Abstract

In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3–5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures.

© 2017 Optical Society of America

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  1. F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
    [Crossref]
  2. M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
    [Crossref]
  3. K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
    [Crossref]
  4. J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
    [Crossref]
  5. P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
    [Crossref]
  6. J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
    [Crossref]
  7. K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
    [Crossref]
  8. F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
    [Crossref]
  9. K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
    [Crossref]
  10. D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
    [Crossref]
  11. P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
    [Crossref]
  12. L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
    [Crossref]
  13. K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
    [Crossref]
  14. T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
    [Crossref]
  15. M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
    [Crossref]
  16. E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
    [Crossref]
  17. D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
    [Crossref]
  18. J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
    [Crossref] [PubMed]
  19. T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
    [Crossref]

2015 (1)

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

2014 (2)

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

2013 (3)

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

2012 (3)

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

2010 (1)

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

2009 (3)

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

2008 (1)

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

2007 (1)

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

2006 (1)

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

2001 (1)

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

1998 (1)

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

1995 (1)

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Ahmad Kamarudin, M.

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

Alén, B.

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

Alferov, Zh. I.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Alonso-Álvarez, D.

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

Balakrishnan, G.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Beer, M.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Bimberg, D.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Böhrer, J.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Bonato, L.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Botha, J. R.

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Bussian, D. A.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Cao, Y.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Carrington, P. J.

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Cui, K.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Dawson, L. R.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Erneux, T.

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

Forrest, S.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

García, J. M.

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

Garleff, J. K.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Gomez-Iglesias, A.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Gösele, U.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Gradkowski, K.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

Grundmann, M.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Guo, X.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Hatami, F.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Hayne, M.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

Heinrichsdorff, F.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Heitz, R.

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

Heydenreich, J.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Hodgson, P.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Hodgson, P. D.

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

Houlihan, J.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

Htoon, H.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Huang, J.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Huffaker, D. L.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Huyet, G.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

Hwang, J.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

Ivanov, S. V.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Kirmse, H.

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

Klimov, V.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Koenraad, P. M.

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Komolibus, K.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

Kop’ev, P. S.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Krier, A.

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Laghumavarapu, R. B.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Ledentsov, N. N.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Lee, K.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

Li, Q.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Liang, B.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

Liang, B. L.

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Liu, H. Y.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

Ma, W.-J.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Madden, G.

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

Mahajumi, A. S.

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Malins, D. B.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Mandel, P.

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

Marent, A.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Martin, A. J.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

Miller, A.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Millunchick, J.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

Millunchick, J. M.

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

Mowbray, D. J.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

Müller-Kirsch, L.

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

Neumann, W.

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

Nowozin, T.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

O’Reilly, E. P.

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

Ochalski, T. J.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

Pavarelli, N.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

Phillips, J. D.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

Piwonski, T.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

Pulka, J.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

Rafailov, E. U.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Rambabu, P.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Reyner, C. J.

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

Richter, U.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Ripalda, J. M.

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

Ruvimov, S. S.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Schliwa, A.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

Sibbett, W.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Smakman, E. P.

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Stier, O.

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

Tatebayashi, J.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Teran, A.

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

Ustinov, V. M.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

Viktorov, E. A.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

Wagener, M. C.

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Wei, Y.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Werner, P.

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

White, S. J.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

Williams, D. P.

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

Ya. Meltser, B.

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

Young, R. J.

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

Zhang, Y.

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

Zhuang, Q.

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Zhuang, Q. D.

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

Appl. Phys. Lett. (9)

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, and Zh. I. Alferov, “Radiative recombination in type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 67(5), 656 (1995).
[Crossref]

K. Komolibus, T. Piwonski, K. Gradkowski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, and J. Houlihan, “Ultrafast dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 106(3), 031106 (2015).
[Crossref]

D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, “Optical investigation of type II GaSb/GaAs self-assembled quantum dots,” Appl. Phys. Lett. 91 (26), 263103 (2007).
[Crossref]

L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg, H. Kirmse, and W. Neumann, “Many-particle effects in type II quantum dots,” Appl. Phys. Lett. 78(10), 1418 (2001).
[Crossref]

K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O’Reilly, and D. L. Huffaker, “Complex emission dynamics of type-II GaSb/GaAs quantum dots,” Appl. Phys. Lett. 95(6), 061102 (2009).
[Crossref]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett. 94(12), 123504 (2009).
[Crossref]

E. A. Viktorov, T. Erneux, P. Mandel, T. Piwonski, G. Madden, J. Pulka, G. Huyet, and J. Houlihan, “Recovery time scales in a reversed-biased quantum dot absorber,” Appl. Phys. Lett. 94(26), 263502 (2009).
[Crossref]

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett. 89(17), 171111 (2006).
[Crossref]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Induced absorption dynamics in quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett. 97(12), 051107 (2010).
[Crossref]

IEEE Electron Dev. Lett. (1)

K. Cui, W.-J. Ma, Y. Zhang, J. Huang, Y. Wei, Y. Cao, X. Guo, and Q. Li, “540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier,” IEEE Electron Dev. Lett. 34(6), 759–761 (2013).
[Crossref]

J. Appl. Phys. (2)

J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion,” J. Appl. Phys. 111(7), 074514 (2012).
[Crossref]

P. D. Hodgson, R. J. Young, M. Ahmad Kamarudin, P. J. Carrington, A. Krier, Q. D. Zhuang, E. P. Smakman, P. M. Koenraad, and M. Hayne, “Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures,” J. Appl. Phys. 114(7), 073519 (2013).
[Crossref]

J. Phys. D: Appl. Phys. (1)

M. Hayne, R. J. Young, E. P. Smakman, T. Nowozin, P. Hodgson, J. K. Garleff, P. Rambabu, P. M. Koenraad, A. Marent, L. Bonato, A. Schliwa, and D. Bimberg, “The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory,” J. Phys. D: Appl. Phys. 46(26), 264001 (2013).
[Crossref]

Journal of Applied Physics (1)

M. C. Wagener, P. J. Carrington, J. R. Botha, and A. Krier, “Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings”, Journal of Applied Physics,  116(4), 044304 (2014).
[Crossref]

Nanotechnology (1)

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker, “Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well,” Nanotechnology 19(29), 295704 (2008).
[Crossref] [PubMed]

Phys. B: Cond. Matter (1)

P. J. Carrington, A. S. Mahajumi, M. C. Wagener, J. R. Botha, Q. Zhuang, and A. Krier, “Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells,” Phys. B: Cond. Matter 407(10), 1493–1496 (2012).
[Crossref]

Phys. Rev. Appl. (1)

J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells,” Phys. Rev. Appl. 1(5), 051003 (2014).
[Crossref]

Phys. Rev. B (2)

K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, and D. L. Huffaker, “Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems,” Phys. Rev. B 85(3), 035432 (2012).
[Crossref]

F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov, “Carrier dynamics in type-II GaSb/GaAs quantum dots,” Phys. Rev. B 57(8), 4635 (1998).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 Transmission spectra of SOA for various RB voltages. Inset: ASE spectra for various forward bias currents. The WL transition is expected to occur around 950 nm [9].
Fig. 2
Fig. 2 Experimental pump-induced gain dynamics and fitting (black) for different RB voltages 0–3 V. Inset: the parameter τs and its fitting (black line) to τs = τs,0exp(−V/V0) as a function of voltage V with τs,0 ≈ 300 ps and V0 = 3 V.
Fig. 3
Fig. 3 Gain (left) and phase (right) dynamics at 1020 nm for a variety of bias levels. Individual time traces have been vertically offset for clarity.
Fig. 4
Fig. 4 (left) Schematic of hole processes considered in the model: (1) Single photon absorption (2) Two photon absorption into barrier (3) Capture from barrier to 2D gas (4) Capture from 2D gas to dot (5) Escape from dot to 2D gas (right) Calculated hole dynamics for nd (0) = 0.5 and n(0) varying from top to bottom as 1, 0.75, 0.5, 0.25, 0.125. Inset: FB case for nd (0) = 1.0 and n(0) = 0.5.
Fig. 5
Fig. 5 Gain (left) and phase (right) dynamics at 1050 nm for a variety of bias levels. Individual time traces have been vertically offset for clarity.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

n d = 1 τ cap n 2 D ( 1 n d ) 1 τ esc n d 1 τ n d ,
n 2 D = 1 τ relax n 1 τ cap n 2 D ( 1 n d ) + 1 τ esc n d 1 τ GaAs n 2 D ,
n = 1 τ relax n 1 τ GaAs n ,

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