G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]
[PubMed]
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous Lattice Vibrations of Single- and Few-Layer MoS2,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref]
[PubMed]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, A. Wold, and A. Wold, “Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy,” Phys. Rev. B Condens. Matter 35(12), 6195–6202 (1987).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, and R. A. de Groot, “Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps,” Phys. Rev. B Condens. Matter 35(12), 6203–6206 (1987).
[Crossref]
[PubMed]
Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, and R. A. de Groot, “Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps,” Phys. Rev. B Condens. Matter 35(12), 6203–6206 (1987).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, A. Wold, and A. Wold, “Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy,” Phys. Rev. B Condens. Matter 35(12), 6195–6202 (1987).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref]
[PubMed]
Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref]
[PubMed]
X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87(11), 115413 (2013).
[Crossref]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, A. Wold, and A. Wold, “Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy,” Phys. Rev. B Condens. Matter 35(12), 6195–6202 (1987).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref]
[PubMed]
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]
[PubMed]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, and R. A. de Groot, “Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps,” Phys. Rev. B Condens. Matter 35(12), 6203–6206 (1987).
[Crossref]
[PubMed]
R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, A. Wold, and A. Wold, “Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy,” Phys. Rev. B Condens. Matter 35(12), 6195–6202 (1987).
[Crossref]
[PubMed]
X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]
X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87(11), 115413 (2013).
[Crossref]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]
[PubMed]
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous Lattice Vibrations of Single- and Few-Layer MoS2,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref]
[PubMed]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous Lattice Vibrations of Single- and Few-Layer MoS2,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref]
[PubMed]
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
X. Zhang, X. F. Qiao, W. Shi, J. B. Wu, D. S. Jiang, and P. H. Tan, “Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material,” Chem. Soc. Rev. 44(9), 2757–2785 (2015).
[Crossref]
[PubMed]
Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref]
[PubMed]
Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref]
[PubMed]
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref]
[PubMed]
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]
[PubMed]
S. L. Li, H. Miyazaki, H. Song, H. Kuramochi, S. Nakaharai, and K. Tsukagoshi, “Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates,” ACS Nano 6(8), 7381–7388 (2012).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous Lattice Vibrations of Single- and Few-Layer MoS2,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref]
[PubMed]
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]
[PubMed]
X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87(11), 115413 (2013).
[Crossref]
S. L. Li, H. Miyazaki, H. Song, H. Kuramochi, S. Nakaharai, and K. Tsukagoshi, “Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates,” ACS Nano 6(8), 7381–7388 (2012).
[Crossref]
[PubMed]
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref]
[PubMed]
X. L. Li, X. F. Qiao, Y. F. Shi, L. Liu, T. J. Wang, X. H. Zhao, and B. L. Liang, “Study on the optical properties of ReS2 flakes by unpolarized and polarized optical contrast measurements,” Opt. Mater. Express 8(5), 1107–1116 (2018).
[Crossref]
X. L. Li, X. F. Qiao, L. L. Wang, and Y. F. Shi, “Interference effect based optimized matching between single-layer to five-layer graphene flakes and the SiO2 layer,” Opt. Mater. Express 7(12), 4233–4240 (2017).
[Crossref]
X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87(11), 115413 (2013).
[Crossref]
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref]
[PubMed]
X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan, “Raman spectroscopy of shear and layer breathing modes in multilayer MoS2,” Phys. Rev. B 87(11), 115413 (2013).
[Crossref]
S. L. Li, H. Miyazaki, H. Song, H. Kuramochi, S. Nakaharai, and K. Tsukagoshi, “Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates,” ACS Nano 6(8), 7381–7388 (2012).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
S. L. Li, H. Miyazaki, H. Song, H. Kuramochi, S. Nakaharai, and K. Tsukagoshi, “Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates,” ACS Nano 6(8), 7381–7388 (2012).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, and Z. X. Shen, “Graphene thickness determination using reflection and contrast spectroscopy,” Nano Lett. 7(9), 2758–2763 (2007).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref]
[PubMed]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
C. Casiraghi, A. Hartschuh, E. Lidorikis, H. Qian, H. Harutyunyan, T. Gokus, K. S. Novoselov, and A. C. Ferrari, “Rayleigh imaging of graphene and graphene layers,” Nano Lett. 7(9), 2711–2717 (2007).
[Crossref]
[PubMed]
X. L. Li, X. F. Qiao, Y. F. Shi, L. Liu, T. J. Wang, X. H. Zhao, and B. L. Liang, “Study on the optical properties of ReS2 flakes by unpolarized and polarized optical contrast measurements,” Opt. Mater. Express 8(5), 1107–1116 (2018).
[Crossref]
X. L. Li, X. F. Qiao, L. L. Wang, and Y. F. Shi, “Interference effect based optimized matching between single-layer to five-layer graphene flakes and the SiO2 layer,” Opt. Mater. Express 7(12), 4233–4240 (2017).
[Crossref]
X. L. Li, W. P. Han, J. B. Wu, X. F. Qiao, J. Zhang, and P. H. Tan, “Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination,” Adv. Funct. Mater. 27(19), 1604468 (2017).
[Crossref]
X. Zhang, X. F. Qiao, W. Shi, J. B. Wu, D. S. Jiang, and P. H. Tan, “Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material,” Chem. Soc. Rev. 44(9), 2757–2785 (2015).
[Crossref]
[PubMed]
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]
[PubMed]
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref]
[PubMed]
Y. L. Li, A. Chernikov, X. Zhang, A. Rigosi, H. M. Hill, A. M. van der Zande, D. A. Chenet, E. M. Shih, J. Hone, and T. F. Heinz, “Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2,” Phys. Rev. B 90(20), 205422 (2014).
[Crossref]
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous Lattice Vibrations of Single- and Few-Layer MoS2,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref]
[PubMed]
R. Frisenda, Y. Niu, P. Gant, A. J. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. X. Liu, L. Fu, D. Dumcenco, A. Kis, D. P. D. Lara, and A. Castellanos-Gomez, “Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials,” J. Phys. D Appl. Phys. 50(7), 074002 (2017).
[Crossref]
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, “Electronics based on two-dimensional materials,” Nat. Nanotechnol. 9(10), 768–779 (2014).
[Crossref]
[PubMed]
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