Abstract

Three different configurations of GaN are analysed to show robust and tunable light emitters from localised point defects induced in GaN crystal by a femtosecond laser (fs-laser). Localised irradiations of GaN are achieved using a fs-laser. The laser-induced damage threshold is found at a fluence of 130 ± 10 mJ/cm2. Raman spectroscopy allows for the characterization of irradiated GaN crystal while quasi-resonant photoluminescence mapping reveals a defect-related visible emission corresponding to the fs-laser irradiated area. From three different configurations of GaN, emission peaks vary from 620 to 680 nm-wavelengths for thin film, MBE intrinsically doped and Mg-doped NWs of GaN, respectively. The red emission in GaN is localized thanks to the new laser-induced fabrication and the engineering of the defect emission paves the way to further lighting applications.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
  22. H. Harima, “Properties of GaN and related compounds studied by means of Raman scattering,” J. Phys.: Cond. Matter 14, R967–R993 (2002).
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    [Crossref]
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  25. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
    [Crossref]
  26. R. Buividas, I. Aharonovich, G. Seniutinas, X. W. Wang, L. Rapp, A. V. Rode, T. Taniguchi, and S. Juodkazis, “Photoluminescence from voids created by femtosecond-laser pulses inside cubic-BN,” Opt. Lett. 40, 5711–5713 (2015).
    [Crossref] [PubMed]
  27. M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
    [Crossref]
  28. U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
    [Crossref]
  29. C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
    [Crossref]
  30. M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
    [Crossref]
  31. U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
    [Crossref]
  32. M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
    [Crossref]
  33. E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
    [Crossref]

2017 (4)

U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
[Crossref]

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

2016 (1)

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

2015 (3)

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
[Crossref]

R. Buividas, I. Aharonovich, G. Seniutinas, X. W. Wang, L. Rapp, A. V. Rode, T. Taniguchi, and S. Juodkazis, “Photoluminescence from voids created by femtosecond-laser pulses inside cubic-BN,” Opt. Lett. 40, 5711–5713 (2015).
[Crossref] [PubMed]

2014 (2)

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
[Crossref]

K. Sugioka and Y. Cheng, “Ultrafast lasers reliable tools for advanced materials processing,” Light. Sci. & Appl. 3, e149 (2014).
[Crossref]

2013 (2)

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow luminescence of gallium nitride generated by carbon defect complexes,” Phys. Rev. Lett. 110, 087404 (2013).
[Crossref] [PubMed]

S. Nakamura and M. R. Krames, “History of gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

2012 (2)

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

2011 (1)

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

2010 (3)

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

T. Paskova, D. A. Hanser, and K. R. Evans, “GaN substrates for III-nitride devices,” Proc. IEEE 98, 1324–1338 (2010).
[Crossref]

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

2009 (1)

S. Nakashima, K. Sugioka, and K. Midorikawa, “Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation,” Appl. Surf. Sci. 255, 9770–9774 (2009).
[Crossref]

2006 (2)

M. A. Reshchikov and H. Morkoç, “Luminescence from defects in GaN,” Phys. B: Cond. Matter 376–377, 428–431 (2006).
[Crossref]

M. G. Ganchenkova and R. M. Nieminen, “Nitrogen vacancies as major point defects in gallium nitride,” Phys. Rev. Lett. 96, 196402 (2006).
[Crossref] [PubMed]

2005 (1)

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

2003 (1)

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

2002 (3)

H. Harima, “Properties of GaN and related compounds studied by means of Raman scattering,” J. Phys.: Cond. Matter 14, R967–R993 (2002).

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

2001 (1)

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

1999 (2)

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

1998 (1)

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

1997 (1)

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

1996 (1)

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Ager, J. W.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Aharonovich, I.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

R. Buividas, I. Aharonovich, G. Seniutinas, X. W. Wang, L. Rapp, A. V. Rode, T. Taniguchi, and S. Juodkazis, “Photoluminescence from voids created by femtosecond-laser pulses inside cubic-BN,” Opt. Lett. 40, 5711–5713 (2015).
[Crossref] [PubMed]

Akasaki, I.

C. Wetzel and I. Akasaki, “Raman and IR studies of InN,” Prop. Process. Applications Gallium Nitride Relat. Semicond. INSPEC, Lond.1999, 121–122.

Alkauskas, A.

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
[Crossref]

Ambacher, O.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Anicet, M. A.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Bayerl, M. W.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Berhane, A. M.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Berweger, S.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Birowosuto, M. D.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
[Crossref]

Bodrog, Z.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Booth, M. J.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Bozdog, C.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Braga, G. C. B.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
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Brandt, M. S.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Bremser, M. D.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
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Buividas, R.

Carlos, W. E.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
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Chen, Y.-C.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
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Cheng, Y.

K. Sugioka and Y. Cheng, “Ultrafast lasers reliable tools for advanced materials processing,” Light. Sci. & Appl. 3, e149 (2014).
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S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
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U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
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U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
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Danang Birowosuto, M.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
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Darma, Y.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Davis, R. F.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
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Davydov, V. Y.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
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Demchenko, D. O.

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow luminescence of gallium nitride generated by carbon defect complexes,” Phys. Rev. Lett. 110, 087404 (2013).
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DenBaars, S. P.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
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Diallo, I. C.

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow luminescence of gallium nitride generated by carbon defect complexes,” Phys. Rev. Lett. 110, 087404 (2013).
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Ding, Y. M.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
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Dolan, P. R.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
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Englund, D.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
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Evans, K. R.

T. Paskova, D. A. Hanser, and K. R. Evans, “GaN substrates for III-nitride devices,” Proc. IEEE 98, 1324–1338 (2010).
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Evarestov, R. A.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
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Fiedler, S.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
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Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
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Freitas, J. A.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
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Gali, A.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
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Galopin, E.

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
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E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
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M. G. Ganchenkova and R. M. Nieminen, “Nitrogen vacancies as major point defects in gallium nitride,” Phys. Rev. Lett. 96, 196402 (2006).
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Glas, F.

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
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Glaser, E. R.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Gogneau, N.

U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
[Crossref]

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
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Goncharuk, I. N.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Graul, J.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Green, B. L.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Grzegory, I.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Hanser, D. A.

T. Paskova, D. A. Hanser, and K. R. Evans, “GaN substrates for III-nitride devices,” Proc. IEEE 98, 1324–1338 (2010).
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Harima, H.

H. Harima, “Properties of GaN and related compounds studied by means of Raman scattering,” J. Phys.: Cond. Matter 14, R967–R993 (2002).

Härle, V.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Harmand, J. C.

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

He, L.

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

He, Y. P.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
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Helava, H.

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
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Henry, R. L.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
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Hirao, K.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
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Horii, T.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Hou, S.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Hu, X. D.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Huang, D.

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

Huang, P.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Inouye, H.

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

Ishmael, S. N.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Iskandar, F.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
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Janotti, A.

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
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Jeong, K. Y.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Jiang, X. H.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Johnson, S.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Jones, E.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Juodkazis, S.

Kamp, M.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Katayama, K.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
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Kaufmann, U.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Kazansky, P. G.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

Kisielowski, C.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Kitaev, Y. E.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Kiyama, M.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Knauer, S.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Koleske, D. D.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Kozodoy, P.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

Krames, M. R.

S. Nakamura and M. R. Krames, “History of gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

Krüger, J.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Kunzer, M.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Kuramochi, E.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

Largeau, L.

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

Liliental-Weber, Z.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Loh, K. P.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Lu, J.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Lyons, J. L.

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
[Crossref]

Maier, M.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Makarov, Y.

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
[Crossref]

Manz, Ch.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Mayer, M.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Midorikawa, K.

S. Nakashima, K. Sugioka, and K. Midorikawa, “Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation,” Appl. Surf. Sci. 255, 9770–9774 (2009).
[Crossref]

Mirgorodsky, A. P.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Mishra, U. K.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

Mitsuyu, T.

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

Miura, K.

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

Miyazaki, T.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Molnar, R. J.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Moore, W. J.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

Morkoç, H.

M. A. Reshchikov and H. Morkoç, “Luminescence from defects in GaN,” Phys. B: Cond. Matter 376–377, 428–431 (2006).
[Crossref]

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

Morkoç., H.

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

Morley, G. W.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Nakamura, S.

S. Nakamura and M. R. Krames, “History of gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

Nakamura, T.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Nakashima, S.

S. Nakashima, K. Sugioka, and K. Midorikawa, “Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation,” Appl. Surf. Sci. 255, 9770–9774 (2009).
[Crossref]

Neacsu, C. C.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Newton, M. E.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Nieminen, R. M.

M. G. Ganchenkova and R. M. Nieminen, “Nitrogen vacancies as major point defects in gallium nitride,” Phys. Rev. Lett. 96, 196402 (2006).
[Crossref] [PubMed]

Notomi, M.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

Obloh, H.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Ogi, T.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Okada, M.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Okuyama, K.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Olmon, R. L.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Palacios, T.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Paskova, T.

T. Paskova, D. A. Hanser, and K. R. Evans, “GaN substrates for III-nitride devices,” Proc. IEEE 98, 1324–1338 (2010).
[Crossref]

Patriarche, G.

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

Permatasari, F. A.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Porowski, S.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Przybylinska, H.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Qiu, J.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

Ramakrishnan, A.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Rapp, L.

Rarity, J. G.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Raschke, M. B.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Reshchikov, M. A.

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
[Crossref]

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow luminescence of gallium nitride generated by carbon defect complexes,” Phys. Rev. Lett. 110, 087404 (2013).
[Crossref] [PubMed]

M. A. Reshchikov and H. Morkoç, “Luminescence from defects in GaN,” Phys. B: Cond. Matter 376–377, 428–431 (2006).
[Crossref]

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

Rode, A. V.

Ropers, C.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Rubin, M.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Rusydi, A.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Ruvimov, S.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Saitoh, Y.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Saleem, U.

U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
[Crossref]

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Salter, P. S.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Santic, B.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

Saraf, L. V.

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Scholz, F.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Schröder, T.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Semchinova, O.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Seniutinas, G.

Shanabrook, B. V.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

Shi, J. J.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Shimotsuma, Y.

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

Shiomi, H.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Smirnov, A. N.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Smirnov, M. B.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Smith, J. M.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Stephen, C. J.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Stutzmann, M.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

Sugioka, K.

K. Sugioka and Y. Cheng, “Ultrafast lasers reliable tools for advanced materials processing,” Light. Sci. & Appl. 3, e149 (2014).
[Crossref]

S. Nakashima, K. Sugioka, and K. Midorikawa, “Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation,” Appl. Surf. Sci. 255, 9770–9774 (2009).
[Crossref]

Sumiyoshi, K.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Suski, T.

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Takiguchi, M.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

Taniguchi, T.

Taniyama, H.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

Tay, B. K.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Tay, R. Y.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Tchernycheva, M.

Teo, E. H. T.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Toth, M.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Travers, L.

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

Triviño, N. V.

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Ueno, M.

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Uffmann, D.

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

Umar, S.

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

Usikov, A.

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
[Crossref]

Van de Walle, C. G.

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
[Crossref]

Wang, H.

U. Saleem, M. D. Birowosuto, N. Gogneau, P. Coquet, M. Tchernycheva, and H. Wang, “Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition,” Opt. Mater. Express 7, 1995 (2017).
[Crossref]

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Wang, X. W.

Watkins, G. D.

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Weber, E. R.

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

Weng, L.

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Wetzel, C.

C. Wetzel and I. Akasaki, “Raman and IR studies of InN,” Prop. Process. Applications Gallium Nitride Relat. Semicond. INSPEC, Lond.1999, 121–122.

Wickenden, A. E.

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Yokoo, A.

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

Zafar Iqbal, M.

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

Zhang, M.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Zhao, M.

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Zhong, H. X.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Zong, H.

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

2D Mater. (1)

S. Hou, M. D. Birowosuto, S. Umar, M. A. Anicet, R. Y. Tay, P. Coquet, B. K. Tay, H. Wang, and E. H. T. Teo, “Localized emission from laser-irradiated defects in 2D hexagonal boron nitride,” 2D Mater. 5, 015010 (2017).
[Crossref]

ACS Nano (1)

P. Huang, H. Zong, J. J. Shi, M. Zhang, X. H. Jiang, H. X. Zhong, Y. M. Ding, Y. P. He, J. Lu, and X. D. Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect,” ACS Nano 9, 9276–9283 (2015).
[Crossref] [PubMed]

Adv. Mater. (1)

A. M. Berhane, K. Y. Jeong, Z. Bodrog, S. Fiedler, T. Schröder, N. V. Triviño, T. Palacios, A. Gali, M. Toth, D. Englund, and I. Aharonovich, “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride,” Adv. Mater. 29, 1605092 (2017).
[Crossref]

Adv. Opt. Mater. (1)

U. Saleem, F. A. Permatasari, F. Iskandar, T. Ogi, K. Okuyama, Y. Darma, M. Zhao, K. P. Loh, A. Rusydi, P. Coquet, M. D. Birowosuto, and H. Wang, “Surface Plasmon Enhanced Nitrogen-Doped Graphene Quantum Dot Emission by Single Bismuth Telluride Nanoplates,” Adv. Opt. Mater. 5, 1700176 (2017).
[Crossref]

Appl. Phys. Express (1)

Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, “Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,” Appl. Phys. Express 3, 081001 (2010).
[Crossref]

Appl. Phys. Lett. (2)

K. Miura, J. Qiu, H. Inouye, T. Mitsuyu, and K. Hirao, “Photowritten optical waveguides in various glasses with ultrashort pulse laser,” Appl. Phys. Lett. 71, 3329–3331 (1997).
[Crossref]

M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104, 032103 (2014).
[Crossref]

Appl. Surf. Sci. (1)

S. Nakashima, K. Sugioka, and K. Midorikawa, “Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation,” Appl. Surf. Sci. 255, 9770–9774 (2009).
[Crossref]

Crys. Growth Des. (1)

L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, and J. C. Harmand, “N-polar GaN nanowires seeded by Al droplets on Si(111),” Crys. Growth Des. 12, 2724–2729 (2012).
[Crossref]

J. Appl. Phys. (2)

M. Danang Birowosuto, A. Yokoo, H. Taniyama, E. Kuramochi, M. Takiguchi, and M. Notomi, “Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals,” J. Appl. Phys. 112, 113106 (2012).
[Crossref]

M. A. Reshchikov and H. Morkoç, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97, 061301 (2005).
[Crossref]

J. Phys.: Cond. Matter (1)

H. Harima, “Properties of GaN and related compounds studied by means of Raman scattering,” J. Phys.: Cond. Matter 14, R967–R993 (2002).

Light. Sci. & Appl. (1)

K. Sugioka and Y. Cheng, “Ultrafast lasers reliable tools for advanced materials processing,” Light. Sci. & Appl. 3, e149 (2014).
[Crossref]

MRS Proc. (1)

M. A. Reshchikov, M. Zafar Iqbal, D. Huang, L. He, and H. Morkoç., “Surface-related photoluminescence effects in GaN,” MRS Proc.,  743, L112 (2002).
[Crossref]

Nano Lett. (1)

C. C. Neacsu, S. Berweger, R. L. Olmon, L. V. Saraf, C. Ropers, and M. B. Raschke, “Near-field localization in plasmonic superfocusing: A nanoemitter on a tip,” Nano Lett. 10, 592–596 (2010).
[Crossref] [PubMed]

Nanotechnology (1)

E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J. C. Harmand, “Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy,” Nanotechnology 22, 245606 (2011).
[Crossref] [PubMed]

Nat. Photon. (1)

Y.-C. Chen, P. S. Salter, S. Knauer, L. Weng, A. C. Frangeskou, C. J. Stephen, S. N. Ishmael, P. R. Dolan, S. Johnson, B. L. Green, G. W. Morley, M. E. Newton, J. G. Rarity, M. J. Booth, and J. M. Smith, “Laser writing of coherent colour centres in diamond,” Nat. Photon. 11, 77–80 (2016).
[Crossref]

Opt. Lett. (1)

Opt. Mater. Express (1)

Phys. B: Cond. Matter (1)

M. A. Reshchikov and H. Morkoç, “Luminescence from defects in GaN,” Phys. B: Cond. Matter 376–377, 428–431 (2006).
[Crossref]

Phys. Rev. B (6)

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54, 17745–17753 (1996).
[Crossref]

V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899–12907 (1998).
[Crossref]

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B,  59, 5561–5567 (1999).
[Crossref]

M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, “Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN,” Phys. Rev. B,  63, 125203 (2001).
[Crossref]

E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition,” Phys. Rev. B,  65, 085312 (2002).
[Crossref]

C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, and R. L. Henry, “Optical detection of electron paramagnetic resonance in electron-irradiated GaN,” Phys. Rev. B,  59, 12479–12486 (1999).
[Crossref]

Phys. Rev. Lett. (3)

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow luminescence of gallium nitride generated by carbon defect complexes,” Phys. Rev. Lett. 110, 087404 (2013).
[Crossref] [PubMed]

M. G. Ganchenkova and R. M. Nieminen, “Nitrogen vacancies as major point defects in gallium nitride,” Phys. Rev. Lett. 96, 196402 (2006).
[Crossref] [PubMed]

Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses,” Phys. Rev. Lett. 91, 247405 (2003).
[Crossref] [PubMed]

Phys. Stat. Sol. (B) Basic Res. (1)

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle, “First-principles theory of acceptors in nitride semiconductors,” Phys. Stat. Sol. (B) Basic Res. 252, 900–908 (2015).
[Crossref]

Proc. IEEE (2)

S. Nakamura and M. R. Krames, “History of gallium-nitride-based light-emitting diodes for illumination,” Proc. IEEE 101, 2211–2220 (2013).
[Crossref]

T. Paskova, D. A. Hanser, and K. R. Evans, “GaN substrates for III-nitride devices,” Proc. IEEE 98, 1324–1338 (2010).
[Crossref]

Other (1)

C. Wetzel and I. Akasaki, “Raman and IR studies of InN,” Prop. Process. Applications Gallium Nitride Relat. Semicond. INSPEC, Lond.1999, 121–122.

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Figures (5)

Fig. 1
Fig. 1 Structures of laser-induced GaN films and nanowires. Scanning-electron-microscope (SEM) images of localised irradiations by femto-second pulsed laser at 800 nm of a) MOCVD-grown GaN thin film, b) MBE intrinsically doped GaN nanowires and c) MBE-grown Mg-doped GaN nanowires. and a magnification of irradiation ‘9’ is shown in d), e) and f), respectively.
Fig. 2
Fig. 2 SEM images of irradiated area ‘7’ (magnified) for a) MOCVD-grown GaN thin film, b) MBE intrinsically doped GaN nanowires and c) MBE-grown Mg-doped GaN nanowires. d) and e) are respectively the cross-section SEM images of b) and c) showing no penetration beyond the surface.
Fig. 3
Fig. 3 Comparative study on irradiation with 460 ± 30 mW laser power (label ‘9’) in films and nanowires. A mapping of the GaN E 2 H Raman peak and a PL mapping of defect related emission of a) MOCVD-grown GaN thin film, b) MBE intrinsically doped GaN nanowires and c) MBE-grown Mg-doped GaN nanowires. The Raman and PL mapping experiments were performed with a continuous wave laser under 532 nm excitation at 300 K. The Raman and PL spectra are shown in the inset, the star symbol identifies the normal region, the circle identifies the defect region. The intensities in the mapping are the integration of the spectra in the region between two red lines.
Fig. 4
Fig. 4 a) Raman spectroscopy and PL emission characteristics of laser-induced GaN films and nanowires. b) Comparative PL spectra of defect-related emission and c) lifetime decay curves of defect-related emission. The instrument response function is 0.39 ns. The time constants are obtained after deconvolution with the instrument response. The exponential decay fitting is shown with full line. The Raman spectroscopy has the same excitation source as that in Fig. 3. The PL spectra and decay curves were measured with 10 MHz pulsed laser under 355 nm excitation and at 300 K.
Fig. 5
Fig. 5 Raman and PL mapping of laser-induced GaN films and nanowires. Comparative study of femto-second laser irradiation showing an optical image, a mapping of the GaN E 2 H Raman mode and a PL mapping of defect-related emission of a) MOCVD-grown GaN thin film, b) MBE intrinsically doped GaN nanowires and c) MBE-grown Mg-doped GaN nanowires. The experiments were performed with a continuous wave laser under 532 nm excitation at 300 K.

Tables (2)

Tables Icon

Table 1 Pulse energy, fluence and intensity of irradiation for each fs-laser induced defects in various structures of GaN.

Tables Icon

Table 2 Phonon frequencies observed at 300 K for GaN thin film, Mg-doped and undoped nanowires [22,23]

Metrics