Abstract

A self-powered ultraviolet (UV) photodetector (PD) based two-dimensional NiO nanostructure and GaN film was fabricated using a low-temperature aqueous method. The heterostructure exhibited a prominent performance for UV detection response with self-powered properties. The results showed the NiO nanosheet/GaN heterojunction structure can simultaneously enhance the surface area and promote the charge transport. Furthermore, it provides a facile route for the growth of a NiO nanosheet/GaN heterostructure for low cost UV detector applications at remarkably low temperatures.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
  2. K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
    [Crossref] [PubMed]
  3. M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
    [Crossref]
  4. Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Japn, J. Appl. Phys. 43(7), 4146–4169 (2004).
    [Crossref]
  5. J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
    [Crossref]
  6. L. V. Schalkwyk, W. E. Meyer, J. M. Nel, F. D. Auret, and P. N. M. Ngoepe, “Implementation of an AlGaN-based solar-blind UV four-quadrant detector,” Physica B 439, 93–96 (2014).
    [Crossref]
  7. D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
    [Crossref]
  8. D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
    [Crossref] [PubMed]
  9. X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
    [Crossref]
  10. D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
    [Crossref]
  11. M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
    [Crossref]
  12. P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
    [Crossref]
  13. X. Y. Guo, T. L. Williamson, and P. W. Bohn, “Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching,” Solid State Commun. 140(3–4), 159–162 (2006).
    [Crossref]
  14. N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
    [Crossref]
  15. Y. Liu, X. Zhang, J. Su, H. Li, Q. Zhang, and Y. Gao, “Ag nanoparticles@ZnO nanowire composite arrays: an absorption enhanced UV photodetector,” Opt. Express 22(24), 30148–30155 (2014).
    [Crossref] [PubMed]
  16. Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).
  17. Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
    [Crossref] [PubMed]
  18. J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
    [Crossref] [PubMed]
  19. X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
    [Crossref]
  20. B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
    [Crossref]
  21. S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
    [Crossref]
  22. J. Y. Chen, Y. C. Chen, C. M. Wei, and Y. F. Chen, “Magnetic field modulation of photonic bandgap on FeCo/NiO half-shell array,” Opt. Lett. 36(13), 2563–2565 (2011).
    [Crossref] [PubMed]
  23. X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
    [Crossref]
  24. A. A. Ahmed, M. Devarajan, and N. Afzal, “Fabrication and characterization of high performance MSM UV photodetector based on NiO film,” Sensor. Actuat. A-Phys 262(1), 78–86 (2017).
  25. N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
    [Crossref]
  26. L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
    [Crossref]
  27. Y. Xiang, N. Yu, J. Liu, and L. Cao, “Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection,” Physica E 102, 29–32 (2018).
    [Crossref]
  28. N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
    [Crossref]
  29. S. Huang, N. Yu, T. Wang, and J. Li, “Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,” Funct. Mate. Lett. 11(02), 1850045 (2018).
    [Crossref]
  30. M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
    [Crossref] [PubMed]
  31. H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang, and N. Yu, “Simple Fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties,” Opt. Mater. Express 8(4), 794 (2018).
    [Crossref]
  32. L. Li, Z. Lou, and G. Shen, “Hierarchical CdS nanowires based rigid and flexible photodetectors with ultrahigh sensitivity,” ACS Appl. Mater. Interfaces 7(42), 23507–23514 (2015).
    [Crossref] [PubMed]
  33. K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
    [Crossref]
  34. L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
    [Crossref]

2018 (11)

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
[Crossref]

Y. Xiang, N. Yu, J. Liu, and L. Cao, “Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection,” Physica E 102, 29–32 (2018).
[Crossref]

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
[Crossref]

S. Huang, N. Yu, T. Wang, and J. Li, “Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,” Funct. Mate. Lett. 11(02), 1850045 (2018).
[Crossref]

M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
[Crossref] [PubMed]

S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
[Crossref]

K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
[Crossref]

H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang, and N. Yu, “Simple Fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties,” Opt. Mater. Express 8(4), 794 (2018).
[Crossref]

2017 (4)

L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
[Crossref]

A. A. Ahmed, M. Devarajan, and N. Afzal, “Fabrication and characterization of high performance MSM UV photodetector based on NiO film,” Sensor. Actuat. A-Phys 262(1), 78–86 (2017).

B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
[Crossref]

D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
[Crossref] [PubMed]

2015 (3)

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
[Crossref]

L. Li, Z. Lou, and G. Shen, “Hierarchical CdS nanowires based rigid and flexible photodetectors with ultrahigh sensitivity,” ACS Appl. Mater. Interfaces 7(42), 23507–23514 (2015).
[Crossref] [PubMed]

2014 (3)

Y. Liu, X. Zhang, J. Su, H. Li, Q. Zhang, and Y. Gao, “Ag nanoparticles@ZnO nanowire composite arrays: an absorption enhanced UV photodetector,” Opt. Express 22(24), 30148–30155 (2014).
[Crossref] [PubMed]

J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
[Crossref] [PubMed]

L. V. Schalkwyk, W. E. Meyer, J. M. Nel, F. D. Auret, and P. N. M. Ngoepe, “Implementation of an AlGaN-based solar-blind UV four-quadrant detector,” Physica B 439, 93–96 (2014).
[Crossref]

2012 (2)

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
[Crossref]

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

2011 (3)

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

J. Y. Chen, Y. C. Chen, C. M. Wei, and Y. F. Chen, “Magnetic field modulation of photonic bandgap on FeCo/NiO half-shell array,” Opt. Lett. 36(13), 2563–2565 (2011).
[Crossref] [PubMed]

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

2010 (1)

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

2009 (2)

P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
[Crossref]

Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).

2008 (1)

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

2006 (1)

X. Y. Guo, T. L. Williamson, and P. W. Bohn, “Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching,” Solid State Commun. 140(3–4), 159–162 (2006).
[Crossref]

2004 (2)

Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Japn, J. Appl. Phys. 43(7), 4146–4169 (2004).
[Crossref]

M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
[Crossref]

2002 (1)

H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
[Crossref]

Afzal, N.

A. A. Ahmed, M. Devarajan, and N. Afzal, “Fabrication and characterization of high performance MSM UV photodetector based on NiO film,” Sensor. Actuat. A-Phys 262(1), 78–86 (2017).

Ahmed, A. A.

A. A. Ahmed, M. Devarajan, and N. Afzal, “Fabrication and characterization of high performance MSM UV photodetector based on NiO film,” Sensor. Actuat. A-Phys 262(1), 78–86 (2017).

Anand, K.

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

Anitha, S.

S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
[Crossref]

Ao, J.-P.

L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
[Crossref]

Aono, M.

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

Auret, F. D.

L. V. Schalkwyk, W. E. Meyer, J. M. Nel, F. D. Auret, and P. N. M. Ngoepe, “Implementation of an AlGaN-based solar-blind UV four-quadrant detector,” Physica B 439, 93–96 (2014).
[Crossref]

Baek, M.

B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
[Crossref]

Balamurugan, S.

S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
[Crossref]

Balu, A. R.

S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
[Crossref]

Barvat, A.

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

Bhattacharyya, B.

K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
[Crossref]

Bie, Y. Q.

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Bohn, P. W.

X. Y. Guo, T. L. Williamson, and P. W. Bohn, “Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching,” Solid State Commun. 140(3–4), 159–162 (2006).
[Crossref]

Calvani, P.

P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
[Crossref]

Cao, L.

Y. Xiang, N. Yu, J. Liu, and L. Cao, “Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection,” Physica E 102, 29–32 (2018).
[Crossref]

Carta, S.

P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
[Crossref]

Chen, C.

X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
[Crossref]

Chen, J. Y.

Chen, Y.

H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang, and N. Yu, “Simple Fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties,” Opt. Mater. Express 8(4), 794 (2018).
[Crossref]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

Chen, Y. C.

Chen, Y. F.

Cheng, C.

Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).

Chiou, Y. Z.

Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Japn, J. Appl. Phys. 43(7), 4146–4169 (2004).
[Crossref]

Cho, Y. H.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Choursia, B.

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

Cingolani, R.

M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
[Crossref]

Cong, Y.

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
[Crossref]

Conte, G.

P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
[Crossref]

Dai, L.

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

De Vittorio, M.

M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
[Crossref]

Devarajan, M.

A. A. Ahmed, M. Devarajan, and N. Afzal, “Fabrication and characterization of high performance MSM UV photodetector based on NiO film,” Sensor. Actuat. A-Phys 262(1), 78–86 (2017).

Dong, B.

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
[Crossref]

Dong, M.

M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
[Crossref] [PubMed]

Dong, X.

Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).

Dukarov, S. V.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Frassanito, M. C.

M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
[Crossref]

Fu, T.

Fu, X. W.

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Gao, J. S.

Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).

Gao, X.

Gao, Y.

Girolami, M.

P. Calvani, M. Girolami, S. Carta, M. C. Rossi, and G. Conte, “Optoelectronic performance of GaN-based UV photodetectors,” Nucl. Instrum. Meth. A. 610(1), 311–313 (2009).
[Crossref]

Gour, K. S.

K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
[Crossref]

Guo, C. L.

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Guo, R.

M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
[Crossref]

Guo, X. Y.

X. Y. Guo, T. L. Williamson, and P. W. Bohn, “Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching,” Solid State Commun. 140(3–4), 159–162 (2006).
[Crossref]

Ha, J. H.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Han, J.

M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
[Crossref]

He, L.

L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
[Crossref]

Hu, B. Y.

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
[Crossref]

Hu, D.

X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
[Crossref]

Hu, J.

X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
[Crossref]

Hu, X.

J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
[Crossref] [PubMed]

Hu, Y.

M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
[Crossref]

Huang, S.

S. Huang, N. Yu, T. Wang, and J. Li, “Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,” Funct. Mate. Lett. 11(02), 1850045 (2018).
[Crossref]

Husale, S.

K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
[Crossref]

Jia, Y. P.

D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
[Crossref] [PubMed]

Jiang, H.

D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
[Crossref] [PubMed]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

Jiang, K.

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Jung, S.

B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
[Crossref]

Kang, S. M.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Khanna, S. P.

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

Khrypunov, G. S.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Khrypunova, A. L.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Kim, H.

B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
[Crossref]

Kim, H. S.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Kim, J. B.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Kim, S.

B. Parida, S. Kim, M. Oh, S. Jung, M. Baek, J. H. Ryou, and H. Kim, “Nanostructured-NiO/Si heterojunction photodetector,” Mater. Sci. Semicond. Process. 71(15), 29–34 (2017).
[Crossref]

Kim, Y. K.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Kind, H.

H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
[Crossref]

Kirichenko, M. V.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Klepikova, K. S.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Klochko, N. P.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Kopach, V. R.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Kumar, G.

N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
[Crossref]

Lee, J. H.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Lee, N. H.

J. H. Ha, S. M. Kang, S. H. Park, H. S. Kim, Y. H. Cho, J. H. Lee, N. H. Lee, J. B. Kim, and Y. K. Kim, “Annealing effect of the 6H-SiC semiconductor detector for alpha particles,” Radiat. Meas. 43(2–6), 1140–1143 (2008).
[Crossref]

Li, D.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

Li, D. B.

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
[Crossref] [PubMed]

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

Li, G. R.

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Li, H.

Li, J.

S. Huang, N. Yu, T. Wang, and J. Li, “Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,” Funct. Mate. Lett. 11(02), 1850045 (2018).
[Crossref]

Li, L.

L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
[Crossref]

L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
[Crossref]

L. Li, Z. Lou, and G. Shen, “Hierarchical CdS nanowires based rigid and flexible photodetectors with ultrahigh sensitivity,” ACS Appl. Mater. Interfaces 7(42), 23507–23514 (2015).
[Crossref] [PubMed]

Li, Q.

Li, X.

J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
[Crossref] [PubMed]

Li, Y.

H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang, and N. Yu, “Simple Fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties,” Opt. Mater. Express 8(4), 794 (2018).
[Crossref]

Y. Li, C. Cheng, X. Dong, and J. S. Gao, “Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes,” J. Semicond. 30(6), 38–41 (2009).

Li, Z.

M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
[Crossref] [PubMed]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

Li, Z.-M.

D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
[Crossref] [PubMed]

Liao, Z. M.

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Liu, J.

Y. Xiang, N. Yu, J. Liu, and L. Cao, “Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection,” Physica E 102, 29–32 (2018).
[Crossref]

Liu, K.

K. Liu, M. Sakurai, and M. Aono, “ZnO-based ultraviolet photodetectors,” Sensors (Basel) 10(9), 8604–8634 (2010).
[Crossref] [PubMed]

Liu, W.

J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
[Crossref] [PubMed]

Liu, Y.

L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
[Crossref]

L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
[Crossref]

Y. Liu, X. Zhang, J. Su, H. Li, Q. Zhang, and Y. Gao, “Ag nanoparticles@ZnO nanowire composite arrays: an absorption enhanced UV photodetector,” Opt. Express 22(24), 30148–30155 (2014).
[Crossref] [PubMed]

Liu, Z.

L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
[Crossref]

Lomascolo, M.

M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
[Crossref]

Lou, Z.

L. Li, Z. Lou, and G. Shen, “Hierarchical CdS nanowires based rigid and flexible photodetectors with ultrahigh sensitivity,” ACS Appl. Mater. Interfaces 7(42), 23507–23514 (2015).
[Crossref] [PubMed]

Lyubov, V. M.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

Messer, B.

H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
[Crossref]

Meyer, W. E.

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L. V. Schalkwyk, W. E. Meyer, J. M. Nel, F. D. Auret, and P. N. M. Ngoepe, “Implementation of an AlGaN-based solar-blind UV four-quadrant detector,” Physica B 439, 93–96 (2014).
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D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
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N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
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M. De Vittorio, B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, “High temperature characterization of GaN-based photodetectors,” Sens. Actuators A Phys. 113(3), 329–333 (2004).
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S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
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N. Prakash, G. Kumar, A. Barvat, K. Anand, B. Choursia, P. Pal, and S. P. Khanna, “Exploration of trap levels in GaN and Al0.2Ga0.8N layers by temperature-dependent photoconductivity measurement,” Materials Today: Proceedings. 5(1), 2132–2138 (2018).
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Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
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D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
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K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
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D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
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X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
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D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
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S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
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D. B. Li, X. J. Sun, Y. P. Jia, M. I. Stockman, H. P. Paudel, H. Song, H. Jiang, and Z.-M. Li, “Direct observation of localized surface plasmon field enhancement by Kelvin probe force microscopy,” Light Sci. Appl. 6(8), e17038 (2017).
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Suganya, M.

S. Anitha, M. Suganya, D. Prabha, J. Srivind, S. Balamurugan, and A. R. Balu, “Synthesis and characterization of NiO-CdO composite materials towards photoconductive and antibacterial applications,” Mater. Chem. Phys. 211(1), 88–96 (2018).
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Sun, X.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
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D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
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D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
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N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
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L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
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X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
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M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
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J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
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Weng, Z.

M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
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Xiong, H. X.

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Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
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K. S. Gour, B. Bhattacharyya, O. P. Singh, A. K. Yadav, S. Husale, and V. N. Singh, “Nanostructured Cu2ZnSnS4 (CZTS) thin film for self-powered broadband photodetection,” J. Alloys Compd. 735, 285–290 (2018).
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H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
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H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
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X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
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Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
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M. Wang, Y. Hu, J. Han, R. Guo, H. X. Xiong, and Y. D. Yin, “TiO2/NiO hybrid shells:P-n junction photocatalysts with enhanced activity under visible light,” J. Mater. Chem. A Mater. Energy Sustain. 3(41), 20727–20735 (2015).
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Yu, D. P.

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Yu, N.

Y. Xiang, N. Yu, J. Liu, and L. Cao, “Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection,” Physica E 102, 29–32 (2018).
[Crossref]

M. Dong, Y. Wang, Z. Li, Z. Weng, and N. Yu, “Simple Fabrication of Homogeneous ZnO Core/Shell Nanorod Arrays for Ultraviolet Photodetectors,” J. Nanosci. Nanotechnol. 18(8), 5686–5691 (2018).
[Crossref] [PubMed]

S. Huang, N. Yu, T. Wang, and J. Li, “Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,” Funct. Mate. Lett. 11(02), 1850045 (2018).
[Crossref]

H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang, and N. Yu, “Simple Fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties,” Opt. Mater. Express 8(4), 794 (2018).
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N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
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Yu, W. W.

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
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Zang, Y.

X. Wang, H. Pu, D. Hu, Y. Zang, J. Hu, Y. Yang, and C. Chen, “Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate,” Mater. Lett. 227(15), 315–317 (2018).
[Crossref]

Zhadan, D. O.

N. P. Klochko, V. R. Kopach, I. I. Tyukhov, D. O. Zhadan, K. S. Klepikova, G. S. Khrypunov, S. I. Petrushenko, V. M. Lyubov, M. V. Kirichenko, S. V. Dukarov, and A. L. Khrypunova, “Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell,” Sol. Energy 164(4), 149–159 (2018).
[Crossref]

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L. Li, Z. Liu, L. Wang, B. zhang, Y. Liu, and J.-P. Ao, “Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation,” Mater. Sci. Semicond. Process. 76(15), 61–64 (2018).
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Zhang, F.

Zhang, H. Z.

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Zhang, Q.

Zhang, X.

L. Li, W. Wang, L. He, X. Zhang, Z. Wu, and Y. Liu, “Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,” J. Alloys Compd. 728, 400–403 (2017).
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Y. Liu, X. Zhang, J. Su, H. Li, Q. Zhang, and Y. Gao, “Ag nanoparticles@ZnO nanowire composite arrays: an absorption enhanced UV photodetector,” Opt. Express 22(24), 30148–30155 (2014).
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Zhang, Y.

J. Qi, X. Hu, Z. Wang, X. Li, W. Liu, and Y. Zhang, “A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions,” Nanoscale 6(11), 6025–6029 (2014).
[Crossref] [PubMed]

Zhang, Y. Q.

N. S. Yu, B. Dong, W. W. Yu, B. Y. Hu, Y. Q. Zhang, and Y. Cong, “Investigations of ZnO nanostructures grown on patterned sapphire using different precursors in aqueous solutions,” Appl. Surf. Sci. 258(15), 5729–5732 (2012).
[Crossref]

Zhang, Z.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci Rep-UK. 5(1), 16819 (2015).
[Crossref]

Zhou, Y. B.

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
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ACS Appl. Mater. Interfaces (1)

L. Li, Z. Lou, and G. Shen, “Hierarchical CdS nanowires based rigid and flexible photodetectors with ultrahigh sensitivity,” ACS Appl. Mater. Interfaces 7(42), 23507–23514 (2015).
[Crossref] [PubMed]

Adv. Mater. (2)

H. Kind, H. Q. Yan, B. Messer, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. 14(2), 158–160 (2002).
[Crossref]

Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai, and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions,” Adv. Mater. 23(5), 649–653 (2011).
[Crossref] [PubMed]

Adv. Opt. Photonics (1)

D. B. Li, K. Jiang, X. J. Sun, and C. L. Guo, “AlGaN Photonics:Recent Advances in Materials and Ultraviolet Devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Appl. Phys. Lett. (2)

D. B. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, “Effect of asymmetric Schottky barrier on GaN-based metal- semiconductor-metal ultraviolet detector,” Appl. Phys. Lett. 99(26), 261102 (2011).
[Crossref]

X. W. Fu, Z. M. Liao, Y. B. Zhou, H. C. Wu, Y. Q. Bie, J. Xu, and D. P. Yu, “Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector,” Appl. Phys. Lett. 100(22), 223114 (2012).
[Crossref]

Appl. Surf. Sci. (1)

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Figures (9)

Fig. 1
Fig. 1 XRD pattern of NiO nanonsheets grown on n-GaN/sapphire substrate.
Fig. 2
Fig. 2 (a)(b) FE-SEM images of the as-grown NiO/GaN heterojunction samples with different magnifications. (c) The cross-sectional image.
Fig. 3
Fig. 3 Schematic diagram of the NiO/GaN device structure.
Fig. 4
Fig. 4 Current-voltage characteristics of NiO/GaN heterojunction under dark and illuminated conditions.
Fig. 5
Fig. 5 Photoresponse spectra of the NiO/GaN photoconductor at room temperature.
Fig. 6
Fig. 6 (a) The current-time curves of the photodetector under on/off switch illumination without bias voltages. (b) Single period cycle of the NiO/GaN photoconductor (c, d) Enlarged view of a single on/off cycle of the NiO/GaN photoconductor.
Fig. 7
Fig. 7 Photocurrent of NiO/GaN heterostructure device measured as a function of the excitation intensity without applied bias.
Fig. 8
Fig. 8 The derived photocurrent as a function of the excitation intensity without applied bias.
Fig. 9
Fig. 9 Band diagram for NiO/GaN heterojunction barrier.

Equations (1)

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S= IphId Id ×100