Bovington, M. J. R. Heck, E. J. Stanton, I. Vurgaftman, J. R. Meyer, and J. Bowers, “Heterogeneously integrated 2.0  μm CW hybrid silicon lasers at room temperature,” Opt. Lett. 40, 1480–1483 (2015).
[Crossref]

Bowers, J. E.

N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
[Crossref]

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
[Crossref]

M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III-V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quantum Electron. 22, 3100111 (2016).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
[Crossref]

T. Komljenovic, M. L. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous silicon photonic integrated circuits,” J. Lightwave Technol. 34, 20–35 (2015).
[Crossref]

T. Komljenovic, S. Srinivasan, E. Norberg, M. L. Davenport, G. Fish, and J. E. Bowers, “Widely tunable narrow-linewidth monolithically integrated external-cavity semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 1501909 (2015).
[Crossref]

A. De Groote, J. D. Peters, M. L. Davenport, M. J. R. Heck, R. Baets, G. Roelkens, and J. E. Bowers, “Heterogeneously integrated III-V-on-silicon multibandgap superluminescent light-emitting diode with 290 nm optical bandwidth,” Opt. Lett. 39, 4784–4787 (2014).
[Crossref]

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol. B 26, 1560–1568 (2008).
[Crossref]

Briles, T. C.

N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
[Crossref]

Brown, L. R.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Brubaker, C.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

Campargue, A.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Canedy, C. L.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

Cerutti, L.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Chakravarty, S.

Chance, K.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Chang, L.

N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
[Crossref]

Chapman, D. C.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

Chen, R. T.

Chen, X.

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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Healy, N.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Hens, Z.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Hill, C.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Hodges, J. T.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Hoffman, A. J.

Y. Yao, A. J. Hoffman, and C. F. Gmachl, “Mid-infrared quantum cascade lasers,” Nat. Photonics 6, 432–439 (2012).
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Höfling, S.

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
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I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
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Hu, C.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Hu, T.

Hulme, J.

Hulme, J. C.

M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III-V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quantum Electron. 22, 3100111 (2016).
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Jaberansary, E.

M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
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Jackson, E. M.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
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Jacquemart, D.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Jernigan, G. G.

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

Jolly, A.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Jung, S.

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
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Juodawlkis, P. W.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
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Kamp, M.

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
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I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
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Kim, C. S.

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
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M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
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I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
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C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
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I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
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I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
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Kim, J. H.

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
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Kim, M.

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
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M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
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C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
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Kirch, J.

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

Koeth, J.

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
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Kolodziejski, L. A.

A. Salhi, P. C. Chi, A. Alharbi, G. S. Petrich, A. Al-Muhanna, and L. A. Kolodziejski, “Temperature dependence of optical gain and loss in 2-μm InP lasers,” IEEE Photon. Technol. Lett. 23, 1523–1525 (2011).
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T. Komljenovic, S. Srinivasan, E. Norberg, M. L. Davenport, G. Fish, and J. E. Bowers, “Widely tunable narrow-linewidth monolithically integrated external-cavity semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 1501909 (2015).
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T. Komljenovic, M. L. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous silicon photonic integrated circuits,” J. Lightwave Technol. 34, 20–35 (2015).
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Kuyken, B.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Lamouroux, J.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Le Roy, R. J.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Lee, C.

Leo, F.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Li, G.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Li, Y.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
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Liang, D.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
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D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol. B 26, 1560–1568 (2008).
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Lindle, J. R.

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

Liow, T.-Y.

Liu, A. Y.

Liu, X.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Lo, G.-Q.

Long, D. A.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Loo, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Luo, X.

Lyulin, O. M.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Mackie, C. J.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Malik, A.

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Mann, C.

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

Mashanovich, G.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Mashanovich, G. Z.

M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
[Crossref]

Massie, S. T.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Mawst, L.

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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
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I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
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I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
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J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
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A. Spott, M. L. Davenport, J. Peters, J. Bovington, M. J. R. Heck, E. J. Stanton, I. Vurgaftman, J. R. Meyer, and J. Bowers, “Heterogeneously integrated 2.0  μm CW hybrid silicon lasers at room temperature,” Opt. Lett. 40, 1480–1483 (2015).
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I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
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L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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Peters, J.

Peters, J. D.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
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N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
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D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
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J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, “Type-II and Type-I interband cascade lasers,” Electron. Lett. 32, 45–46 (1996).
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L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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Roelkens, G.

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R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
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R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
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N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
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A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
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T. Komljenovic, M. L. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous silicon photonic integrated circuits,” J. Lightwave Technol. 34, 20–35 (2015).
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A. Spott, M. L. Davenport, J. Peters, J. Bovington, M. J. R. Heck, E. J. Stanton, I. Vurgaftman, J. R. Meyer, and J. Bowers, “Heterogeneously integrated 2.0  μm CW hybrid silicon lasers at room temperature,” Opt. Lett. 40, 1480–1483 (2015).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
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K. Vizbaras and M. C. Amann, “3.6  μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature,” Electron. Lett. 47, 980–981 (2011).
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A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
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N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
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M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III-V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quantum Electron. 22, 3100111 (2016).
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J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
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N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
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J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
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A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. D. Merritt, W. W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. J. Mawst, D. Botez, and J. E. Bowers, “Quantum cascade laser on silicon,” Optica 3, 545–551 (2016).
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A. Spott, M. L. Davenport, J. Peters, J. Bovington, M. J. R. Heck, E. J. Stanton, I. Vurgaftman, J. R. Meyer, and J. Bowers, “Heterogeneously integrated 2.0  μm CW hybrid silicon lasers at room temperature,” Opt. Lett. 40, 1480–1483 (2015).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

C. L. Canedy, J. Abell, C. D. Merritt, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, “Pulsed and CW performance of 7-stage interband cascade lasers,” Opt. Express 22, 7702–7710 (2014).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, “Type-II and Type-I interband cascade lasers,” Electron. Lett. 32, 45–46 (1996).
[Crossref]

Wagner, G.

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

Wang, R.

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

R. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M.-C. Amann, and G. Roelkens, “2.3 μm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit,” Opt. Express 24, 21081–21089 (2016).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

Weih, R.

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
[Crossref]

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

Xu, X.

Yang, R. Q.

J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, “Type-II and Type-I interband cascade lasers,” Electron. Lett. 32, 45–46 (1996).
[Crossref]

R. Q. Yang, “Infrared laser based on intersubband transitions in quantum wells,” Superlatt. Microstruct. 17, 77–83 (1995).
[Crossref]

Yao, Y.

Y. Yao, A. J. Hoffman, and C. F. Gmachl, “Mid-infrared quantum cascade lasers,” Nat. Photonics 6, 432–439 (2012).
[Crossref]

Zhang, C.

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

T. Komljenovic, M. L. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous silicon photonic integrated circuits,” J. Lightwave Technol. 34, 20–35 (2015).
[Crossref]

Zou, Y.

Appl. Phys. A (1)

D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, and J. E. Bowers, “Uniformity study of wafer-scale InP-to-silicon hybrid integration,” Appl. Phys. A 103, 213–218 (2010).
[Crossref]

Appl. Phys. Lett. (4)

M. M. Milosevic, M. Nedeljkovic, T. M. Ben Masaud, E. Jaberansary, H. M. H. Chong, N. G. Emerson, G. T. Reed, and G. Z. Mashanovich, “Silicon waveguides and devices for the mid-infrared,” Appl. Phys. Lett. 101, 121105 (2012).
[Crossref]

J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, and E. H. Aifer, “Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors,” Appl. Phys. Lett. 111, 051102 (2017).
[Crossref]

R. Wang, S. Sprengel, A. Malik, A. Vasiliev, G. Boehm, R. Baets, M.-C. Amann, and G. Roelkens, “Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region,” Appl. Phys. Lett. 109, 221111 (2016).
[Crossref]

S. Jung, J. Kirch, J. H. Kim, L. J. Mawst, D. Botez, and M. A. Belkin, “Quantum cascade lasers transfer-printed on silicon-on-sapphire,” Appl. Phys. Lett. 111, 211102 (2017).
[Crossref]

Electron. Lett. (2)

K. Vizbaras and M. C. Amann, “3.6  μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature,” Electron. Lett. 47, 980–981 (2011).
[Crossref]

J. R. Meyer, I. Vurgaftman, R. Q. Yang, and L. R. Ram-Mohan, “Type-II and Type-I interband cascade lasers,” Electron. Lett. 32, 45–46 (1996).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (5)

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J.-B. Rodriguez, E. Tournié, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. M. J. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20, 8201511 (2014).
[Crossref]

T. Komljenovic, S. Srinivasan, E. Norberg, M. L. Davenport, G. Fish, and J. E. Bowers, “Widely tunable narrow-linewidth monolithically integrated external-cavity semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 1501909 (2015).
[Crossref]

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, and J. R. Meyer, “Interband cascade lasers with low threshold powers and high output powers,” IEEE J. Sel. Top. Quantum Electron. 19, 1200210 (2013).
[Crossref]

M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III-V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quantum Electron. 22, 3100111 (2016).
[Crossref]

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous integration for mid-infrared silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 23, 1–10 (2017).
[Crossref]

IEEE Photon. Technol. Lett. (1)

A. Salhi, P. C. Chi, A. Alharbi, G. S. Petrich, A. Al-Muhanna, and L. A. Kolodziejski, “Temperature dependence of optical gain and loss in 2-μm InP lasers,” IEEE Photon. Technol. Lett. 23, 1523–1525 (2011).
[Crossref]

J. Lightwave Technol. (1)

J. Phys. D (1)

I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling, “Interband cascade lasers,” J. Phys. D 48, 123001 (2015).
[Crossref]

J. Quantum Spectrosc. Radiat. Transfer (1)

L. S. Rothman, I. E. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. F. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. R. Brown, A. Campargue, K. Chance, E. A. Cohen, L. H. Coudert, V. M. Devi, B. J. Drouin, A. Fayt, J.-M. Flaud, R. R. Gamache, J. J. Harrison, J.-M. Hartmann, C. Hill, J. T. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. J. Le Roy, G. Li, D. A. Long, O. M. Lyulin, C. J. Mackie, S. T. Massie, S. Mikhailenko, H. S. P. Müller, O. V. Naumenko, A. V. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. R. Polovtseva, C. Richard, M. A. H. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. C. Toon, V. G. Tyuterev, and G. Wagner, “The HITRAN2012 molecular spectroscopic database,” J. Quantum Spectrosc. Radiat. Transfer 130, 4–50 (2013).
[Crossref]

J. Vac. Sci. Technol. B (1)

D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol. B 26, 1560–1568 (2008).
[Crossref]

Laser Photon. Rev. (1)

N. Volet, A. Spott, E. J. Stanton, M. L. Davenport, L. Chang, J. D. Peters, T. C. Briles, I. Vurgaftman, J. R. Meyer, and J. E. Bowers, “Semiconductor optical amplifiers at 2.0-μm wavelength on silicon,” Laser Photon. Rev. 11, 1600165 (2017).
[Crossref]

Nat. Commun. (1)

I. Vurgaftman, W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, J. R. Lindle, and J. R. Meyer, “Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption,” Nat. Commun. 2, 585 (2011).
[Crossref]

Nat. Photonics (1)

Y. Yao, A. J. Hoffman, and C. F. Gmachl, “Mid-infrared quantum cascade lasers,” Nat. Photonics 6, 432–439 (2012).
[Crossref]

Opt. Express (2)

Opt. Lett. (2)

Optica (1)

Photon. Res. (2)

Photonics (1)

A. Spott, J. Peters, M. L. Davenport, E. J. Stanton, C. Zhang, C. Merritt, W. Bewley, I. Vurgaftman, C. S. Kim, J. R. Meyer, J. Kirch, L. Mawst, D. Botez, and J. Bowers, “Heterogeneously integrated distributed feedback quantum cascade lasers on silicon,” Photonics 3, 35 (2016).
[Crossref]

Proc. SPIE (2)

J. Scheuermann, M. von Edlinger, R. Weih, S. Becker, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling, “Single-mode interband cascade laser sources for mid-infrared spectroscopic applications,” Proc. SPIE 9855, 98550G (2016).
[Crossref]

M. Kim, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, J. Abell, I. Vurgaftman, and J. R. Meyer, “Interband cascade lasers with high CW power and brightness,” Proc. SPIE 9370, 937029 (2015).
[Crossref]

Superlatt. Microstruct. (1)

R. Q. Yang, “Infrared laser based on intersubband transitions in quantum wells,” Superlatt. Microstruct. 17, 77–83 (1995).
[Crossref]

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Figures (11)

Fig. 1.
Fig. 1. (a) 3D schematic of the ICL heterogeneously integrated with a silicon waveguide; (b) cross-sectional schematic of the hybrid III-V/Si active region; (c) active region cross section of Device A, overlaid with contour plots of the electric field profiles | E x | for the first two optical modes.
Fig. 2.
Fig. 2. (a) Top-down optical microscope image of five fully fabricated ICLs integrated on silicon; (b) SEM images of the III-V taper tip of a representative device. Left, before SiN encapsulation; right, after deposition of the probe metal.
Fig. 3.
Fig. 3. Simplified fabrication process flow for the integrated ICLs. Hard masks, via etches, and probe metals are not shown. (a) Beginning with an SOI wafer with 1.5 μm of silicon on top, silicon waveguides are partially etched and VOCs (not shown) are fully etched. (b) The ICL chip is flip-chip die-bonded to the silicon wafer. (c) The GaSb substrate is removed by mechanical lapping, followed by chemical etching. (d) The upper cladding, top SCH layer, and active ICL stages are etched to form mesas above the silicon waveguides. (e) The bottom SCH layer is selectively chemically etched to reveal the bottom contact layer. (f) Ti/Pt/Au is deposited for bottom metal contacts. (g) The remaining III-V layers are etched. (h) Ti/Pt/Au is deposited for top metal contacts after SiN deposition and via etches.
Fig. 4.
Fig. 4. Output power (in arbitrary units, left axis) and voltage (right axis) versus drive current at 20°C for Devices (a) A and (b) B.
Fig. 5.
Fig. 5. Emission spectra of Devices A and B with both tapers intact at 20°C.
Fig. 6.
Fig. 6. (a) Single-side peak output power versus drive current for all three devices at 20°C, as collected from a polished hybrid III-V/Si facet after one taper was removed. (b) Voltage versus drive current density for the three devices, along with analogous data for a 32-μm-wide seven-stage ICL ridge fabricated on a native GaSb substrate (for reference).
Fig. 7.
Fig. 7. Emission spectra for all three devices at 20°C after one taper was removed.
Fig. 8.
Fig. 8. Far-field intensity as a function of angle normal to the facet along the slow (horizontal) axes devices (a) A, (b) B, and (c) C. Solid lines are the measured profiles, while the dashed lines are simulations assuming the TE 10 mode. The measurements were taken at 20°C and drive currents of 640 mA for Devices A and C and 700 mA for Device B.
Fig. 9.
Fig. 9. (a) Single-side peak output power versus drive current at temperatures ranging from 100 ° C to 50°C for Device A after one taper was removed. (b) Threshold current density versus temperature from the same data.
Fig. 10.
Fig. 10. Threshold voltage versus temperature for Device A.
Fig. 11.
Fig. 11. (a) Emission spectra of Device A over the broad temperature range 100 ° C 50 ° C ; (b) temperature dependence of the centroid wavelength; (c) spectra over a narrow temperature range (10°C–50°C) on a finer grid.

Tables (2)

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Table 1. Laser Geometries

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