Abstract

The optical and structural properties of non-polar a-plane Al0.4Ga0.6N epi-layers were improved significantly with the assistance of a bicyclopentadienyl-magnesium (Cp2Mg) and ammonia (NH3) (BA) treatment. The defects-related emission was remarkably suppressed with the introduced BA treatment. Moreover, the crystalline quality could be improved significantly using a BA treatment at a relatively low-temperature (LT), whereas the anisotropy in crystalline quality could be suppressed remarkably using a BA treatment at a relatively high-temperature (HT). In fact, the full width at half maximum values in the X-ray rocking curves measured along c- and m-directions were found to be decreased by approximately 15.5% and 56.0%, respectively, with the introduction of both LT-BA and HT-BA treatments. Meanwhile, the root-mean-square value measured with an atomic force microscope was decreased from 7.1 to 3.3 nm due to the LT-BA and HT-BA treatments.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
    [Crossref]
  2. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
    [Crossref] [PubMed]
  3. J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
    [Crossref]
  4. V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
    [Crossref]
  5. J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
    [Crossref]
  6. C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112(3), 033104 (2012).
    [Crossref]
  7. C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
    [Crossref]
  8. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
    [Crossref]
  9. J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
    [Crossref]
  10. H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
    [Crossref]
  11. J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
    [Crossref]
  12. M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).
  13. P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
    [Crossref]
  14. P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
    [Crossref]
  15. A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
    [Crossref]
  16. J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
    [Crossref]
  17. M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
    [Crossref]
  18. P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
    [Crossref]
  19. R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

2018 (1)

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

2017 (2)

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

2016 (1)

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

2014 (2)

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

2013 (1)

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

2012 (1)

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112(3), 033104 (2012).
[Crossref]

2011 (1)

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

2009 (1)

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

2007 (1)

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

2006 (1)

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

2005 (3)

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

2003 (1)

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

2000 (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

1997 (1)

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

1972 (1)

V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
[Crossref]

Ambacher, O.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Araki, M.

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

Argüello, C.

V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
[Crossref]

Bardwell, J. A.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Bechstedt, F.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Bell, A.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Bellet-Amalric, E.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Bhattacharya, A.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Bleuse, J.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Brandt, O.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Cardona, M.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Chakraborty, A.

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Chen, C.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Chen, C. Q.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Chen, S.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

Cong, P.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Cui, Y.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

Dai, J.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Dai, Q.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

Daudin, B.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

DenBaars, S. P.

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Dong, P.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Fan, A.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

Fan, S.

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Fang, Y.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Feng, Z. C.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

Figge, S.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Founta, S.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Ganguli, T.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Gayral, B.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Geng, C.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Gokhale, M. R.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Grahn, H. T.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Hatui, N.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

He, C.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

He, J.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

Hiramatsu, K.

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

Hommel, D.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Hoshino, K.

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

Khan, M. A.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Kim, K. C.

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Laskar, M. R.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Leite, R.

V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
[Crossref]

Lemos, V.

V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
[Crossref]

Li, J.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Li, X.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Li, Y.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Lin, C.-H.

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

Liu, R.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Liu, Y.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Ma, B.

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

Mariette, H.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Mishra, U. K.

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Miyagawa, R.

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

Miyake, H.

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

Mochimizo, N.

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

Moisa, S.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Moisson, C.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Monemar, B.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Mukherjee, A.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Narukawa, M.

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

Paskov, P. P.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Paskova, T.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Ponce, F. A.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Qin, Z.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Rahman, A. A.

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Rol, F.

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

Rolfe, S.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Ruf, T.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Schifano, R.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Speck, J. S.

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Sproule, I.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Stutzmann, M.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Sun, L.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Tadatomo, K.

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

Tamaki, S.

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

Tang, H.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Tian, W.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Tian, Y.

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Wagner, J.-M.

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Waltereit, P.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Wan, Q.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Wang, C.-P.

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112(3), 033104 (2012).
[Crossref]

Wang, J.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Wang, N.

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

Wang, S.

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

Wang, Z.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Webb, J. B.

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

Wei, T.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Wu, F.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

Wu, Y.-R.

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112(3), 033104 (2012).
[Crossref]

Wu, Z.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Xu, J.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

Yamashita, Y.

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

Yan, J.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Yan, Q.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Yang, J. W.

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Zeng, J.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Zhang, J.

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Zhang, X.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

Zhang, Y.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Zhao, J.

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

Zhao, L.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

ACS Photonics (1)

J. Zhao, X. Zhang, J. He, S. Chen, Z. Wu, A. Fan, Q. Dai, Z. C. Feng, and Y. Cui, “High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate,” ACS Photonics 5(5), 1903–1906 (2018).
[Crossref]

Appl. Phys. Express (2)

J. Zhao, X. Zhang, Q. Dai, N. Wang, Z. Wu, S. Wang, and Y. Cui, “Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition,” Appl. Phys. Express 10(1), 011002 (2017).
[Crossref]

C.-H. Lin, S. Tamaki, Y. Yamashita, H. Miyake, and K. Hiramatsu, “Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates,” Appl. Phys. Express 9(8), 081001 (2016).
[Crossref]

Appl. Phys. Lett. (5)

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, “Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy,” Appl. Phys. Lett. 86(17), 171901 (2005).
[Crossref]

H. Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, and I. Sproule, “In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation,” Appl. Phys. Lett. 82(5), 736–738 (2003).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Defect reduction in nonpolar a-plane GaN films using in situ SiN[sub x] nanomask,” Appl. Phys. Lett. 89(4), 041903 (2006).
[Crossref]

R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, “Luminescence from stacking faults in gallium nitride,” Appl. Phys. Lett. 86, 021908 (2005).

Appl. Surf. Sci. (1)

J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. Dai, Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, “The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 307, 525–532 (2014).
[Crossref]

J. Alloys Compd. (1)

J. Zhao, X. Zhang, Z. Wu, Q. Dai, N. Wang, J. He, S. Chen, Z. C. Feng, and Y. Cui, “Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer,” J. Alloys Compd. 729, 992–996 (2017).
[Crossref]

J. Appl. Phys. (3)

M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya, “Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content,” J. Appl. Phys. 109, 013107 (2011).

C.-P. Wang and Y.-R. Wu, “Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode,” J. Appl. Phys. 112(3), 033104 (2012).
[Crossref]

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

J. Cryst. Growth (2)

M. Narukawa, R. Miyagawa, B. Ma, H. Miyake, and K. Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN,” J. Cryst. Growth 311(10), 2903–2905 (2009).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

Jpn. J. Appl. Phys. (1)

M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 46(2), 555–559 (2007).
[Crossref]

Nature (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Phys. Rev. B (1)

J. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J.-M. Wagner, and F. Bechstedt, “Raman spectra of isotopic GaN,” Phys. Rev. B 56(22), 14399–14406 (1997).
[Crossref]

Solid State Commun. (1)

V. Lemos, C. Argüello, and R. Leite, “Resonant Raman scattering of TO (A1), TO (E1) and E2 optical phonons in GaN,” Solid State Commun. 11(10), 1351–1353 (1972).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 Schematic layer structures of the nonpolar a-plane AlGaN epi-layer samples A1 (a), A2 (b), A3 (c), and A4 (d).
Fig. 2
Fig. 2 HR-XRD 2θ-ω scanning curve for sample A4 (a); the AlGaN-related XRCs for samples A1-A4 measured at φ = 0° (b) and φ = 90° (c), respectively.
Fig. 3
Fig. 3 2D view AFM images detected within an area of 5 × 5 µm2 for samples A1-A4.
Fig. 4
Fig. 4 The measured (black circle) and fitted (blue line) PL spectra that are consisted of a major NBE peak (red line) and a SDR emission peak (green line) appearing as a “shoulder” next to the major NBE peak of samples A1-A4. The inserted figures in Figs. 4(b) and 4(d) demonstrate the enlarged PL spectra near SDR emission peaks for samples A2 and A4, respectively.

Tables (1)

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Table 1 Summary of the FWHM and ACQ values for the a-plane AlGaN-related XRCs for samples A1-A4.

Equations (1)

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A CQ =( M FWHM C FWHM )/ C FWHM ×100%,

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