Abstract

We investigated the decomposition conditions of CdSe crystal with the aid of thermodynamics analysis. We chose the optimized growth parameters (1 MPa, 1250°C) based on the numerical simulation, and obtained single crystal boule with 28 mm in diameter and 70 mm in length. Preliminary tests showed that the crystal had fine homogeneity in composition (CdSe0.975), high infrared transmission (68-70%, 2.0-16 µm) and large laser induced damage threshold value (LIDT, 56 MW/cm2). This crystal may be a good candidate for the 8-12 µm mid-far nonlinear optical (NLO) material.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. S. Das, “Broadly tunable multi-output coherent source based on optical parametric oscillator,” Opt. Laser Technol. 71, 63–67 (2015).
    [Crossref]
  2. B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
    [Crossref]
  3. Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
    [Crossref]
  4. N. N. David, Nonlinear Optical Crystals: A Complete Survey (Springer Press, 2005), Chap. 8.
  5. J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
    [Crossref]
  6. T. H. Allik, S. Chandra, D. M. Rines, P. G. Schunemann, J. A. Hutchinson, and R. Utano, “Tunable 7 12-microm optical parametric oscillator using a Cr,Er:YSGG laser to pump CdSe and ZnGeP2 crystals,” Opt. Lett. 22(9), 597–599 (1997).
    [Crossref] [PubMed]
  7. T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
    [Crossref]
  8. M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
    [Crossref]
  9. A. Burger and M. Roth, “Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique,” J. Cryst. Growth 67(3), 507–512 (1984).
    [Crossref]
  10. N. N. Kolesnikov, R. B. James, N. S. Berzigiarova, and M. P. Kulakov, “HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals,” Proceedings of the Society for Photo-Instrumentation Engineers 4784, 93–104 (SPIE, 2002).
  11. B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
    [Crossref]
  12. R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
    [Crossref]
  13. R. C. Sharma and Y. A. Chang, “The Cd-Se (cadmium- selenium) system,” J. Phase Equi. 17(2), 140–145 (1996).
    [Crossref]
  14. P. Atkins and J. D. Paula, Atkins’ Physical Chemistry (Oxford University Press, 2006), Part 1.
  15. Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).
  16. S. Y. Tochitsky, V. O. Petukhov, V. A. Gorobets, V. V. Churakov, and V. N. Jakimovich, “Efficient continuous-wave frequency doubling of a tunable CO2 laser in AgGaSe2.,” Appl. Opt. 36(9), 1882–1888 (1997).
    [Crossref] [PubMed]

2017 (4)

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
[Crossref]

2015 (1)

S. Das, “Broadly tunable multi-output coherent source based on optical parametric oscillator,” Opt. Laser Technol. 71, 63–67 (2015).
[Crossref]

2012 (2)

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

2011 (1)

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

1997 (2)

1996 (1)

R. C. Sharma and Y. A. Chang, “The Cd-Se (cadmium- selenium) system,” J. Phase Equi. 17(2), 140–145 (1996).
[Crossref]

1995 (1)

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

1984 (1)

A. Burger and M. Roth, “Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique,” J. Cryst. Growth 67(3), 507–512 (1984).
[Crossref]

Allik, T. H.

Andreev, Y.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Atuchin, V.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Burger, A.

A. Burger and M. Roth, “Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique,” J. Cryst. Growth 67(3), 507–512 (1984).
[Crossref]

Carli, A. T.

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

Chandra, S.

Chang, Y. A.

R. C. Sharma and Y. A. Chang, “The Cd-Se (cadmium- selenium) system,” J. Phase Equi. 17(2), 140–145 (1996).
[Crossref]

Chen, B.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Chen, S. J.

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Chen, Y.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

Churakov, V. V.

Coluccelli, N.

Dai, T. Y.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

Das, S.

S. Das, “Broadly tunable multi-output coherent source based on optical parametric oscillator,” Opt. Laser Technol. 71, 63–67 (2015).
[Crossref]

Duan, X. M.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

Feng, Z. S.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Fernandez, T. T.

Frolov, M. P.

T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
[Crossref]

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Galzerano, G.

Gao, J. Y.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Gordienko, V. M.

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Gorobets, V. A.

Guo, J.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

He, Z.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Huang, C. B.

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Hutchinson, J. A.

Jakimovich, V. N.

Ju, Y. L.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Kang, Z. H.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Karasik, V. E.

Korostelin, Y. V.

T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
[Crossref]

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Kozlovsky, V. I.

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
[Crossref]

Lanskii, G.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Laporta, P.

Lazarev, V. A.

Leonov, S. O.

Li, G.

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Maddaloni, P.

Meng, P. B.

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Mokri, A. E.

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

Ndap, J. O.

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

Ni, Y. B.

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Petukhov, V. O.

Podmar’kov, Y. P.

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Podmarkov, Y. P.

Potemkin, F. V.

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Rines, D. M.

Roth, M.

A. Burger and M. Roth, “Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique,” J. Cryst. Growth 67(3), 507–512 (1984).
[Crossref]

Schunemann, P. G.

Shaiduko, A.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Sharma, R. C.

R. C. Sharma and Y. A. Chang, “The Cd-Se (cadmium- selenium) system,” J. Phase Equi. 17(2), 140–145 (1996).
[Crossref]

Skasyrsky, Y. K.

T. T. Fernandez, M. K. Tarabrin, Y. C. Wang, V. A. Lazarev, S. O. Leonov, V. E. Karasik, Y. V. Korostelin, M. P. Frolov, Y. P. Podmarkov, Y. K. Skasyrsky, V. I. Kozlovsky, C. Svelto, P. Maddaloni, N. Coluccelli, P. Laporta, and G. Galzerano, “Thermo-optical and lasing characteristics of Cr2+-doped CdSe single crystal as tunable coherent source in the mid-infrared,” Opt. Mater. Express 7(11), 3815–3825 (2017).
[Crossref]

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Svelto, C.

Tan, Z.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Tarabrin, M. K.

Tochitsky, S. Y.

Triboulet, R.

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

Utano, R.

Wang, Y. C.

Wang, Y. Z.

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Wu, H. X.

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Xie, J. J.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Yao, B. Q.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Yuan, J. H.

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

Zeng, B.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Zhang, C. L.

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Zhang, L. M.

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Zhao, S.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Zhu, G. L.

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

Zhu, S.

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

Zozime, A.

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

Appl. Opt. (1)

Appl. Phys B-Lasers. (1)

Z. H. Kang, J. Guo, Z. S. Feng, J. Y. Gao, J. J. Xie, L. M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulfur doped GaSe for mid-IR applications,” Appl. Phys B-Lasers. 108(3), 545–552 (2012).
[Crossref]

Chin. Phys. B (1)

B. Q. Yao, G. Li, G. L. Zhu, P. B. Meng, Y. L. Ju, and Y. Z. Wang, “Comparative investigation of long-wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators,” Chin. Phys. B 21(3), 034213 (2012).
[Crossref]

J. Cryst. Growth (2)

A. Burger and M. Roth, “Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique,” J. Cryst. Growth 67(3), 507–512 (1984).
[Crossref]

B. Zeng, S. Zhao, S. Zhu, Z. He, B. Chen, and Z. Tan, “Optimizing the growth procedures for CdSe crystal by thermal analysis techniques,” J. Cryst. Growth 316(1), 15–19 (2011).
[Crossref]

J. Phase Equi. (1)

R. C. Sharma and Y. A. Chang, “The Cd-Se (cadmium- selenium) system,” J. Phase Equi. 17(2), 140–145 (1996).
[Crossref]

J. Phys. IV (1)

R. Triboulet, J. O. Ndap, A. E. Mokri, A. T. Carli, and A. Zozime, “Solid state recrystallization of II–VI semiconductors:application to cadmium telluride, cadmium selenide and zinc selenide,” J. Phys. IV 05(C3), 141–149 (1995).
[Crossref]

J. Synthetic Crystals. (1)

Y. B. Ni, S. J. Chen, H. X. Wu, C. L. Zhang, and C. B. Huang, “Investigation and Study on a Polycrystalline Synthesis Method for high purity CdSe compound,” J. Synthetic Crystals. 46(7), 1203–1208 (2017).

Laser Phys. Lett. (1)

M. P. Frolov, V. M. Gordienko, Y. V. Korostelin, V. I. Kozlovsky, Y. P. Podmar’kov, F. V. Potemkin, and Y. K. Skasyrsky, “Fe2+-doped CdSe single crystal: growth, spectroscopic and laser properties, potential use as a 6 μm broadband amplifier,” Laser Phys. Lett. 14(2), 025001 (2017).
[Crossref]

Opt. Laser Technol. (2)

J. H. Yuan, Y. Chen, X. M. Duan, B. Q. Yao, T. Y. Dai, and Y. L. Ju, “CdSe optical parametric oscillator operating at 12.07 µm with 170 mW Output,” Opt. Laser Technol. 92, 1–4 (2017).
[Crossref]

S. Das, “Broadly tunable multi-output coherent source based on optical parametric oscillator,” Opt. Laser Technol. 71, 63–67 (2015).
[Crossref]

Opt. Lett. (1)

Opt. Mater. Express (1)

Other (3)

N. N. Kolesnikov, R. B. James, N. S. Berzigiarova, and M. P. Kulakov, “HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals,” Proceedings of the Society for Photo-Instrumentation Engineers 4784, 93–104 (SPIE, 2002).

N. N. David, Nonlinear Optical Crystals: A Complete Survey (Springer Press, 2005), Chap. 8.

P. Atkins and J. D. Paula, Atkins’ Physical Chemistry (Oxford University Press, 2006), Part 1.

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Figures (7)

Fig. 1
Fig. 1 The diagram of CdSe theoretical decomposition ratio varied with pressure P (inset, the decomposition ratio varied with the temperature T).
Fig. 2
Fig. 2 The photographs of (a) as synthesized CdSe polycrystalline with the weight of about 200 g, (b) as-grown CdSe boules with 28 mm in diameter and 70 mm in length, (c) roughly polished cutting wafers, and (d) some elements about 40mm in length and typical test samples (inset) S1: 4.5 × 6 × 2.5 mm3, polished face: (100); S2: 5.5 × 6 × 5.5 mm3, polished face: (002).
Fig. 3
Fig. 3 The schematic diagram of the experiment setup.
Fig. 4
Fig. 4 The as grown CdSe crystal’s (a) power XRD pattern, (b) (100) and (002) single crystal diffraction, and (c) corresponding rocking curves.
Fig. 5
Fig. 5 (a) SEM image of CdSe crystal and (b) the EDS of CdSe revealing its chemical composition of Cd: Se = 50.58: 49.42.
Fig. 6
Fig. 6 (a) The bulk transparency image under 920 nm infrared microscope; The transparency spectrum of CdSe samples S1 and S2 with thickness 2.5 and 5.5 mm respectively: (b) in the range of 700-2500 nm (inset: the magnified image of corresponding cutoff wavelength) and (c) in the range of 4000-480 cm−1; and (d) the optical absorption spectra in the 950-17000 nm by calculation.
Fig. 7
Fig. 7 The transparency spectrum of AgGaSe2 in the range of 700-20000 nm (inset: the corresponding optical absorption spectrum in the 800-17500 nm by calculation).

Tables (1)

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Table 1 The CdSe equilibrium composition varied with the pressure

Equations (7)

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CdSe(s,l)Cd(g)+ 1 2 S e 2 (g)
K x = x Cd x S e 2 0.5 x CdSe =( p Cd p ) ( p S e 2 p ) 0.5 = K p p B ν B
( ln K x p ) T = B υ B p
K x p K x p 0 = ( α α 0 ) 1.5 × ( 1+0.5 α 0 1+0.5α ) 0.5 ×( 1 α 0 1α )
lgP(bar)=( 11088/T )+7.009
ln K x p K x p 0 = B υ B ln p 0 p =1.5ln α α 0
ln K T ϑ K T 0 ϑ =- Δ r H m ϑ R ( 1 T 0 1 T )

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