Abstract

Lanthanum modified lead zirconate titanate (PLZT) thin films were prepared by sol-gel and the plasma annealing process. The PLZT thin films are pure perovskite phase and highly crystalline. The polarization-electric loops confirmed quadratic PLZT thin films. The optical properties were determined by a spectroscopic ellipsometry analyzer, showing an absorption coefficient of near zero and an energy gap of around 3.6 eV. The insertion losses of the optical devices based on PLZT films are less than 5 dB. These films have the potential to be applied in the field of integrated nanophotonic devices.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
    [Crossref]
  2. X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
    [Crossref]
  3. B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
    [Crossref]
  4. Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
    [Crossref]
  5. G. H. Haertling, “Improved Hot-Pressed Electrooptic Ceramics in the (Pb, La) (Zr, Ti)O3 System,” J. Am. Ceram. Soc. 54(6), 303–309 (1971).
    [Crossref]
  6. C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
    [Crossref]
  7. J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
    [Crossref]
  8. J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
    [Crossref]
  9. A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.
  10. F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
    [Crossref]
  11. Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
    [Crossref]
  12. K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
    [Crossref]
  13. R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
    [Crossref]
  14. L. B. Kong and J. Ma, “Preparation and characterization of antiferroelectric PLZT 2/95/5 thin films via a sol-gel process,” Mater. Lett. 56(1-2), 30–37 (2002).
    [Crossref]
  15. P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
    [Crossref]
  16. J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.
  17. F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
    [Crossref]
  18. Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
    [Crossref]
  19. A. A. Jeyaseelan and S. Dutta, “Effect of ligand concentration on microstructure, ferroelectric and piezoelectric properties of PLZT film,” Mater. Chem. Phys. 162, 487–490 (2015).
    [Crossref]
  20. G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
    [Crossref]
  21. V. M. Fridkin, “The Anomalous Photovoltaic Effect in Ferroelectrics,” Usp. Fiz. Nauk 126(12), 657–671 (1978).
    [Crossref]
  22. V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
    [Crossref]
  23. M. A. Lieberman and R. A. Gottscho, “Design of High-Density Plasma Sources for Materials Processing,” Phys. Thin Films 18, 1–119 (1994).
    [Crossref]
  24. C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
    [Crossref]
  25. O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
    [Crossref]
  26. J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
    [Crossref]
  27. N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
    [Crossref]
  28. H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
    [Crossref]
  29. X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
    [Crossref]
  30. J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
    [Crossref]
  31. S. Miga and K. WaJcik, “Investigation of the diffuse phase transition in PLZT X/65/35 ceramics, X = 7–10,” Ferroelectrics 100(1), 167–173 (1989).
    [Crossref]
  32. R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
    [Crossref]
  33. H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
    [Crossref]
  34. W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
    [Crossref]

2017 (3)

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

2016 (3)

V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
[Crossref]

F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
[Crossref]

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

2015 (4)

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

A. A. Jeyaseelan and S. Dutta, “Effect of ligand concentration on microstructure, ferroelectric and piezoelectric properties of PLZT film,” Mater. Chem. Phys. 162, 487–490 (2015).
[Crossref]

2014 (2)

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

2013 (2)

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

2011 (1)

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

2008 (1)

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

2007 (2)

Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
[Crossref]

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

2005 (2)

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

2004 (1)

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

2003 (2)

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

2002 (2)

L. B. Kong and J. Ma, “Preparation and characterization of antiferroelectric PLZT 2/95/5 thin films via a sol-gel process,” Mater. Lett. 56(1-2), 30–37 (2002).
[Crossref]

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

1997 (1)

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

1994 (1)

M. A. Lieberman and R. A. Gottscho, “Design of High-Density Plasma Sources for Materials Processing,” Phys. Thin Films 18, 1–119 (1994).
[Crossref]

1989 (1)

S. Miga and K. WaJcik, “Investigation of the diffuse phase transition in PLZT X/65/35 ceramics, X = 7–10,” Ferroelectrics 100(1), 167–173 (1989).
[Crossref]

1987 (1)

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

1979 (1)

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

1978 (1)

V. M. Fridkin, “The Anomalous Photovoltaic Effect in Ferroelectrics,” Usp. Fiz. Nauk 126(12), 657–671 (1978).
[Crossref]

1971 (1)

G. H. Haertling, “Improved Hot-Pressed Electrooptic Ceramics in the (Pb, La) (Zr, Ti)O3 System,” J. Am. Ceram. Soc. 54(6), 303–309 (1971).
[Crossref]

Ai, D.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Balachandran, U.

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Batra, V.

V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
[Crossref]

Beeckman, J.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Bhaskaran, M.

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

Bilodeau, S. M.

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Bisson, J. F.

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

Bliznuk, V.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Botterman, J.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Brennecka, G. L.

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

Brownshaklee, H. J.

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

Chan, K. Y.

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

Chao, S.

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Chen, J.

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

Chen, Q.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Cheng, J.

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

Choi, J.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Chou, H. H.

F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
[Crossref]

Craciun, F.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Crossland, W. A.

F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
[Crossref]

Cui, Y.

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

Dinescu, M.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Ding, A. L.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Dong, H.

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

Du, Z. H.

Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
[Crossref]

Dutta, S.

A. A. Jeyaseelan and S. Dutta, “Effect of ligand concentration on microstructure, ferroelectric and piezoelectric properties of PLZT film,” Mater. Chem. Phys. 162, 487–490 (2015).
[Crossref]

Fang, Z.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Fridkin, V. M.

V. M. Fridkin, “The Anomalous Photovoltaic Effect in Ferroelectrics,” Usp. Fiz. Nauk 126(12), 657–671 (1978).
[Crossref]

Galassi, C.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Gao, J.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

George, J. P.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Gomah-Pettry, J. R.

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

Gottscho, R. A.

M. A. Lieberman and R. A. Gottscho, “Design of High-Density Plasma Sources for Materials Processing,” Phys. Thin Films 18, 1–119 (1994).
[Crossref]

Haertling, G. H.

G. H. Haertling, “Improved Hot-Pressed Electrooptic Ceramics in the (Pb, La) (Zr, Ti)O3 System,” J. Am. Ceram. Soc. 54(6), 303–309 (1971).
[Crossref]

Hamakawa, Y.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Hao, X.

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

Hayashi, K.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Holland, A. S.

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

Holzapfel, B.

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

Hu, G.

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

Hu, Z.

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

Huang, C.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Ishida, T.

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

Jeyaseelan, A. A.

A. A. Jeyaseelan and S. Dutta, “Effect of ligand concentration on microstructure, ferroelectric and piezoelectric properties of PLZT film,” Mater. Chem. Phys. 162, 487–490 (2015).
[Crossref]

Jiang, A. H.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Jiang, S.

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Kaemmer, K.

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

Khadem, M.

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

Kim, D. E.

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

Kong, L. B.

L. B. Kong and J. Ma, “Preparation and characterization of antiferroelectric PLZT 2/95/5 thin films via a sol-gel process,” Mater. Lett. 56(1-2), 30–37 (2002).
[Crossref]

Kotru, S.

V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
[Crossref]

Lee, C.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Lee, S. H. B. T.

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Leech, P. W.

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

Li, K. K.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Lieberman, M. A.

M. A. Lieberman and R. A. Gottscho, “Design of High-Density Plasma Sources for Materials Processing,” Phys. Thin Films 18, 1–119 (1994).
[Crossref]

Lim, W. S.

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

Lima, R. S.

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

Ling, B. K.

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

Liu, L.

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Liu, S.

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Liu, Y.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

Lu, G.

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

Luo, W. G.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Ma, B.

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Ma, J.

Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
[Crossref]

L. B. Kong and J. Ma, “Preparation and characterization of antiferroelectric PLZT 2/95/5 thin films via a sol-gel process,” Mater. Lett. 56(1-2), 30–37 (2002).
[Crossref]

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Maeoka, T.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Mak, C. L.

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

Marchet, P.

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

Marple, B. R.

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

Matsui, Y.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Mercurio, J. P.

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

Miga, S.

S. Miga and K. WaJcik, “Investigation of the diffuse phase transition in PLZT X/65/35 ceramics, X = 7–10,” Ferroelectrics 100(1), 167–173 (1989).
[Crossref]

Mihara, T.

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

Ming, H.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Mochizuki, S.

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

Moldovan, A.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Moore, N. W.

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

Moreau, C.

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

Nagamori, Y.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Nakagawa, T.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Narayanan, M.

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Neyts, K.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

No, K.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Okada, H.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Okamoto, S.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Okuyama, M.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Ozguz, V. H.

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Penkov, O. V.

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

Purice, A.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Qi, Z.

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

Ramana, C. V.

V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
[Crossref]

Ren, X.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

Rodriguez, M. A.

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

Roeder, J. F.

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Saïd, S.

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

Scarisoreanu, N.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Schultz, L.

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

Shen, M.

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Smet, P. F.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Sriram, S.

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

Sun, J.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Takada, H.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Thielsch, R.

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

Thomas, R.

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

Tian, H. Y.

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Tong, S.

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Tsang, W. S.

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

Usuki, T.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Van, T. D.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Van Buskirk, P. C.

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

Verardi, P.

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

WaJcik, K.

S. Miga and K. WaJcik, “Investigation of the diffuse phase transition in PLZT X/65/35 ceramics, X = 7–10,” Ferroelectrics 100(1), 167–173 (1989).
[Crossref]

Wang, D.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

Wang, H.

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Wang, Q.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Wang, Y.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Woestenborghs, W.

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Wong, K. H.

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

Xia, J.

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Xu, J.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

Xu, J.-W.

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Xu, Z.

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

Yamaguchi, J.

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Yamamoto, T.

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

Yang, L.

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Yao, X.

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

Yi, J.

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Yuan, C.-L.

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Yun, B.

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

Zhai, J.

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

Zhang, F.

F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
[Crossref]

Zhang, R.

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Zhang, T. S.

Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
[Crossref]

Zhang, X.

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Zhao, L.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Zheng, Z. Q.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

Zhong, L.

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

Zhou, W.

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

Zou, Y. K.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

ACS Appl. Mater. Interfaces (1)

J. P. George, P. F. Smet, J. Botterman, V. Bliznuk, W. Woestenborghs, T. D. Van, K. Neyts, and J. Beeckman, “Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices,” ACS Appl. Mater. Interfaces 7(24), 13350–13359 (2015).
[Crossref]

Appl. Phys. A (2)

P. W. Leech, A. S. Holland, S. Sriram, and M. Bhaskaran, “Patterning of PLZT and PSZT thin films by excimer laser,” Appl. Phys. A 91(4), 679–684 (2008).
[Crossref]

J. Yi, X. Zhang, M. Shen, S. Jiang, and J. Xia, “Enhanced transmittance properties in Pb0.865La0.09 (Zr0.65Ti0.35) O3 thin films deposited by pulsed laser deposition,” Appl. Phys. A 120(3), 835–840 (2015).
[Crossref]

Appl. Phys. Lett. (1)

W. S. Tsang, K. Y. Chan, C. L. Mak, and K. H. Wong, “Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3–PbTiO3/MgO/TiN/Si heterostructures,” Appl. Phys. Lett. 83(8), 1599–1601 (2003).
[Crossref]

Appl. Surf. Sci. (2)

V. Batra, C. V. Ramana, and S. Kotru, “Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films,” Appl. Surf. Sci. 379, 191–198 (2016).
[Crossref]

F. Craciun, M. Dinescu, P. Verardi, N. Scarisoreanu, A. Moldovan, A. Purice, and C. Galassi, “Structural and electrical characterization of PLZT 22/20/80 relaxor films obtained by PLD and RF–PLD,” Appl. Surf. Sci. 248(1-4), 329–333 (2005).
[Crossref]

Bull. Mater. Sci. (1)

H. Wang, L. Liu, J.-W. Xu, C.-L. Yuan, and L. Yang, “Effects of Bi doping on dielectric and ferroelectric properties of PLBZT;ferroelectric thin films synthesized by sol-gel processing,” Bull. Mater. Sci. 36(3), 389–393 (2013).
[Crossref]

Ceram. Int. (1)

Z. Hu, B. Ma, S. Liu, M. Narayanan, and U. Balachandran, “Relaxor Behavior and Energy Storage Performance of Ferroelectric PLZT Thin Films with Different Zr/Ti Ratios,” Ceram. Int. 40(1), 557–562 (2014).
[Crossref]

Ferroelectrics (2)

X. Hao, J. Zhai, J. Xu, and X. Yao, “Preparation of PLZT Antiferroelectric Thin Films on ZrO2 Buffered Substrates,” Ferroelectrics 357(1), 253–258 (2007).
[Crossref]

S. Miga and K. WaJcik, “Investigation of the diffuse phase transition in PLZT X/65/35 ceramics, X = 7–10,” Ferroelectrics 100(1), 167–173 (1989).
[Crossref]

IEEE Photonics J. (1)

F. Zhang, H. H. Chou, and W. A. Crossland, “PLZT-Based Shutters for Free-Space Optical Fiber Switching,” IEEE Photonics J. 8(1), 1–12 (2016).
[Crossref]

J. Alloys Compd. (1)

C. Huang, J. Xu, Z. Fang, D. Ai, W. Zhou, L. Zhao, J. Sun, and Q. Wang, “Effect of preparation process on properties of PLZT (9/65/35) transparent ceramics,” J. Alloys Compd. 723, 602–610 (2017).
[Crossref]

J. Am. Ceram. Soc. (1)

G. H. Haertling, “Improved Hot-Pressed Electrooptic Ceramics in the (Pb, La) (Zr, Ti)O3 System,” J. Am. Ceram. Soc. 54(6), 303–309 (1971).
[Crossref]

J. Appl. Phys. (1)

N. W. Moore, H. J. Brownshaklee, M. A. Rodriguez, and G. L. Brennecka, “Optical anisotropy near the relaxor-ferroelectric phase transition in lanthanum lead zirconate titanate,” J. Appl. Phys. 114(5), 53515–53517 (2013).
[Crossref]

J. Eur. Ceram. Soc. (1)

J. R. Gomah-Pettry, S. Saïd, P. Marchet, and J. P. Mercurio, “Sodium-bismuth titanate based lead-free ferroelectric materials,” J. Eur. Ceram. Soc. 24(6), 1165–1169 (2004).
[Crossref]

J. Mater. Res. (1)

Z. H. Du, T. S. Zhang, and J. Ma, “Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel derived PLZT films,” J. Mater. Res. 22(08), 2195–2203 (2007).
[Crossref]

J. Sol-Gel Sci. Technol. (1)

G. Lu, H. Dong, J. Chen, and J. Cheng, “Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method,” J. Sol-Gel Sci. Technol. 82(2), 530–535 (2017).
[Crossref]

JCT Res. (1)

O. V. Penkov, M. Khadem, W. S. Lim, and D. E. Kim, “A review of recent applications of atmospheric pressure plasma jets for materials processing,” JCT Res. 12(2), 225–235 (2015).
[Crossref]

Jpn. J. Appl. Phys. (2)

K. Hayashi, S. Okamoto, H. Takada, Y. Nagamori, H. Okada, T. Maeoka, and T. Yamamoto, “Fabrication of Transparent PLZT Ceramics with a High Transmittance and Their Application to Optical Light Shutter,” Jpn. J. Appl. Phys. 26(S2), 126 (1987).
[Crossref]

T. Nakagawa, J. Yamaguchi, T. Usuki, Y. Matsui, M. Okuyama, and Y. Hamakawa, “Ferroelectric Properties of RF Sputtered PLZT Thin Film,” Jpn. J. Appl. Phys. 18(5), 897–902 (1979).
[Crossref]

Mater. Chem. Phys. (1)

A. A. Jeyaseelan and S. Dutta, “Effect of ligand concentration on microstructure, ferroelectric and piezoelectric properties of PLZT film,” Mater. Chem. Phys. 162, 487–490 (2015).
[Crossref]

Mater. Lett. (1)

L. B. Kong and J. Ma, “Preparation and characterization of antiferroelectric PLZT 2/95/5 thin films via a sol-gel process,” Mater. Lett. 56(1-2), 30–37 (2002).
[Crossref]

Mater. Res. Bull. (1)

B. Ma, S. Tong, M. Narayanan, S. Liu, S. Chao, and U. Balachandran, “Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils,” Mater. Res. Bull. 46(7), 1124–1129 (2011).
[Crossref]

Phys. Thin Films (1)

M. A. Lieberman and R. A. Gottscho, “Design of High-Density Plasma Sources for Materials Processing,” Phys. Thin Films 18, 1–119 (1994).
[Crossref]

Plasmonics (1)

Z. Qi, G. Hu, B. Yun, R. Zhang, and Y. Cui, “Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti)O3 -Au Structure,” Plasmonics 11(1), 297–306 (2016).
[Crossref]

Prog. Mater. Sci. (1)

X. Hao, J. Zhai, B. K. Ling, and Z. Xu, “A comprehensive review on the progress of lead zirconate-based antiferroelectric materials,” Prog. Mater. Sci. 63(8), 1–57 (2014).
[Crossref]

Pure Appl. Chem. (1)

C. Moreau, J. F. Bisson, R. S. Lima, and B. R. Marple, “Diagnostics for advanced materials processing by plasma spraying,” Pure Appl. Chem. 77(2), 443–462 (2005).
[Crossref]

Scr. Mater. (1)

J. Gao, Y. Liu, Y. Wang, D. Wang, L. Zhong, and X. Ren, “High temperature-stability of (Pb0.9La0.1)(Zr0.65Ti0.35)O3 ceramic for energy-storage applications at finite electric field strength,” Scr. Mater. 137, 114–118 (2017).
[Crossref]

Thin Solid Films (3)

R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, “PZT (65/35) and PLZT (8/65/35) thin films by sol-gel process: a comparative study on the structural, microstructural and electrical properties,” Thin Solid Films 443(1-2), 14–22 (2003).
[Crossref]

R. Thielsch, K. Kaemmer, B. Holzapfel, and L. Schultz, “Structure-related optical properties of laser-deposited BaxSr1− xTiO3 thin films grown on MgO (001) substrates,” Thin Solid Films 301(1-2), 203–210 (1997).
[Crossref]

H. Y. Tian, W. G. Luo, A. L. Ding, J. Choi, C. Lee, and K. No, “Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique,” Thin Solid Films 408(1-2), 200–205 (2002).
[Crossref]

Usp. Fiz. Nauk (1)

V. M. Fridkin, “The Anomalous Photovoltaic Effect in Ferroelectrics,” Usp. Fiz. Nauk 126(12), 657–671 (1978).
[Crossref]

Other (2)

J. F. Roeder, S. M. Bilodeau, P. C. Van Buskirk, V. H. Ozguz, J. Ma, and S. H. B. T. Lee, “Liquid delivery CVD of PLZT thick films for electro-optic applications,” in proceedings of IEEE International Symposium on Applications of Ferroelectrics, (IEEE, 2002), pp. 687–690.

A. H. Jiang, Y. K. Zou, Q. Chen, K. K. Li, R. Zhang, Y. Wang, H. Ming, and Z. Q. Zheng, “Transparent electro-optic ceramics and devices,” in Proceedings of Optoelectronic Devices and Integration (Optoelectronic Devices and Integration, 2005), pp. 380–394.

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Figures (11)

Fig. 1.
Fig. 1. XRD patterns of PLZT films by (a) conventional annealing at 600, 650, 700 °C, plasma annealing at 650 °C and (b) plasma annealing at 650 °C with different La contents.
Fig. 2.
Fig. 2. The polarizing microscope images of PLZT (9/65/35) thin films by (a) conventional annealing at 650 °C and (b) plasma annealing at 650 °C.
Fig. 3.
Fig. 3. The SEM images of PLZT (9/65/35) thin films by (a) conventional annealing at 650 °C and (b) plasma annealing at 650 °C.
Fig. 4.
Fig. 4. The transmittance and polarization-electric field hysteresis loops of PLZT (9/65/35) thin films by conventional and plasma annealing at 650 °C.
Fig. 5.
Fig. 5. The polarization-electric field hysteresis loops of PLZT (x/65/35) thin films by plasma annealing at 650 °C.
Fig. 6.
Fig. 6. The transmittance of PLZT (x/65/35) thin films by plasma annealing at 650 °C.
Fig. 7.
Fig. 7. The optical properties (a) refractive index, (b) extinction coefficient and (c) absorption coefficcient of PLZT (x/65/35) films.
Fig. 8.
Fig. 8. The energy gap derivation of PLZT (x/65/35) films prepared by plasma annealing.
Fig. 9.
Fig. 9. The schematic structure of PLZT (x/65/35) optical device.
Fig. 10.
Fig. 10. The optical path in the insertion losses of the PLZT optical devices.
Fig. 11.
Fig. 11. The insertion loss of PLZT (x/65/35) optical device.

Equations (2)

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α=4πk/4πkλλ
(αhν)2=B(hνEg)

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