Abstract

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
    [Crossref]
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    [Crossref]
  3. A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
    [Crossref]
  4. D. Pasquariello and K. Hjort, “Plasma-assisted InP-to-Si low temperature wafer bonding,” IEEE J. Sel. Top. Quantum Electron. 8(1), 118–131 (2002).
    [Crossref]
  5. S. Lourdudoss, “Heteroepitaxy and selective area heteroepitaxy for silicon photonics,” Curr. Opin. Solid State Mater. Sci. 16(2), 91–99 (2012).
    [Crossref]
  6. Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
    [Crossref] [PubMed]
  7. S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
    [Crossref]
  8. Q. Li and K. M. Lau, “Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics,” Prog. Cryst. Growth Charact. Mater. 63(4), 105–120 (2017).
    [Crossref]
  9. C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
    [Crossref]
  10. Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
    [Crossref]
  11. J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
    [Crossref]
  12. S. Lourdudoss and O. Kjebon, “Hydride vapor phase epitaxy revisited,” IEEE J. Sel. Top. Quantum Electron. 3(3), 749–767 (1997).
    [Crossref]
  13. Y. T. Sun, G. Omanakuttan, and S. Lourdudoss, “An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth,” Appl. Phys. Lett. 106(21), 213504 (2015).
    [Crossref]
  14. M. Yamaguchi, A. Yamamoto, and Y. Itoh, “Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates,” J. Appl. Phys. 59(5), 1751–1753 (1986).
    [Crossref]
  15. M. Yamaguchi, “Fundamentals and R&D status of III-V cmpounds solar cells and materials,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 12(6), 489–499 (2015).
    [Crossref]
  16. W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
    [Crossref]
  17. B. G. Yacobi and D. B. Holt, “Cathodoluminescence scanning electron microscopy of semiconductors,” J. Appl. Phys. 59(4), R1–R24 (1986).
    [Crossref]
  18. L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
    [Crossref] [PubMed]
  19. T. Kamijoh, H. Takano, and M. Sakuta, “Heat treatment of semi-insulating InP:Fe with phosphosilicate glass encapsulation,” J. Appl. Phys. 55(10), 3756–3759 (1984).
    [Crossref]
  20. C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
    [Crossref]
  21. T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
    [Crossref]
  22. R. H. Williams, “Surface defect effects on Schottky barriers,” J. Vac. Sci. Technol. 18(3), 929–936 (1981).
    [Crossref]
  23. R. A. Street and R. H. Williams, “The luminescence of defects introduced by mechanical damage of InP,” J. Appl. Phys. 52(1), 402–406 (1981).
    [Crossref]
  24. H. Temkin, B. V. Dutt, and W. A. Bonner, “Photoluminescence study of native defects in InP,” Appl. Phys. Lett. 38(6), 431–433 (1981).
    [Crossref]
  25. H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, “Deep radiative levels in InP,” J. Appl. Phys. 53(11), 7526–7533 (1982).
    [Crossref]
  26. R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
    [Crossref]
  27. A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
    [Crossref]
  28. D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
    [Crossref]
  29. J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy,” J. Cryst. Growth 125(1–2), 329–335 (1992).
    [Crossref]
  30. R. K. Ahrenkiel, “Measurement of minority-carrier lifetime by time-resolved photoluminescence,” Solid-State Electron. 35(3), 239–250 (1992).
    [Crossref]
  31. W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
    [Crossref]
  32. Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
    [Crossref]
  33. K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
    [Crossref]

2017 (1)

Q. Li and K. M. Lau, “Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics,” Prog. Cryst. Growth Charact. Mater. 63(4), 105–120 (2017).
[Crossref]

2016 (2)

J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
[Crossref]

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

2015 (6)

A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
[Crossref]

Y. T. Sun, G. Omanakuttan, and S. Lourdudoss, “An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth,” Appl. Phys. Lett. 106(21), 213504 (2015).
[Crossref]

M. Yamaguchi, “Fundamentals and R&D status of III-V cmpounds solar cells and materials,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 12(6), 489–499 (2015).
[Crossref]

W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
[Crossref] [PubMed]

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

2014 (2)

Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
[Crossref]

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

2013 (2)

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
[Crossref]

2012 (1)

S. Lourdudoss, “Heteroepitaxy and selective area heteroepitaxy for silicon photonics,” Curr. Opin. Solid State Mater. Sci. 16(2), 91–99 (2012).
[Crossref]

2011 (1)

W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
[Crossref]

2010 (1)

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

2002 (1)

D. Pasquariello and K. Hjort, “Plasma-assisted InP-to-Si low temperature wafer bonding,” IEEE J. Sel. Top. Quantum Electron. 8(1), 118–131 (2002).
[Crossref]

1999 (1)

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

1997 (1)

S. Lourdudoss and O. Kjebon, “Hydride vapor phase epitaxy revisited,” IEEE J. Sel. Top. Quantum Electron. 3(3), 749–767 (1997).
[Crossref]

1993 (1)

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

1992 (2)

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy,” J. Cryst. Growth 125(1–2), 329–335 (1992).
[Crossref]

R. K. Ahrenkiel, “Measurement of minority-carrier lifetime by time-resolved photoluminescence,” Solid-State Electron. 35(3), 239–250 (1992).
[Crossref]

1991 (1)

L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
[Crossref] [PubMed]

1990 (1)

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

1989 (1)

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

1988 (1)

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
[Crossref]

1986 (2)

B. G. Yacobi and D. B. Holt, “Cathodoluminescence scanning electron microscopy of semiconductors,” J. Appl. Phys. 59(4), R1–R24 (1986).
[Crossref]

M. Yamaguchi, A. Yamamoto, and Y. Itoh, “Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates,” J. Appl. Phys. 59(5), 1751–1753 (1986).
[Crossref]

1984 (1)

T. Kamijoh, H. Takano, and M. Sakuta, “Heat treatment of semi-insulating InP:Fe with phosphosilicate glass encapsulation,” J. Appl. Phys. 55(10), 3756–3759 (1984).
[Crossref]

1982 (1)

H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, “Deep radiative levels in InP,” J. Appl. Phys. 53(11), 7526–7533 (1982).
[Crossref]

1981 (3)

R. H. Williams, “Surface defect effects on Schottky barriers,” J. Vac. Sci. Technol. 18(3), 929–936 (1981).
[Crossref]

R. A. Street and R. H. Williams, “The luminescence of defects introduced by mechanical damage of InP,” J. Appl. Phys. 52(1), 402–406 (1981).
[Crossref]

H. Temkin, B. V. Dutt, and W. A. Bonner, “Photoluminescence study of native defects in InP,” Appl. Phys. Lett. 38(6), 431–433 (1981).
[Crossref]

Adomi, K.

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Ahrenkiel, R. K.

R. K. Ahrenkiel, “Measurement of minority-carrier lifetime by time-resolved photoluminescence,” Solid-State Electron. 35(3), 239–250 (1992).
[Crossref]

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
[Crossref]

Al-Jassim, M. M.

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
[Crossref]

Allende Motz, A. M.

A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
[Crossref]

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Ayers, J. E.

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy,” J. Cryst. Growth 125(1–2), 329–335 (1992).
[Crossref]

Bender, H.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Bhat, R.

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

Bonner, W. A.

H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, “Deep radiative levels in InP,” J. Appl. Phys. 53(11), 7526–7533 (1982).
[Crossref]

H. Temkin, B. V. Dutt, and W. A. Bonner, “Photoluminescence study of native defects in InP,” Appl. Phys. Lett. 38(6), 431–433 (1981).
[Crossref]

Bowers, J.

Carlin, J. F.

L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
[Crossref] [PubMed]

Caymax, M.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Chirovsky, L. M. F.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Choi, C.

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Chua, C.

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

Colegrove, E.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Collaert, N.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Corzine, S.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Cunningham, J. E.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

D’Asaro, L. A.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Deal, W. R.

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C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
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W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
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R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
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Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
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C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
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A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
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Joyner, C.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
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Julian, N.

Junesand, C.

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
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W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
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D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
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Kanke, T.

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
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Kataria, H.

W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
[Crossref]

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
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R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Keramidas, V. G.

H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, “Deep radiative levels in InP,” J. Appl. Phys. 53(11), 7526–7533 (1982).
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Kish, F.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
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K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
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S. Lourdudoss and O. Kjebon, “Hydride vapor phase epitaxy revisited,” IEEE J. Sel. Top. Quantum Electron. 3(3), 749–767 (1997).
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Krishnamoorthy, A. V.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Kuciauskas, D.

A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
[Crossref]

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
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Lai, R.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Lange, M.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Lau, K. M.

Q. Li and K. M. Lau, “Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics,” Prog. Cryst. Growth Charact. Mater. 63(4), 105–120 (2017).
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Lee, J.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Leibengath, R. E.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Leong, K.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Levi, D. H.

A. Kanevce, D. Kuciauskas, D. H. Levi, A. M. Allende Motz, and S. W. Johnston, “Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors,” J. Appl. Phys. 118(4), 045709 (2015).
[Crossref]

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Li, J. V.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Li, Q.

Q. Li and K. M. Lau, “Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics,” Prog. Cryst. Growth Charact. Mater. 63(4), 105–120 (2017).
[Crossref]

Lin, C. H.

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

Liu, P.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Lo, I.

W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
[Crossref]

Lo, Y. H.

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

Lopata, J.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Lourdudoss, S.

Y. T. Sun, G. Omanakuttan, and S. Lourdudoss, “An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth,” Appl. Phys. Lett. 106(21), 213504 (2015).
[Crossref]

W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
[Crossref]

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
[Crossref]

S. Lourdudoss, “Heteroepitaxy and selective area heteroepitaxy for silicon photonics,” Curr. Opin. Solid State Mater. Sci. 16(2), 91–99 (2012).
[Crossref]

W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
[Crossref]

S. Lourdudoss and O. Kjebon, “Hydride vapor phase epitaxy revisited,” IEEE J. Sel. Top. Quantum Electron. 3(3), 749–767 (1997).
[Crossref]

Matsumoto, K.

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

Mei, X.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Merckling, C.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Metaferia, W.

W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
[Crossref]

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
[Crossref]

W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
[Crossref]

Metzger, W. K.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Michel, J.

Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
[Crossref] [PubMed]

Missey, M.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Morkoc, H.

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Moseley, J.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Moussa, A.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Moutinho, H.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Murray, J. J.

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

Murthy, S.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Muthiah, R.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Nagarajan, R.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Nishiyama, T.

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

Nozaki, S.

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

Omanakuttan, G.

Y. T. Sun, G. Omanakuttan, and S. Lourdudoss, “An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth,” Appl. Phys. Lett. 106(21), 213504 (2015).
[Crossref]

Onuki, Y.

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

Otsuka, N.

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Padilla, J.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Pasquariello, D.

D. Pasquariello and K. Hjort, “Plasma-assisted InP-to-Si low temperature wafer bonding,” IEEE J. Sel. Top. Quantum Electron. 8(1), 118–131 (2002).
[Crossref]

Pavesi, L.

L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
[Crossref] [PubMed]

Piazza, F.

L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
[Crossref] [PubMed]

Pleumeekers, J.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Pozina, G.

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
[Crossref]

W. Metaferia, C. Junesand, M. H. Gau, I. Lo, G. Pozina, L. Hultman, and S. Lourdudoss, “Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon,” J. Cryst. Growth 332(1), 27–33 (2011).
[Crossref]

Ptak, A. J.

J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
[Crossref]

Richard, O.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Rudra, A.

L. Pavesi, F. Piazza, A. Rudra, J. F. Carlin, and M. Ilegems, “Temperature dependence of the InP band gap from a photoluminescence study,” Phys. Rev. B Condens. Matter 44(16), 9052–9055 (1991).
[Crossref] [PubMed]

Sakuta, M.

T. Kamijoh, H. Takano, and M. Sakuta, “Heat treatment of semi-insulating InP:Fe with phosphosilicate glass encapsulation,” J. Appl. Phys. 55(10), 3756–3759 (1984).
[Crossref]

Salvatore, R. A.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Sarkozy, S.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Schneider, R.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Schowalter, L. J.

J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, “Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy,” J. Cryst. Growth 125(1–2), 329–335 (1992).
[Crossref]

Schulte, K. L.

J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
[Crossref]

Shimomura, K.

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

Simon, J.

J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
[Crossref]

Sivananthan, S.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Street, R. A.

R. A. Street and R. H. Williams, “The luminescence of defects introduced by mechanical damage of InP,” J. Appl. Phys. 52(1), 402–406 (1981).
[Crossref]

Sun, Y.

W. Metaferia, H. Kataria, Y. Sun, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Y. Sun, H. Kataria, W. Metaferia, and S. Lourdudoss, “Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth,” CrystEngComm 16(34), 7889–7893 (2014).
[Crossref]

C. Junesand, H. Kataria, W. Metaferia, N. Julian, Z. Wang, Y. Sun, J. Bowers, G. Pozina, L. Hultman, and S. Lourdudoss, “Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth,” Opt. Mater. Express 3(11), 1960–1973 (2013).
[Crossref]

Sun, Y. T.

Y. T. Sun, G. Omanakuttan, and S. Lourdudoss, “An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth,” Appl. Phys. Lett. 106(21), 213504 (2015).
[Crossref]

Takano, H.

T. Kamijoh, H. Takano, and M. Sakuta, “Heat treatment of semi-insulating InP:Fe with phosphosilicate glass encapsulation,” J. Appl. Phys. 55(10), 3756–3759 (1984).
[Crossref]

Temkin, H.

H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, “Deep radiative levels in InP,” J. Appl. Phys. 53(11), 7526–7533 (1982).
[Crossref]

H. Temkin, B. V. Dutt, and W. A. Bonner, “Photoluminescence study of native defects in InP,” Appl. Phys. Lett. 38(6), 431–433 (1981).
[Crossref]

Thean, A.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Tobin, S. P.

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
[Crossref]

Tseng, B. J.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Umeno, M.

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

Vandervorst, W.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Vanhaeren, D.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Vernon, S. M.

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, “Minority‐carrier properties of GaAs on silicon,” Appl. Phys. Lett. 53(3), 222–224 (1988).
[Crossref]

Waldron, N.

C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, and W. Vandervorst, “Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique,” J. Appl. Phys. 114(3), 033708 (2013).
[Crossref]

Walker, J. A.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Wang, Z.

Weber, E. R.

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

Welch, D.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Williams, R. H.

R. H. Williams, “Surface defect effects on Schottky barriers,” J. Vac. Sci. Technol. 18(3), 929–936 (1981).
[Crossref]

R. A. Street and R. H. Williams, “The luminescence of defects introduced by mechanical damage of InP,” J. Appl. Phys. 52(1), 402–406 (1981).
[Crossref]

Wu, A. T.

T. George, E. R. Weber, S. Nozaki, J. J. Murray, A. T. Wu, and M. Umeno, “Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs,” Appl. Phys. Lett. 55(20), 2090–2092 (1989).
[Crossref]

Wynn, J. D.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
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Yacobi, B. G.

B. G. Yacobi and D. B. Holt, “Cathodoluminescence scanning electron microscopy of semiconductors,” J. Appl. Phys. 59(4), R1–R24 (1986).
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Yamaguchi, M.

M. Yamaguchi, “Fundamentals and R&D status of III-V cmpounds solar cells and materials,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 12(6), 489–499 (2015).
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M. Yamaguchi, A. Yamamoto, and Y. Itoh, “Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates,” J. Appl. Phys. 59(5), 1751–1753 (1986).
[Crossref]

Yamamoto, A.

M. Yamaguchi, A. Yamamoto, and Y. Itoh, “Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates,” J. Appl. Phys. 59(5), 1751–1753 (1986).
[Crossref]

Yin, B.

Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
[Crossref] [PubMed]

Yoshida, W.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Young, D. L.

J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, “GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,” IEEE J. Photovolt. 6(1), 191–195 (2016).
[Crossref]

Zabel, H.

S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Zamora, A.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Zaunbrecher, K.

D. Kuciauskas, S. Farrell, P. Dippo, J. Moseley, H. Moutinho, J. V. Li, A. M. Allende Motz, A. Kanevce, K. Zaunbrecher, T. A. Gessert, D. H. Levi, W. K. Metzger, E. Colegrove, and S. Sivananthan, “Charge-carrier transport and recombination in heteroepitaxial CdTe,” J. Appl. Phys. 116(12), 123108 (2014).
[Crossref]

Zhou, J.

X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W. R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett. 36(4), 327–329 (2015).
[Crossref]

Zhou, Z.

Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
[Crossref] [PubMed]

Ziari, M.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, M. Ziari, F. Kish, and D. Welch, “InP Photonic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 16(5), 1113–1125 (2010).
[Crossref]

Zydzik, C. J.

A. V. Krishnamoorthy, L. M. F. Chirovsky, W. S. Hobson, R. E. Leibengath, S. P. Hui, C. J. Zydzik, K. W. Goossen, J. D. Wynn, B. J. Tseng, J. Lopata, J. A. Walker, J. E. Cunningham, and L. A. D’Asaro, “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” IEEE Photonics Technol. Lett. 11(1), 128–130 (1999).
[Crossref]

Appl. Phys. Express (1)

K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, “Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate,” Appl. Phys. Express 9(6), 62701 (2016).
[Crossref]

Appl. Phys. Lett. (5)

H. Temkin, B. V. Dutt, and W. A. Bonner, “Photoluminescence study of native defects in InP,” Appl. Phys. Lett. 38(6), 431–433 (1981).
[Crossref]

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement,” Appl. Phys. Lett. 62(10), 1038–1040 (1993).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 (a)-(d) Process flow of InP-seed mesa fabrication for CELOG. (e) Schematic of the InP-seed mesa pattern on Si before CELOG. The thickness of InP-seed layer is 2 μm and the distance between the two adjacent circular rings, of diameter 30 μm, is 5µm. (f) Schematic of the CELOG InP/Si cross-section.
Fig. 2
Fig. 2 SEM images (a, c) and the corresponding panchromatic CL images (b, d) of CELOG InP /Si cross section. Voids can be seen next to the seed in SEM images (a & c). The PanCL images were taken at 80 K.
Fig. 3
Fig. 3 (a) CL spectra measured at different sites (S1-S4) in the CELOG InP/Si cross section indicated in the panCL image in the inset. (b) Monochromatic CL images at wavelengths 892 nm, 967 nm and 1120 nm extracted from the spectral image. The yellow line markings in the CL image are the approximate position of InP/Si interface.
Fig. 4
Fig. 4 Room temperature time resolved PL decay curves measured on the (110) plane of CELOG cross section vertically along (a) CELOG region (CELOG-scan) and (c) seed region (seed-scan). The measured points from where the TRPL were acquired are shown in the inset SEM image of CELOG InP/Si cross-section. The numbers in decay curves denote the distances of the measured points from the CELOG surface. Carrier life times extracted from the line scannings are shown in (b) and (d), respectively. The scanning lines are marked in the inset SEM image. The highest intensity and PL lifetimes are observed near the InP/Si interface of the CELOG region.
Fig. 5
Fig. 5 Time resolved PL decay curves of CELOG InP/Si and InP-seed/Si. CELOG top refers to the measurement on top (001) surface of 20 µm thick CELOG surface; CELOG CS-19µm and CELOG CS-2µm refer to the measurements on the (110) cross sectional surface at 19 µm and 2 µm from the top surface, respectively.
Fig. 6
Fig. 6 (a) Bright field TEM image showing the smooth interface between InP and Si in the CELOG region. No threading dislocations contrast is observed in the InP film. (b) Selected area electron diffraction pattern acquired at the film-substrate interfacial region. (c) HRTEM cross section of CELOG InP/Si interface. The yellow lines marked in the HRTEM are parallel to (110) atomic planes. By counting the number of (110) planes between the lines in both layers, one missing plane in the InP layer can be inferred.

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