Abstract

Scanning near-field photoluminescence spectroscopy has been applied to distinguish the relevance of quantum well (QW) alloy composition and well width fluctuations on emission linewidth and recombination times in semipolar (202¯1) plane InGaN QWs. It has been found that well width fluctuations, compared to variations of InGaN alloy composition, play a negligible role in defining the photoluminescence linewidth. However, the well width strongly affects the recombination times. Prolonged radiative and nonradiative carrier lifetimes in wide QWs have been attributed to electron and hole separation by in-plane electric fields caused by nonplanarity of QW interfaces.

© 2017 Optical Society of America

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    [Crossref]
  2. S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
    [Crossref]
  3. R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
    [Crossref]
  4. K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
    [Crossref]
  5. R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
    [Crossref]
  6. T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
    [Crossref]
  7. D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
    [Crossref]
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    [Crossref]
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    [Crossref]
  12. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
    [Crossref]
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    [Crossref]
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    [Crossref]
  15. G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
    [Crossref]
  16. D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
    [Crossref]
  17. E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
    [Crossref]
  18. T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
    [Crossref]
  19. M. Funato and Y. Kawakami, “Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations,” J. Appl. Phys. 103(9), 093501 (2008).
    [Crossref]
  20. Ü. Özgür and H. O. Everitt, “Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well,” Phys. Rev. B 67(15), 155308 (2003).
    [Crossref]
  21. S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
    [Crossref]
  22. K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
    [Crossref]
  23. A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
    [Crossref]
  24. C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
    [Crossref]
  25. A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
    [Crossref]

2017 (1)

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

2015 (3)

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

2014 (4)

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

2013 (3)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

2012 (2)

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

2011 (1)

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

2010 (3)

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

2008 (3)

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

M. Funato and Y. Kawakami, “Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations,” J. Appl. Phys. 103(9), 093501 (2008).
[Crossref]

2003 (2)

Ü. Özgür and H. O. Everitt, “Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well,” Phys. Rev. B 67(15), 155308 (2003).
[Crossref]

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

2001 (1)

K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
[Crossref]

2000 (1)

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Abare, A. C.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Adachi, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

André, Y.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Aoudé, O.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Arakawa, Y.

K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
[Crossref]

Aujol, E.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Bagot, P. A. J.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Bahir, G.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Beaumont, B.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Becerra, D. L.

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

Berkowicz, E.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Billingsley, D.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Bremers, H.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Bretagnon, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Brosseau, C.-N.

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

Caro, M. A.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Coldren, L. A.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Davies, M. J.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Dawson, P.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

DenBaars, S. P.

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Disseix, P.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Djerboub, R.

El Gmili, Y.

Enya, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Everitt, H. O.

Ü. Özgür and H. O. Everitt, “Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well,” Phys. Rev. B 67(15), 155308 (2003).
[Crossref]

Feezell, D. F.

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

Fressengeas, N.

Funato, M.

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

M. Funato and Y. Kawakami, “Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations,” J. Appl. Phys. 103(9), 093501 (2008).
[Crossref]

Galtrey, M. J.

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Gaska, R.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Gelžinyte, K.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

Gershoni, D.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Gil, B.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Godfrey, M. J.

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Griffiths, J. T.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Hangleiter, A.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Hickel, T.

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

Hoshino, K.

K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
[Crossref]

Humphreys, C. J.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Ivanov, R.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Jönen, H.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Kalliakos, S.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Kaneta, A.

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Kappers, M. J.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Katayama, K.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Kawakami, Y.

M. Funato and Y. Kawakami, “Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations,” J. Appl. Phys. 103(9), 093501 (2008).
[Crossref]

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Kelchner, K. M.

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

Ketzer, F. A.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Kneissl, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Kuritzky, L. Y.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

Kyono, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Lakin, E.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Langer, T.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Lefebvre, P.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Leonelli, R.

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

Leroux, M.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Leymarie, J.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Lin, Y. D.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Liuolia, V.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Lohr, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Marcinkevicius, S.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Marquardt, O.

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

Martin, T. L.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Menzel, D.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Moody, M. P.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Morel, A.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Moudakir, T.

Nakamura, S.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Nakamura, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Neugebauer, J.

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

O’Reilly, E. P.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Oehler, F.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Ohta, H.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Oliver, R. A.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Orsal, G.

Ougazzaden, A.

Özgür, Ü.

Ü. Özgür and H. O. Everitt, “Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well,” Phys. Rev. B 67(15), 155308 (2003).
[Crossref]

Perrin, M.

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

Pietscher, H.-G.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Pinos, A.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Ploch, S.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Pristovsek, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Rossow, U.

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Salvestrini, J.

Schulz, S.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Shatalov, M.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Shilo, D.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Shur, M. S.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Silva, C.

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

Someya, T.

K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
[Crossref]

Speck, J. S.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

Streque, J.

Sundaram, S.

Sutherland, D.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Taliercio, T.

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

Tang, F.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Tanner, D. P.

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

Thalmair, J.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Tokuyama, S.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Trassoudaine, A.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Ueno, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Uždavinys, T. K.

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

Van de Walle, C. G.

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

Vasson, A.

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

Watson-Parris, D.

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

Wernicke, T.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Weyers, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

Wu, F.

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Wu, Y.

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Yang, J.

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Yang, T.-J.

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Yoshizumi, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Zhao, Y.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Zolotoyabko, E.

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

Zweck, J.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

AIP Advances (1)

S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur, “Transient photoreflectance of AlInN/GaN heterostructures,” AIP Advances 2(4), 042148 (2012).
[Crossref]

Appl. Phys. Express (2)

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar 202¯1 GaN substrates,” Appl. Phys. Express 3(1), 011003 (2010).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Appl. Phys. Lett. (6)

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, L. Y. Kuritzky, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(11), 111107 (2013).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

O. Marquardt, T. Hickel, J. Neugebauer, and C. G. Van de Walle, “Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 103(7), 073115 (2013).
[Crossref]

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells,” Appl. Phys. Lett. 107(21), 211109 (2015).
[Crossref]

R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells,” Appl. Phys. Lett. 110(3), 031109 (2017).
[Crossref]

J. Appl. Phys. (2)

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

M. Funato and Y. Kawakami, “Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations,” J. Appl. Phys. 103(9), 093501 (2008).
[Crossref]

J. Crystal Growth (1)

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Crystal Growth 356, 70–74 (2012).
[Crossref]

J. Displ. Technol. (1)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Displ. Technol. 9(4), 190–198 (2013).
[Crossref]

Opt. Mater. Express (1)

Phys. Rev. B (9)

D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, “Carrier localization mechanisms in Inx Ga1−x N/GaN quantum wells,” Phys. Rev. B 83(11), 115321 (2011).
[Crossref]

E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. Denbaars, and L. A. Coldren, “Measured and calculated radiative lifetime and optical absorption of Inx Ga1−x N/GaN quantum structures,” Phys. Rev. B 61(16) 10994–11008 (2000).
[Crossref]

T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, “S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination,” Phys. Rev. B 90(20), 205302 (2014).
[Crossref]

Ü. Özgür and H. O. Everitt, “Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well,” Phys. Rev. B 67(15), 155308 (2003).
[Crossref]

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, and Y. André, “Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN,” Phys. Rev. B 77(4), 045206 (2008).
[Crossref]

S. Schulz, D. P. Tanner, E. P. O’Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, and P. Dawson, “Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory,” Phys. Rev. B 92(23), 235419 (2015).
[Crossref]

A. Morel, P. Lefebvre, S. Kalliakos, T. Taliercio, T. Bretagnon, and B. Gil, “Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In)N/GaN systems,” Phys. Rev. B 68(4), 045331 (2003).
[Crossref]

C.-N. Brosseau, M. Perrin, C. Silva, and R. Leonelli, “Carrier recombination dynamics in Inx Ga1−x N/GaN multiple quantum wells,” Phys. Rev. B 82(8), 085305 (2010).
[Crossref]

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Phys. Stat. Sol. A (1)

K. Hoshino, T. Someya, and Y. Arakawa, “Structure dependence of electron mobility in GaN/AlGaN multiple quantum wells,” Phys. Stat. Sol. A 188(2), 877–880 (2001).
[Crossref]

Other (1)

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Figures (4)

Fig. 1
Fig. 1 Normalized near-field PL spectra (a) and transients (b) for 2, 4 and 6 nm QWs.
Fig. 2
Fig. 2 Maps of the surface topography (a), the median wavelength (b), the FWHM (c) and the PL decay time (d) for the 2 nm QW.
Fig. 3
Fig. 3 Maps of the surface topography (a), the median wavelength (b), the FWHM (c) and the PL decay time (d) for the 6 nm QW.
Fig. 4
Fig. 4 SNOM maps of the radiative lifetimes for 2 (a), 4 (c) and 6 nm (e) QWs and nonradiative lifetimes for 2 (b), 4 (d) and 6 nm (f) QWs.

Tables (1)

Tables Icon

Table 1 Statistical parameters of the near-field PL scans for the studied samples.

Metrics