Abstract

High responsivity is important for solar blind detection because solar blind signals are generally weak. In this work, we achieved a high responsivity of 48 A/W at 262 nm via Au/MgO/MgZnO/MgO/Au structured photodetectors at a 10 V bias. Wurtzite Mg0.55Zn0.45O films with a band gap of 4.57 eV were grown on c-plane sapphire by pulse laser deposition and MgO films were deposited on MgZnO films as barrier layers to induce ionization impact for avalanche gain. The photodetectors achieved a rejection ratio (R262-nm/R350-nm) of over 103 and a cut-off wavelength of 273 nm. The time-resolved response measurement showed a response time of 453 μs. The devices performed good stability without degeneration of responsivity under repeating illumination. The high performance of the photodetector implied a wide potential for solar blind application.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
  3. B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
    [Crossref] [PubMed]
  4. X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
    [Crossref]
  5. E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
    [Crossref]
  6. E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
    [Crossref]
  7. D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
    [Crossref]
  8. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
    [Crossref]
  9. H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
  16. X. Xie, Z. Zhang, B. Li, S. Wang, and D. Shen, “Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO,” Opt. Express 23(25), 32329–32336 (2015).
    [Crossref] [PubMed]
  17. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
    [Crossref]
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    [Crossref] [PubMed]
  20. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
    [Crossref]
  21. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
    [Crossref]
  22. S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
    [Crossref]
  23. Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
    [Crossref]
  24. Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
    [Crossref]
  25. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
    [Crossref]
  26. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
    [Crossref]

2016 (1)

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

2015 (4)

2014 (2)

2013 (2)

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

2011 (3)

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

2010 (1)

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

2009 (4)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

2008 (1)

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

2006 (1)

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

2004 (1)

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

2003 (1)

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

2001 (1)

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

2000 (1)

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

1999 (1)

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

1998 (1)

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

1996 (1)

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Ashioi, M.

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Calle, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Chen, D.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Chen, H.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

Darvish, S. R.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

Ding, K.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Du, X.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Du, X. L.

Y. N. Hou, Z. X. Mei, and X. L. Du, “Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO,” J. Phys. D Appl. Phys. 47(28), 283001 (2014).
[Crossref]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Endo, H.

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Fan, X. W.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Fang, X.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Gan, L.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Gibart, P.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Golberg, D.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Guo, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Han, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Hane, K.

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Hou, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hou, Y. N.

Y. N. Hou, Z. X. Mei, and X. L. Du, “Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO,” J. Phys. D Appl. Phys. 47(28), 283001 (2014).
[Crossref]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Hu, G. C.

Huang, F.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Huang, J.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Huang, X. M.

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

Jiang, M.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Jiang, M. M.

Jiao, S. J.

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Ju, Z. G.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

Kashiwaba, Y.

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Kawasaki, M.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Kikuchi, M.

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Koida, T.

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Koinuma, H.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Kumar, V.

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Kung, P.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Kuznetsov, A. Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Li, B.

Li, B. H.

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Li, H.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Li, X.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Lin, Z.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Liu, J. S.

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

Liu, Y. C.

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Liu, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Liu, Z. L.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Lu, Y. M.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Masubuchi, K.

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Mayes, K.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

McClintock, R.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

Mei, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Mei, Z. X.

Y. N. Hou, Z. X. Mei, and X. L. Du, “Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO,” J. Phys. D Appl. Phys. 47(28), 283001 (2014).
[Crossref]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Mi, K.

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Monroy, E.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Muñoz, E.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Ohkubo, I.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

Ohtomo, A.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Omnès, F.

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Ou, S.-L.

Pau, J. L.

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Razeghi, M.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Rogalski, A.

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Sakurai, Y.

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Sandvik, P.

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Segawa, Y.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Shan, C.

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Shan, C. X.

G. C. Hu, C. X. Shan, N. Zhang, M. M. Jiang, S. P. Wang, and D. Z. Shen, “High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process,” Opt. Express 23(10), 13554–13561 (2015).
[Crossref] [PubMed]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Shen, D.

Shen, D. Z.

G. C. Hu, C. X. Shan, N. Zhang, M. M. Jiang, S. P. Wang, and D. Z. Shen, “High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process,” Opt. Express 23(10), 13554–13561 (2015).
[Crossref] [PubMed]

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Shiell, D.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

Tang, Z. K.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Walker, D.

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Wang, F.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Wang, L.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Wang, L. K.

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

Wang, S.

Wang, S. P.

G. C. Hu, C. X. Shan, N. Zhang, M. M. Jiang, S. P. Wang, and D. Z. Shen, “High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process,” Opt. Express 23(10), 13554–13561 (2015).
[Crossref] [PubMed]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

Wang, Y.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Wuu, D.-S.

Xie, X.

Xue, Q.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Yao, B.

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Yasan, A.

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

Yasuda, T.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Yoshida, Y.

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

Yu, F.-P.

Yu, J.

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

Zhai, T.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Zhan, Z.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Zhang, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhang, J. Y.

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Zhang, N.

Zhang, Q.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Zhang, T.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, T. C.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Zhang, X. H.

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

Zhang, X. W.

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

Zhang, Y.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhang, Z.

X. Xie, Z. Zhang, B. Li, S. Wang, and D. Shen, “Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO,” Opt. Express 23(25), 32329–32336 (2015).
[Crossref] [PubMed]

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z. Z.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Zhao, B.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Zhao, D.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhao, D. X.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Zhao, H.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zheng, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

Zheng, Q.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

Zhou, X.

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Zhu, H.

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Adv. Funct. Mater. (1)

X. Zhou, Q. Zhang, L. Gan, X. Li, H. Li, Y. Zhang, D. Golberg, and T. Zhai, “High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire,” Adv. Funct. Mater. 26(5), 704–712 (2016).
[Crossref]

Adv. Mater. (2)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Appl. Phys. Express (1)

H. Endo, M. Kikuchi, M. Ashioi, Y. Kashiwaba, K. Hane, and Y. Kashiwaba, “High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate,” Appl. Phys. Express 1, 051201 (2008).
[Crossref]

Appl. Phys. Lett. (8)

D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, “Solar-blind AlGaN photodiodes with very low cutoff wavelength,” Appl. Phys. Lett. 76(4), 403–405 (2000).
[Crossref]

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, “High quantum efficiency AlGaN solar-blind p-i-n photodiodes,” Appl. Phys. Lett. 84(8), 1248–1250 (2004).
[Crossref]

A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, “MgxZn1−xO as a II–VI widegap semiconductor alloy,” Appl. Phys. Lett. 72(19), 2466–2468 (1998).
[Crossref]

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980–982 (1999).
[Crossref]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98(22), 221112 (2011).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

J. Appl. Phys. (1)

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

J. Phys. Chem. C (1)

H. Zhu, C. X. Shan, L. K. Wang, J. Zheng, J. Y. Zhang, B. Yao, and D. Z. Shen, “Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with high internal gain,” J. Phys. Chem. C 114(15), 7169–7172 (2010).
[Crossref]

J. Phys. Condens. Matter (1)

E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

J. Phys. D Appl. Phys. (2)

Y. N. Hou, Z. X. Mei, and X. L. Du, “Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO,” J. Phys. D Appl. Phys. 47(28), 283001 (2014).
[Crossref]

J. Yu, C. X. Shan, X. M. Huang, X. W. Zhang, S. P. Wang, and D. Z. Shen, “ZnO-based ultraviolet avalanche photodetectors,” J. Phys. D Appl. Phys. 46(30), 305105 (2013).
[Crossref]

Nano Lett. (1)

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Opt. Express (3)

Opt. Mater. Express (1)

Phys. Status Solidi (1)

S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, J. Y. Zhang, B. Yao, Y. C. Liu, and X. W. Fan, “Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode,” Phys. Status Solidi 3(4), 972–975 (2006).
[Crossref]

Phys. Status Solidi Rapid Res. Lett. (1)

J. Yu, C. X. Shan, J. S. Liu, X. W. Zhang, B. H. Li, and D. Z. Shen, “MgZnO avalanche photodetectors realized in Schottky structures,” Phys. Status Solidi Rapid Res. Lett. 7(6), 425–428 (2013).
[Crossref]

Semicond. Sci. Technol. (1)

E. Monroy, F. Omnès, and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18(4), R33–R51 (2003).
[Crossref]

Solid State Commun. (1)

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and J. Y. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45-46), 2021–2023 (2009).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 SEM images of (a) MgZnO films and (b) MgO/MgZnO films and AFM images of (c) MgZnO films and (d) MgO/MgZnO films on c-plane sapphire.
Fig. 2
Fig. 2 (a) XRD pattern of the MgO/MgZnO films on c-plane sapphire. Inset shows the minor peak at 37.52°, which might be attributed to MgO (111). (b) EDS of the MgO/MgZnO and bare MgZnO films. (c) Absorbance and transmittance of the MgO/MgZnO films on sapphire. Inset shows (αhv)2 versus hv, referring to a band gap of 4.57 eV.
Fig. 3
Fig. 3 (a) Optical microscope image of the Au/MgO/MgZnO/MgO/Au photodetectors. 18 pairs of interdigital electrodes, with a finger width and a gap of 4 μm, a length of 230 μm. The active area: 250 × 300 μm2. (b) Schematic diagram of the photodetectors and the measurement circuit. (c) I-V characteristic under illumination (λ = 262 nm, Xenon lamp) and dark condition. At about 9 V, dark current starts performing significant multiplication. Inset: light and dark current in logarithm scale and the avalanche gain as a function of voltages in a linear scale.
Fig. 4
Fig. 4 (a) Response spectra of the photodetector at 3, 4, 5 V. (b) Normalized responsivity spectrum of the photodetector, measured at 5 V. Inset shows responsivity as a function of operating voltage. At 10 V, responsivity reached as high as 48 A/W. Rejection ratio (R262-nm/R350-nm) was over 103.
Fig. 5
Fig. 5 (a) Time-resolved response of the photodetector. The red curve was the fitting of the scattered experiment data using a 2-order exponential decay formula. Inset shows data in logarithmic scale. (b) Repeating test of the photodetector, showing good stability of the photodetector without degeneration of responsivity with 250-nm ultraviolet light repeatedly on and off.
Fig. 6
Fig. 6 (a) Relative values between the energy bands of ZnO, MgZnO, and MgO. (b) Schematic energy band alignment of the Au/MgO/MgZnO/MgO/Au photodetector.

Tables (1)

Tables Icon

Table 1 Comparison between our device and typical MgZnO based solar blind photodetectors.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

( αhv ) 2 =B( hv E g )
I= I 0 + I 1 e ( t/ τ 1 ) + I 2 e ( t/ τ 2 )
Δ E c( MgO/MgZnO ) =Δ E c( MgO/ZnO ) Δ E c( MgZnO/ZnO )
Δ E v( MgO/MgZnO ) =Δ E v( MgO/ZnO ) Δ E v( MgZnO/ZnO )

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