Abstract

Optically pumped semiconductor disk lasers are an important class of solid state lasers. Despite all their advantages, however, they suffer from heat incorporation into the active region caused by the excess energy of the pump photons. To overcome the limits of common methods in thermal management, we realized a semiconductor membrane external-cavity surface-emitting laser (MECSEL) consisting of a diamond heat spreader sandwiched active region design without a monolithically integrated distributed Bragg reflector (DBR). This diamond-sandwich approach improves the heat dissipation out of the active region and makes generally low-heat conductive DBRs obsolete. In an AlGaInP-based system, we demonstrate 595 mW output power at a wavelength of 657 nm and heatsink temperature of 10°C. The MECSEL enables a variety of new material combinations for new laser wavelengths and further potential for power scaling.

© 2016 Optical Society of America

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References

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    [Crossref]
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  30. C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
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  32. C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
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2016 (4)

K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
[Crossref]

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
[Crossref]

A. Diebold, T. Zengerle, C. G. E. Alfieri, C. Schriber, F. Emaury, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, D. Follman, G. D. Cole, M. Aspelmeyer, T. Südmeyer, and U. Keller, “Optimized SESAMs for kilowatt-level ultrafast lasers,” Opt. Express 24, 10512–10526 (2016).
[Crossref]

2015 (7)

C. M. N. Mateo, U. Brauch, T. Schwarzbäck, H. Kahle, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “Enhanced efficiency of AlGaInP disk laser by in-well pumping,” Opt. Express 23, 2472–2486 (2015).
[Crossref]

E. Kantola, T. Leinonen, J.-P. Penttinen, V.-M. Korpijärvi, and M. Guina, “615  nm GaInNAs VECSEL with output power above 10  W,” Opt. Express 23, 20280–20287 (2015).
[Crossref]

Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “Optically pumped DBR-free semiconductor disk lasers,” Opt. Express 23, 33164–33169 (2015).
[Crossref]

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

2014 (3)

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
[Crossref]

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

2013 (4)

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
[Crossref]

2012 (1)

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

2011 (2)

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

2010 (1)

Ł. Piskorski, R. P. Sarzała, and W. Nakwaski, “Enhanced single-fundamental lp01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs,” Appl. Phys. A 98, 651–657 (2010).
[Crossref]

2009 (2)

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
[Crossref]

A. J. Maclean, R. B. Birch, P. W. Roth, A. J. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26, 2228–2236 (2009).
[Crossref]

2008 (1)

P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
[Crossref]

2007 (1)

A. Giesen and J. Speiser, “Fifteen years of work on thin-disk lasers: results and scaling laws,” IEEE J. Sel. Top. Quantum Electron. 13, 598–609 (2007).
[Crossref]

2005 (1)

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

2004 (1)

H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[Crossref]

2003 (1)

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

2002 (1)

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

1997 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[Crossref]

1995 (1)

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

1973 (1)

M. A. Afromowitz, “Thermal conductivity of ga1-xalx GaAlAs alloys,” J. Appl. Phys. 44, 1292–1294 (1973).
[Crossref]

Adler, S.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Afromowitz, M. A.

M. A. Afromowitz, “Thermal conductivity of ga1-xalx GaAlAs alloys,” J. Appl. Phys. 44, 1292–1294 (1973).
[Crossref]

Ahmed, M. A.

Aidam, R.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Albrecht, A. R.

Alfieri, C. G. E.

Aspelmeyer, M.

Bächle, A.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Bek, R.

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

Bengtsson, J.

H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[Crossref]

Beyertt, S.-S.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Biebersdorf, A.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Birch, R. B.

A. J. Maclean, R. B. Birch, P. W. Roth, A. J. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26, 2228–2236 (2009).
[Crossref]

P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
[Crossref]

Bister, M.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

Brauch, U.

Bronner, W.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Burns, D.

A. J. Maclean, R. B. Birch, P. W. Roth, A. J. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26, 2228–2236 (2009).
[Crossref]

P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Cederberg, J. G.

Cheng, C.-W.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

Cockburn, J. W.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

Cole, G. D.

Czyszanowski, T.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Dawson, M. D.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Dems, M.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Diebold, A.

Doehler, G. H.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Ecker, I.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

Eichfelder, M.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Emaury, F.

Follman, D.

Galler, B.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Gallo, P.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Garcia, T. A.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Gbele, K.

K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
[Crossref]

Gebski, M.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Gerster, E.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

Giesen, A.

A. Giesen and J. Speiser, “Fifteen years of work on thin-disk lasers: results and scaling laws,” IEEE J. Sel. Top. Quantum Electron. 13, 598–609 (2007).
[Crossref]

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Gini, E.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Golling, M.

A. Diebold, T. Zengerle, C. G. E. Alfieri, C. Schriber, F. Emaury, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, D. Follman, G. D. Cole, M. Aspelmeyer, T. Südmeyer, and U. Keller, “Optimized SESAMs for kilowatt-level ultrafast lasers,” Opt. Express 24, 10512–10526 (2016).
[Crossref]

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Graf, T.

Guilhabert, B.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Guina, M.

E. Kantola, T. Leinonen, J.-P. Penttinen, V.-M. Korpijärvi, and M. Guina, “615  nm GaInNAs VECSEL with output power above 10  W,” Opt. Express 23, 20280–20287 (2015).
[Crossref]

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
[Crossref]

Hader, J.

K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
[Crossref]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Hahn, B.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Hahn, C.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[Crossref]

Han, S.-J.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

Hargart, F.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

Härkönen, A.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

Hastie, J. E.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Heikkinen, J.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

Heinen, B.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Herrnsdorf, J.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Hoeppel, L.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Hoffmann, M.

Holl, P.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Hopkins, J.-M.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Hopkinson, M.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

Iakovlev, V.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Jesus, J. D.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Jetter, M.

C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
[Crossref]

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

C. M. N. Mateo, U. Brauch, T. Schwarzbäck, H. Kahle, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “Enhanced efficiency of AlGaInP disk laser by in-well pumping,” Opt. Express 23, 2472–2486 (2015).
[Crossref]

T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Johnson, N. M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

Jones, B. E.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Kahle, H.

C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
[Crossref]

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

C. M. N. Mateo, U. Brauch, T. Schwarzbäck, H. Kahle, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “Enhanced efficiency of AlGaInP disk laser by in-well pumping,” Opt. Express 23, 2472–2486 (2015).
[Crossref]

T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

Kantola, E.

Kapon, E.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Karnutsch, C.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Kaspar, S.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Keller, U.

A. Diebold, T. Zengerle, C. G. E. Alfieri, C. Schriber, F. Emaury, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, D. Follman, G. D. Cole, M. Aspelmeyer, T. Südmeyer, and U. Keller, “Optimized SESAMs for kilowatt-level ultrafast lasers,” Opt. Express 24, 10512–10526 (2016).
[Crossref]

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Kelly, A. E.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Kemp, A. J.

A. J. Maclean, R. B. Birch, P. W. Roth, A. J. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26, 2228–2236 (2009).
[Crossref]

P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Kessler, C. A.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

Klenner, A.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Koch, M.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Koch, S. W.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Kontio, J.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

Koroknay, E.

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

Korpijärvi, V.-M.

Kowalski, O. P.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

Kraeuter, G.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Kunert, B.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[Crossref]

Laakso, A.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
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A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
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Larsson, A.

H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
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B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
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K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
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Laurand, N.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
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Leinonen, T.

E. Kantola, T. Leinonen, J.-P. Penttinen, V.-M. Korpijärvi, and M. Guina, “615  nm GaInNAs VECSEL with output power above 10  W,” Opt. Express 23, 20280–20287 (2015).
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L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
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Li, N.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
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H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
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M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
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B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
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E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
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M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
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Lugauer, H.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
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Lyytikäinen, J.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
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Maclean, A. J.

Mangold, M.

A. Diebold, T. Zengerle, C. G. E. Alfieri, C. Schriber, F. Emaury, M. Mangold, M. Hoffmann, C. J. Saraceno, M. Golling, D. Follman, G. D. Cole, M. Aspelmeyer, T. Südmeyer, and U. Keller, “Optimized SESAMs for kilowatt-level ultrafast lasers,” Opt. Express 24, 10512–10526 (2016).
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B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
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Mateo, C. M. N.

Mayer, A. S.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
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McKendry, J. J. D.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
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Menzel, S.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

Meyer, T.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
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Michler, P.

C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
[Crossref]

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

C. M. N. Mateo, U. Brauch, T. Schwarzbäck, H. Kahle, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “Enhanced efficiency of AlGaInP disk laser by in-well pumping,” Opt. Express 23, 2472–2486 (2015).
[Crossref]

T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
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P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
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K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
[Crossref]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
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Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
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Mowbray, D. J.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
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Müller, M.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
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Ł. Piskorski, R. P. Sarzała, and W. Nakwaski, “Enhanced single-fundamental lp01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs,” Appl. Phys. A 98, 651–657 (2010).
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Northrup, J. E.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
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A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
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Okhotnikov, O. G.

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
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S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3, 407–434 (2009).
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Penttinen, J.-P.

Peter, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
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Piskorski, L.

Ł. Piskorski, R. P. Sarzała, and W. Nakwaski, “Enhanced single-fundamental lp01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs,” Appl. Phys. A 98, 651–657 (2010).
[Crossref]

Rantamäki, A.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
[Crossref]

Rattunde, M.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
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Roßbach, R.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Rotella, P.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

Roth, P. W.

Saarinen, E.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

Saarinen, E. J.

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
[Crossref]

Sabathil, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Sadana, D. K.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

Santos, J. M. M.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Saraceno, C. J.

Sarzala, R. P.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Ł. Piskorski, R. P. Sarzała, and W. Nakwaski, “Enhanced single-fundamental lp01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs,” Appl. Phys. A 98, 651–657 (2010).
[Crossref]

Schlosser, P. J.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Schmid, W.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Schriber, C.

Schulz, W.-M.

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Schwarzbäck, T.

C. M. N. Mateo, U. Brauch, H. Kahle, T. Schwarzbäck, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “2.5  W continuous wave output at 665  nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser,” Opt. Lett. 41, 1245–1248 (2016).
[Crossref]

H. Kahle, C. M. N. Mateo, U. Brauch, R. Bek, T. Schwarzbäck, M. Jetter, T. Graf, and P. Michler, “Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs,” Proc. SPIE 9734, 97340T (2016).

C. M. N. Mateo, U. Brauch, T. Schwarzbäck, H. Kahle, M. Jetter, M. A. Ahmed, P. Michler, and T. Graf, “Enhanced efficiency of AlGaInP disk laser by in-well pumping,” Opt. Express 23, 2472–2486 (2015).
[Crossref]

T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
[Crossref]

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Sheik-Bahae, M.

Shi, L.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

Shiu, K.-T.

C.-W. Cheng, K.-T. Shiu, N. Li, S.-J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref]

Sirbu, A.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Skolnick, M. S.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

Smith, S. A.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Sokól, A. K.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Sparenberg, M.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Speiser, J.

A. Giesen and J. Speiser, “Fifteen years of work on thin-disk lasers: results and scaling laws,” IEEE J. Sel. Top. Quantum Electron. 13, 598–609 (2007).
[Crossref]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
[Crossref]

Steegmueller, U.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Stolz, W.

K. Gbele, A. Laurain, J. Hader, W. Stolz, and J. V. Moloney, “Design and fabrication of hybrid metal semiconductor mirror for high-power VECSELs,” IEEE Photon. Technol. Lett. 28, 732–735 (2016).
[Crossref]

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Strassburg, M.

B. Galler, M. Sabathil, A. Laubsch, T. Meyer, L. Hoeppel, G. Kraeuter, H. Lugauer, M. Strassburg, M. Peter, A. Biebersdorf, U. Steegmueller, and B. Hahn, “Green high-power light sources using InGaN multi-quantum-well structures for full conversion,” Phys. Status Solidi C 8, 2369–2371 (2011).
[Crossref]

Strassner, M.

H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
[Crossref]

Streubel, K. P.

M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. P. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. H. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660  nm,” Proc. SPIE 4649, 265–271 (2002).
[Crossref]

Südmeyer, T.

Tamargo, M. C.

J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
[Crossref]

Teepe, M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

Teissier, R.

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

Tilma, B. W.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Toikkanen, L.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

Tukiainen, A.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

Unger, P.

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
[Crossref]

Valden, M.

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
[Crossref]

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
[Crossref]

Valentine, G. J.

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

Viheriälä, J.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
[Crossref]

Wagner, J.

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

Walczak, J.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
[Crossref]

Waldburger, D.

B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

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B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Wasiak, M.

V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
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[Crossref]

Weber, A.

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

Wraback, M.

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

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T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

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Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “Optically pumped DBR-free semiconductor disk lasers,” Opt. Express 23, 33164–33169 (2015).
[Crossref]

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
[Crossref]

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B. W. Tilma, M. Mangold, C. A. Zaugg, S. M. Link, D. Waldburger, A. Klenner, A. S. Mayer, E. Gini, M. Golling, and U. Keller, “Recent advances in ultrafast semiconductor disk lasers,” Light Sci. Appl. 4, e310 (2015).
[Crossref]

Zengerle, T.

Appl. Phys. A (1)

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[Crossref]

Appl. Phys. B (1)

T. Schwarzbäck, M. Eichfelder, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler, “Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2  W continuous-wave output power,” Appl. Phys. B 102, 789–794 (2011).
[Crossref]

Appl. Phys. Lett. (3)

T. Schwarzbäck, R. Bek, F. Hargart, C. A. Kessler, H. Kahle, E. Koroknay, M. Jetter, and P. Michler, “High-power InP quantum dot based semiconductor disk laser exceeding 1.3  W,” Appl. Phys. Lett. 102, 092101 (2013).
[Crossref]

O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, “GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements,” Appl. Phys. Lett. 66, 619–621 (1995).
[Crossref]

A. Rantamäki, E. J. Saarinen, J. Lyytikäinen, K. Lahtonen, M. Valden, and O. G. Okhotnikov, “High power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror,” Appl. Phys. Lett. 104, 101110 (2014).
[Crossref]

Electron. Lett. (1)

B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106  W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48, 516–517 (2012).
[Crossref]

IEEE J. Quantum Electron. (2)

P. Millar, R. B. Birch, A. J. Kemp, and D. Burns, “Synthetic diamond for intracavity thermal management in compact solid-state lasers,” IEEE J. Quantum Electron. 44, 709–717 (2008).
[Crossref]

A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41, 148–155 (2005).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (3)

P. Holl, M. Rattunde, S. Adler, S. Kaspar, W. Bronner, A. Bächle, R. Aidam, and J. Wagner, “Recent advances in power scaling of GaSb-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 324–335 (2015).
[Crossref]

A. Rantamäki, E. Saarinen, J. Lyytikäinen, J. Heikkinen, J. Kontio, K. Lahtonen, M. Valden, and O. Okhotnikov, “Thermal management in long-wavelength flip-chip semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 21, 336–342 (2015).
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L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Laakso, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs-based laser with direct orange emission,” IEEE Photon. Technol. Lett. 26, 384–386 (2014).
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H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550  nm,” IEEE Photon. Technol. Lett. 16, 362–364 (2004).
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M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular tem00 beams,” IEEE Photon. Technol. Lett. 9, 1063–1065 (1997).
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J. Appl. Phys. (2)

E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, “Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser,” J. Appl. Phys. 94, 7397–7401 (2003).
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T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler, “Strain compensation techniques for red AlGaInP-VECSELs: performance comparison of epitaxial designs,” J. Cryst. Growth 370, 208–211 (2013).
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V. Iakovlev, J. Walczak, M. Gębski, A. K. Sokół, M. Wasiak, P. Gallo, A. Sirbu, R. P. Sarzała, M. Dems, T. Czyszanowski, and E. Kapon, “Double-diamond high-contrast-gratings vertical external cavity surface emitting laser,” J. Phys. D 47, 065104 (2014).
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Jpn. J. Appl. Phys. (1)

T. Wunderer, J. E. Northrup, Z. Yang, M. Teepe, N. M. Johnson, P. Rotella, and M. Wraback, “In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers,” Jpn. J. Appl. Phys. 52, 08JG11 (2013).
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J. M. M. Santos, B. E. Jones, P. J. Schlosser, S. Watson, J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, J. D. Jesus, T. A. Garcia, M. C. Tamargo, A. E. Kelly, J. E. Hastie, N. Laurand, and M. D. Dawson, “Hybrid GaN LED with capillary-bonded II-VI MQW color-converting membrane for visible light communications,” Semicond. Sci. Technol. 30, 035012 (2015).
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Other (2)

Ultrafast High-Average Power Ti:Sapphire Thin-Disk Oscillator and Amplifiers, 2013, http://www.tisa-td.eu/ .

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Figures (12)

Fig. 1.
Fig. 1.

Photograph of the operating MECSEL in an asymmetric linear resonator, including a birefringent filter for wavelength selection. Additionally, the optics for the pump beam can be seen.

Fig. 2.
Fig. 2.

Left part of this figure shows a SEM picture with enhanced contrast settings of the unprocessed membrane sample alongside the corresponding scheme. A magnified cutout of the outer layers and a quantum-well package is plotted on the right-hand side with a SEM picture of one quantum-well package.

Fig. 3.
Fig. 3.

SEM picture of the quantum membrane, taken from a free-standing piece sticking to a sample carrier. Dirt particles are visible on the sample surface. The quantum-well packages, appearing as lighter stripes, are clearly visible. The thickness of the membrane is 590 nm, measured at an unprocessed cross section of the sample (for more details see Fig. 2) at several positions.

Fig. 4.
Fig. 4.

Microscope picture of the semiconductor gain membrane bonded to and squeezed in between two diamond heat spreaders.

Fig. 5.
Fig. 5.

Schematic drawing of the semiconductor membrane laser setup: A linear resonator with a birefringent filter in the long arm of the cavity as can be seen in Fig. 1 (dimensions not to scale).

Fig. 6.
Fig. 6.

Output power plotted over incident pump power of the MECSEL and the corresponding VECSEL. The heatsink temperature was 10°C and the pump spot diameter approximately 80 μm.

Fig. 7.
Fig. 7.

High-dynamic-range photo of the gain-membrane holder. The beams are labeled and percentages of the measured transmitted and reflected pump powers are given.

Fig. 8.
Fig. 8.

Several exemplary MECSEL emission spectra plotted versus wavelength using a birefringent filter for tuning. The measurements were performed with two highly reflective mirrors. The intensities of the laser spectra are normalized to the measured output powers with a maximum of 2 mW around 660 nm.

Fig. 9.
Fig. 9.

(a) Typical spectrum of the free-running MECSEL at around 3.2 W of incident pump power. (b) Typical spectrum of the corresponding free-running VECSEL at around 3.2 W of incident pump power.

Fig. 10.
Fig. 10.

Surface and edge PL spectra of the unprocessed MECSEL in comparison to the edge PL of the corresponding VECSEL and the MECSEL gain device (diamond-sandwiched, QW-containing semiconductor membrane).

Fig. 11.
Fig. 11.

Typical beam profile of the MECSEL, demonstrating a Gaussian intensity distribution.

Fig. 12.
Fig. 12.

Beam propagation plot (beam radii versus distance) of the Coherent ModeMaster for the external beam after collimation with a 300 mm lens.

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