Errors have been found in subsection 3.2 (i.e., in page 1384) of our paper [Opt. Mater. Express 8, 1378 (2018) [CrossRef] ] as far as the identification of the grown layers within one period, for the quantum cascade laser structure shown in Figure 1(a). The correct text is as follows.
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The QCL structures were grown via metal-organic chemical vapor deposition (MOCVD) with the core-region layer thicknesses (in Å) for one period, starting right after the exit barrier, being: 26 , , , , 19, , 21, 17, 23, 16, 24, 15, 26, 15, 37, (10), 9, 41, (11), 36, (13), 31, , where normal script are In0.44Al0.56As barriers, bold italic script are In0.6Ga0.4As QWs, bold normal script are In0.7Ga0.3As QWs, italic script are In0.4Al0.6As barriers, bracketed italic script are In0.35Al0.65As barriers, italic script in parentheses are the tall barriers within the active region: In0.37Al0.63As and In0.07Al0.93As, respectively, bracketed bold normal script are In0.68Ga0.32As QWs, bracketed bold italic script is an In0.64Ga0.36As QW, bold script in parentheses is an In0.57Ga0.43As QW, bracketed normal script is the In0.3Al0.7As exit barrier, and underlining indicates the doped layers .
Naval Air Systems Command (N68335-17-C-0466); 711th Human Performance Wing (FA8650-13-2-1616); Army Research Laboratory (W911NF-12-C-0033).
1. D. Botez, J. D. Kirch, C. Boyle, K. M. Oresick, C. Sigler, H. Kim, B. B. Knipfer, J. H. Ryu, D. Lindberg III, T. Earles, L. J. Mawst, and Y.V. Flores, “High-efficiency, high-power mid-infrared quantum cascade lasers [Invited],” Opt. Mater. Express 8(5), 1378–1398 (2018). [CrossRef]