Abstract

Monolayer (ML) transition metal dichalcogenides (TMDCs) are thought to be highly promising materials for the optoelectronic and nanophotonic applications. However, the low absorption cross section and photoluminescence (PL) quantum yield in such atomically thin layers restrict their applications. Considering that the energy transfer in a heterostructure can modulate TMDCs’ optical properties, a type I heterostructure geometry comprising ML TMDCs and lead halide perovskite quantum dots (QDs) has the potential to overcome these shortcomings. In this work, spin-coating the CsPbBr3 QDs on ML WS2 results in ~12.7 times enhancement in the PL intensity of ML WS2 at 295K. This giant enhancement is attributed to the energy transfer process from CsPbBr3 QDs to WS2 with a ~40% energy transfer efficiency and ~2 × 108 s−1 energy transfer rate. Besides, we observed that the internal quantum efficiency of ML WS2 is increased from 6.35% to 29.01%. The result demonstrates the feasibility of using perovskite QDs and ML TMDCs to form a type I heterostructure and improve the performance of the TMDC-based optoelectronic devices.

© 2017 Optical Society of America

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References

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    [Crossref]
  24. M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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  33. M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
    [Crossref] [PubMed]
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    [Crossref] [PubMed]

2017 (3)

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
[Crossref]

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
[Crossref] [PubMed]

C. Ruppert, A. Chernikov, H. M. Hill, A. F. Rigosi, and T. F. Heinz, “The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation,” Nano Lett. 17(2), 644–651 (2017).
[Crossref] [PubMed]

2016 (7)

V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
[Crossref] [PubMed]

K. Wei, Z. Xu, R. Chen, X. Zheng, X. Cheng, and T. Jiang, “Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots,” Opt. Lett. 41(16), 3821–3824 (2016).
[Crossref] [PubMed]

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
[Crossref] [PubMed]

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref] [PubMed]

K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
[Crossref]

V. K. Ravi, G. B. Markad, and A. Nag, “Band edge energies and excitonic transition probabilities of Colloidal CsPbX3(X = Cl, Br, I) perovskite nanocrystals,” ACS Energy Lett. 1(4), 665–671 (2016).
[Crossref]

S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
[Crossref]

2015 (5)

L. Yuan and L. Huang, “Exciton dynamics and annihilation in WS2 2D semiconductors,” Nanoscale 7(16), 7402–7408 (2015).
[Crossref] [PubMed]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
[Crossref] [PubMed]

K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
[Crossref] [PubMed]

K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
[Crossref] [PubMed]

2014 (8)

X. Fu, J. Qian, X. Qiao, P. Tan, and Z. Peng, “Nonlinear saturable absorption of vertically stood WS2 nanoplates,” Opt. Lett. 39(22), 6450–6453 (2014).
[Crossref] [PubMed]

Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
[Crossref] [PubMed]

O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
[Crossref] [PubMed]

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

F. Prins, A. J. Goodman, and W. A. Tisdale, “Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.,” Nano Lett. 14(11), 6087–6091 (2014).
[Crossref] [PubMed]

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
[Crossref]

2013 (6)

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
[Crossref]

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

2012 (2)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
[Crossref] [PubMed]

2011 (1)

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

2010 (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

1998 (1)

G. L. Frey, R. Tenne, M. J. Matthews, M. S. Dresselhaus, and G. Dresselhaus, “Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman Measurements,” J. Mater. Res. 13(9), 2412–2417 (1998).
[Crossref]

Addou, R.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref] [PubMed]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Ager, J. W.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref] [PubMed]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Ahn, G. H.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref] [PubMed]

Aleithan, S. H.

S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
[Crossref]

Amani, M.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
[Crossref] [PubMed]

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Azcatl, A.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Bellus, M. Z.

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
[Crossref]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Bodnarchuk, M. I.

L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
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V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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Cao, B.

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T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
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K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
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K. Wei, Z. Xu, R. Chen, X. Zheng, X. Cheng, and T. Jiang, “Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots,” Opt. Lett. 41(16), 3821–3824 (2016).
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C. Ruppert, A. Chernikov, H. M. Hill, A. F. Rigosi, and T. F. Heinz, “The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation,” Nano Lett. 17(2), 644–651 (2017).
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G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
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F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
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W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
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A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
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C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
[Crossref]

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M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
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H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
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Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
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M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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G. L. Frey, R. Tenne, M. J. Matthews, M. S. Dresselhaus, and G. Dresselhaus, “Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman Measurements,” J. Mater. Res. 13(9), 2412–2417 (1998).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Eda, G.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Feng, J.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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G. L. Frey, R. Tenne, M. J. Matthews, M. S. Dresselhaus, and G. Dresselhaus, “Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman Measurements,” J. Mater. Res. 13(9), 2412–2417 (1998).
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Fu, X.

Fujita, T.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
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Gadermaier, C.

V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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Gao, T.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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Ghorannevis, Z.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Gong, C.

C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
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F. Prins, A. J. Goodman, and W. A. Tisdale, “Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.,” Nano Lett. 14(11), 6087–6091 (2014).
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Gupta, G.

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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Han, W.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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He, J.-H.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

He, R.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
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Heinz, T. F.

C. Ruppert, A. Chernikov, H. M. Hill, A. F. Rigosi, and T. F. Heinz, “The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation,” Nano Lett. 17(2), 644–651 (2017).
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X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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Hendon, C. H.

L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
[Crossref] [PubMed]

Hill, H. M.

C. Ruppert, A. Chernikov, H. M. Hill, A. F. Rigosi, and T. F. Heinz, “The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation,” Nano Lett. 17(2), 644–651 (2017).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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Hong, X.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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Hu, Z.

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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Huang, L.

L. Yuan and L. Huang, “Exciton dynamics and annihilation in WS2 2D semiconductors,” Nanoscale 7(16), 7402–7408 (2015).
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Hwang, H. Y.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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Javey, A.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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Ji, Q.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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Jiang, T.

K. Wei, Z. Xu, R. Chen, X. Zheng, X. Cheng, and T. Jiang, “Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots,” Opt. Lett. 41(16), 3821–3824 (2016).
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K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
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Jin, C.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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Ju, J.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
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M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Kioupakis, E.

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
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S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
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L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
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L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
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K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
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K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
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M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
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Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
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Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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Liu, X.

O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
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A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
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O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
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Lu, J.

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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V. K. Ravi, G. B. Markad, and A. Nag, “Band edge energies and excitonic transition probabilities of Colloidal CsPbX3(X = Cl, Br, I) perovskite nanocrystals,” ACS Energy Lett. 1(4), 665–671 (2016).
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O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
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V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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V. K. Ravi, G. B. Markad, and A. Nag, “Band edge energies and excitonic transition probabilities of Colloidal CsPbX3(X = Cl, Br, I) perovskite nanocrystals,” ACS Energy Lett. 1(4), 665–671 (2016).
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T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
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Peimyoo, N.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
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Pogna, E. A. A.

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F. Prins, A. J. Goodman, and W. A. Tisdale, “Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.,” Nano Lett. 14(11), 6087–6091 (2014).
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Qi, Z.

Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
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Qiao, X.

Qiu, C.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
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S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
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O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
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V. K. Ravi, G. B. Markad, and A. Nag, “Band edge energies and excitonic transition probabilities of Colloidal CsPbX3(X = Cl, Br, I) perovskite nanocrystals,” ACS Energy Lett. 1(4), 665–671 (2016).
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Ren, Y.

K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
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C. Ruppert, A. Chernikov, H. M. Hill, A. F. Rigosi, and T. F. Heinz, “The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation,” Nano Lett. 17(2), 644–651 (2017).
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O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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Shang, J.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
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K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
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K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
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Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
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Shi, G.

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
[Crossref] [PubMed]

Shi, J.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
[Crossref] [PubMed]

Shi, S.-F.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Shih, I.

O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
[Crossref] [PubMed]

Shih, M.-H.

K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
[Crossref] [PubMed]

Song, X.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

Sow, C. H.

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
[Crossref] [PubMed]

Stinaff, E.

S. H. Aleithan, M. Y. Livshits, S. Khadka, J. J. Rack, M. E. Kordesch, and E. Stinaff, “Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayer,” Phys. Rev. B 94(3), 035445 (2016).
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Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
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Sun, L.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
[Crossref]

Sun, Y.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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Taheri, P.

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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Talapatra, S.

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
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Tan, P.

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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X. Fu, J. Qian, X. Qiao, P. Tan, and Z. Peng, “Nonlinear saturable absorption of vertically stood WS2 nanoplates,” Opt. Lett. 39(22), 6450–6453 (2014).
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T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
[Crossref] [PubMed]

Tan, P.-H.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Tempra, I.

V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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Tenne, R.

G. L. Frey, R. Tenne, M. J. Matthews, M. S. Dresselhaus, and G. Dresselhaus, “Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman Measurements,” J. Mater. Res. 13(9), 2412–2417 (1998).
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Tisdale, W. A.

F. Prins, A. J. Goodman, and W. A. Tisdale, “Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.,” Nano Lett. 14(11), 6087–6091 (2014).
[Crossref] [PubMed]

Toh, M.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
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Tongay, S.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
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V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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O. Salehzadeh, N. H. Tran, X. Liu, I. Shih, and Z. Mi, “Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices,” Nano Lett. 14(7), 4125–4130 (2014).
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Vella, D.

V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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Venkatakrishnan, A.

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
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Voiry, D.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
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V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, “Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides,” Nano Lett. 16(4), 2786–2791 (2016).
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C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
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L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
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Wang, E.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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Wang, F.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
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T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
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Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
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C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
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Wang, Y.

Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
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Wei, K.

K. Wei, Z. Xu, R. Chen, X. Zheng, X. Cheng, and T. Jiang, “Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots,” Opt. Lett. 41(16), 3821–3824 (2016).
[Crossref] [PubMed]

K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
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K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
[Crossref] [PubMed]

Winchester, A.

M. K. L. Man, S. Deckoff-Jones, A. Winchester, G. Shi, G. Gupta, A. D. Mohite, S. Kar, E. Kioupakis, S. Talapatra, and K. M. Dani, “Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer,” Sci. Rep. 6(1), 20890 (2016).
[Crossref] [PubMed]

Wu, J.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

Wu, K.

K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
[Crossref] [PubMed]

Wu, T.-Y.

K. C. J. Lee, Y.-H. Chen, H.-Y. Lin, C.-C. Cheng, P.-Y. Chen, T.-Y. Wu, M.-H. Shih, K.-H. Wei, L.-J. Li, and C.-W. Chang, “Plasmonic gold nanorods coverage influence on enhancement of the photoluminescence of two-dimensional MoS2 monolayer,” Sci. Rep. 5, 16374 (2015).
[Crossref] [PubMed]

Wu, X.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
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Xiao, D.

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
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Xiao, J.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Xie, L.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Xu, S.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Xu, X.

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

Xu, Z.

Yablonovitch, E.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Yakunin, S.

L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
[Crossref] [PubMed]

Yamaguchi, H.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Yan, Y.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Yang, R. X.

L. Protesescu, S. Yakunin, M. I. Bodnarchuk, F. Krieg, R. Caputo, C. H. Hendon, R. X. Yang, A. Walsh, and M. V. Kovalenko, “Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut,” Nano Lett. 15(6), 3692–3696 (2015).
[Crossref] [PubMed]

Yao, W.

X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,” Nat. Phys. 10(5), 343–350 (2014).
[Crossref]

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Ye, H.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
[Crossref] [PubMed]

Yu, T.

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
[Crossref]

Yuan, H.

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

Yuan, L.

L. Yuan and L. Huang, “Exciton dynamics and annihilation in WS2 2D semiconductors,” Nanoscale 7(16), 7402–7408 (2015).
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Zeng, H.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Zeng, X. C.

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
[Crossref]

Zhang, G.

Y. Li, Z. Qi, M. Liu, Y. Wang, X. Cheng, G. Zhang, and L. Sheng, “Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates,” Nanoscale 6(24), 15248–15254 (2014).
[Crossref] [PubMed]

Zhang, H.

C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
[Crossref]

Zhang, X.

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, “Near-unity photoluminescence quantum yield in MoS2,” Science 350(6264), 1065–1068 (2015).
[Crossref] [PubMed]

Zhang, Y.

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

Zhao, H.

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng, and H. Zhao, “Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers,” Nanoscale Horiz. 2(1), 31–36 (2017).
[Crossref]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Zhao, W.

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Zheng, X.

K. Wei, Z. Xu, R. Chen, X. Zheng, X. Cheng, and T. Jiang, “Temperature-dependent excitonic photoluminescence excited by two-photon absorption in perovskite CsPbBr3 quantum dots,” Opt. Lett. 41(16), 3821–3824 (2016).
[Crossref] [PubMed]

K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
[Crossref]

Zhou, J.

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

Zhu, B.

H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, “Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides,” Sci. Rep. 3, 1608 (2013).
[Crossref] [PubMed]

Zhu, C.

T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, “Valley-selective circular dichroism of monolayer molybdenum disulphide,” Nat. Commun. 3, 887 (2012).
[Crossref] [PubMed]

ACS Energy Lett. (1)

V. K. Ravi, G. B. Markad, and A. Nag, “Band edge energies and excitonic transition probabilities of Colloidal CsPbX3(X = Cl, Br, I) perovskite nanocrystals,” ACS Energy Lett. 1(4), 665–671 (2016).
[Crossref]

ACS Nano (4)

Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary,” ACS Nano 7(10), 8963–8971 (2013).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H.-Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

A. Venkatakrishnan, H. Chua, P. Tan, Z. Hu, H. Liu, Y. Liu, A. Carvalho, J. Lu, and C. H. Sow, “Microsteganography on WS2 monolayers tailored by direct laser painting,” ACS Nano 11(1), 713–720 (2017).
[Crossref] [PubMed]

W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, and G. Eda, “Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.,” ACS Nano 7(1), 791–797 (2013).
[Crossref] [PubMed]

Adv. Opt. Mater. (2)

K. Wei, X. Zheng, X. Cheng, C. Shen, and T. Jiang, “Observation of ultrafast exciton–exciton annihilatioN in CsPbBr3 quantum dots,” Adv. Opt. Mater. 4(12), 1993–1997 (2016).
[Crossref]

C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, “Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition,” Adv. Opt. Mater. 2(2), 131–136 (2014).
[Crossref]

Appl. Phys. Lett. (2)

J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, “Band offsets and heterostructures of two-dimensional semiconductors,” Appl. Phys. Lett. 102(1), 012111 (2013).
[Crossref]

C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).
[Crossref]

J. Am. Chem. Soc. (1)

K. Wu, G. Liang, Q. Shang, Y. Ren, D. Kong, and T. Lian, “Ultrafast interfacial electron and hole transfer from CsPbBr3 perovskite quantum dots,” J. Am. Chem. Soc. 137(40), 12792–12795 (2015).
[Crossref] [PubMed]

J. Mater. Res. (1)

G. L. Frey, R. Tenne, M. J. Matthews, M. S. Dresselhaus, and G. Dresselhaus, “Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman Measurements,” J. Mater. Res. 13(9), 2412–2417 (1998).
[Crossref]

Nano Lett. (6)

F. Prins, A. J. Goodman, and W. A. Tisdale, “Reduced dielectric screening and enhanced energy transfer in single- and few-layer MoS2.,” Nano Lett. 14(11), 6087–6091 (2014).
[Crossref] [PubMed]

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G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from Chemically Exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
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Nanoscale (3)

V. Vega-Mayoral, D. Vella, T. Borzda, M. Prijatelj, I. Tempra, E. A. A. Pogna, S. Dal Conte, P. Topolovsek, N. Vujicic, G. Cerullo, D. Mihailovic, and C. Gadermaier, “Exciton and charge carrier dynamics in few-layer WS2.,” Nanoscale 8(10), 5428–5434 (2016).
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Nanoscale Horiz. (1)

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Nat. Commun. (1)

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Nat. Phys. (1)

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Phys. Rev. B (1)

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Phys. Rev. Lett. (1)

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Sci. Rep. (3)

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Science (1)

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Figures (4)

Fig. 1
Fig. 1

Characterization of ML WS2 and CsPbBr3. (a) SEM image of the ML WS2 in lighter color. (b) Typical Raman spectra of the ML WS2 under 457 nm laser. (c) AFM of the ML WS2 showing a height less than 1 nm. (d) PL spectra of ML WS2 flake and CsPbBr3 QDs (0.1 mg/ml) on sapphire plates for different incident power of 405 nm laser. (e) Statistical distribution of the length along the CsPbBr3 long edges. The average length of the long edges is about 11.07 nm. The inset picture is TEM image of the CsPbBr3 QDs. (f) Schematic of theoretically predicted band alignments of CsPbBr3/WS2 heterostructure and possible charge separation, transfer and recombination pathways. The gray dashed line represents the mid-gap states. The straight upward arrows (purple) represent the excitation by 405 nm laser. Those straight downward arrows (red) represent the radiative recombination. All the measurements were carried out at 295K under ambient atmospheric conditions.

Fig. 2
Fig. 2

Characterization of the isolated ML WS2 and ML WS2 covered by CsPbBr3 QDs with a concentration of 0.5 mg/ml. (a) AFM image of the CsPbBr3/WS2 heterostructure. (b) Raman spectra of isolated ML WS2 and CsPbBr3/WS2 heterostructure under 457 nm CW laser. The laser can excite both the WS2 and CsPbBr3. (c) Typical PL spectra of an isolated ML WS2 and CsPbBr3/WS2 heterostructure under different incident powers of 405 nm laser. The magenta line represents the isolated WS2 PL signal after multiplying 5. All the measurements were carried out at 295K under ambient atmospheric conditions.

Fig. 3
Fig. 3

PL decay curves of isolated CsPbBr3 QDs and CsPbBr3 QDs in heterostructure under 405 nm pulse laser for different excitation fluence in air. The gray lines are the IRF of the system with a resolution (FWHM of IRF) about 300 ps.

Fig. 4
Fig. 4

Transient absorption (TA) spectra of WS2, CsPbBr3 QDs and CsPbBr3/WS2 heterostructure upon excitation at 3.1 eV with a fluence of 160µJ cm−2 at 295 K. (a) and (b) 2D plots of TA from WS2 and CsPbBr3/WS2 heterostructure, respectively. (c) TA spectra for isolated WS2, CsPbBr3 QDs and CsPbBr3/WS2 heterostructure at 700 fs pump-probe delay. (d) Evolution of TA signals at the WS2 A-exciton resonance in isolated WS2 and CsPbBr3/WS2 heterostructure.

Tables (1)

Tables Icon

Table 1 Fitting results of the TA kinetics resonance in isolated WS2 and CsPbBr3/WS2 at WS2 A-exciton.

Equations (2)

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η ET =1( τ DA / τ D ).
k ET = τ DA 1 τ D 1 .

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