Abstract

A specially designed InGaN/GaN superlattice (SL) interlayer was inserted between n-GaN and a multiple quantum well to enhance the performance of yellow light-emitting diodes (LEDs) grown on Si (111). The number of SL periods was determined to be the key to enhancing the external quantum efficiency and reducing forward voltage. Our results show that more SLs could suppress nonradiative recombination by eliminating micron-scale indium-rich clusters and could promote hole injection with increased V-pit size. However, too many SLs reduce the effective luminescence area and lead to many voids formed in the p-type layer. We demonstrate that 32 is the optimum number of SLs for yellow InGaN/GaN LEDs, obtaining a high light output power of 63 mW with a dominant wavelength of 568 nm, and a low forward voltage of 2.38 V at 200 mA (20 A/cm2).

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
  25. P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
    [Crossref]
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    [Crossref] [PubMed]
  29. Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
    [Crossref]
  30. M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
    [Crossref]
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  32. R. W. Martin, P. G. Middleton, and K. P. O’Donnell, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
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  33. H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
    [Crossref]
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    [Crossref]
  35. S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
    [Crossref] [PubMed]
  36. Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
    [Crossref]
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    [Crossref]
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    [Crossref]
  39. Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
    [Crossref]
  40. Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
    [Crossref]
  41. C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
    [Crossref]
  42. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
    [Crossref] [PubMed]
  43. J. Kim, Y. H. Cho, D. S. Ko, X. S. Li, J. Y. Won, E. Lee, S. H. Park, J. Y. Kim, and S. Kim, “Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells,” Opt. Express 22(S3), A857–A866 (2014).
    [Crossref] [PubMed]

2016 (3)

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
[Crossref]

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
[Crossref]

K. Lee, C. R. Lee, J. H. Lee, T. H. Chung, M. Y. Ryu, K. U. Jeong, J. Y. Leem, and J. S. Kim, “Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes,” Opt. Express 24(7), 7743–7751 (2016).
[Crossref] [PubMed]

2015 (5)

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118(19), 193102 (2015).
[Crossref]

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118(16), 164504 (2015).
[Crossref]

G. Wang, X. Tao, J. Liu, and F. Jiang, “Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures,” Semicond. Sci. Technol. 30(1), 15018–15023 (2015).
[Crossref]

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
[Crossref] [PubMed]

N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo, “Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes,” J. Appl. Phys. 117(2), 025708 (2015).
[Crossref]

2014 (6)

Y. Yang and Y. Zeng, “Enhanced performance of InGaN light-emitting diodes with InGaN/GaN superlattice and graded-composition InGaN/GaN superlattice interlayers,” Phys. Status Solidi 211(7), 1640–1644 (2014).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 628–631 (2014).
[Crossref]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
[Crossref]

J. Kim, Y. H. Cho, D. S. Ko, X. S. Li, J. Y. Won, E. Lee, S. H. Park, J. Y. Kim, and S. Kim, “Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells,” Opt. Express 22(S3), A857–A866 (2014).
[Crossref] [PubMed]

2013 (5)

C. Jia, T. Yu, H. Lu, C. Zhong, Y. Sun, Y. Tong, and G. Zhang, “Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs,” Opt. Express 21(7), 8444–8449 (2013).
[Crossref] [PubMed]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 1529–1532 (2013).
[Crossref]

H. Ryu and W. J. Choi, “Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes,” J. Appl. Phys. 114(17), 173101 (2013).
[Crossref]

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

2011 (2)

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

2010 (3)

S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
[Crossref]

T. A. Y. S. Ping-Chieh, “Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping,” Jpn. J. Appl. Phys. 49, 4D–7D (2010).

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” Journal of Physics D 43(35), 354002 (2010).
[Crossref]

2008 (2)

S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
[Crossref]

F. K. Yam and Z. Hassan, “InGaN: An overview of the growth kinetics, physical properties and emission mechanisms,” Superlattices Microstruct. 43(1), 1–23 (2008).
[Crossref]

2007 (2)

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
[Crossref]

2005 (1)

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
[Crossref] [PubMed]

2004 (2)

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
[Crossref]

T. C. Wen, S. J. Chang, C. T. Lee, and W. C. Lai, ““Nitride-based LEDs with modulation-doped Al 0.12 Ga 0.88 N-GaN superlattice structures,” IEEE T,” Electron Dev. 51, 1743–1746 (2004).
[Crossref]

2003 (1)

Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
[Crossref]

2002 (1)

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
[Crossref]

2000 (1)

Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
[Crossref]

1999 (2)

R. W. Martin, P. G. Middleton, and K. P. O’Donnell, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
[Crossref]

1998 (3)

S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
[Crossref] [PubMed]

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
[Crossref]

J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, “Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD,” J. Cryst. Growth 195(1-4), 252–257 (1998).
[Crossref]

1997 (1)

R. Singh, D. Doppalapudi, T. D. Moustakas, and L. T. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

Acar Berkman, E.

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
[Crossref]

Ade, G.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
[Crossref] [PubMed]

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P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
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Bazarevskiy, D. S.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Bedair, S. M.

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
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Bour, D. P.

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
[Crossref]

Brennan, S.

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
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Brunkov, P. N.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Chang, S. J.

T. C. Wen, S. J. Chang, C. T. Lee, and W. C. Lai, ““Nitride-based LEDs with modulation-doped Al 0.12 Ga 0.88 N-GaN superlattice structures,” IEEE T,” Electron Dev. 51, 1743–1746 (2004).
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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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Chen, H.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
[Crossref] [PubMed]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Chen, L. C.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Cheng, Y.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Cherkashin, N. A.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Cherniakov, A. E.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Chiu, C. H.

S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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Cho, H. K.

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
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Cho, Y.

Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
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Cho, Y. H.

Choi, W. J.

H. Ryu and W. J. Choi, “Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes,” J. Appl. Phys. 114(17), 173101 (2013).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Chung, T. H.

Chyi, J.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
[Crossref]

Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Dai, L.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, “Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD,” J. Cryst. Growth 195(1-4), 252–257 (1998).
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Deng, J.

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
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Deng, Z.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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Dierolf, V.

Ding, W.

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
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Doppalapudi, D.

R. Singh, D. Doppalapudi, T. D. Moustakas, and L. T. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
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Du, C.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

El-Masry, N. A.

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
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Emara, A. M.

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
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Fang, F.

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118(19), 193102 (2015).
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Feng, S.

Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Feng, Z.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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Fuhrmann, D.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
[Crossref] [PubMed]

Han, J.

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Hangleiter, A.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
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Hashimoto, R.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 628–631 (2014).
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S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
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R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 1529–1532 (2013).
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F. K. Yam and Z. Hassan, “InGaN: An overview of the growth kinetics, physical properties and emission mechanisms,” Superlattices Microstruct. 43(1), 1–23 (2008).
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A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
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Hitzel, F.

A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, “Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,” Phys. Rev. Lett. 95(12), 127402 (2005).
[Crossref] [PubMed]

Hou, X.

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
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Hsu, C.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Hwang, J.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 628–631 (2014).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 11, 1529–1532 (2013).
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Hwang, S. M.

S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
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Hytch, M. J.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” Journal of Physics D 43(35), 354002 (2010).
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Jeong, K. U.

Ji, Z.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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Jia, C.

Jia, H.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
[Crossref] [PubMed]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
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Jiang, F.

X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118(16), 164504 (2015).
[Crossref]

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118(19), 193102 (2015).
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G. Wang, X. Tao, J. Liu, and F. Jiang, “Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures,” Semicond. Sci. Technol. 30(1), 15018–15023 (2015).
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Jiang, Y.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
[Crossref] [PubMed]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Johnson, N. M.

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
[Crossref]

Jun, J.

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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Kang, J.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
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Kang, T. W.

Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
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Kashihara, H.

N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo, “Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes,” J. Appl. Phys. 117(2), 025708 (2015).
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Kim, C. S.

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
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Kim, E. H.

S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
[Crossref]

Kim, H. M.

Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
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Kim, J.

Kim, J. S.

Kim, J. Y.

J. Kim, Y. H. Cho, D. S. Ko, X. S. Li, J. Y. Won, E. Lee, S. H. Park, J. Y. Kim, and S. Kim, “Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells,” Opt. Express 22(S3), A857–A866 (2014).
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Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
[Crossref]

Kim, K. C.

S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
[Crossref]

Kim, S.

Kim, T. G.

S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
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Kobayashi, J. T.

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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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Lee, C. T.

T. C. Wen, S. J. Chang, C. T. Lee, and W. C. Lai, ““Nitride-based LEDs with modulation-doped Al 0.12 Ga 0.88 N-GaN superlattice structures,” IEEE T,” Electron Dev. 51, 1743–1746 (2004).
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C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
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J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
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Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Liu, J.

G. Wang, X. Tao, J. Liu, and F. Jiang, “Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures,” Semicond. Sci. Technol. 30(1), 15018–15023 (2015).
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N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
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Liu, S.

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
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Liu, W.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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S. Zhou and X. Liu, “Effect of V‐pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN‐based green light‐emitting diodes,” Phys. Status Solidi, 10.1002/pssa.201600782 (2016).

Liu, Z.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
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Lu, H.

Lu, L.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Lu, T.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
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Lu, T. C.

S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Ma, P.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
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Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
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R. W. Martin, P. G. Middleton, and K. P. O’Donnell, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
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L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(14), 1730–1732 (1998).
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R. W. Martin, P. G. Middleton, and K. P. O’Donnell, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
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P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
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S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
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Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” Journal of Physics D 43(35), 354002 (2010).
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S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
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Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” Journal of Physics D 43(35), 354002 (2010).
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Niu, N.

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
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Northrup, J. E.

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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R. W. Martin, P. G. Middleton, and K. P. O’Donnell, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
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Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Park, Y. J.

Y. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters,” Appl. Phys. Lett. 83(13), 2578–2580 (2003).
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Quan, Z.

Z. Quan, J. Liu, F. Fang, G. Wang, and F. Jiang, “A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices,” J. Appl. Phys. 118(19), 193102 (2015).
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Reed, M. J.

P. T. Barletta, E. Acar Berkman, B. F. Moody, N. A. El-Masry, A. M. Emara, M. J. Reed, and S. M. Bedair, “Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures,” Appl. Phys. Lett. 90(15), 151109 (2007).
[Crossref]

Rich, D. H.

J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, and D. H. Rich, “Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD,” J. Cryst. Growth 195(1-4), 252–257 (1998).
[Crossref]

Romano, L. T.

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Rosenauer, A.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Shi, S.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth 311(1), 103–106 (2008).
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R. Singh, D. Doppalapudi, T. D. Moustakas, and L. T. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
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W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Song, J. H.

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
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Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
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Sung, Y. M.

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Suski, T.

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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Tadatomo, K.

N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo, “Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes,” J. Appl. Phys. 117(2), 025708 (2015).
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Tao, X.

G. Wang, X. Tao, J. Liu, and F. Jiang, “Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures,” Semicond. Sci. Technol. 30(1), 15018–15023 (2015).
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Tong, Y.

Tsatsulnikov, A. F.

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W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Van de Walle, C. G.

L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures,” Appl. Phys. Lett. 75(25), 3950–3952 (1999).
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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Wang, H.

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
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Wang, L.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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Wang, Q.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
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Wang, W.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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Wu, C.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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X. Wu, J. Liu, and F. Jiang, “Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes,” J. Appl. Phys. 118(16), 164504 (2015).
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Wu, Y.

C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, and Y. Wu, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits,” AIP Adv. 6(5), 55208 (2016).
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Xing, Y.

N. Niu, H. Wang, J. Liu, N. Liu, Y. Xing, J. Han, J. Deng, and G. Shen, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Xu, M.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
[Crossref]

Xu, X.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv, Z. Feng, X. Xu, and Z. Ji, “Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells,” Physica E 76, 1–5 (2016).
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W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo, “Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes,” J. Appl. Phys. 117(2), 025708 (2015).
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Yang, C. C.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Y. Lin, K. Ma, C. Hsu, S. Feng, Y. Cheng, C. Liao, C. C. Yang, C. Chou, C. Lee, and J. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77(19), 2988–2990 (2000).
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Yang, G. M.

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
[Crossref]

Yang, H. C.

S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer,” Appl. Phys. Lett. 97(25), 251114 (2010).
[Crossref]

Yang, J.

Y. Cheng, E. Lin, C. Wu, C. C. Yang, J. Yang, A. Rosenauer, K. Ma, S. Shi, L. C. Chen, C. Pan, and J. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84(14), 2506–2508 (2004).
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Yang, Y.

Y. Yang and Y. Zeng, “Enhanced performance of InGaN light-emitting diodes with InGaN/GaN superlattice and graded-composition InGaN/GaN superlattice interlayers,” Phys. Status Solidi 211(7), 1640–1644 (2014).
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Yi, X.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Yu, P. W.

H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. Kim, “Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition,” J. Appl. Phys. 91(3), 1104–1107 (2002).
[Crossref]

Yu, T.

Yun, F.

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes,” J. Appl. Phys. 116(12), 123101 (2014).
[Crossref]

Y. Li, F. Yun, X. Su, S. Liu, W. Ding, and X. Hou, “Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs,” Jpn. J. Appl. Phys. 53(11), 112103 (2014).
[Crossref]

Zakgeim, A. L.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
[Crossref]

Zavarin, E. E.

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, A. L. Zakgeim, A. E. Cherniakov, N. A. Cherkashin, M. J. Hytch, E. V. Yakovlev, D. S. Bazarevskiy, M. M. Rozhavskaya, and A. F. Tsatsulnikov, “Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice,” J. Cryst. Growth 315(1), 267–271 (2011).
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Zeng, Y.

Y. Yang and Y. Zeng, “Enhanced performance of InGaN light-emitting diodes with InGaN/GaN superlattice and graded-composition InGaN/GaN superlattice interlayers,” Phys. Status Solidi 211(7), 1640–1644 (2014).
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Zhang, J.

Zhang, X.

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Zhong, C.

Zhou, J.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
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C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
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Zhou, S.

S. Zhou and X. Liu, “Effect of V‐pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN‐based green light‐emitting diodes,” Phys. Status Solidi, 10.1002/pssa.201600782 (2016).

Zuo, P.

Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, “Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range,” Sci. Rep. 5(1), 10883 (2015).
[Crossref] [PubMed]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

AIP Adv. (1)

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Figures (9)

Fig. 1
Fig. 1 Schematic of the epitaxial structure of the three samples with varied number of SL periods.
Fig. 2
Fig. 2 PL Spectra of the three samples, obtained by excitation with 410-nm laser light at room temperature.
Fig. 3
Fig. 3 Omega-2theta scan spectra of the yellow InGaN LED structures grown on silicon substrates, obtained with HRXRD (PANalytical X’Pert).
Fig. 4
Fig. 4 FL images of sample A (a), with 16 SL periods, sample B (b), with 24 SL periods, and sample C (c), with 32 SL periods. The images were obtained through excitation with 420–490-nm intense fluorescent light.
Fig. 5
Fig. 5 Comparison of EQE and forward voltage among samples with different numbers of SL periods. All the samples have the same dominant wavelength of 568 nm at 200 mA.
Fig. 6
Fig. 6 Diagrams explaining the opposite effects of (a) N-ICs and (b) M-ICs on luminescence. Within the M-ICs, many nonradiative centers (e.g., dislocations) are generated in the merged regions, as shown by the short red lines, leading to a reduced radiation recombination rate.
Fig. 7
Fig. 7 (a), (b), and (c)SEM images of the V-pits for the three samples, obtained with a HITACHI SU8010 SEM system; (d) diagram showing the two ways to inject holes into the MQWs: via the flat area or via the side-walls of V-pits.
Fig. 8
Fig. 8 Atomic force microscopy (AFM) images of the surface of the p-type GaN layers of LEDs with varied SL periods. The numbers of SL periods are 16 ((a) and (e)), 24 ((b) and (f)), 32 ((c) and (g)), and 40 ((d) and (h)).
Fig. 9
Fig. 9 (a) Optical photograph of the emitting LED. (b) EL spectra and (c) light output power as a function of the injection direct current of sample C with 32 SLs.

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