Abstract

Recently, two-dimensional materials were widely studied as candidates for new generation of photodetectors. In this paper, we reported on the fabrication and the optoelectronic characterizations of p-type gallium selenide (GaSe) back-gated field effect transistor based photodetector. The phototransistor showed excellent gate control capability with an ION/IOFF value exceeding 103. The photoresponsivity can be easily tunable to maximum value of 1.4 AW–1 by changing the gate voltage, however, the photodetector showed the best performance at gate voltage of −18V, with photoresponsivity, external quantum efficiency and detectivity of 0.9 AW–1, 210% and 8.08 × 1011 cmHz0.5W–1, respectively.

© 2017 Optical Society of America

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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  4. D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
    [Crossref]
  5. S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [PubMed]
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    [PubMed]
  22. P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
    [Crossref] [PubMed]
  23. J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
    [Crossref] [PubMed]
  24. X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
    [Crossref]

2016 (5)

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

2015 (5)

N. Seeburrun, E. F. Archibong, and P. Ramasami, “Mono and digallium selenide clusters as potential superhalogens,” J. Mol. Model. 21(3), 42 (2015).
[Crossref] [PubMed]

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

J. O. Island, S. I. Blanter, and M. Buscema, “H. SJ van der Zant, and A. Castellanos-Gomez, “Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors,” Nano Lett. 15, 7853 (2015).
[Crossref] [PubMed]

J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
[Crossref]

2014 (5)

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

2013 (2)

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

2012 (3)

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

2010 (2)

M. O. Vorobets, “Effect of pressure on the electrical properties of GaSe/InSe heterocontacts,” Rev. Mex. Fis. 56, 441 (2010).

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Abderrahmane, A.

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

Archibong, E. F.

N. Seeburrun, E. F. Archibong, and P. Ramasami, “Mono and digallium selenide clusters as potential superhalogens,” J. Mol. Model. 21(3), 42 (2015).
[Crossref] [PubMed]

Avouris, P.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Bao, Q.

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

Baugher, B. W. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Blanter, S. I.

J. O. Island, S. I. Blanter, and M. Buscema, “H. SJ van der Zant, and A. Castellanos-Gomez, “Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors,” Nano Lett. 15, 7853 (2015).
[Crossref] [PubMed]

Buscema, M.

J. O. Island, S. I. Blanter, and M. Buscema, “H. SJ van der Zant, and A. Castellanos-Gomez, “Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors,” Nano Lett. 15, 7853 (2015).
[Crossref] [PubMed]

Chen, X.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Cheng, C.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Choi, M. S.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

Chu, J.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Churchill, H. O. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Das, S.

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
[Crossref]

Dhanabalan, S. C.

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

Dong, S.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Dravid, V. P.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

Du, S.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Duan, X.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Dubey, M.

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
[Crossref]

Fan, Z.

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

Feng, W.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Ferrari, A. C.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Gao, Y.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Geohegan, D. B.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Ghosh, A.

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Grayson, M.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Gu, L.

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

Hu, P.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Huang, H.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Huang, Z.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Idrobo, J. C.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Ishizawa, S.

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

Island, J. O.

J. O. Island, S. I. Blanter, and M. Buscema, “H. SJ van der Zant, and A. Castellanos-Gomez, “Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors,” Nano Lett. 15, 7853 (2015).
[Crossref] [PubMed]

Jarillo-Herrero, P.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Jin, B.

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

Karande, S. D.

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Kaushik, N.

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Kayci, M.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Kim, N.-H.

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

Kis, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Ko, P. J.

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

Koppens, F. H. L.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Krupanidhi, S. B.

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Late, D.

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Late, D. J.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Lee, D.-Y.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Li, E.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Li, H.

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

Li, H. M.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

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H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Lin, T.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Liu, B.

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Liu, X.

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

Lodha, S.

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Long, Y.

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Luo, J.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Matte, H. S. S. R.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

Meng, X.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

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P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

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F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Narang, D. S.

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

Panchakarla, L. S.

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Polini, M.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

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S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

Qu, D.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

Ra, C.-H.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

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N. Seeburrun, E. F. Archibong, and P. Ramasami, “Mono and digallium selenide clusters as potential superhalogens,” J. Mol. Model. 21(3), 42 (2015).
[Crossref] [PubMed]

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D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Robinson, J. A.

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
[Crossref]

Sandhu, A.

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

Seeburrun, N.

N. Seeburrun, E. F. Archibong, and P. Ramasami, “Mono and digallium selenide clusters as potential superhalogens,” J. Mol. Model. 21(3), 42 (2015).
[Crossref] [PubMed]

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J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

Subrahmanyam, K. S.

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Sun, J.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

Takamura, T.

P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

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S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
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Terrones, M.

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
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A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
[Crossref] [PubMed]

Vitiello, M. S.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
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M. O. Vorobets, “Effect of pressure on the electrical properties of GaSe/InSe heterocontacts,” Rev. Mex. Fis. 56, 441 (2010).

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H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
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Wang, L.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
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Wang, P.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
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Wang, X.

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
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P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

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P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Wu, J.

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

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P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

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X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

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Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
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Yan, A.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

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J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

Yang, J.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
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J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

Ye, P.

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

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Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Yoo, W. J.

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
[PubMed]

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P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

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Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

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X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

Zhang, H.

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

Zhang, J.

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
[Crossref] [PubMed]

Zhang, Q.

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

Zheng, Z. Q.

J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

Zhou, X.

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

ACS Nano (2)

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6(6), 5635–5641 (2012).
[Crossref] [PubMed]

Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye, and X. Duan, “ Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions, ” ACS Nano 10(5), 4895–4919 (2016).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

D. J. Late, B. Liu, H. S. S. R. Matte, C. N. R. Rao, and V. P. Dravid, “Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates,” Adv. Funct. Mater. 22(9), 1894–1905 (2012).
[Crossref]

Adv. Mater. (1)

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Annu. Rev. Mater. Res. (1)

S. Das, J. A. Robinson, M. Dubey, H. Terrones, and M. Terrones, “Beyond graphene: Progress in novel two-dimensional materials and van der Waals solids,” Annu. Rev. Mater. Res. 45(1), 1–27 (2015).
[Crossref]

Appl. Phys. Lett. (2)

S. D. Karande, N. Kaushik, D. S. Narang, D. Late, and S. Lodha, “Thickness tunable transport in alloyed WSSe field effect transistors,” Appl. Phys. Lett. 109(14), 142101 (2016).
[Crossref]

H. Huang, P. Wang, Y. Gao, X. Wang, T. Lin, J. Wang, L. Liao, J. Sun, X. Meng, Z. Huang, X. Chen, and J. Chu, “Highly sensitive phototransistor based on GaSe nanosheets,” Appl. Phys. Lett. 107(14), 143112 (2015).
[Crossref]

J. Mater. Chem. C Mater. Opt. Electron. Devices (1)

X. Xiong, Q. Zhang, X. Zhou, B. Jin, H. Li, and T. Zhai, “One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(33), 7817–7823 (2016).
[Crossref]

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N. Seeburrun, E. F. Archibong, and P. Ramasami, “Mono and digallium selenide clusters as potential superhalogens,” J. Mol. Model. 21(3), 42 (2015).
[Crossref] [PubMed]

Nano Lett. (2)

J. O. Island, S. I. Blanter, and M. Buscema, “H. SJ van der Zant, and A. Castellanos-Gomez, “Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors,” Nano Lett. 15, 7853 (2015).
[Crossref] [PubMed]

P. Hu, L. Wang, M. Yoon, J. Zhang, W. Feng, X. Wang, Z. Wen, J. C. Idrobo, Y. Miyamoto, D. B. Geohegan, and K. Xiao, “Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates,” Nano Lett. 13(4), 1649–1654 (2013).
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Nanoscale (2)

J. D. Yao, Z. Q. Zheng, J. M. Shao, and G. W. Yang, “Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition,” Nanoscale 7(36), 14974–14981 (2015).
[Crossref] [PubMed]

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
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Nanotechnology (2)

A. Abderrahmane, P. J. Ko, T. V. Thu, S. Ishizawa, T. Takamura, and A. Sandhu, “High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors,” Nanotechnology 25(36), 365202 (2014).
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P. J. Ko, A. Abderrahmane, T. Takamura, N.-H. Kim, and A. Sandhu, “Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector,” Nanotechnology 27(32), 325202 (2016).
[Crossref] [PubMed]

Nat. Commun. (1)

X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,” Nat. Commun. 5, 4007 (2014).
[PubMed]

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F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
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B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
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O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
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Rev. Mex. Fis. (1)

M. O. Vorobets, “Effect of pressure on the electrical properties of GaSe/InSe heterocontacts,” Rev. Mex. Fis. 56, 441 (2010).

Sci. Rep. (1)

H. M. Li, D.-Y. Lee, M. S. Choi, D. Qu, X. Liu, C.-H. Ra, and W. J. Yoo, “Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors,” Sci. Rep. 4, 4041 (2014).
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Solid State Commun. (1)

D. J. Late, A. Ghosh, K. S. Subrahmanyam, L. S. Panchakarla, S. B. Krupanidhi, and C. N. R. Rao, “Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes,” Solid State Commun. 150(15-16), 734–738 (2010).
[Crossref]

Other (2)

Z.-Q. Xu, Y. Zhang, Z. Wang, Y. Shen, W. Huang, X. Xia, W. Yu, Y. Xue, L. Sun, C. Zheng, Y. Lu, L. Liao, and Q. Bao, “Atomically thin lateral p–n junction photodetector with large effective detection area,” 2D Materials 3, 041001 (2016).
[Crossref]

O. D. Pozo-Zamudio, S. Schwarz, M. Sich, I. A. Akimov, M. Bayer, R. C. Schofield, E. A. Chekhovich, B. J. Robinson, N. D. Kay, O. V. Kolosov, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov and A. I. Tartakovskii, “Photoluminescence of two-dimensional GaTe and GaSe films,” 2D Materials 2, 035010 (2015).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 (a) Schematic illustrating the back-gated phototransistor based on nano-layered GaSe. (b) Optical image of the GaSe flake, (c) AFM image and the thickness of the GaSe flake determined by the topographic analysis, and (d) transfer characteristics at different drain-source voltage values.
Fig. 2
Fig. 2 Energy band diagrams of the back-gated FET based on GaSe. (a) Before contact, (b) Depletion (VG > VFB) and (c) Accumulation (VG < VFB).
Fig. 3
Fig. 3 Laser power dependence of the (a) Transfer characteristics and (b) the photocurrent versus the gate voltage of the nano-layered GaSe based back-gated field effect transistor. (c) Variation of the coefficient α in function of the gate voltage.
Fig. 4
Fig. 4 Laser power and gate voltage dependence of the (a) photoresponsivity, and (b) specific detectivity of the nano-layered GaSe based back-gated field effect transistor.

Equations (1)

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μ eff =[ dI d / dV g ]×[ L/( WC i V ds ) ]

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