Abstract

Two-dimensional (2D) heterostructure materials have attracted increasing attention in ultrafast nonlinear optical applications due to their intriguing properties. Here, we fabricate a graphene/α-In2Se3 heterostructure by dropping α-In2Se3 dispersion onto the surface of few-layered graphene film and investigate its nonlinear optical responses. We show that the graphene/α-In2Se3 heterostructure has combined advantages of ultrafast relaxation (τ1 ∼ 78 fs, τ2 ∼ 14 ps) and a large effective nonlinear absorption coefficient (βeff ∼ −1.2 × 104 cm/GW) with relatively large modulation depth. We have further integrated the heterostructure into an erbium-doped fiber laser for mode-locked pulse generation. These results indicate that graphene/α-In2Se3 heterostructures are a promising 2D material for ultrafast nonlinear optical applications.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

1. Introduction

In parallel with the research wave of graphene and graphene-like 2D materials, 2D heterostructures have attracted great attentions over the past decade. 2D heterostructure can be artificially assembled by stacking two 2D materials with radically different chemical compositions, band structures or lattice orientations on top of each other [1,2]. The coupling effect and the interfacial charge transfer directly affect their optoelectronic properties, and thus govern the optoelectronic performance of the heterostructure devices [3,4]. Due to their exotic optical functionalities, plenty of photoactive applications using 2D heterostructure have been reported, including photodetectors, photovoltaic solar cells and light-emitting diodes, etc [57]. Among them, the ultrafast photonic applications of 2D heterostructure have attracted increasing attention, and the related ultrafast nonlinear optical properties (including enhanced saturable absorption, ultrafast photoresponses, large modulation depth, low saturable loss, etc.) have been widely investigated [817]. In 2015, Mu et al. showed that the modulation depth of graphene/Bi2Te3 heterostructure is much higher than monolayer graphene, and both the photocarrier dynamics and the nonlinear optical modulation could be tunable by changing the coverage of Bi2Te3 on graphene [8]. Afterwards, the MoS2/graphene nanocomposites were fabricated and investigated by Jiang et al. [9]. Their experiments indicate that both the advantage of ultrafast electron relaxation, broadband response from graphene, and the advantage of strong light-matter interaction from MoS2, can be integrated together by composition. Subsequently, a large number of studies have focused on the ultrafast nonlinear optical properties of different kinds of heterostructure and their related applications [1014,16,17]. These works reveal that the heterostructure technique could combine the advantages of different 2D materials, hence realize novel 2D materials with optimized optoelectronic properties. Besides, it can provide a flexible platform for reaching tunable optical properties by stacking different 2D materials, modifying the thickness of material or tuning the coverage of the materials. It should be noticed that in 2019, few-layered $\alpha $-In2Se3, a III-VI compound with large effective nonlinear absorption coefficient (βeff ∼ −3.9 × 103 cm/GW), has been demonstrated as a promising saturable absorber (SA) in ultrafast all-solid-state bulk lasers by Sun et al. [15]. However, it has a relatively long intra-band carrier relaxation time (270 ps). Inspired by the heterostructure engineering, here, we fabricate high-quality few-layered graphene/α-In2Se3 heterostructure (GIHS) and investigate its linear/nonlinear optical response. Large effective nonlinear absorption coefficient (βeff ∼ −1.2 × 104 cm/GW) comparable to that of α-In2Se3 [15], together with ultrafast intra- and inter-band electron relaxation (78 fs and 14 ps, respectively), are experimentally demonstrated. In addition, using GIHS as a SA in an all-anomalous-dispersion fiber laser for mode-locking, stable soliton pulses centered at 1559.7 nm with 158 fs pulse duration are obtained.

2. Material fabrication and characterization

Few-layered α-In2Se3 nanosheets were synthesized by liquid phase exfoliation (LPE) method [18]. 0.1 g α-In2Se3 powder (Alfa aesar, 99.99%) was added to 10 ml alcohol (30%) and subjected to bath sonication at 300 W for 24 hours. After centrifuging at 8000 rpm for 30 minutes to remove the deposit, few-layered α-In2Se3 nanosheets were obtained. Figure 1(a) depicts the typical multi-layered structure and morphology of α-In2Se3 nanosheets taken by transmission electron microscopy (TEM). Figure 1(b) displays the precise lattice structure of α-In2Se3 with a hexagonal honeycomb structure examined through high-resolution TEM (HRTEM). The lattice spacings are measured to be d1=d2=3.32 Å, d3=3.10 Å, in accordance with the (1120) plane of α-In2Se3, corresponding to the P63/mmc space group. Figure 1(c) shows the selected area electron diffraction (SAED) pattern of α-In2Se3 nanosheets. Well-resolved six-fold rotational symmetric diffraction pattern reveals its good single-crystalline nature and hexagonal structure.

 

Fig. 1. (a) TEM image, (b) HRTEM Image, (c) SAED image of LPE α-In2Se3 nanosheets. (d) AFM Image of GIHS. Above: height variation near the edge of graphene (red line); Below: height variation of α-In2Se3 nanosheets on graphene substrate (blue line). (e) Raman spectrum of GIHS. (f) Optical transmission spectrum of graphene, α-In2Se3, GIHS and quartz substrate.

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In order to investigate the optical properties of the GIHS, three samples (graphene, α-In2Se3 and GIHS) were fabricated on quartz substrate. The graphene we used is synthesized by chemical vapor deposition (XFNano XF024) and transferred to a quartz substrate using a wet transfer method [19]. The α-In2Se3 sample is prepared by dropping α-In2Se3 dispersion on the substrate. To fabricate GIHS, we drop α-In2Se3 dispersion on the CVD graphene and wait several minutes for drying. The atomic force microscopy (Park NX10) results of GIHS is shown in Fig. 1(d). The measured thickness of graphene and α-In2Se3 nanosheet are 5.3 and 3 nm, respectively. Figure 1(e) depicts the Raman spectrum collected from the GIHS sample by a Raman spectrometer (Witec alpha300) with 532 nm excitation laser source. The coexistence of typical Raman peaks of graphene (G and 2D, located at 1583.8 and 2721.4 cm−1) and α-In2Se3 nanosheets (located at 104, 182 and 201 cm−1) indicates the high quality of graphene and α-In2Se3 nanosheets and the successful fabrication of GIHS. The optical transmission spectrum of graphene, α-In2Se3, GIHS and pure quartz substrate are measured by a spectrometer (Agilent Cray 5000), as shown in Fig. 1(f). The transmittance of graphene is about 76.9% at 1030 nm, corresponding to 8 layers (∼5.3 nm) [20], which is in accordance with the AFM results. The transmittance of the α-In2Se3 sample is about 80.6%. From the data reported before [15], its average thickness is estimated to be ∼3 nm and confirmed by AFM measurements. Similarly, the transmittance of GIHS is 67.8% and the average thickness is ∼8 nm. All these parameters are summarized in Table 1.

Tables Icon

Table 1. Nonlinear optical properties of graphene, α-In2Se3 and GIHS samples at 1030 nm

The nonlinear saturable absorption properties were measured by a typical open-aperture Z-scan system with a femtosecond laser (Light Conversion Ltd Pharos) centered at 1030 nm, with 226 fs pulse duration and 1 kHz repetition rate. The corresponding normalized Z-scan curves are shown in Fig. 2. We can see the obvious saturable absorption characteristics of graphene, α-In2Se3 and GIHS, while no signal is observed from glass substrates with pump fluence as high as 189 GW/cm2. At the pump power density of 189 GW/cm2, the nonlinear absorption coefficient βeff of GIHS is derived to be −1.2 × 104 cm/GW by fitting the curve with equation $T({z,S = 1} )\approx 1 - \beta {I_0}{L_{eff}}/(2\sqrt {2({1 + {z^2}/z_0^2} )} $ [21], which is larger than graphene (−5.7 × 103 cm/GW). The modulation depth of graphene and GIHS are fitted to be 16% and 31.5% respectively.

 

Fig. 2. Open-aperture Z-scan measurement of (a) graphene, (b) α-In2Se3 and (c) GIHS.

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To investigate the transient optical response of the GIHS, pump–probe technology is employed to uncover the ultrafast carrier dynamics. The fundamental beam (1030 nm, ∼170 fs pulse duration) from Yb: KGW laser (Light Conversion Ltd Pharos) is separated to two paths. One is introduced into a noncollinear optical parametric amplifier to generate pump pulse at 800 nm, while another is focused onto a YAG crystal to produce white light continuum (520 ∼ 950 nm) as probe light. Photo-bleaching signature deriving from Pauli blocking indicates the as prepared GIHS exhibits strong saturable absorption, as shown in Fig. 3. Fitting the experimental data by a biexponentially decaying function, the intra-band relaxation time (τ1, related to electron–electron scattering and electron–phonon scattering) and inter-band relaxation time (τ2, related to carrier recombination and thermo-phonon cooling) of GIHS is determined to be 78 fs and 14 ps respectively, which is faster than that of α-In2Se3 (e.g., τ1=7.6 ps, τ2=97 ps [15]). Note that graphene is a fast SA and α-In2Se3 is a slow one. Taking advantage of the fast charge transfer and relaxation channel in graphene, the formation of GIHS could speed up the carrier recombination in α-In2Se3.

 

Fig. 3. (a) Transient absorption dynamics of Graphene, α-In2Se3 and GIHS with pump and probe wavelengths of 800 nm and 750 nm, respectively. (b) Long scale of transient absorption dynamics of α-In2Se3 and GIHS.

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3. Mode-locked fiber laser applications

To fabricate the in-line GIHS on fiber facet, a step-by-step transfer method was used. Few-layered graphene was exfoliated from bulk highly oriented pyrolytic graphite (HOPG) and transferred to the end-facet of fiber connector via PDMS. The α-In2Se3 dispersion (1mg/ml) was dropped on the surface of graphene and waited several minutes for drying. It should be noticed that we use exfoliated graphene here since it is convenient to fabricate and its surface condition is even better than CVD graphene used in previous experiments. They have almost the same thickness (∼5.3 nm, 8 layers) and possess similar optical properties. The optical image of in-line GIHS is shown in Fig. 4(a). The GIHS coated fiber connector (FC) is connected to a clean FC with a fiber adapter to form in-line GIHS mode-locker. Balanced twin-detector equipment is used to measure its saturable absorption properties. The optical source is a mode-locked fiber laser worked at 1550 nm with 2 ps pulse duration and 10 MHz repetition rates. Fitting with the equation $\alpha = {\alpha _{ns}} + {\alpha _s}/({1 + I/{I_s}} )$ [22], the modulation depth and saturable intensity of in-line GIHS are 8.4% and 315.8 MW/cm2 respectively, as shown in Fig. 4(b).

 

Fig. 4. (a) Optical image of GIHS on fiber facet. (b) Nonlinear saturable absorption curve of in-line GIHS SA and graphene. (c) Schematics of the typical erbium-doped fiber laser for passive mode-locking operation with GIHS SA. (d) Output spectrum with 0.02 nm spectral resolution. (e) Oscilloscope trace of output pulse trains; inset: RF spectrum; (f) Interferometric autocorrelation trace of output pulses after amplification and compression.

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The schematic of the all-fiber GIHS ring laser is shown in Fig. 4(c). A 0.43-m-long erbium-doped fiber (EDF, Liekki Er110-4/125) with group velocity dispersion (GVD) of 12 ps2/km is served as gain medium. The pump source is a 750 mW/980 nm laser diode (LD), which is injected into the cavity through a 980/1550 nm wavelength division multiplexer/isolator hybrid (WDM + ISO). The as prepared in-line GIHS is spliced into the laser cavity as a SA. A polarization controllers (PC) is engaged to adjust the polarization state of the propagation light for mode-locking optimization. The total cavity length is 5.3 m consisting of single mode fiber (SMF-28e) with GVD parameter −23 ps2/km, and the net cavity dispersion is about −0.102 ps2. Taken by a 10% optical coupler (OC), the optical pulse signal is monitored by a commercial optical spectrum analyzer (Yokogawa AQ6370D), a 3-GHz digital oscilloscope (LeCroy WavePro7300) together with a 1 GHz photodetector (Thorlabs DET01CFC), a radio frequency (RF) spectrum analyzer (Rigol DSA1030) and a commercial autocorrelator (APE Pulsecheck-USB-50). Due to the saturable absorption of the GIHS, self-starting mode-locking operation is obtained when the pump power reaches up to a mode-locking threshold of 35 mW. The optical damage of the GIHS SA appears when the pump power is beyond 280 mW. Figure 4 summarized the mode-locking characteristics under the pump power of 104 mW. The maximum output power is 2.72 mW, corresponding to the pulse energy of 0.07 nJ. Figure 4(d) presents the optical spectrum of the passive mode-locked output, which operates at 1559.7 nm central wavelength with a 3-dB bandwidth of 5.5 nm. The Kelly sidebands are symmetrically distributed at both sides of the spectrum, which indicates the mode-locking operation works in soliton state. The oscilloscope trace of output pulse trains and its Fourier-transform spectrum are shown in Fig. 4(e). The period is 26.94 ns, matching exactly well with total cavity length of 5.3 m. The inset of Fig. 4(e) shows the RF spectrum around the fundamental repetition rate of 38.556 MHz with 100 Hz resolution bandwidth (RBW). The signal-to-noise ratio (SNR) is ∼45 dB, which indicates good mode-locking stability of the GIHS laser. The mode-locking operation can work continuously over 12 h under ambient environment. The output pulses are amplified by a home-made Erbium-doped fiber amplifier (EDFA) and compressed by a section of dispersion compensation fiber. The measured interferometric autocorrelations (IACs) has a full width at half maximum (FWHM) width of 245 fs, as shown in Fig. 4(f), which is the narrowest pulse duration we have measured. Assuming a Sech2 pulse profile, the soliton pulse duration is estimated to be about 158 fs. The special advantages of GIHS is that it has combined advantages of ultrafast relaxation (τ1 ∼ 78 fs, τ2 ∼ 14 ps) together with large effective nonlinear absorption coefficient (βeff ∼ −1.2 × 104 cm/GW). Besides, GIHS could be a broadband SA. Recently, many novel 2D materials with unique and attractive optical characteristics have been reported for mode-locking applications [2326]. We believe these materials could enrich the family of 2D heterostructure for ultrafast nonlinear optical applications.

Conclusion

We report nonlinear optical properties of few-layered GIHS and use it as a SA for ultrafast laser pulses generation. The GIHS owns remarkable characteristics including ultrafast relaxation (τ1 ∼ 78 fs, τ2 ∼ 14 ps), large effective nonlinear absorption coefficient (βeff ∼ −1.2 × 104 cm/GW) and relatively large modulation depth. By integrated it into Erbium-doped fiber laser system, stable mode-locking soliton pulses with 158 fs pulse duration and 2.72 mW average power is successfully generated. The excellent nonlinear optical properties of the GIHS endorses it as a promising candidate for ultrafast nonlinear photonic applications.

Funding

National Key Research and Development Program of China (2018YFB2200404); Fundamental Research Funds for the Central Universities (2019FZA5003); National Natural Science Foundation of China (11774308, 61635009, 91950205).

Acknowledgements

This research was supported by the National Key Research and Development Project of China (2018YFB2200404), the National Natural Science Foundation of China (91950205 and 61635009), the Fundamental Research Funds for the Central Universities (2019FZA5003) and the General program (11774308).

Disclosures

The authors declare that there are no conflicts of interest related to this article.

References

1. H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014). [CrossRef]  

2. K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016). [CrossRef]  

3. Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019). [CrossRef]  

4. M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020). [CrossRef]  

5. P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019). [CrossRef]  

6. F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019). [CrossRef]  

7. J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020). [CrossRef]  

8. H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015). [CrossRef]  

9. Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015). [CrossRef]  

10. C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

11. Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017). [CrossRef]  

12. Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017). [CrossRef]  

13. H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017). [CrossRef]  

14. W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018). [CrossRef]  

15. X. Sun, J. He, B. Shi, B. Zhang, K. Yang, C. Zhang, and R. Wang, “Alpha-phase indium selenide saturable absorber for a femtosecond all-solid-state laser,” Opt. Lett. 44(3), 699 (2019). [CrossRef]  

16. L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020). [CrossRef]  

17. W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020). [CrossRef]  

18. Y. Cui and X. Liu, “Graphene and nanotube mode-locked fiber laser emitting dissipative and conventional solitons,” Opt. Express 21(16), 18969 (2013). [CrossRef]  

19. X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016). [CrossRef]  

20. S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014). [CrossRef]  

21. U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008). [CrossRef]  

22. R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015). [CrossRef]  

23. Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018). [CrossRef]  

24. B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018). [CrossRef]  

25. H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019). [CrossRef]  

26. T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020). [CrossRef]  

References

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  1. H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
    [Crossref]
  2. K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
    [Crossref]
  3. Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
    [Crossref]
  4. M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
    [Crossref]
  5. P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
    [Crossref]
  6. F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
    [Crossref]
  7. J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020).
    [Crossref]
  8. H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
    [Crossref]
  9. Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
    [Crossref]
  10. C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).
  11. Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
    [Crossref]
  12. Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
    [Crossref]
  13. H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
    [Crossref]
  14. W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
    [Crossref]
  15. X. Sun, J. He, B. Shi, B. Zhang, K. Yang, C. Zhang, and R. Wang, “Alpha-phase indium selenide saturable absorber for a femtosecond all-solid-state laser,” Opt. Lett. 44(3), 699 (2019).
    [Crossref]
  16. L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
    [Crossref]
  17. W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
    [Crossref]
  18. Y. Cui and X. Liu, “Graphene and nanotube mode-locked fiber laser emitting dissipative and conventional solitons,” Opt. Express 21(16), 18969 (2013).
    [Crossref]
  19. X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
    [Crossref]
  20. S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
    [Crossref]
  21. U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
    [Crossref]
  22. R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
    [Crossref]
  23. Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
    [Crossref]
  24. B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018).
    [Crossref]
  25. H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
    [Crossref]
  26. T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
    [Crossref]

2020 (5)

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020).
[Crossref]

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

2019 (5)

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

X. Sun, J. He, B. Shi, B. Zhang, K. Yang, C. Zhang, and R. Wang, “Alpha-phase indium selenide saturable absorber for a femtosecond all-solid-state laser,” Opt. Lett. 44(3), 699 (2019).
[Crossref]

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

2018 (3)

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018).
[Crossref]

2017 (3)

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
[Crossref]

2016 (2)

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

2015 (3)

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

2014 (2)

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
[Crossref]

2013 (1)

2008 (1)

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Bao, Q.

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Brooks, E.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Bubb, D. M.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Carvalho, A.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

Castro Neto, A. H.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

Chen, C.

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Chen, F.

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Chen, H.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
[Crossref]

Chen, L.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Chen, S.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Chen, X.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Chen, Y.

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Cheng, X.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Cui, Y.

Dai, L.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Deng, G.

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Dong, W.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Du, W.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Fan, D.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Fang, S.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Fang, Z.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Fu, W.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Ge, Y.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018).
[Crossref]

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Gong, F.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Guo, B.

Guo, T.

Gurudas, U.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Hasan, T.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

He, J.

He, T.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

He, Z.

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Heiroth, S.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Howe, R. C. T.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Hu, G.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Hu, W.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Huang, H.

Ideue, T.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Iwasa, Y.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Janssen, G. C. A. M.

S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
[Crossref]

Jiang, G.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Jiang, T.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Jiang, X.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Jiang, Y.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Jiang, Z.

Kelleher, E. J. R.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Lan, C.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Lei, M.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Li, C.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Li, H.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Li, J.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Li, P.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Li, W.

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Li, Y.

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Liang, Z.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Lin, D.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Lippert, T.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Liu, C.

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Liu, F.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Liu, J.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Liu, L.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Liu, M.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
[Crossref]

Liu, S.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Liu, W.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
[Crossref]

Liu, X.

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Y. Cui and X. Liu, “Graphene and nanotube mode-locked fiber laser emitting dissipative and conventional solitons,” Opt. Express 21(16), 18969 (2013).
[Crossref]

Liu, Y.

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

Liu, Z.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Long, H.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Long, M.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Lu, W.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Ma, S.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Miao, L.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Miao, R.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Mishchenko, A.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

Motome, Y.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Mu, H.

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Nakagawa, Y.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Novoselov, K. S.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

Onga, M.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Ouyang, H.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Qarony, W.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Qi, X.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Qu, J.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Ren, W.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Shi, B.

Song, J.

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Song, Y.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Sugita, Y.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Sun, H.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Sun, X.

Sun, Z.

Suzuki, R.

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Tan, Y.

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Tang, C. Y.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Taniguchi, T.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Teng, H.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Tong, L.

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Torrisi, F.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Tsang, Y. H.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Wang, C.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Wang, D.

Wang, H.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Wang, J.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

H. Chen, J. Yin, J. Yang, X. Zhang, M. Liu, Z. Jiang, J. Wang, Z. Sun, T. Guo, W. Liu, and P. Yan, “Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics,” Opt. Lett. 42(21), 4279–4282 (2017).
[Crossref]

Wang, P.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Wang, R.

Wang, S.

Wang, T.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Wang, Y.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Wang, Z.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

W. Du, H. Li, C. Lan, C. Li, J. Li, Z. Wang, and Y. Liu, “Graphene/WS2 heterostructure saturable absorbers for ultrashort pulse generation in L-band passively mode-locked fiber lasers,” Opt. Express 28(8), 11514–11523 (2020).
[Crossref]

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018).
[Crossref]

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Watanabe, K.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Wei, K.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Wei, Z.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Wen, B.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Wen, Q.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Wen, S.

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Wokaun, A.

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Woodward, R. I.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Wu, F.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Wu, X.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Wu, Z.

Xia, H.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Xiao, S.

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Xu, N.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Xu, S.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Xu, Y.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Xu, Z.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Xue, Y.

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Yan, P.

Yang, G.

J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020).
[Crossref]

Yang, H.

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Yang, J.

Yang, K.

Yao, J.

J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020).
[Crossref]

Ye, Y.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Yin, J.

Yin, K.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

You, J.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Yu, S.

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Yuan, H.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Yuan, J.

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Yuan, K.

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Yuan, S.

S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
[Crossref]

Zeng, H.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Zeng, L. H.

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Zhang, B.

Zhang, C.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

X. Sun, J. He, B. Shi, B. Zhang, K. Yang, C. Zhang, and R. Wang, “Alpha-phase indium selenide saturable absorber for a femtosecond all-solid-state laser,” Opt. Lett. 44(3), 699 (2019).
[Crossref]

Zhang, F.

Zhang, H.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

B. Guo, S. Wang, Z. Wu, Z. Wang, D. Wang, H. Huang, F. Zhang, Y. Ge, and H. Zhang, “Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber,” Opt. Express 26(18), 22750 (2018).
[Crossref]

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Zhang, J.

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Zhang, L.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Zhang, M.

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

Zhang, R.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Zhang, W.

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Zhang, X.

Zhao, C.

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

Zhao, M.

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Zhao, Y.

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Zheng, X.

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

Zhou, H.

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Zhou, W.

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

Zhu, H.

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Zhu, S.

S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
[Crossref]

Zhu, Y.

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

Zhu, Z.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Zou, Y.

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

ACS Photonics (2)

H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, and Q. Bao, “Graphene-Bi2Te3 Heterostructure as Saturable Absorber for Short Pulse Generation,” ACS Photonics 2(7), 832–841 (2015).
[Crossref]

Y. Tan, X. Liu, Z. He, Y. Liu, M. Zhao, H. Zhang, and F. Chen, “Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications,” ACS Photonics 4(6), 1531–1538 (2017).
[Crossref]

Adv. Funct. Mater. (1)

F. Wu, H. Xia, H. Sun, J. Zhang, F. Gong, Z. Wang, L. Chen, P. Wang, M. Long, X. Wu, J. Wang, W. Ren, X. Chen, W. Lu, and W. Hu, “AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity,” Adv. Funct. Mater. 29(12), 1900314 (2019).
[Crossref]

Adv. Opt. Mater. (1)

Y. Ge, Z. Zhu, Y. Xu, Y. Chen, S. Chen, Z. Liang, Y. Song, Y. Zou, H. Zeng, S. Xu, H. Zhang, and D. Fan, “Broadband nonlinear photoresponse of 2D TiS2 for ultrashort pulse generation and all-optical thresholding devices,” Adv. Opt. Mater. 6(4), 1701166 (2018).
[Crossref]

Carbon (1)

X. Wu, S. Yu, H. Yang, W. Li, X. Liu, and L. Tong, “Effective transfer of micron-size graphene to microfibers for photonic applications,” Carbon 96, 1114–1119 (2016).
[Crossref]

Europhys. Lett. (1)

S. Zhu, S. Yuan, and G. C. A. M. Janssen, “Optical transmittance of multilayer graphene,” Europhys. Lett. 108(1), 17007 (2014).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

Z. Wang, H. Mu, J. Yuan, C. Zhao, Q. Bao, and H. Zhang, “Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 195–199 (2017).
[Crossref]

J. Appl. Phys. (1)

U. Gurudas, E. Brooks, D. M. Bubb, S. Heiroth, T. Lippert, and A. Wokaun, “Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses,” J. Appl. Phys. 104(7), 073107 (2008).
[Crossref]

Laser Photonics Rev. (1)

L. Zhang, J. Liu, J. Li, Z. Wang, Y. Wang, Y. Ge, W. Dong, N. Xu, T. He, H. Zhang, and W. Zhang, “Site-Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics,” Laser Photonics Rev. 14(4), 1900409 (2020).
[Crossref]

Nano Lett. (1)

M. Onga, Y. Sugita, T. Ideue, Y. Nakagawa, R. Suzuki, Y. Motome, and Y. Iwasa, “Antiferromagnet-Semiconductor Van Der Waals Heterostructures: Interlayer Interplay of Exciton with Magnetic Ordering,” Nano Lett. 20(6), 4625–4630 (2020).
[Crossref]

Nanoscale (2)

H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, “Two-dimensional heterostructures: fabrication, characterization, and application,” Nanoscale 6(21), 12250–12272 (2014).
[Crossref]

J. Yao and G. Yang, “2D material broadband photodetectors,” Nanoscale 12(2), 454–476 (2020).
[Crossref]

Nanotechnology (1)

H. Long, S. Liu, Q. Wen, H. Yuan, C. Y. Tang, J. Qu, S. Ma, W. Qarony, L. H. Zeng, and Y. H. Tsang, “In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking,” Nanotechnology 30(46), 465704 (2019).
[Crossref]

Opt. Express (3)

Opt. Lett. (2)

Photonics Res. (3)

W. Liu, Y. Zhu, M. Liu, B. Wen, S. Fang, H. Teng, M. Lei, L. Liu, and Z. Wei, “Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials,” Photonics Res. 6(3), 220–227 (2018).
[Crossref]

T. Jiang, K. Yin, C. Wang, J. You, H. Ouyang, R. Miao, C. Zhang, K. Wei, H. Li, H. Chen, R. Zhang, X. Zheng, Z. Xu, X. Cheng, and H. Zhang, “Ultrafast fiber lasers mode-locked by two-dimensional materials: review and prospect,” Photonics Res. 8(1), 78–90 (2020).
[Crossref]

R. I. Woodward, R. C. T. Howe, G. Hu, F. Torrisi, M. Zhang, T. Hasan, and E. J. R. Kelleher, “Few-layer MoS2 saturable absorbers for short-pulse laser technology: current status and future perspectives,” Photonics Res. 3(2), A30–A42 (2015).
[Crossref]

RSC Adv. (1)

P. Li, K. Yuan, D. Lin, T. Wang, W. Du, Z. Wei, K. Watanabe, T. Taniguchi, Y. Ye, and L. Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices,” RSC Adv. 9(60), 35039–35044 (2019).
[Crossref]

Sci. Adv. (1)

Y. Chen, Y. Li, Y. Zhao, H. Zhou, and H. Zhu, “Highly efficient hot electron harvesting from graphene before electron-hole thermalization,” Sci. Adv. 5(11), eaax9958 (2019).
[Crossref]

Sci. Rep. (1)

Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, and S. Wen, “Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications,” Sci. Rep. 5(1), 16372 (2015).
[Crossref]

Science (1)

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref]

Other (1)

C. Liu, H. Li, G. Deng, C. Lan, C. Li, and Y. Liu, “Femtosecond Er-Doped Fiber Laser Using a Graphene/MoS2 Heterostructure Saturable Absorber,” Asia Communications and Photonics Conferene (IEEE, Wuhan, 2016).

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Figures (4)

Fig. 1.
Fig. 1. (a) TEM image, (b) HRTEM Image, (c) SAED image of LPE α-In2Se3 nanosheets. (d) AFM Image of GIHS. Above: height variation near the edge of graphene (red line); Below: height variation of α-In2Se3 nanosheets on graphene substrate (blue line). (e) Raman spectrum of GIHS. (f) Optical transmission spectrum of graphene, α-In2Se3, GIHS and quartz substrate.
Fig. 2.
Fig. 2. Open-aperture Z-scan measurement of (a) graphene, (b) α-In2Se3 and (c) GIHS.
Fig. 3.
Fig. 3. (a) Transient absorption dynamics of Graphene, α-In2Se3 and GIHS with pump and probe wavelengths of 800 nm and 750 nm, respectively. (b) Long scale of transient absorption dynamics of α-In2Se3 and GIHS.
Fig. 4.
Fig. 4. (a) Optical image of GIHS on fiber facet. (b) Nonlinear saturable absorption curve of in-line GIHS SA and graphene. (c) Schematics of the typical erbium-doped fiber laser for passive mode-locking operation with GIHS SA. (d) Output spectrum with 0.02 nm spectral resolution. (e) Oscilloscope trace of output pulse trains; inset: RF spectrum; (f) Interferometric autocorrelation trace of output pulses after amplification and compression.

Tables (1)

Tables Icon

Table 1. Nonlinear optical properties of graphene, α-In2Se3 and GIHS samples at 1030 nm

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