Abstract

This paper describes research on the optics of functional materials, which can change their dielectric properties according to their function. Vanadium dioxide is a good example of such a material where the insulator-to-metal phase transition offers the possibility to control dielectric properties and to use them as a triggering element for photonic applications in the wide spectral range from optical to terahertz frequencies. We observed emission of terahertz (THz) radiation from VO2 films in insulating and conductive phase states under femtosecond pulse irradiation. We found that the efficiency of THz emission increases up to 30 times after the insulator-to-metal phase transition. This process occurs in thin films while it is fundamentally forbidden in the bulk material, and polarization analysis of the emitted radiation reveals the crucial importance of interface contributions. The properties of the THz radiation emitted by VO2 are determined by displacement photocurrents at the VO2–air and VO2–substrate interfaces induced by the incident laser light. In each phase state the contributions of the two boundaries are different. Properties of the effective dielectric susceptibility χ(2) tensor for the insulating phase were defined. In demonstrating the conversion of optical into THz radiation in VO2 films, we found that fundamental symmetry restrictions are not applicable to problems of nonlinear optics of thin films.

© 2015 Optical Society of America

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    [Crossref]
  5. F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]

2015 (1)

O. A. Novodvorsky, L. S. Parshina, O. D. Khramova, V. A. Mikhalevsky, K. D. Shcherbachev, and V. Y. Panchenko, “Influence of conditions of pulsed laser deposition on structural, electrical and optical properties of thin VO2 films,” Semiconductors 49, 563–569 (2015).
[Crossref]

2014 (1)

O. A. Novodvorsky, L. S. Parshina, O. D. Khramova, and V. S. Mikhalevskiĭ, “Properties of the VO2 films produced by the droplet-free PLD method,” Comput. Nanotechnol. 1, 56–61 (2014).

2012 (2)

Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
[Crossref]

Y. Zhou and S. Ramanathan, “Heteroepitaxial VO2 thin films on GaN: structure and metal-insulator transition characteristics,” J. Appl. Phys. 112, 074114 (2012).
[Crossref]

2011 (2)

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

G. Ramakrishnan and P. Planken, “Percolation-enhanced generation of terahertz pulses by optical rectification on ultrathin gold films,” Opt. Lett. 36, 2572–2574 (2011).
[Crossref]

2010 (2)

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

S. Lysenko, V. Vikhnin, A. Rúa, F. Fernández, and H. Liu, “Critical behavior and size effects in light-induced transition of nanostructured VO2 films,” Phys. Rev. B 82, 205425 (2010).
[Crossref]

2009 (5)

S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “Optical nonlinearity and structural dynamics of VO2 films,” J. Appl. Phys. 105, 043502 (2009).
[Crossref]

M. M. Nazarov, A. P. Shkurinov, A. A. Angeluts, and D. A. Sapozhnikov, “On the choice of nonlinear optical and semiconductor converters of femtosecond laser pulses into terahertz range,” Radiophys. Quantum Electron. 52, 536–545 (2009).
[Crossref]

J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
[Crossref]

A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, “Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si(001),” Appl. Phys. Lett. 95, 111915 (2009).
[Crossref]

W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
[Crossref]

2008 (2)

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

C. Chen, R. Wang, L. Shang, and C. Guo, “Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections,” Appl. Phys. Lett. 93, 171101 (2008).
[Crossref]

2007 (4)

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

2006 (3)

P. U. Jepsen, B. M. Fischer, A. Thoman, H. Helm, J. Y. Suh, R. Lopez, and R. F. Haglund, “Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy,” Phys. Rev. B 74, 205103 (2006).
[Crossref]

M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
[Crossref]

V. S. Vikhnin, S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “The model of ultrafast light-induced insulator-metal phase transition in VO2,” Solid State Commun. 137, 615–620 (2006).
[Crossref]

2005 (2)

F. Kadlec, P. Kuzel, and J.-L. Coutaz, “Study of terahertz radiation generated by optical rectification on thin gold films,” Opt. Lett. 30, 1402–1404 (2005).
[Crossref]

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

2004 (3)

2003 (2)

S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
[Crossref]

Y. Ningyi, L. Jinhua, H. L. W. Chan, and L. Chenglu, “Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods,” Appl. Phys. A 78, 777–780 (2003).

2002 (2)

1999 (1)

R. T. Kivaisi and M. Samiji, “Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions,” Sol. Energy Mater. Sol. Cells 57, 141–152 (1999).
[Crossref]

1994 (2)

D. H. Kim and H. S. Kwok, “Pulsed laser deposition of VO2 thin films,” Appl. Phys. Lett. 65, 253188 (1994).

M. F. Becker, A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun, “Femtosecond laser excitation of the semiconductor-metal phase transition in VO2,” Appl. Phys. Lett. 65, 1507–1509 (1994).
[Crossref]

1993 (1)

H. K. Kim, H. You, R. P. Chiarello, H. L. M. Chang, T. J. Zhang, and D. J. Lam, “Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition,” Phys. Rev. B 47, 12900–12907 (1993).

1986 (1)

P. Guyot-Sionnest, W. Chen, and Y. R. Shen, “General considerations on optical second-harmonic generation from surfaces and interfaces,” Phys. Rev. B 33, 8254–8263 (1986).
[Crossref]

1971 (1)

J. B. Goodenough, “The two components of crystallographic transition in VO2,” J. Solid State Chem. 3, 490–500 (1971).
[Crossref]

Aggarwal, R.

A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, “Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si(001),” Appl. Phys. Lett. 95, 111915 (2009).
[Crossref]

Ahn, D.

J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
[Crossref]

Ahn, K.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Ahn, K. J.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

Ahn, Y. H.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Andreev, G. O.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Angeluts, A. A.

M. M. Nazarov, A. P. Shkurinov, A. A. Angeluts, and D. A. Sapozhnikov, “On the choice of nonlinear optical and semiconductor converters of femtosecond laser pulses into terahertz range,” Radiophys. Quantum Electron. 52, 536–545 (2009).
[Crossref]

Appavoo, K.

S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
[Crossref]

Averitt, R. D.

Balatsky, A. V.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Basov, D. N.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
[Crossref]

Becker, M. F.

M. F. Becker, A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun, “Femtosecond laser excitation of the semiconductor-metal phase transition in VO2,” Appl. Phys. Lett. 65, 1507–1509 (1994).
[Crossref]

Bernien, H.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Bernussi, A.

Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
[Crossref]

Blondy, P.

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

Boatner, L. A.

R. Lopez, R. F. Haglund, L. C. Feldman, L. A. Boatner, and T. E. Haynes, “Optical nonlinearities in VO2 nanoparticles and thin films,” Appl. Phys. Lett. 85, 225191 (2004).

Brassard, D.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

Brehm, M.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Brener, I.

W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
[Crossref]

Brun, A.

M. F. Becker, A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun, “Femtosecond laser excitation of the semiconductor-metal phase transition in VO2,” Appl. Phys. Lett. 65, 1507–1509 (1994).
[Crossref]

Buckman, A. B.

M. F. Becker, A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun, “Femtosecond laser excitation of the semiconductor-metal phase transition in VO2,” Appl. Phys. Lett. 65, 1507–1509 (1994).
[Crossref]

Burch, K. S.

M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
[Crossref]

Catherinot, A.

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

Chae, B. G.

M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
[Crossref]

Chae, B.-G.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Champeaux, C.

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

Chan, H. L. W.

Y. Ningyi, L. Jinhua, H. L. W. Chan, and L. Chenglu, “Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods,” Appl. Phys. A 78, 777–780 (2003).

Chan, W. L.

W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
[Crossref]

Chang, H. L. M.

H. K. Kim, H. You, R. P. Chiarello, H. L. M. Chang, T. J. Zhang, and D. J. Lam, “Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition,” Phys. Rev. B 47, 12900–12907 (1993).

Chen, C.

Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
[Crossref]

C. Chen, R. Wang, L. Shang, and C. Guo, “Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections,” Appl. Phys. Lett. 93, 171101 (2008).
[Crossref]

Chen, H. T.

W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
[Crossref]

Chen, W.

P. Guyot-Sionnest, W. Chen, and Y. R. Shen, “General considerations on optical second-harmonic generation from surfaces and interfaces,” Phys. Rev. B 33, 8254–8263 (1986).
[Crossref]

Chenglu, L.

Y. Ningyi, L. Jinhua, H. L. W. Chan, and L. Chenglu, “Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods,” Appl. Phys. A 78, 777–780 (2003).

Chiarello, R. P.

H. K. Kim, H. You, R. P. Chiarello, H. L. M. Chang, T. J. Zhang, and D. J. Lam, “Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition,” Phys. Rev. B 47, 12900–12907 (1993).

Cho, S. Y.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

Choe, J. H.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Choi, S. B.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

Cich, M. J.

W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
[Crossref]

Coutaz, J.-L.

Crunteanu, A.

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

Driscoll, T.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

Dumas-Bouchiat, F.

F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, A. Crunteanu, and P. Blondy, “RF-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition,” Appl. Phys. Lett. 91, 223505 (2007).
[Crossref]

Dutta, T.

A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, “Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si(001),” Appl. Phys. Lett. 95, 111915 (2009).
[Crossref]

Ehrke, H.

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

El Khakani, M. A.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

Fan, Z.

Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
[Crossref]

Feldman, L. C.

R. Lopez, R. F. Haglund, L. C. Feldman, L. A. Boatner, and T. E. Haynes, “Optical nonlinearities in VO2 nanoparticles and thin films,” Appl. Phys. Lett. 85, 225191 (2004).

Fernandez, F.

S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “Optical nonlinearity and structural dynamics of VO2 films,” J. Appl. Phys. 105, 043502 (2009).
[Crossref]

V. S. Vikhnin, S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “The model of ultrafast light-induced insulator-metal phase transition in VO2,” Solid State Commun. 137, 615–620 (2006).
[Crossref]

Fernández, F.

S. Lysenko, V. Vikhnin, A. Rúa, F. Fernández, and H. Liu, “Critical behavior and size effects in light-induced transition of nanostructured VO2 films,” Phys. Rev. B 82, 205425 (2010).
[Crossref]

Fischer, B. M.

P. U. Jepsen, B. M. Fischer, A. Thoman, H. Helm, J. Y. Suh, R. Lopez, and R. F. Haglund, “Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy,” Phys. Rev. B 74, 205103 (2006).
[Crossref]

Fisher, G. L.

Foglia, L.

S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
[Crossref]

Fourmaux, S.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

Funk, D. J.

Georges, P.

M. F. Becker, A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun, “Femtosecond laser excitation of the semiconductor-metal phase transition in VO2,” Appl. Phys. Lett. 65, 1507–1509 (1994).
[Crossref]

Goodenough, J. B.

J. B. Goodenough, “The two components of crystallographic transition in VO2,” J. Solid State Chem. 3, 490–500 (1971).
[Crossref]

Guo, C.

C. Chen, R. Wang, L. Shang, and C. Guo, “Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections,” Appl. Phys. Lett. 93, 171101 (2008).
[Crossref]

Gupta, A.

A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, “Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si(001),” Appl. Phys. Lett. 95, 111915 (2009).
[Crossref]

Gupta, P.

A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, “Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si(001),” Appl. Phys. Lett. 95, 111915 (2009).
[Crossref]

Guyot-Sionnest, P.

P. Guyot-Sionnest, W. Chen, and Y. R. Shen, “General considerations on optical second-harmonic generation from surfaces and interfaces,” Phys. Rev. B 33, 8254–8263 (1986).
[Crossref]

Haglund, R. F.

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

P. U. Jepsen, B. M. Fischer, A. Thoman, H. Helm, J. Y. Suh, R. Lopez, and R. F. Haglund, “Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy,” Phys. Rev. B 74, 205103 (2006).
[Crossref]

R. Lopez, R. F. Haglund, L. C. Feldman, L. A. Boatner, and T. E. Haynes, “Optical nonlinearities in VO2 nanoparticles and thin films,” Appl. Phys. Lett. 85, 225191 (2004).

S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
[Crossref]

Halabica, A.

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

Haynes, T. E.

R. Lopez, R. F. Haglund, L. C. Feldman, L. A. Boatner, and T. E. Haynes, “Optical nonlinearities in VO2 nanoparticles and thin films,” Appl. Phys. Lett. 85, 225191 (2004).

Helm, H.

P. U. Jepsen, B. M. Fischer, A. Thoman, H. Helm, J. Y. Suh, R. Lopez, and R. F. Haglund, “Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy,” Phys. Rev. B 74, 205103 (2006).
[Crossref]

Hilton, D. J.

Ho, P.-C.

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Holtz, M.

Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
[Crossref]

Huber, R.

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

Jean-Jacques, M.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

Jepsen, P. U.

P. U. Jepsen, B. M. Fischer, A. Thoman, H. Helm, J. Y. Suh, R. Lopez, and R. F. Haglund, “Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy,” Phys. Rev. B 74, 205103 (2006).
[Crossref]

Jinhua, L.

Y. Ningyi, L. Jinhua, H. L. W. Chan, and L. Chenglu, “Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods,” Appl. Phys. A 78, 777–780 (2003).

Joo, H. J.

J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
[Crossref]

Kadlec, F.

Kang, D. J.

J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
[Crossref]

Keilmann, F.

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Khramova, O. D.

O. A. Novodvorsky, L. S. Parshina, O. D. Khramova, V. A. Mikhalevsky, K. D. Shcherbachev, and V. Y. Panchenko, “Influence of conditions of pulsed laser deposition on structural, electrical and optical properties of thin VO2 films,” Semiconductors 49, 563–569 (2015).
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O. A. Novodvorsky, L. S. Parshina, O. D. Khramova, and V. S. Mikhalevskiĭ, “Properties of the VO2 films produced by the droplet-free PLD method,” Comput. Nanotechnol. 1, 56–61 (2014).

Kieffer, J. C.

D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, “Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films,” Appl. Phys. Lett. 87, 051910 (2005).
[Crossref]

Kim, B. J.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Kim, B.-J.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

Kim, D. H.

D. H. Kim and H. S. Kwok, “Pulsed laser deposition of VO2 thin films,” Appl. Phys. Lett. 65, 253188 (1994).

Kim, D. S.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

Kim, D.-S.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Kim, H. K.

H. K. Kim, H. You, R. P. Chiarello, H. L. M. Chang, T. J. Zhang, and D. J. Lam, “Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition,” Phys. Rev. B 47, 12900–12907 (1993).

Kim, H. S.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

Kim, H. T.

M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
[Crossref]

Kim, H.-S.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Kim, H.-T.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
[Crossref]

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
[Crossref]

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
[Crossref]

Kim, K.

J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
[Crossref]

Kivaisi, R. T.

R. T. Kivaisi and M. Samiji, “Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions,” Sol. Energy Mater. Sol. Cells 57, 141–152 (1999).
[Crossref]

Koo, S.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Kübler, C.

C. Kübler, H. Ehrke, R. Huber, R. Lopez, A. Halabica, R. F. Haglund, and A. Leitenstorfer, “Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2,” Phys. Rev. Lett. 99, 116401 (2007).
[Crossref]

Kuzel, P.

Kužel, P.

Kwok, H. S.

D. H. Kim and H. S. Kwok, “Pulsed laser deposition of VO2 thin films,” Appl. Phys. Lett. 65, 253188 (1994).

Kyoung, J.

M. Seo, J. Kyoung, H. Park, S. Koo, H.-S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H.-T. Kim, N. Park, Q.-H. Park, K. Ahn, and D.-S. Kim, “Active terahertz nanoantennas based on VO2 phase transition,” Nano Lett. 10, 2064–2068 (2010).
[Crossref]

Kyoung, J. S.

S. B. Choi, J. S. Kyoung, H. S. Kim, H. R. Park, D. J. Park, B.-J. Kim, Y. H. Ahn, F. Rotermund, H.-T. Kim, K. J. Ahn, and D. S. Kim, “Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film,” Appl. Phys. Lett. 98, 071105 (2011).
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Lam, D. J.

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W. L. Chan, H. T. Chen, A. J. Taylor, I. Brener, M. J. Cich, and D. M. Mittleman, “A spatial light modulator for terahertz beams,” Appl. Phys. Lett. 94, 213511 (2009).
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B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

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M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
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S. Lysenko, V. Vikhnin, A. Rúa, F. Fernández, and H. Liu, “Critical behavior and size effects in light-induced transition of nanostructured VO2 films,” Phys. Rev. B 82, 205425 (2010).
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M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
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T. Driscoll, S. Palit, M. M. Qazilbash, M. Brehm, F. Keilmann, B.-G. Chae, S.-J. Yun, H.-T. Kim, S. Y. Cho, N. Marie Jokerst, D. R. Smith, and D. N. Basov, “Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide,” Appl. Phys. Lett. 93, 024101 (2008).
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J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
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S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
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V. S. Vikhnin, S. Lysenko, A. Rua, F. Fernandez, and H. Liu, “The model of ultrafast light-induced insulator-metal phase transition in VO2,” Solid State Commun. 137, 615–620 (2006).
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Y. Zhao, J. H. Lee, Y. Zhu, M. Nazari, C. Chen, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, “Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates,” J. Appl. Phys. 111, 053533 (2012).
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Wang, R.

C. Chen, R. Wang, L. Shang, and C. Guo, “Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections,” Appl. Phys. Lett. 93, 171101 (2008).
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S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
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J. I. Sohn, H. J. Joo, D. Ahn, H. H. Lee, A. E. Porter, K. Kim, D. J. Kang, and M. E. Welland, “Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires,” Nano Lett. 9, 3392–3397 (2009).
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M. M. Qazilbash, K. S. Burch, D. Whisler, D. Shrekenhamer, B. G. Chae, H. T. Kim, and D. N. Basov, “Correlated metallic state of vanadium dioxide,” Phys. Rev. B 74, 205118 (2006).
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S. Wall, L. Foglia, D. Wegkamp, K. Appavoo, J. Nag, R. F. Haglund, J. Stähler, and M. Wolf, “Tracking the evolution of electronic and structural properties of VO2 during the ultrafast photoinduced insulator-metal transition,” Phys. Rev. B 87, 115126 (2003).
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H. K. Kim, H. You, R. P. Chiarello, H. L. M. Chang, T. J. Zhang, and D. J. Lam, “Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition,” Phys. Rev. B 47, 12900–12907 (1993).

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B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, “Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor,” Appl. Phys. Lett. 90, 023515 (2007).

M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, “Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging,” Science 318, 1750–1753 (2007).
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Y. Ningyi, L. Jinhua, H. L. W. Chan, and L. Chenglu, “Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods,” Appl. Phys. A 78, 777–780 (2003).

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Figures (7)

Fig. 1.
Fig. 1.

Scheme of the experimental setup. BS, beamsplitter; DL, motorized delay line; ZnTe, 4-mm-thick ZnTe electro-optical crystal; λ/2, λ/4, waveplates; OAP, off-axis parabolic mirror; WP, Wollaston prism; PD1, PD2, balanced photodiodes.

Fig. 2.
Fig. 2.

Result of XRD analysis of VO2/R-Al2O3 film: (a) 2θ-scan, (b) pole figure for reflection at 2θ=37.14°, (c) φ-scan for (0006)Al2O3, and (d) mutual directions of R-cut Al2O3 substrate axes and VO2(200) film axes in its two phase states. For low-temperature phase, both possible VO2 film orientations are shown.

Fig. 3.
Fig. 3.

(a) Temperature dependence of maximum transmitted THz amplitude for 100 nm PLD film. (b) Spectra of THz radiation transmitted through the sample in the conductive and insulating phase state. The black curve represents the reference spectrum with no sample in the THz beam.

Fig. 4.
Fig. 4.

Typical waveform and spectrum of a THz pulse generated in VO2 film on sapphire substrate in conductive (red) and insulating (blue) phase.

Fig. 5.
Fig. 5.

Detected THz amplitude versus laser pulse fluence for semiconductor (red) and conductive (black) states.

Fig. 6.
Fig. 6.

Polarization of the THz radiation generated in the VO2 film grown by MOCVD in (a) insulating and (b) conductive states for different angles between pump polarization and film orientation.

Fig. 7.
Fig. 7.

(a) THz amplitude (black) and polarization direction β (red) of THz radiation versus direction of optical polarization α (a) for insulating phase of the film and (b) for conductive phase. Solid lines show the dependences for the effective χ(2) tensor introduced in Section 5. Squares and circles represent results for two different samples.

Tables (1)

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Table 1. Contrast in THz Absorption and THz Emission upon Phase Transition

Equations (1)

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χxxx(2)=1,χxyy(2)=0.02,χyyx(2)=χyxy(2)=0.12,χyyy(2)=χyxx(2)=χxxy(2)=χxyx(2)=0,

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